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Since the topological insulator was discovered, the investigation of topological properties has become the hot spot in condensed matter physics. In this paper, we study topological properties of chalcogenide compounds Ge2X2Te5 (X=Sb, Bi) crystals and their monolayer and bilayer films as well as the vertical uniaxial pressure induced topological quantum phase transitions in monolayer and bilayer films. The results show that for A-type crystal, the bulk structures of these two compounds are topological insulators, the monolayer structures of these two compounds are conventional metals, and bilayer structures are topological metals. There is no topological quantum phase transition in monolayer nor bilayer film under the uniaxial compression. While for B-type crystal, the bulk structures of these two compounds are conventional insulators, the monolayer Ge2Sb2Te5 is conventional metal, its bilayer structure as well as monolayer and bilayer of Ge2Bi2Te5 films is conventional insulator. All the B-type monolayer and bilayer films each undergo a topological quantum phase transition to the topological metals under the uniaxial compression.
[1] Zhang H J, Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2009 Nature Phys. 5 438
[2] Feng W X, Xiao D, Ding J, Yao Y G 2011 Phys. Rev. Lett. 106 016402
[3] Weng H M, Xu G, Zhang H J, Zhang S C, Dai X, Fang Z 2011 Phys. Rev. B 84 060408
[4] Xu G, Weng H M, Wang Z J, Dai X, Fang Z 2011 Phys. Rev. Lett. 107 186806
[5] Marcinkova A, Wang J K, Slavonic C, Andriy H N, Kelly K F, Filinchuk Y, Morosan E 2013 Phys. Rev. B 88 165128
[6] Kane C L, Mele E J 2005 Phys. Rev. Lett. 95 146802
[7] Fu L, Kane C L 2007 Phys. Rev. B 76 045302
[8] Kim J, Kim J, Jhi S H 2010 Phys. Rev. B 82 201312(R)
[9] Sa B S, Zhou J, Song Z, Sun Z, Ahuja R 2011 Phys. Rev. B 84 085130
[10] Sun Z, Zhou J, Pana Y, Songc Z, Maod H K, Ahuja R 2011 Proc. Natl. Acad. Sci. U.S.A. 108 10410
[11] Lai Y F, Feng J, Qiao B W, Ling Y, Lin Y Y, Tang T A, Cai B C, Chen B M 2006 Acta Phys. Sin. 55 4347 (in Chinese) [赖云峰, 冯洁, 乔保卫, 凌云, 林殷茵, 汤庭鳌, 蔡炳初, 陈邦明 2006 物理学报 55 4347]
[12] Liao Y B, Xu L, Yang F, Liu W Q, Liu D, Xu J, Ma Z Y, Chen K J 2010 Acta Phys. Sin. 59 6563 (in Chinese) [廖远宝, 徐岭, 杨菲, 刘文强, 刘东, 徐骏, 马忠元, 陈坤基 2010 物理学报 59 6563]
[13] Pirovano A 2004 IEEE Trans. Electron Dev. 51 3
[14] Juarez L F, Da S, Aron W, Lee H 2008 Phys. Rev. B 78 224111
[15] Kaewmaraya T, Ramzan M, Löfås H, Ahuja R 2013 J. Appl. Phys. 113 033510
[16] Sa B S, Zhou J, Sun Z M, Tominaga J, Ahuja R 2012 Phys. Rev. Lett. 109 096802
[17] Park J H, Eom S H, Lee H 2009 Phys. Rev. B 80 115209
[18] Kim K H, Kyoung Y K, Yun D J, Choi S J 2013 Thin Solid Films 548 40
[19] Sa B S, Zhou J, Ahuja R, Sun Z 2014 Computat. Mater. Sci. 82 66
[20] Kresse G, Hafner J 1993 Phys. Rev. B 47 558
[21] Kresse G, Furthmuller J 1996 J. Comput. Mater. Sci. 6 15
[22] Grimme S 2006 J. Comput. Chem. 27 1787
[23] Petrov I I, Immov R M, Pinker Z G 1968 Sov. Phys. Crystallogr. 13 339
[24] Kooi B J, de Hossona J Th M 2002 J. Appl. Phys. 92 3584
[25] Sun Z M, Zhou J, Ahuja R 2006 Phys. Rev. Lett. 96 055507
[26] Lee G, Jhi S H 2008 Phys. Rev. B 77 153201
[27] Kooi B J, de Hossona J Th M 2002 J. Appl. Phys. 92 3584
[28] Matsunaga T, Kojima R, Yamada N, Kifune K, Kubota Y, Takata M 2007 Acta Cryst. B63 346
[29] Yu R, Zhang W, Weng H M, Dai X, Fang Z 2011 Physics 40 7 (in Chinese) [余睿, 张薇, 翁红明, 戴希, 方忠 2011 物理 40 7]
[30] Li W, Wei X Y, Zhu J X, Ting C S, Chen Y 2014 Phys. Rev. B 89 035101
[31] Zhu Z Y, Cheng Y, Schwingenschlögl U 2012 Phys. Rev. Lett. 108 266805
[32] Zhang Q Y, Cheng Y, Schwingenschlögl U 2013 Phys. Rev. B 88 155317
[33] Singh B, Lin H, Prasad R, Bansil A 2013 Phys. Rev. B 88 195147
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[1] Zhang H J, Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2009 Nature Phys. 5 438
[2] Feng W X, Xiao D, Ding J, Yao Y G 2011 Phys. Rev. Lett. 106 016402
[3] Weng H M, Xu G, Zhang H J, Zhang S C, Dai X, Fang Z 2011 Phys. Rev. B 84 060408
[4] Xu G, Weng H M, Wang Z J, Dai X, Fang Z 2011 Phys. Rev. Lett. 107 186806
[5] Marcinkova A, Wang J K, Slavonic C, Andriy H N, Kelly K F, Filinchuk Y, Morosan E 2013 Phys. Rev. B 88 165128
[6] Kane C L, Mele E J 2005 Phys. Rev. Lett. 95 146802
[7] Fu L, Kane C L 2007 Phys. Rev. B 76 045302
[8] Kim J, Kim J, Jhi S H 2010 Phys. Rev. B 82 201312(R)
[9] Sa B S, Zhou J, Song Z, Sun Z, Ahuja R 2011 Phys. Rev. B 84 085130
[10] Sun Z, Zhou J, Pana Y, Songc Z, Maod H K, Ahuja R 2011 Proc. Natl. Acad. Sci. U.S.A. 108 10410
[11] Lai Y F, Feng J, Qiao B W, Ling Y, Lin Y Y, Tang T A, Cai B C, Chen B M 2006 Acta Phys. Sin. 55 4347 (in Chinese) [赖云峰, 冯洁, 乔保卫, 凌云, 林殷茵, 汤庭鳌, 蔡炳初, 陈邦明 2006 物理学报 55 4347]
[12] Liao Y B, Xu L, Yang F, Liu W Q, Liu D, Xu J, Ma Z Y, Chen K J 2010 Acta Phys. Sin. 59 6563 (in Chinese) [廖远宝, 徐岭, 杨菲, 刘文强, 刘东, 徐骏, 马忠元, 陈坤基 2010 物理学报 59 6563]
[13] Pirovano A 2004 IEEE Trans. Electron Dev. 51 3
[14] Juarez L F, Da S, Aron W, Lee H 2008 Phys. Rev. B 78 224111
[15] Kaewmaraya T, Ramzan M, Löfås H, Ahuja R 2013 J. Appl. Phys. 113 033510
[16] Sa B S, Zhou J, Sun Z M, Tominaga J, Ahuja R 2012 Phys. Rev. Lett. 109 096802
[17] Park J H, Eom S H, Lee H 2009 Phys. Rev. B 80 115209
[18] Kim K H, Kyoung Y K, Yun D J, Choi S J 2013 Thin Solid Films 548 40
[19] Sa B S, Zhou J, Ahuja R, Sun Z 2014 Computat. Mater. Sci. 82 66
[20] Kresse G, Hafner J 1993 Phys. Rev. B 47 558
[21] Kresse G, Furthmuller J 1996 J. Comput. Mater. Sci. 6 15
[22] Grimme S 2006 J. Comput. Chem. 27 1787
[23] Petrov I I, Immov R M, Pinker Z G 1968 Sov. Phys. Crystallogr. 13 339
[24] Kooi B J, de Hossona J Th M 2002 J. Appl. Phys. 92 3584
[25] Sun Z M, Zhou J, Ahuja R 2006 Phys. Rev. Lett. 96 055507
[26] Lee G, Jhi S H 2008 Phys. Rev. B 77 153201
[27] Kooi B J, de Hossona J Th M 2002 J. Appl. Phys. 92 3584
[28] Matsunaga T, Kojima R, Yamada N, Kifune K, Kubota Y, Takata M 2007 Acta Cryst. B63 346
[29] Yu R, Zhang W, Weng H M, Dai X, Fang Z 2011 Physics 40 7 (in Chinese) [余睿, 张薇, 翁红明, 戴希, 方忠 2011 物理 40 7]
[30] Li W, Wei X Y, Zhu J X, Ting C S, Chen Y 2014 Phys. Rev. B 89 035101
[31] Zhu Z Y, Cheng Y, Schwingenschlögl U 2012 Phys. Rev. Lett. 108 266805
[32] Zhang Q Y, Cheng Y, Schwingenschlögl U 2013 Phys. Rev. B 88 155317
[33] Singh B, Lin H, Prasad R, Bansil A 2013 Phys. Rev. B 88 195147
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