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Organic solar cells (OSCs) with the structure of ITO/MoO3(6 nm)/Rubrene(30 nm)/C70(30 nm)/PTCBI(x nm)/Al(150 nm) are fabricated. Role of perylenebisimide with extended pi system (PTCBI) modified cathode layer in Rubrene/C70 based organic solar cells is investigated. Experimental results show that the insertion of PTCBI between C70 and Al electrode can significantly improve the performance of the devices. PTCBI contributes to an Ohmic contact between the C70 layer and Al cathode, which enhances the built-in potential in OSCs. Furthermore, PTCBI avoids the contact between the excitons and the Al electrode, and reduces the damage of high energy Al ions to C70 in the cathode preparation process. The effect of PTCBI thickness on the performances of OSC is also studied. The results indicate that the optimized PTCBI thickness is 6 nm. Compared with the performances of OSC without PTCBI, the open circuit voltage (VOC), fill factor (FF), short current density (JSC), and power conservation efficiency (P) of the optimum device are ameliorated by 70.4%, 55.5%, 125.1%, 292.2%, respectively. The cause of S-shape J-V curve in organic solar cells with thick modified cathode layer is analyzed. The modified cathode layer can be divided into two regions: the PTCBI layer and the Al permeated PTCBI layer. The electron mobility of PTCBI layer is lower than the hole mobility of Rubrene layer, which results in the charge accumulation on the unaffected PTCBI layer. When the thickness value of PTCBI layer is small, the whole modified cathode layer is permeated by Al ions, and this layer has better electron mobility than the unaffected one. When the thickness of PTCBI layer is 6 nm or more, the series resistance of OSC will increase and the S-shape J-V curve appears.
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Keywords:
- organic solar cells /
- heterojunctions /
- cathode modification /
- PTCBI
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[1] Tang C W 1986 Appl. Phys. Lett. 48 183
[2] Kim J Y, Lee K, Coates N E, Moses D, Nguyen T Q, Dante M, Heeger A J 2007 Science 317 222
[3] He Z C, Zhong C M, Su S J, Xu M, Wu H B, Cao Y 2012 Nature Photon. 6 591
[4] Ahlswede E, Hanisch J, Powalla M 2007 Appl. Phys. Lett. 90 163504
[5] Li Q, Li H Q, Zhao J, Huang J, Yu J S 2013 Acta Phys. Sin. 62 128803 (in Chinese) [李青, 李海强, 赵娟, 黄江, 于军胜 2013 物理学报 62 128803]
[6] Hayakawa A, Yoshikawa O, Fujieda T, Uehara K, Yoshikawa S 2007 Appl. Phys. Lett. 90 163517
[7] Yu X, Hu Z Y, Huang Z H, Yu X M, Zhang J J, Zhao G S, Zhao Y 2013 Chin. Phys. B 22 118801
[8] Zhan Z, Liu P Y, Ye Q, Chen Z G 2012 J. Optoelectron.· Laser 23 1696 (in Chinese) [詹真, 刘彭义, 叶勤, 陈子国 2012 光电子·激光 23 1696]
[9] Wu B, Liu P Y, Li Y W, Hou L T 2010 J. Optoelectron.·Laser 21 363 (in Chinese) [吴冰, 刘彭义, 李艳武, 侯林涛 2010 光电子·激光 21 363]
[10] Li Y W, Liu P Y, Hou L T, Wu B 2010 Acta Phys. Sin. 59 1248 (in Chinese) [李艳武, 刘彭义, 侯林涛, 吴冰 2010 物理学报 59 1248]
[11] Wang Y M, Teng F, Zhou Q C, Wang Y S 2006 Appl. Surf. Sci. 252 2355
[12] Hong Z R, Huang Z H, Zeng X T 2006 Chem. Phys. Lett. 425 62
[13] Mori T, Kato K 2007 J. Photopolym. Sci. Tech. 20 61
[14] Liu R, Xu Z, Zhao S L, Zhang F J, Cao X N, Kong C, Cao W Z, Gong W 2011 Acta Phys. Sin. 60 058801 (in Chinese) [刘瑞, 徐征, 赵谡玲, 张福俊, 曹晓宁, 孔超, 曹文喆, 龚伟 2011 物理学报 60 058801]
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[16] Yang F, Shtein M, Forrest S R 2005 Nat. Mater. 4 37
[17] Yakimov A, Forrest S R. 2002 Appl. Phys. Lett. 80 1667
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[19] Wang D D, Wu Z X, Zhang X W, Wang D W, Hou X 2010 J. Lumin. 130 321
[20] Ding C G, Yang Y L, Han R S, Wang K L 2001 Phys. Rev. A 64 043201
[21] Huang W, Mi B X, Gao Z Q 2011 Orangic Electronic (Beijing: Scinece Press) p251 (in Chinese) [黄维, 密保秀, 高志强 2011 有机电子学(北京: 科学出版社) 第251页]
[22] Song Q L, Li C M 2007 Appl. Phys. Lett. 90 071109
[23] Wang M L, Song Q L, Wu H R 2007 Org. Electron. 8 445
[24] Maxwell A J, Brhwiler P A, Arvanitis D, Hasselström J, Johansson M K J, Mårtensson N 1998 Phys. Rev. B 57 7312
[25] Wang J C, Ren X C, Shi S Q, Leung C W, Paddy K L Chan 2011 Org. Electron. 12 880
[26] Finck B Y, Schwartz B J 2013 Appl. Phys. Lett. 103 053306
[27] Wagenpfahl A, Rauh D, Binder M, Deibel C, Dyakonov V 2010 Phys. Rev. B 82 115306
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