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The surface potential and electron yield dynamic characteristics of an insulating thick sample under high-energy electron beam irradiation are obtained by combining the numerical simulation and experimental measurement. The numerical model takes into account the electron scattering, charge trapping, and charge transport. The results show that due to the electron scattering and transport, the space charge is weakly positive in the near surface and strongly negative inside sample; along the depth direction, the space potential decreases to a minimum value slowly, and then increases gradually and finally tends to zero; with the electron beam irradiation, the surface potential decreases to the negative kV magnitude gradually, and the total electron yield gradually increases to a stable value that is slightly less than unity. After stopping irradiation, the surface potential increases gradually, but charges are not eliminated completely. The surface potential decreases linearly with the increase of the beam energy, and increases with the increase of the incident angle, however it decreases slightly with the increase of the sample thickness.
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Keywords:
- insulating sample /
- surface potential /
- electron yield /
- numerical simulation
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[16] Li W Q, Zhang H B 2010 Micron 41 416
[17] Li W Q, Mu K, Xia R H 2011 Micron 42 443
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[19] Czyźewski Z, MacCallum D O, Romig A, Joy D C 1990 J. Appl. Phys. 68 3066
[20] Shimizu R, Ding Z J 1992 Rep. Prog. Phys. 55 487
[21] Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[22] Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
[23] Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096
[24] Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[25] Desalvot A, Rosa R 1987 J. Phys. D 20 790
[26] Penn D R 1987 Phys. Rev. B 35 482
[27] Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[28] Rau E I 2008 Appl. Surf. Sci. 254 2110
[29] Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[30] Li J J, Zhang H B, Feng R J 2007 J. Phys. D 40 826
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[1] Reimer L 1993 Image Formation in Low Voltage Scanning Electron Microscopy (Bellingham: SPIE Optical Engineering Press) p71
[2] Baer D R, Lea A S, Geller J D, Hammond J S, Kover L, Powell C J, Seah M P, Suzuki M, Watts J F, Wolstenholme J 2010 J. Electron Spectrosc. Relat. Phenom. 176 80
[3] Belhaj M, Paulmier T, Hanna R, Arnaout M, Balcon N, Payan D, Puech J 2014 Nucl. Instrum. Meth. B 320 46
[4] Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682
[5] Sessler G M 1998 Electrets (New York: Springer-Verlag) p22
[6] Sarrailh P, Mateo-Velez J C, Roussel J F, Dirassen B, Forest J, Thiebault B, Rodgers D, Hilgers A 2012 IEEE Trans. Plasma Sci. 40 368
[7] Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[8] Quan R H, Han J W, Zhang Z L 2013 Acta Phys. Sin. 62 245205 (in Chinese) [全荣辉, 韩建伟, 张振龙 2013 物理学报 62 245205]
[9] Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 物理学报 58 684]
[10] Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58
[11] Cornet N, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Touzin M, Fitting H J 2008 J. Appl. Phys. 103 064110
[12] Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695
[13] Rau E I, Fakhfakh S, Andrianov M V, Evstafeva E N, Jbara O, Rondot S, Mouze Z 2008 Nucl. Instrum. Meth. B 266 719
[14] Balcon N, Payan D, Belhaj M, Tondu T, Inguimbert V 2012 IEEE Trans. Plasma Sci. 40 282
[15] Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482
[16] Li W Q, Zhang H B 2010 Micron 41 416
[17] Li W Q, Mu K, Xia R H 2011 Micron 42 443
[18] Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 物理学报 61 027302]
[19] Czyźewski Z, MacCallum D O, Romig A, Joy D C 1990 J. Appl. Phys. 68 3066
[20] Shimizu R, Ding Z J 1992 Rep. Prog. Phys. 55 487
[21] Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[22] Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
[23] Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096
[24] Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[25] Desalvot A, Rosa R 1987 J. Phys. D 20 790
[26] Penn D R 1987 Phys. Rev. B 35 482
[27] Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[28] Rau E I 2008 Appl. Surf. Sci. 254 2110
[29] Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[30] Li J J, Zhang H B, Feng R J 2007 J. Phys. D 40 826
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