Recent progress in preparation of material and device of two-dimensional MoS2

Lai Zhan-Ping

doi:10.7498/aps.62.056801

Abstract

After several decade developments the critical dimension of an integrated circuit will reach its limit value in the next 10-15 years, and the substitute materials been to be researched. Graphene has beed considered the most likely candidate, however, pristine graphene does not have a bandgap, a property that is essential for many application, including transistors. The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much attention due to its excellent semiconductor property and potential applications in nanoelectronics. The device preparation, two-dimensional material research and property analysis of MoS2 are summarized and the trend for future research on large sigle-layer MoS2 crystal is presented.

Keywords:

Authors and contacts

Lai Zhan-Ping

1.
Institute of China Electronics Technology Group Corporation, Tianjin 300220, China

References

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Cited By

[1]	Zhu Z M, Qian L B, Yang Y T 2009 Acta Phys. Sin. 58 2631 (in Chinese) [朱障明, 钱利波, 杨银堂 2009 物理学报 58 2631]
[2]	Zhu M Y, Liu C, Bo W Q,Shu J W, Hu Y M, Jin H M, Wang S W, Li W Y 2012 Acta Phys. Sin. 61 078106 (in Chinese) [朱明原, 刘聪, 薄伟强, 舒佳武, 胡业旻, 金红明, 王世伟, 李卫英 2012 物理学报 61 078106]
[3]	Ni P G 2010 Acta Phys. Sin. 59 340 (in Chinese) [倪培根 2010 物理学报 59 340]
[4]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[5]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V,Firsov A A 2005 Nature 438 197
[6]	Zhang Y, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201
[7]	Du X, Skachko I, Duerr F, Luican A, Andrei E Y 2009 Nature 462 192
[8]	Yao Y, Ye F, Qi X L, Zhang S C, Fang Z 2007 Phys. Rev. B 75 041401(R)
[9]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[10]	Castro E V, Novoselov K S, Morozov S V, Peres N M R, Santos J M B L, Nilsson J, Guinea F, Geim A K, Neto A H C 2007 Phys. Rev. Lett. 99 6802
[11]	Li X, Wang X, Zhang L, Lee S, Dai H 2008 Science 319 1229
[12]	Gorjizadeh N, Farajian A A, Esfarjani K, Kawazoe Y 2008 Phys. Rev. B 78 155427
[13]	Berger C, Song Z M, Li T B, Li X B, Ogbazghi A Y, Feng R, Dai Z T, Marchenkov A N, Conrad E H, First P N, Heer W A 2004 J. Phys. Chem. B 108 19912
[14]	Zhou S Y, Gweon G H, Fedorov A V, First P N, Heer W A, Lee D H, Guinea F, Neto A H, CLanzara A 2007 J. Nat. Mat. 6 770
[15]	Lemme M, CEchtermeyer T, JBaus MKurz H 2007 IEEE Electron Device Letters 28 282
[16]	Chen Z H, Lin Y M, Rooks M J, Avouris P 2007 Physica E:Low-Dimensional Systems & Nanostructures 40 228
[17]	Anatoly G, Olga K, Nina L, Vladislav N 2010 MEMSTECH'2010, Polyana-Svalyava (Zakarpattya) UKRAINEApril 20-232010 p111
[18]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[19]	Ayari A, Cobas E, Ogundadegbe O, Fuhrer M S 2007 J. Appl. Phys. 101 014507
[20]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnology 6 147
[21]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[22]	Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y, Lu G, Zhang Q, Chen X, Zhang H 2012 ACS Nano 6 74
[23]	Zhang Y, Ye J, Matsuhashi Y, Iwasa Y 2012 Nano Lett. 12 1136
[24]	Liu H, Ye P D 2012 IEEE Electron Device Letters 33 546
[25]	Late D J, Liu B, Matte H S S R, Dravid V P, Rao C N R 2012 ACS Nano 6 5635
[26]	Qiu H, Pan L, Yao Z, Li J, Shi Y 2012 Phys. Rev. Lett. 100 123104
[27]	Yoon Y, Ganapathi K, Salahuddin S 2011 Nano Lett. 11 3768
[28]	Kaasbjerg K, Thygesen K S, Jacobsen K W 2012 Phys. Rev. B 85 115317
[29]	Scalise E, Houssa M, Pourtois G, Afanas'ev V, Stesmans A 2012 Nano Res. 5 43
[30]	Kadantsev E S, Hawrylak P 2012 Solid State Comm. 152 909
[31]	Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 PNAS 102 10451
[32]	Benameur M M, Radisavljevic B, Sahoo S, Berger H, Kis A 2011 Nanotechnology 22 125706
[33]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M 2011 Nano Lett. 11 5111
[34]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C, Galli G, Wang F 2010 Nano Lett. 10 1271
[35]	Li H, Zhang Q, Yap C C R, Tay B K, Edwin T H T, Olivier A, Baillargeat D 2012 Adv. Funct. Mater. 22 1385
[36]	Lee C, Yan H, Brus L E, Heinz T F, Hone J, Ryu S 2010 ACS Nano 4 2695
[37]	Chakraborty B, Bera A, Muthu D V S, Bhowmick S, Waghmare U V, Sood A K 2012 Phys. Rev. B 85 161403(R)
[38]	Brivio J, Alexander D T L, Kis A 2011 Nano Lett. 11 5148
[39]	Bertolazzi S, Brivio J, Kis A 2011 ACS Nano 5 9703
[40]	Castellanos-Gomez A, Poot M, Steele G A, Zant H S J, Agrít N, Rubio-Bollinger G 2012 Nanoscale Research Lett. 7 233
[41]	Li T 2012 Phys.Rev. B 85 235407
[42]	Castellanos-Gomez A, Barkelid M, Goossens A M, Calado V E, Zant H S J, Steele G A 2012 Nano Lett. 12 3187
[43]	Coleman J N, Lotya M, O'Neill A, Bergin S D, King P J, Khan U, Young K, Gaucher A, De S, Smith R J, Shvets I V, Arora S K, Stanton G, Kim H, Lee K, Kim G T, Duesberg G S,Hallam T, Boland J J, Wang J J, Donegan J F, Grunlan J C, Moriarty G, Shmeliov A, Nicholls R J, Perkins J M, Grieveson E M, Theuwissen K, McComb D W, Nellist P D, Nicolosi V 2011 Science 331 568
[44]	Zeng Z Y, Yin Z Y, Huang X, Li H, He Q, Lu G, Boey F, Zhang H 2011 Angew. Chem. Int. Ed. 50 11093
[45]	Liu K K, Zhang W J, Lee Y H, Lin Y C, Chang M T, Su C Y, Chang C S, Li H, Shi Y M, Zhang H, Lai C S, Li L J 2012 Nano Lett. 12 1538
[46]	Zhan Y J, Liu Z, Najmaei S, Ajayan P M, Lou J 2012 Small 7 966
[47]	Kim D, Sun D Z, Lu W H, Cheng Z H, Zhu Y M, Le D, Rahman T S, Bartels L 2011 Langmuir 27 1165
[48]	Lee Y H, Zhang X Q, Zhang W J, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T W, Chang C S, Li L J, Lin T W 2012 Adv. Mater. 24 2320

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Vol. 62, Issue 5 - 2013-03-05

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