Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Progress of flexible organic non-volatile memory field-effect transistors

Chai Yu-Hua Guo Yu-Xiu Bian Wei Li Wen Yang Tao Yi Ming-Dong Fan Qu-Li Xie Ling-Hai Huang Wei

Citation:

Progress of flexible organic non-volatile memory field-effect transistors

Chai Yu-Hua, Guo Yu-Xiu, Bian Wei, Li Wen, Yang Tao, Yi Ming-Dong, Fan Qu-Li, Xie Ling-Hai, Huang Wei
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • Flexible organic non-volatile memory field-effect transistors (ONVMFETs) are promising candidates in the field of flexible organic electronic devices, which can be used in flexible radio frequency tags, memories, integrated circuits and large-area displays, because of their remarkable advantages such as flexibility, lightweight, low cost and large-area organic electronics. On the basis of the introduction of the development of flexible ONVMFETs in terms of substrates, structures and characteristics, the classification of flexible ONVMFETs is summarized. Meanwhile, we discuss the effects of mechanical stress and temperature on the performance of flexible ONVMFET. Finally, some prospects as well as the challenges are pointed out.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 60876010, 61136003, 51173081, 21274064), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012431), the Natural Science Foundation of Heilongjiang Province, China (Grant No. ZD201303), the Heilongjiang Planned Projects for Postdoctoral Research Funds, China (Grant No. BH-Z07233), the Natural Science Foundation of Jiangsu Province, China (Grant No. ZD201303), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Staring Foundation of Nanjing University of Posts and Telecommunications, China (Grants No. NY211022).
    [1]

    Dong J, Chai Y H, Zhao Y Z, Shi W W, Guo Y X, Yi M D, Xie L H, Huang W 2013 Acta Phys. Sin. 62 047301 (in Chinese) [董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维 2013 物理学报 62 047301]

    [2]

    Martins R, Ferreira I, Barquinha P, Correia N, Gonçalves G, Ferreira I, Dias C, Fortunato E 2011 Proc. of SPIE 7603 760314

    [3]

    He X D, Liao X M, Jiang S B, Song Z X 2011 Chem. Inter. 3 36 (in Chinese) [何晓东, 廖学明, 姜胜斌, 宋志祥 2011 化工中间体 3 36]

    [4]

    Song H C, Lu J 2003 Synth. Tech. Appl. 18 17(in Chinese) [宋厚春, 陆军 2003 合成技术及应用 18 17]

    [5]

    Liu N Q, Gu W, Qiao Q, Tian Y G 2004 J. Univ. Tech. (Nat. Sci. Ed.) 25 7 (in Chinese) [刘乃青, 顾巍, 乔迁, 田一光 2004 长春工业大学学报(自然科学版) 25 7]

    [6]

    Cui Y L, Zhang Z H, Jiang L, Ou X M 2005 Plastics Sci. Technol. 3 50 (in Chinese) [崔永丽, 张仲华, 江利, 欧雪梅 2005 塑料科技 3 50]

    [7]

    Guo Y L, Yu Gui, Liu Y Q 2010 Adv. Mater. 22 4427

    [8]

    Huang W, Mi B X, Gao Z Q 2011 Organic Electronics (Beijing: Science Press) p175 (in Chinese) [黄维, 密保秀, 高志强 2011 有机电子学(北京: 科学出版社) 第175页]

    [9]

    Zaumseil J, Sirringhaus H 2007 Chem. Rev. 107 1296

    [10]

    Richards T J, Sirringhaus H 2007 J. Appl. Phys. 102 094510

    [11]

    Chang C C, Pei Z, Chan Y J 2008 Appl. Phys. Lett. 93 143302

    [12]

    Lee K H, Lee G, Lee K, Oh M S, Im S, Yoon S M 2009 Adv. Mater. 21 4287

    [13]

    Zhou Y, Han S T, Xu Z X, Roy V A L 2012 Nanotechnology 23 344014

    [14]

    Baeg K J, Khim D, Kim J, Yang B D, Kang M, Jung S W, You I K, Kim D Y, Noh Y Y 2012 Adv. Funct. Mater. 22 2915

    [15]

    Gupta R K, Ying G, Srinivasan M P, Lee P S 2012 J. Phys. Chem. B 116 9784

    [16]

    Ortiz R P, Facchetti A, Marks T J 2010 Chem. Rev. 110 205

    [17]

    Roberts M E, Queralto N, Mannsfeld S C B, Reinecke B N, Knoll W, Bao Z N 2009 Chem. Mater. 21 2292

    [18]

    Wang W, Ma D G 2010 Chin. Phys. Lett. 27 018503

    [19]

    Leong W L, Lee P S, Mhaisalkar S G, Chen T P, Dodabalapur A 2007 Appl. Phys. Lett. 90 042906

    [20]

    Chang M F, Lee P T, McAlister S P, Chin A L 2008 Appl. Phys. Lett. 93 233302

    [21]

    Han K S, Park Y, Han G, Lee B H, Lee K H, Son D H, Im S, Sung M M 2012 J. Mater. Chem. 22 19007

    [22]

    Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516

    [23]

    Kaltenbrunner M, Stadler P, Schwödiauer R, Hassel A W, Sariciftci N S, Bauer S 2011 Adv. Mater. 23 4892

    [24]

    Gupta R K, Kusuma D Y, Lee P, Srinivasan M P 2011 Acs. Appl. Mater. Inter. 3 4619

    [25]

    Baeg K J, Noh Y Y, Sirringhaus H, Kim D Y 2010 Adv. Funct. Mater. 20 224

    [26]

    Kim S J, Lee J S 2010 Nano Lett. 10 2884

    [27]

    Khan H U, Roberts M E, Knoll W, Bao Z N 2011 Chem. Mater. 23 1946

    [28]

    Kim S J, Song J M, Lee J S 2011 J. Mater. Chem. 21 14516

    [29]

    Yu X G, Yu J S, Huang W, Zeng H J 2012 Chin. Phys. B 21 117307

    [30]

    Zhang H, Mi B X, Li X, Gao Z Q, Zhao L, Huang W 2013 Chin. Phys. Lett. 30 028501

    [31]

    Tian H J, Cheng X M, Zhao G, Liang X Y, Du B Q, Wu F 2012 Chin. Phys. Lett. 29 098503

    [32]

    Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2012 Chin. Phys. B 20 017306

    [33]

    Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y 2011 Chin. Phys. Lett. 28 127203

    [34]

    Zhou Y, Han S T, Xu Z X, Roy V A L 2013 Nanoscale 5 1972

    [35]

    Han S T, Zhou Y, Xu Z X, Huang L B, Yang X B, Roy V A L 2012 Adv. Mater. 24 3556

    [36]

    Han S T, Zhou Y, Wang C D, He L F, Zhang W J, Roy V A L 2013 Adv. Mater. 25 872

    [37]

    Gao X, She X J, Liu C H, Sun Q J, Liu J, Wang S D 2013 Appl. Phys. Lett. 102 023303

    [38]

    She X J, Liu C H, Zhang J Y, Gao X, Wang S D 2013 Appl. Phys. Lett. 102 053303

    [39]

    She X J, Liu C H, Sun Q J, Liu J, Gao X, Wang S D 2012 Org. Electron. 13 1908

    [40]

    Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 43303

    [41]

    Luo W G 1999 Physics 28 216 (in Chinese) [罗维根 1999 物理 28 216

    [42]

    Naber R C G, Tanase C, Blom P W M, Gelinck G H, Marsman A W, Touwslager F J, Setayesh S, Leeuw D M D 2005 Nat. Mater. 4 243

    [43]

    Naber R C G, Asadi K, Blom P W M, Leeuw D M D, Boer B D 2010 Adv. Mater. 22 933

    [44]

    Unni K N N, Bettignies R D, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823

    [45]

    Lee G G, Tokumitsu E, Yoon S M, Fujisaki Y, Yoon J W, Ishiwara H 2011 Appl. Phys. Lett. 99 012901

    [46]

    Khan M A, Bhansali U S, Alshareef H N 2012 Adv. Mater. 24 2165

    [47]

    Hwang S K, Bae I, Kim R H, Park C 2012 Adv. Mater. 24 5910

    [48]

    Gerhard-Multhaupt R, Gross B, Sessler G M 1987 Top. Appl. Phys. 33 383

    [49]

    Singh T B, Marjanovic N, Matt G J, Sariciftci N S, Schwodiauer R, Bauer S 2004 Appl. Phys. Lett. 85 5409

    [50]

    Wu W P, Zhang H L, Wang Y, Ye S H, Guo Y L, Di C A, Yu G, Zhu D B, Liu Y Q 2008 Adv. Funct. Mater. 18 2593

    [51]

    Wang W, Shi J W, Guo S X, Zhang H M, Quan B F, Ma D G 2006 Chin. Phys. Lett. 23 3108

    [52]

    Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309

    [53]

    Yi H T, Payne M M, Anthony J E, Podzorov V 2012 Nat. Commun. 2263 1

    [54]

    Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108

    [55]

    Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177

    [56]

    Meena J S, Chu M C, Wu C S, Liang J C, Chang Y C, Ravipati S, Chang F C, Ko F H 2012 Org. Electron. 13 721

    [57]

    Gleskova H, Wagner S, Suo Z 1999 Appl. Phys. Lett. 5 3011

    [58]

    Sekitani S, Iba S, Kato Y, Noguchi Y, Someya T 2005 Appl. Phys. Lett. 87 173502

    [59]

    Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015

    [60]

    Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047

    [61]

    Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308

    [62]

    Yoon U M, Yang S, Park S H K 2011 J. Electrochem. Soc. 158 H892

    [63]

    Sekitani T, Iba S, Kato Y, Someya T 2004 Appl. Phys. Lett. 85 3902

    [64]

    Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 043303

    [65]

    Pan F, Qian X R, Huang L Z, Wang H B, Yan D H 2011 Chin. Phys. Lett. 28 078504

    [66]

    Tian X Y, Xu Z, Zhao S L, Zhang F J, Yuan G C, Xu X R 2009 Chin. Phys. B 18 3568

    [67]

    Ji T, Jung S, Varadan V K 2008 Org. Electron. 9 895

    [68]

    Ye R, Baba M, Suzuki K, Ohshi Y, Mori K 2003 J. Appl. Phys. 42 4473

    [69]

    Dong G F, Liu Q D, Wang L D, Qiu Y 2005 Chin. Phys. Lett. 22 2027

  • [1]

    Dong J, Chai Y H, Zhao Y Z, Shi W W, Guo Y X, Yi M D, Xie L H, Huang W 2013 Acta Phys. Sin. 62 047301 (in Chinese) [董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维 2013 物理学报 62 047301]

    [2]

    Martins R, Ferreira I, Barquinha P, Correia N, Gonçalves G, Ferreira I, Dias C, Fortunato E 2011 Proc. of SPIE 7603 760314

    [3]

    He X D, Liao X M, Jiang S B, Song Z X 2011 Chem. Inter. 3 36 (in Chinese) [何晓东, 廖学明, 姜胜斌, 宋志祥 2011 化工中间体 3 36]

    [4]

    Song H C, Lu J 2003 Synth. Tech. Appl. 18 17(in Chinese) [宋厚春, 陆军 2003 合成技术及应用 18 17]

    [5]

    Liu N Q, Gu W, Qiao Q, Tian Y G 2004 J. Univ. Tech. (Nat. Sci. Ed.) 25 7 (in Chinese) [刘乃青, 顾巍, 乔迁, 田一光 2004 长春工业大学学报(自然科学版) 25 7]

    [6]

    Cui Y L, Zhang Z H, Jiang L, Ou X M 2005 Plastics Sci. Technol. 3 50 (in Chinese) [崔永丽, 张仲华, 江利, 欧雪梅 2005 塑料科技 3 50]

    [7]

    Guo Y L, Yu Gui, Liu Y Q 2010 Adv. Mater. 22 4427

    [8]

    Huang W, Mi B X, Gao Z Q 2011 Organic Electronics (Beijing: Science Press) p175 (in Chinese) [黄维, 密保秀, 高志强 2011 有机电子学(北京: 科学出版社) 第175页]

    [9]

    Zaumseil J, Sirringhaus H 2007 Chem. Rev. 107 1296

    [10]

    Richards T J, Sirringhaus H 2007 J. Appl. Phys. 102 094510

    [11]

    Chang C C, Pei Z, Chan Y J 2008 Appl. Phys. Lett. 93 143302

    [12]

    Lee K H, Lee G, Lee K, Oh M S, Im S, Yoon S M 2009 Adv. Mater. 21 4287

    [13]

    Zhou Y, Han S T, Xu Z X, Roy V A L 2012 Nanotechnology 23 344014

    [14]

    Baeg K J, Khim D, Kim J, Yang B D, Kang M, Jung S W, You I K, Kim D Y, Noh Y Y 2012 Adv. Funct. Mater. 22 2915

    [15]

    Gupta R K, Ying G, Srinivasan M P, Lee P S 2012 J. Phys. Chem. B 116 9784

    [16]

    Ortiz R P, Facchetti A, Marks T J 2010 Chem. Rev. 110 205

    [17]

    Roberts M E, Queralto N, Mannsfeld S C B, Reinecke B N, Knoll W, Bao Z N 2009 Chem. Mater. 21 2292

    [18]

    Wang W, Ma D G 2010 Chin. Phys. Lett. 27 018503

    [19]

    Leong W L, Lee P S, Mhaisalkar S G, Chen T P, Dodabalapur A 2007 Appl. Phys. Lett. 90 042906

    [20]

    Chang M F, Lee P T, McAlister S P, Chin A L 2008 Appl. Phys. Lett. 93 233302

    [21]

    Han K S, Park Y, Han G, Lee B H, Lee K H, Son D H, Im S, Sung M M 2012 J. Mater. Chem. 22 19007

    [22]

    Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516

    [23]

    Kaltenbrunner M, Stadler P, Schwödiauer R, Hassel A W, Sariciftci N S, Bauer S 2011 Adv. Mater. 23 4892

    [24]

    Gupta R K, Kusuma D Y, Lee P, Srinivasan M P 2011 Acs. Appl. Mater. Inter. 3 4619

    [25]

    Baeg K J, Noh Y Y, Sirringhaus H, Kim D Y 2010 Adv. Funct. Mater. 20 224

    [26]

    Kim S J, Lee J S 2010 Nano Lett. 10 2884

    [27]

    Khan H U, Roberts M E, Knoll W, Bao Z N 2011 Chem. Mater. 23 1946

    [28]

    Kim S J, Song J M, Lee J S 2011 J. Mater. Chem. 21 14516

    [29]

    Yu X G, Yu J S, Huang W, Zeng H J 2012 Chin. Phys. B 21 117307

    [30]

    Zhang H, Mi B X, Li X, Gao Z Q, Zhao L, Huang W 2013 Chin. Phys. Lett. 30 028501

    [31]

    Tian H J, Cheng X M, Zhao G, Liang X Y, Du B Q, Wu F 2012 Chin. Phys. Lett. 29 098503

    [32]

    Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2012 Chin. Phys. B 20 017306

    [33]

    Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y 2011 Chin. Phys. Lett. 28 127203

    [34]

    Zhou Y, Han S T, Xu Z X, Roy V A L 2013 Nanoscale 5 1972

    [35]

    Han S T, Zhou Y, Xu Z X, Huang L B, Yang X B, Roy V A L 2012 Adv. Mater. 24 3556

    [36]

    Han S T, Zhou Y, Wang C D, He L F, Zhang W J, Roy V A L 2013 Adv. Mater. 25 872

    [37]

    Gao X, She X J, Liu C H, Sun Q J, Liu J, Wang S D 2013 Appl. Phys. Lett. 102 023303

    [38]

    She X J, Liu C H, Zhang J Y, Gao X, Wang S D 2013 Appl. Phys. Lett. 102 053303

    [39]

    She X J, Liu C H, Sun Q J, Liu J, Gao X, Wang S D 2012 Org. Electron. 13 1908

    [40]

    Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 43303

    [41]

    Luo W G 1999 Physics 28 216 (in Chinese) [罗维根 1999 物理 28 216

    [42]

    Naber R C G, Tanase C, Blom P W M, Gelinck G H, Marsman A W, Touwslager F J, Setayesh S, Leeuw D M D 2005 Nat. Mater. 4 243

    [43]

    Naber R C G, Asadi K, Blom P W M, Leeuw D M D, Boer B D 2010 Adv. Mater. 22 933

    [44]

    Unni K N N, Bettignies R D, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823

    [45]

    Lee G G, Tokumitsu E, Yoon S M, Fujisaki Y, Yoon J W, Ishiwara H 2011 Appl. Phys. Lett. 99 012901

    [46]

    Khan M A, Bhansali U S, Alshareef H N 2012 Adv. Mater. 24 2165

    [47]

    Hwang S K, Bae I, Kim R H, Park C 2012 Adv. Mater. 24 5910

    [48]

    Gerhard-Multhaupt R, Gross B, Sessler G M 1987 Top. Appl. Phys. 33 383

    [49]

    Singh T B, Marjanovic N, Matt G J, Sariciftci N S, Schwodiauer R, Bauer S 2004 Appl. Phys. Lett. 85 5409

    [50]

    Wu W P, Zhang H L, Wang Y, Ye S H, Guo Y L, Di C A, Yu G, Zhu D B, Liu Y Q 2008 Adv. Funct. Mater. 18 2593

    [51]

    Wang W, Shi J W, Guo S X, Zhang H M, Quan B F, Ma D G 2006 Chin. Phys. Lett. 23 3108

    [52]

    Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309

    [53]

    Yi H T, Payne M M, Anthony J E, Podzorov V 2012 Nat. Commun. 2263 1

    [54]

    Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108

    [55]

    Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177

    [56]

    Meena J S, Chu M C, Wu C S, Liang J C, Chang Y C, Ravipati S, Chang F C, Ko F H 2012 Org. Electron. 13 721

    [57]

    Gleskova H, Wagner S, Suo Z 1999 Appl. Phys. Lett. 5 3011

    [58]

    Sekitani S, Iba S, Kato Y, Noguchi Y, Someya T 2005 Appl. Phys. Lett. 87 173502

    [59]

    Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015

    [60]

    Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047

    [61]

    Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308

    [62]

    Yoon U M, Yang S, Park S H K 2011 J. Electrochem. Soc. 158 H892

    [63]

    Sekitani T, Iba S, Kato Y, Someya T 2004 Appl. Phys. Lett. 85 3902

    [64]

    Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 043303

    [65]

    Pan F, Qian X R, Huang L Z, Wang H B, Yan D H 2011 Chin. Phys. Lett. 28 078504

    [66]

    Tian X Y, Xu Z, Zhao S L, Zhang F J, Yuan G C, Xu X R 2009 Chin. Phys. B 18 3568

    [67]

    Ji T, Jung S, Varadan V K 2008 Org. Electron. 9 895

    [68]

    Ye R, Baba M, Suzuki K, Ohshi Y, Mori K 2003 J. Appl. Phys. 42 4473

    [69]

    Dong G F, Liu Q D, Wang L D, Qiu Y 2005 Chin. Phys. Lett. 22 2027

  • [1] Li Yu-Fan, Xue Wen-Qing, Li Yu-Chao, Zhan Yan-Hu, Xie Qian, Li Yan-Kai, Zha Jun-Wei. Research progress of flexible energy storage dielectric materials with sandwiched structure. Acta Physica Sinica, 2024, 73(2): 027702. doi: 10.7498/aps.73.20230614
    [2] Wang Hui, Zheng De-Xu, Jiang Xiao, Cao Yue-Xian, Du Min-Yong, Wang Kai, Liu Sheng-Zhong, Zhang Chun-Fu. Fabrication of high-performance flexible perovskite solar cells based on synergistic passivation strategy. Acta Physica Sinica, 2024, 73(7): 078401. doi: 10.7498/aps.73.20231846
    [3] Jiang Zi-Han, Ke Shuo, Zhu Ying, Zhu Yi-Xin, Zhu Li, Wan Chang-Jin, Wan Qing. Flexible neuromorphic transistors and their biomimetric sensing application. Acta Physica Sinica, 2022, 71(14): 147301. doi: 10.7498/aps.71.20220308
    [4] Chen Le-Di, Fan Ren-Hao, Liu Yu, Tang Gong-Hui, Ma Zhong-Li, Peng Ru-Wen, Wang Mu. Broadband modulation of terahertz wave polarization states with flexible metamaterial. Acta Physica Sinica, 2022, 71(18): 187802. doi: 10.7498/aps.71.20220801
    [5] Xuan Xin-Miao, Wang Jia-Heng, Mao Yan-Qi, Ye Li-Juan, Zhang Hong, Li Hong-Lin, Xiong Yuan-Qiang, Fan Si-Qiang, Kong Chun-Yang, Li Wan-Jun. Flexible transparent solar blind ultraviolet photodetector based on amorphous Ga2O3 grown on mica substrate. Acta Physica Sinica, 2021, 70(23): 238502. doi: 10.7498/aps.70.20211039
    [6] Shen Mao-Liang, Zhang Yan. Flexible sensor and energy storage device based on piezoelectric nanogenerator. Acta Physica Sinica, 2020, 69(17): 170701. doi: 10.7498/aps.69.20200784
    [7] Tan Pu-Chuan, Zhao Chao-Chao, Fan Yu-Bo, Li Zhou. Research progress of self-powered flexible biomedical sensors. Acta Physica Sinica, 2020, 69(17): 178704. doi: 10.7498/aps.69.20201012
    [8] Lan Shun, Pan Hao, Lin Yuan-Hua. Fabrication and applications of flexible inorganic ferroelectric thin films. Acta Physica Sinica, 2020, 69(21): 217708. doi: 10.7498/aps.69.20201365
    [9] Gu Mei-Yuan, Liu Jing-Biao, Wang Guang-Yi, Liang Yan, Li Fu-Peng. Memcapacitor-based multivibrator and its experiments. Acta Physica Sinica, 2019, 68(22): 228401. doi: 10.7498/aps.68.20190849
    [10] Han Xiu-Feng, Wan Cai-Hua. Recent progress of nonvolatile, multifunctional and programmable spin logic. Acta Physica Sinica, 2018, 67(12): 127201. doi: 10.7498/aps.67.20180906
    [11] Xiong Kai-Xin, Xi Kun, Bao Lei, Zhang Zhong-Liang, Tan Zhi-Jie. Molecular dynamics simulations on DNA flexibility: a comparative study of Amber bsc1 and bsc0 force fields. Acta Physica Sinica, 2018, 67(10): 108701. doi: 10.7498/aps.67.20180326
    [12] Li Wei-Sheng, Zhou Jian, Wang Han-Chen, Wang Shu-Xian, Yu Zhi-Hao, Li Song-Lin, Shi Yi, Wang Xin-Ran. Logical integration device for two-dimensional semiconductor transition metal sulfide. Acta Physica Sinica, 2017, 66(21): 218503. doi: 10.7498/aps.66.218503
    [13] Liu Hai-Wen, Zhu Shuang-Shuang, Wen Pin, Qin Feng, Ren Bao-Ping, Xiao Xiang, Hou Xin-Yu. A flexible dual-band metamaterial based on hairpin split-ring resonators. Acta Physica Sinica, 2015, 64(3): 038101. doi: 10.7498/aps.64.038101
    [14] Li Xi-Feng, Xin En-Long, Shi Ji-Feng, Chen Long-Long, Li Chun-Ya, Zhang Jian-Hua. Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination. Acta Physica Sinica, 2013, 62(10): 108503. doi: 10.7498/aps.62.108503
    [15] Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei. The progress of flexible organic field-effect transistors. Acta Physica Sinica, 2013, 62(4): 047301. doi: 10.7498/aps.62.047301
    [16] Chen Xiao-Xue, Yao Ruo-He. DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104. doi: 10.7498/aps.61.237104
    [17] Qiang Lei, Yao Ruo-He. Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica, 2012, 61(8): 087303. doi: 10.7498/aps.61.087303
    [18] Shen Yan, Zhang Guo-Qing, Yu Wen-Bin, Guo Zhi-Zhong, Zhao Ye-Quan. Theoretical studies on nonvolatile holographic recording for LiNbO3:Cu:Ce crystals. Acta Physica Sinica, 2012, 61(18): 184205. doi: 10.7498/aps.61.184205
    [19] Li Wei-Hua, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin. Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2009, 58(10): 7183-7188. doi: 10.7498/aps.58.7183
    [20] Fu Bo, Zhang Guo-Quan, Liu Xiang-Ming, Shen Yan, Xu Qing-Jun, Kong Yong-Fa, Chen Shao-Lin, Xu Jing-Jun. Influence of dopants on nonvolatile holographic storage in lithium niobate. Acta Physica Sinica, 2008, 57(5): 2946-2951. doi: 10.7498/aps.57.2946
Metrics
  • Abstract views:  7325
  • PDF Downloads:  866
  • Cited By: 0
Publishing process
  • Received Date:  23 September 2013
  • Accepted Date:  18 October 2013
  • Published Online:  05 January 2014

/

返回文章
返回