Logical integration device for two-dimensional semiconductor transition metal sulfide

Li Wei-Sheng; Zhou Jian; Wang Han-Chen; Wang Shu-Xian; Yu Zhi-Hao; Li Song-Lin; Shi Yi; Wang Xin-Ran

doi:10.7498/aps.66.218503

Abstract

The semiconductor industry has experienced exponential growth for more than 50 years, following the Moore's Law. However, traditional microelectronic devices are currently facing challenges such as high energy consumption and the short-channel effect. As an alternative, two-dimensional layered materials show the ability to restrain the carriers in a 1 nm physical limit, and demonstrate high electron mobility, mutable bandgap, and topological singularity, which will hopefully give birth to revolutionary changes in electronics. The transition metal dichalcogenide (TMDC) is regarded as a prospective candidate, since it has a large bandgap (typically about 1-2 eV for a monolayer) and excellent manufacture compatibility. Here in this paper, we review the most recent progress of two-dimensional TMDC and achievements in logic integration, especially focusing on the following key aspects:charge transport, carrier mobility, contact resistance and integration. We also point out the emerging directions for further research and development.

Keywords:

Authors and contacts

1.
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Corresponding author: Wang Xin-Ran, xrwang@nju.edu.cn

Funds: Project support by the National Natural Science Foundation of China (Grant Nos. 61325020, 61521001) and the National Basic Research Program of China (Grant Nos. 2013CBA01604, 2015CB351900).

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Cited By

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[4]	Welser J, Hoyt J L, Takagi S, Gibbons J F 1995 Electron Devices Meeting, 1994. IEDM'94. Technical Digest., International San Francisco, USA, December 11-14, 1994 p373
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