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In order to investigate the mechanism of dielectric barrier glow discharge in Ar/NH3 mixture at atmospheric pressure, a multiple particles self-consistent coupled fluid model is proposed. And the finite-element method is used in the numerical calculation model, so the periodically varying waveforms of gas voltage, dielectric surface charge density and discharge current density are investigated. The spatial and temporal distributions of charged and neutral particles density and space electrical field strength are also obtained. The simulation results show that the periodic breakdown process of the gas gap is controlled by the gas voltage, and affected by dielectric surface charges. The spatiotemporal distributions of charged particle density and electrical field strength show that the discharge under conditions considered in this model is a typical atmospheric pressure glow discharge, and that in the discharge process there exist an obvious cathode fall region, a negative glow region, a Faraday dark space, and a positive column region. In the Ar/NH3 plasma, the dominant positive ions are NH3+, and the next ions are Ar2+; the dominant negative ions are NH2-; the main radical molecule products of ammonia decomposition are NH, NH2, and N2H3, but the main final stable products are N2 and H2.
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Keywords:
- dielectric barrier discharge /
- atmospheric pressure glow discharge /
- low temperature plasma /
- fluid model
[1] Luo H Y, Wang X X, Mao T, Liang Z, Lv B, Guan Z C, Wang L M 2008 Acta Phys. Sin. 57 4298 (in Chinese) [罗海云, 王新新, 毛婷, 梁卓, 吕博, 关志成, 王黎明 2008 物理学报 57 4298]
[2] Li C R, Wang X X 2002 High Voltage Engineering 28 41 (in Chinese) [李成榕, 王新新 2002 高电压技术 28 41]
[3] Kanazawa S, Kogoma M, Moriwaki T, Okazaki S 1988J. Phys. D 21 838
[4] Massines F, Rabehi A, Decomps P, Gadri R B, Ségur P, Mayoux C 1998 J. Appl. Phys. 83 2950
[5] Golubovskii Y B, Maiorov V A, Behnke J, Behnke J F 2002 J. Phys. D 35 751
[6] Golubovskii Y B, Maiorov V A, Behnke J, Behnke, J F 2003 J. Phys. D 36 39
[7] Zhang P, Kortshagen U 2006 J. Phys. D 39 153
[8] Choi Y H, Kim J H , Hwang Y S 2006 Thin. Solid. Films. 506/507 389
[9] Maiorov V A, Golubovskii Y B 2007 Plasma Sources Sci. Technol 16 S67
[10] Wang Y H, Wang D Z 2003 Acta Phys. Sin. 52 1694 (in Chinese) [王艳辉, 王德真 2003 物理学报 52 1694]
[11] Wang Y H, Wang D Z 2005 Acta Phys. Sin. 54 1295 (in Chinese) [王艳辉, 王德真 2005 物理学报 54 1295]
[12] Lv B, Wang X X, Luo H Y, Liang Z 2008 Advanced Technology of Electrical Engineering and Energy 27 63 (in Chinese) [吕博, 王新新, 罗海云, 梁卓 2008 电工电能新技术 27 63]
[13] Massines F, Gherardi N, Naudé N, Ségur P 2009 Eur. Phys. J. Appl. Phys. 47 1
[14] Brandenburg R, Navrátil Z, Jánský J, St'ahel P, Trunec D, Wagner H E 2009 J. Phys. D 42 085208
[15] Massines F, Gherardi N, Naudé N, Ségur P 2005 Plasma Phys. Control. Fusion 47 B577
[16] Okazaki S, Kogoma M, Uehara M, Kimura Y 1993 J. Phys. D 26 889
[17] Lieberman M A, Lichtenberg A J 1994 Principles of Plasma Discharges and Materials Processing (1st Edn.) (New Jersey: Wiley-Interscience) p121
[18] Fateev A, Leipold F, Kusano Y, Stenum B, Tsakadze E, Bindslev H 2005 Plasma Process. Polym. 2 193
[19] Li Z, Zhao Z, Li X H 2012 Phys. Plasmas 19 033510
[20] Balcon N, Hagelaar G J M, Boeuf J P 2008 IEEE Trans. Plasma Sci. 36 2782
[21] Zhang Z H, Shao X J, Zhang G J, Li Y X, Peng Z Y 2012 Acta Phys. Sin. 61 045205 (in Chinese) [张增辉, 邵先军, 张冠军, 李娅西, 彭兆裕 2012 物理学报 61 045205]
[22] Hagelaar G J M, Pitchford L C 2005 Plasma Source Sci. Tech. 14 722
[23] De B K, Bogaerts A, Gijbels R, Goedheer W 2004 Phys. Rev. E 69 056409
[24] Nienhuis G J, Goedheer W J, Hamers E A G 1997 J. Appl. Phys. 82 2060
[25] Moravej M, Yang X, Barankin M, Penelon J, Babayan S E, Hicks R F 2006 Plasma Source Sci. Tech. 15 204
[26] Min B K, Lee S H, Park H G 2000 J. Vac. Sci. Technol. A 18 349
[27] Dyatko N A, Ionikh Y Z, Kochetov I V, Marinov D L, Meshchanov A V, Napartovich A P, Petrov F B, Starostin S A 2008 J. Phys. D 41 055204
[28] Arakoni R A, Bhoj A N, Kushner M J 2007 J. Phys. D 40 2476
[29] Sharp T, Dowell J 1969 J. Chem. Phys. 50 3024
[30] Cook D C, Haydon S C 1984 IEE Proc. Sci. Meas. Tech. 131 145
[31] Cook D C, Haydon S C 1984 IEE Proc. Sci. Meas. Tech. 131 153
[32] Morrow R, Sato N 1999 J. Phys. D 32 L20
[33] Codina R 1998 Comput. Metholds Appl. Mech. Eng. 156 185
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[1] Luo H Y, Wang X X, Mao T, Liang Z, Lv B, Guan Z C, Wang L M 2008 Acta Phys. Sin. 57 4298 (in Chinese) [罗海云, 王新新, 毛婷, 梁卓, 吕博, 关志成, 王黎明 2008 物理学报 57 4298]
[2] Li C R, Wang X X 2002 High Voltage Engineering 28 41 (in Chinese) [李成榕, 王新新 2002 高电压技术 28 41]
[3] Kanazawa S, Kogoma M, Moriwaki T, Okazaki S 1988J. Phys. D 21 838
[4] Massines F, Rabehi A, Decomps P, Gadri R B, Ségur P, Mayoux C 1998 J. Appl. Phys. 83 2950
[5] Golubovskii Y B, Maiorov V A, Behnke J, Behnke J F 2002 J. Phys. D 35 751
[6] Golubovskii Y B, Maiorov V A, Behnke J, Behnke, J F 2003 J. Phys. D 36 39
[7] Zhang P, Kortshagen U 2006 J. Phys. D 39 153
[8] Choi Y H, Kim J H , Hwang Y S 2006 Thin. Solid. Films. 506/507 389
[9] Maiorov V A, Golubovskii Y B 2007 Plasma Sources Sci. Technol 16 S67
[10] Wang Y H, Wang D Z 2003 Acta Phys. Sin. 52 1694 (in Chinese) [王艳辉, 王德真 2003 物理学报 52 1694]
[11] Wang Y H, Wang D Z 2005 Acta Phys. Sin. 54 1295 (in Chinese) [王艳辉, 王德真 2005 物理学报 54 1295]
[12] Lv B, Wang X X, Luo H Y, Liang Z 2008 Advanced Technology of Electrical Engineering and Energy 27 63 (in Chinese) [吕博, 王新新, 罗海云, 梁卓 2008 电工电能新技术 27 63]
[13] Massines F, Gherardi N, Naudé N, Ségur P 2009 Eur. Phys. J. Appl. Phys. 47 1
[14] Brandenburg R, Navrátil Z, Jánský J, St'ahel P, Trunec D, Wagner H E 2009 J. Phys. D 42 085208
[15] Massines F, Gherardi N, Naudé N, Ségur P 2005 Plasma Phys. Control. Fusion 47 B577
[16] Okazaki S, Kogoma M, Uehara M, Kimura Y 1993 J. Phys. D 26 889
[17] Lieberman M A, Lichtenberg A J 1994 Principles of Plasma Discharges and Materials Processing (1st Edn.) (New Jersey: Wiley-Interscience) p121
[18] Fateev A, Leipold F, Kusano Y, Stenum B, Tsakadze E, Bindslev H 2005 Plasma Process. Polym. 2 193
[19] Li Z, Zhao Z, Li X H 2012 Phys. Plasmas 19 033510
[20] Balcon N, Hagelaar G J M, Boeuf J P 2008 IEEE Trans. Plasma Sci. 36 2782
[21] Zhang Z H, Shao X J, Zhang G J, Li Y X, Peng Z Y 2012 Acta Phys. Sin. 61 045205 (in Chinese) [张增辉, 邵先军, 张冠军, 李娅西, 彭兆裕 2012 物理学报 61 045205]
[22] Hagelaar G J M, Pitchford L C 2005 Plasma Source Sci. Tech. 14 722
[23] De B K, Bogaerts A, Gijbels R, Goedheer W 2004 Phys. Rev. E 69 056409
[24] Nienhuis G J, Goedheer W J, Hamers E A G 1997 J. Appl. Phys. 82 2060
[25] Moravej M, Yang X, Barankin M, Penelon J, Babayan S E, Hicks R F 2006 Plasma Source Sci. Tech. 15 204
[26] Min B K, Lee S H, Park H G 2000 J. Vac. Sci. Technol. A 18 349
[27] Dyatko N A, Ionikh Y Z, Kochetov I V, Marinov D L, Meshchanov A V, Napartovich A P, Petrov F B, Starostin S A 2008 J. Phys. D 41 055204
[28] Arakoni R A, Bhoj A N, Kushner M J 2007 J. Phys. D 40 2476
[29] Sharp T, Dowell J 1969 J. Chem. Phys. 50 3024
[30] Cook D C, Haydon S C 1984 IEE Proc. Sci. Meas. Tech. 131 145
[31] Cook D C, Haydon S C 1984 IEE Proc. Sci. Meas. Tech. 131 153
[32] Morrow R, Sato N 1999 J. Phys. D 32 L20
[33] Codina R 1998 Comput. Metholds Appl. Mech. Eng. 156 185
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