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This paper presents a low-cost low-power humidity sensor for applications of ultra-high frequency radio frequency identification sensing tag. The humidity sensor element, based on standard SMIC 0.35 μm complementary metal-oxide-semiconductor technology, utilizes polyimide as sensing material and fabricates the interdigitated electrodes in top metal layer without any further post-processing. The humidity sensor interface, based on phase-locked loop theory, employs fully-digital architecture and achieves direct capacitance-to-digital conversion, which allows the supply voltage to be close to threshold voltage. The measurements at 25 ℃ show that the proposed humidity sensor achieves a sensitivity of 36.5 fF%RH, maximum hysteresis error of 7%, response time of 20 ms, and 2.1 μW power dissipation at 0.6 V supply voltage.
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Keywords:
- humidity sensor /
- capacitive sensor interface /
- phase-locked loop /
- radio frequency identification
[1] Li B, He Y G, Hou Z G, She K, Zuo L 2011 Acta Phys. Sin. 60 084202(in Chinese)[李兵, 何怡刚, 侯周国, 佘开, 佐磊 2011 物理学报 60 084202]
[2] Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2013 Acta Phys. Sin. 62 044102(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2013 物理学报 62 044102]
[3] Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2012 Acta Phys. Sin. 61 244103(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2012 物理学报 61 244103]
[4] Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2013 Acta Phys. Sin. 62 144101(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2013 物理学报 62 144101]
[5] Hou Z G, He Y G, Li B, She K, Zhu Y Q 2010 Acta Phys. Sin. 59 5606(in Chinese)[侯周国, 何怡刚, 李兵, 佘开, 朱彦卿 2010 物理学报 59 5606]
[6] Beriain A, Rebollo I, Fernandez I, Sevillano J F, Berenguer R 2012 Proceedings of 2012 International Microwave Symposium Digest Montreal June 17-22, 2012 (Canada) p1
[7] Catarinucci L, Colella R, Tarricone L 2013 IEEE Microwave and Wireless Compon. Lett. 23 49
[8] Wang B, Law M K 2014 IEEE Trans. Circ. Syst. I: Regular Papers 61 337
[9] Sahafi A, Sobhi J, Koozehkanani Z D 2013 Analog Integrated Circuits and Signal Processing 75 343
[10] Chani M T S, Karimov K S, Khalid F A, Abbas S Z, Bhatty M B 2013 Chin. Phys. B 22 010701
[11] Chen Z, Lu C 2005 Sens. Lett. 3 274
[12] Gu L, Huang Q A, Qin M 2004 Sens. Actuat. B: Chemical 99 491
[13] Zhao C L, Qin M, Huang Q A 2011 IEEE Sens. J. 11 2986
[14] Wang B, Law M K, Bermak A 2012 Proceedings of the 4th Asia Symposium on Quality Electronic Design Penang, Malaysia, July 10-11, 2012 p95
[15] Dai C L, Lu D H 2010 Proceedings of the 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems Nice, France, January 20-23, 2010 p110
[16] Nizhnik O, Higuchi K, Maenaka K 2012 Sensors 12 226
[17] Paavola M, Kamarainen M, Laulainen E, Saukoski M, Koskinen L, Kosunen M, Halonen K A 2009 IEEE J. Solid-State Circ. 44 3193
[18] Shin D Y, Lee H, Kim S 2011 IEEE Trans. Circ. Syst. Ⅱ: Express Briefs 58 90
[19] Xia S, Makinwa K, Nihtianov S 2012 Proceedings of 2012 IEEE International Solid-State Circuits Conference San Francisco, USA, Feb. 19-23, 2012 p198
[20] Tan Z C, Daamen R, Humbert A, Ponomarev Y V, Chae Y C, Pertijs M A 2013 IEEE J. Solid-State Circ. 48 2469
[21] Nguyen T T, Hafliger P 2013 Proceedings of IEEE Biomedical Circuits and Systems Conference Rotterdam, Netherlands, Oct. 31-Nov. 2, 2013 p326
[22] Sheu M L, Hsu W H, Tsao L J 2012 IEEE Trans. Instrum. Measur. 61 447
[23] Tan Z C, Shalmany S H, Meijer G C, Pertijs M A 2012 IEEE J. Solid-State Circ. 47 1703
[24] Nizza N, Dei M, Butti F, Bruschi P 2013 IEEE Trans. Circ. Syst. I: Regular Papers 60 1419
[25] Laconte J, Wilmart V, Raskin J P, Flandre D 2003 Proceedings of 2003 IEEE Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS Cannes, France, April 25-27, 2003, p223
[26] Looyenga H 1965 Physica 31 401
[27] Schubert P J, Nevin J H 1985 IEEE Trans. Electron Dev. 32 1220
[28] Wang B, Law M K, Bermak A 2012 Proceedings of the 4th Asia Symposium on Quality Electronic Design Penang, Malaysia, Aug. 3-5, 2012 p95
[29] Danneels H, Piette F, De Smedt V, Dehaene W, Gielen G 2011 Sens. Actuat. A: Physical 172 220
[30] Zhu S H, Si L M, Guo C, Shi J Y, Zhu W R 2014 Chin. Phys. B 23 078404
[31] Huang J F, Liu R Y, Lai W C, Shin C W, Hsu C M 2012 Chin. Phys. B 23 084210
[32] Kerem K, Jose Luis Merino P, Catherine D 2013 Proceedings of the 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Villach, Austria, July 3-7, 2013 p231
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[1] Li B, He Y G, Hou Z G, She K, Zuo L 2011 Acta Phys. Sin. 60 084202(in Chinese)[李兵, 何怡刚, 侯周国, 佘开, 佐磊 2011 物理学报 60 084202]
[2] Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2013 Acta Phys. Sin. 62 044102(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2013 物理学报 62 044102]
[3] Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2012 Acta Phys. Sin. 61 244103(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2012 物理学报 61 244103]
[4] Zuo L, He Y G, Li B, Zhu Y Q, Fang G F 2013 Acta Phys. Sin. 62 144101(in Chinese)[佐磊, 何怡刚, 李兵, 朱彦卿, 方葛丰 2013 物理学报 62 144101]
[5] Hou Z G, He Y G, Li B, She K, Zhu Y Q 2010 Acta Phys. Sin. 59 5606(in Chinese)[侯周国, 何怡刚, 李兵, 佘开, 朱彦卿 2010 物理学报 59 5606]
[6] Beriain A, Rebollo I, Fernandez I, Sevillano J F, Berenguer R 2012 Proceedings of 2012 International Microwave Symposium Digest Montreal June 17-22, 2012 (Canada) p1
[7] Catarinucci L, Colella R, Tarricone L 2013 IEEE Microwave and Wireless Compon. Lett. 23 49
[8] Wang B, Law M K 2014 IEEE Trans. Circ. Syst. I: Regular Papers 61 337
[9] Sahafi A, Sobhi J, Koozehkanani Z D 2013 Analog Integrated Circuits and Signal Processing 75 343
[10] Chani M T S, Karimov K S, Khalid F A, Abbas S Z, Bhatty M B 2013 Chin. Phys. B 22 010701
[11] Chen Z, Lu C 2005 Sens. Lett. 3 274
[12] Gu L, Huang Q A, Qin M 2004 Sens. Actuat. B: Chemical 99 491
[13] Zhao C L, Qin M, Huang Q A 2011 IEEE Sens. J. 11 2986
[14] Wang B, Law M K, Bermak A 2012 Proceedings of the 4th Asia Symposium on Quality Electronic Design Penang, Malaysia, July 10-11, 2012 p95
[15] Dai C L, Lu D H 2010 Proceedings of the 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems Nice, France, January 20-23, 2010 p110
[16] Nizhnik O, Higuchi K, Maenaka K 2012 Sensors 12 226
[17] Paavola M, Kamarainen M, Laulainen E, Saukoski M, Koskinen L, Kosunen M, Halonen K A 2009 IEEE J. Solid-State Circ. 44 3193
[18] Shin D Y, Lee H, Kim S 2011 IEEE Trans. Circ. Syst. Ⅱ: Express Briefs 58 90
[19] Xia S, Makinwa K, Nihtianov S 2012 Proceedings of 2012 IEEE International Solid-State Circuits Conference San Francisco, USA, Feb. 19-23, 2012 p198
[20] Tan Z C, Daamen R, Humbert A, Ponomarev Y V, Chae Y C, Pertijs M A 2013 IEEE J. Solid-State Circ. 48 2469
[21] Nguyen T T, Hafliger P 2013 Proceedings of IEEE Biomedical Circuits and Systems Conference Rotterdam, Netherlands, Oct. 31-Nov. 2, 2013 p326
[22] Sheu M L, Hsu W H, Tsao L J 2012 IEEE Trans. Instrum. Measur. 61 447
[23] Tan Z C, Shalmany S H, Meijer G C, Pertijs M A 2012 IEEE J. Solid-State Circ. 47 1703
[24] Nizza N, Dei M, Butti F, Bruschi P 2013 IEEE Trans. Circ. Syst. I: Regular Papers 60 1419
[25] Laconte J, Wilmart V, Raskin J P, Flandre D 2003 Proceedings of 2003 IEEE Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS Cannes, France, April 25-27, 2003, p223
[26] Looyenga H 1965 Physica 31 401
[27] Schubert P J, Nevin J H 1985 IEEE Trans. Electron Dev. 32 1220
[28] Wang B, Law M K, Bermak A 2012 Proceedings of the 4th Asia Symposium on Quality Electronic Design Penang, Malaysia, Aug. 3-5, 2012 p95
[29] Danneels H, Piette F, De Smedt V, Dehaene W, Gielen G 2011 Sens. Actuat. A: Physical 172 220
[30] Zhu S H, Si L M, Guo C, Shi J Y, Zhu W R 2014 Chin. Phys. B 23 078404
[31] Huang J F, Liu R Y, Lai W C, Shin C W, Hsu C M 2012 Chin. Phys. B 23 084210
[32] Kerem K, Jose Luis Merino P, Catherine D 2013 Proceedings of the 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Villach, Austria, July 3-7, 2013 p231
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