Effect of wafer bonding and laser liftoff process on residual stress of GaN-based vertical light emitting diode chips

Wang Hong; Yun Feng; Liu Shuo; Huang Ya-Ping; Wang Yue; Zhang Wei-Han; Wei Zheng-Hong; Ding Wen; Li Yu-Feng; Zhang Ye; Guo Mao-Feng

doi:10.7498/aps.64.028501

Abstract

Residual stress conditions in GaN-based LEDs will have a significant influence on device performance and reliability. In this paper, GaN-based vertical LEDs under different stress conditions are fabricated by bonding with three types of submounts (Al2O3 submount, CuW submount and Si submount), changing the soak temperature (290 ℃, 320 ℃, 350 ℃ and 380 ℃) and using different laser energy densities (875, 945 and 1015 mJ·cm-2). The warpage and Raman scattering spectra of those GaN-based LEDs are measured. The experimental results show that the residual stress conditions in GaN-based vertical LEDs are a consequence of the bonded submounts and bonded metal, and the soak temperature is the primary factor that determines the degree of residual stress in LED chips. In the laser lift-off process, changing laser energy density in an appropriate range has little influence on residual strain of LED chips, and the micro-cracks in GaN layer caused by LLO process will play a role in releasing the residual stress. The warpage of epitaxial sapphire substrate becomes large after boding with Si submount, the residual stress in GaN-based vertical LEDs is tensile stress and becomes larger with the soak temperature rising. When GaN epi wafer bonds with Al2O3 submount and CuW submount, the warpages becomes small and large respectively and the residual stress in chips is compressive stress. Because of the mismatch of coefficient of thermal expansion, the compressive stress in GaN-based LED chips increases for Al2O3 submount and drops for CuW submount with the soak temperature rising.

Keywords:

PACS:

85.60.Jb	(Light-emitting devices)
68.35.Gy	(Mechanical properties; surface strains)
79.20.Eb	(Laser ablation)

Authors and contacts

1.
Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi'an Jiaotong University, Xi'an 710049, China;
2.
Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an 710049, China;
3.
Shaanxi Supernova Lighting Technology Co. Ltd. Xi'an 710077, China
Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032608).

References

[1]	Nakamura S, Senoh M, Iwasa N 1996 Jpn. J. Appl. Phys. 35 217
[2]	Nakamura S, Senoh M, Nagahama S 1998 Jpn. J. Appl. Phys. 37 1020
[3]	Kang T S, Wang X T, Lo C F 2012 J. Vac. Sci. Technol. B 30 011203
[4]	Zhang B, Egawa T, Ishikawa H 2003 Jpn. J. Appl. Phys. 42 L226
[5]	Ng W N, Leung C H, Lai P T 2008 Nanotechnology 19 255302
[6]	Yang Y, Lin Y, Xiang P 2014 Appl. Phy. Express 7 042102
[7]	Wu K, Wei T B, Lan D 2014 Chin. Phys. B 23 028504
[8]	Chen W C, Tang H L, Luo P 2014 Acta Phys. Sin. 63 068103 (in Chinese) [陈伟超, 唐慧丽, 罗平 2014 物理学报 63 068103]
[9]	Li J Z, Tao Y B, Chen Z Z, Jiang X Z 2014 Chin. Phys. B 23 016101
[10]	Barghout K, Chaudhuri J 2004 J. Mater. Sci. 39 5817
[11]	Yuseong J, Won Rae K, Dong-Hyun J 2010 J. Appl. Phys. 107 113537
[12]	Tan B S, Yuan S, Kang X J 2004 Appl. Phys. Lett. 84 2757
[13]	Chu C F, Lai F I, Chu J T 2004 J. Appl. Phys. 95 3916
[14]	Yongjian S, Tongjun Y, Chuanyu J 2010 Chin. Phys. Lett. 27 127303
[15]	Chen M, Zhang J Y, L X Q, Ying L Y 2013 Chin. Phys. Lett. 30 014203
[16]	Tetsuzo U, Masahiro I, Masaaki Y 2011 Jpn. J. Appl. Phys. Lett. 50 041001
[17]	Hsu S C, Pong B J, Li W H 2007 Appl. Phys. Lett. 91 251114
[18]	Zhao D G, Xu S J, Xie M H 2003 Appl. Phys. Lett. 83 677
[19]	Xiong C B, Jiang F Y, Fang W Q 2008 Acta Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿 2008 物理学报 57 3176]
[20]	Kim S 2011 J. Electrochem. Soc. 158 904
[21]	Huang Y P, Yun F, Ding W 2014 Acta Phys. Sin. 63 127302 (in Chinese) [黄亚平, 云峰, 丁文 2014 物理学报 63 127302]
[22]	Zhang L, Shao Y L, Hao X 2011 J. Cryst. Growth 334 62
[23]	Lin B W, Wu N J, Wu Y C S 2013 J. Display Technol. 9 371
[24]	Jinsub P, Takenari G, Takafumi Y, Seogwoo L 2013 J. Phys. D: Appl. Phys. 46 155104

[1]	Nakamura S, Senoh M, Iwasa N 1996 Jpn. J. Appl. Phys. 35 217
[2]	Nakamura S, Senoh M, Nagahama S 1998 Jpn. J. Appl. Phys. 37 1020
[3]	Kang T S, Wang X T, Lo C F 2012 J. Vac. Sci. Technol. B 30 011203
[4]	Zhang B, Egawa T, Ishikawa H 2003 Jpn. J. Appl. Phys. 42 L226
[5]	Ng W N, Leung C H, Lai P T 2008 Nanotechnology 19 255302
[6]	Yang Y, Lin Y, Xiang P 2014 Appl. Phy. Express 7 042102
[7]	Wu K, Wei T B, Lan D 2014 Chin. Phys. B 23 028504
[8]	Chen W C, Tang H L, Luo P 2014 Acta Phys. Sin. 63 068103 (in Chinese) [陈伟超, 唐慧丽, 罗平 2014 物理学报 63 068103]
[9]	Li J Z, Tao Y B, Chen Z Z, Jiang X Z 2014 Chin. Phys. B 23 016101
[10]	Barghout K, Chaudhuri J 2004 J. Mater. Sci. 39 5817
[11]	Yuseong J, Won Rae K, Dong-Hyun J 2010 J. Appl. Phys. 107 113537
[12]	Tan B S, Yuan S, Kang X J 2004 Appl. Phys. Lett. 84 2757
[13]	Chu C F, Lai F I, Chu J T 2004 J. Appl. Phys. 95 3916
[14]	Yongjian S, Tongjun Y, Chuanyu J 2010 Chin. Phys. Lett. 27 127303
[15]	Chen M, Zhang J Y, L X Q, Ying L Y 2013 Chin. Phys. Lett. 30 014203
[16]	Tetsuzo U, Masahiro I, Masaaki Y 2011 Jpn. J. Appl. Phys. Lett. 50 041001
[17]	Hsu S C, Pong B J, Li W H 2007 Appl. Phys. Lett. 91 251114
[18]	Zhao D G, Xu S J, Xie M H 2003 Appl. Phys. Lett. 83 677
[19]	Xiong C B, Jiang F Y, Fang W Q 2008 Acta Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿 2008 物理学报 57 3176]
[20]	Kim S 2011 J. Electrochem. Soc. 158 904
[21]	Huang Y P, Yun F, Ding W 2014 Acta Phys. Sin. 63 127302 (in Chinese) [黄亚平, 云峰, 丁文 2014 物理学报 63 127302]
[22]	Zhang L, Shao Y L, Hao X 2011 J. Cryst. Growth 334 62
[23]	Lin B W, Wu N J, Wu Y C S 2013 J. Display Technol. 9 371
[24]	Jinsub P, Takenari G, Takafumi Y, Seogwoo L 2013 J. Phys. D: Appl. Phys. 46 155104

[1]	YUAN Hong, YIN Xianghui, LV Bo, JIN Yifei, Cheonho BAE, ZHANG Hongming, FU Jia, LIU Haiqing, ZHAO Hailin, ZANG Qing, WANG Fudi, XIANG Dong. Experimental analysis of plasma intrinsic torque based on NBI in EAST L-mode plasmas. Acta Physica Sinica, 2025, 74(9): . doi: 10.7498/aps.74.20241462
[2]	Huang Mei-Ting, Jiang Yin-Hua, Chen Yu-Qi, Li Run-Hua. Quantitative analysis of trace elements in bismuth brass with high repetition rate laser-ablation spark-induced breakdown spectrum. Acta Physica Sinica, 2021, 70(10): 104206. doi: 10.7498/aps.70.20202018
[3]	Dou Wei, Pu Shuang-Shuang, Niu Na, Qu Da-Peng, Meng Xiang-Jun, Zhao Ling, Zheng Quan. Combined dual-wavelength laser diode beam end-pumped single longitudinal mode Pr³⁺:LiYF₄ 360 nm ultraviolet laser. Acta Physica Sinica, 2019, 68(5): 054202. doi: 10.7498/aps.68.20182018
[4]	Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan. Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica, 2019, 68(12): 128103. doi: 10.7498/aps.68.20190258
[5]	Fu Min, Wen Shang-Sheng, Xia Yun-Yun, Xiang Chang-Ming, Ma Bing-Xu, Fang Fang. Failure analysis of GaN-based Light-emitting diode with hole vertical structure. Acta Physica Sinica, 2017, 66(4): 048501. doi: 10.7498/aps.66.048501
[6]	Lu Yong-Jun, Yang Yi, Wang Feng-Hui, Lou Kang, Zhao Xiang. Effect of continuously graded functional layer on curvature and residual stress of solid oxide fuel cell in initial reduction process. Acta Physica Sinica, 2016, 65(9): 098102. doi: 10.7498/aps.65.098102
[7]	Gong Zhi-Na, Yun Feng, Ding Wen, Zhang Ye, Guo Mao-Feng, Liu Shuo, Huang Ya-Ping, Liu Hao, Wang Shuai, Feng Lun-Gang, Wang Jiang-Teng. Increase in light extraction efficiency of vertical light emitting diodes by a photo-electro-chemical etching method. Acta Physica Sinica, 2015, 64(1): 018501. doi: 10.7498/aps.64.018501
[8]	Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801. doi: 10.7498/aps.64.187801
[9]	Jiang Wei-Wei, Fan Lin-Yong, Zhao Rui-Feng, Wei Yan, Pei Li, Jian Shui-Sheng. Comb-filter based on two core fiber coupler and its CO2 laser trimming. Acta Physica Sinica, 2011, 60(4): 044214. doi: 10.7498/aps.60.044214
[10]	Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274. doi: 10.7498/aps.59.1268
[11]	Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287. doi: 10.7498/aps.58.7282
[12]	Cen Min, Zhang Yue-Guang, Chen Wei-Lan, Gu Pei-Fu. Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films. Acta Physica Sinica, 2009, 58(10): 7025-7029. doi: 10.7498/aps.58.7025
[13]	Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng. Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665. doi: 10.7498/aps.57.3661
[14]	Sun Hao-Liang, Song Zhong-Xiao, Xu Ke-Wei. Effect of substrate constraint on stress-induced cracking of sputtered tungsten thin film. Acta Physica Sinica, 2008, 57(8): 5226-5231. doi: 10.7498/aps.57.5226
[15]	Yu Yi-Ting, Yuan Wei-Zheng, Qiao Da-Yong, Liang Qing. A novel microstructure for in-situ measurement of residual stress in micromechanical thin films. Acta Physica Sinica, 2007, 56(10): 5691-5697. doi: 10.7498/aps.56.5691
[16]	Kong De-Jun, Zhang Yong-Kang, Chen Zhi-Gang, Lu Jin-Zhong, Feng Ai-Xin, Ren Xu-Dong, Ge Tao. Experimental study of residual stress of galvanized passive film based on XRD. Acta Physica Sinica, 2007, 56(7): 4056-4061. doi: 10.7498/aps.56.4056
[17]	Zhang Yong-Kang, Kong De-Jun, Feng Ai-Xin, Lu Jin-Zhong, Ge Tao. Study on the detection of interfacial bonding strength of coatings (Ⅱ): detecting system of bonding strength. Acta Physica Sinica, 2006, 55(11): 6008-6012. doi: 10.7498/aps.55.6008
[18]	Di Yu-Xian, Ji Xin-Hua, Hu Ming, Qin Yu-Wen, Chen Jin-Long. Residual stress measurement of porous silicon thin film by substrate curvature method. Acta Physica Sinica, 2006, 55(10): 5451-5454. doi: 10.7498/aps.55.5451
[19]	Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454. doi: 10.7498/aps.54.5450
[20]	Shao Shu-Ying, Fan Zheng-Xiu, Shao Jian-Da. Influences of the period of repeating thickness on the stress of alternative high and low refractivity ZrO2/SiO2 multilayers. Acta Physica Sinica, 2005, 54(7): 3312-3316. doi: 10.7498/aps.54.3312

Catalog

Vol. 64, Issue 2 - 2015-01-20

Metrics

Abstract views: 9726
PDF Downloads: 750

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板