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Great attention has been paid to the terahertz (THz) technology due to its potential applications, in which THz radiation source and detector with excellent performances at the room temperature are most desired. The semi-classical Boltzmann equation is employed to study the response of electrons and holes to the electromagnetic radiation field in InAs/GaSb based type Ⅱ quantum well system (QWS). The balance equation method is used to solve the Boltzmann equation, and the influences of the structure of the QWS on the photoconductivity is studied in detail to reveal the mechanism of the photoconductivity in the QWS. The photoconductivity is influenced by the carrier density, the subband energy of the carriers and the coupling of the wavefunctions which can be modulated conveniently by the structure of the QWS. In this study, our attention focuses on the influence of the structure of the QWS on the conductivity. When the width of the InAs layer and the GaSb layer are both 8 nm, a sharp peak in photoconductivity is observed at about 0.2 THz due to the electron transition in different layers. The strength of the peak decreases slightly with the increase of the temperature, and a red shift is observed. However, the photoconductivity is not sensitive to the temperature and has good performances at relatively high temperatures up to the room temperature, which indicates that the InAs/GaSb based type-Ⅱ QWS can be used as a THz photoelectric device at room temperature.
[1] Liu H B, Zhong H, Karpowicz N, Chen Y, Zhang X C 2007 Proc. IEEE 95 1514
[2] Cao J C 2006 Physics 35 632 (in Chinese) [曹俊诚 2006 物理 35 632]
[3] Li H, Han Y J, Tan Z Y, Zhang R, Cao J C 2010 Acta Phys. Sin. 59 2169 (in Chinese) [黎华, 韩英军, 谭智勇, 张戎, 曹俊诚 2010 物理学报 59 2169]
[4] Tan Z Y, Wan W J, Li H, Cao J C 1983 Phys. Rev. B 28 842
[5] Altarelli M 1983 Phys. Rev. B 28 842
[6] Munekata H, Esaki L, Chang L L 1987 J. Vac. Sci. Technol. B 5 809
[7] Yu L J, Deng G R, Su Y H 2012 Infrared Technology 34 683 (in Chinese) [余连杰, 邓功荣, 苏玉辉 2012 红外技术 34 683]
[8] Wei X F, Xu W, Zeng Z 2007 J. Phys.: Condens. Mat. 19 506209
[9] Norton P 2006 Opto-Electton. Rev. 14 1
[10] Norton P R, Campbell J B, Horn S B, Reago D A 2000 Proc. SPIE 4130 226
[11] Horn S, Norton P, Cincotta T, Stoltz A J, Benson J D, Perconti P, Campbell J 2000 Proc. SPIE 5074 44
[12] Gautam N, Kim H S, Kutty M N, Plis E, Dawson L R, Krishna S 2010 Appl. Phys. Lett. 96 231107
[13] Liu C, Hughes T L, Qi X L, Wang K, Zhang S C 2008 Phys. Rev. Lett. 100 236601
[14] Knez I, Du R R 2012 Front. Phys. 7 200
[15] Knez I, Du R R, Sullivan G 2012 Phys. Rev. B 86 165439
[16] Knez I, Du R R 2011 Phys. Rev. Lett. 107 136603
[17] Knez I, Du R R 2012 Phys. Rev. Lett. 109 186603
[18] Yan B, Zhang S C 2012 Rep. Prog. Phys. 75 096501
[19] Yang C H, Wang G X, Zhang C, Ao Z M 2017 J. Appl. Phys. 122 133109
[20] Yang C H, Chen Y Y, Jiang J J, Ao Z M 2016 Solid State Commun. 227 23
[21] Jonsson B, Eng S T 1990 IEEE J. Quantum Elect. 26 2025
[22] Ying H, Zhang F M, Yang Y F, Li C F 2010 Chin. Phys. B 19 040306
[23] He Y, Cao Z Q, Shen Q H 2004 Chin. Phys. Lett. 21 2089
[24] Lei X L, Liu S Y 2000 J. Phys.: Condens. Mat. 12 4655
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[1] Liu H B, Zhong H, Karpowicz N, Chen Y, Zhang X C 2007 Proc. IEEE 95 1514
[2] Cao J C 2006 Physics 35 632 (in Chinese) [曹俊诚 2006 物理 35 632]
[3] Li H, Han Y J, Tan Z Y, Zhang R, Cao J C 2010 Acta Phys. Sin. 59 2169 (in Chinese) [黎华, 韩英军, 谭智勇, 张戎, 曹俊诚 2010 物理学报 59 2169]
[4] Tan Z Y, Wan W J, Li H, Cao J C 1983 Phys. Rev. B 28 842
[5] Altarelli M 1983 Phys. Rev. B 28 842
[6] Munekata H, Esaki L, Chang L L 1987 J. Vac. Sci. Technol. B 5 809
[7] Yu L J, Deng G R, Su Y H 2012 Infrared Technology 34 683 (in Chinese) [余连杰, 邓功荣, 苏玉辉 2012 红外技术 34 683]
[8] Wei X F, Xu W, Zeng Z 2007 J. Phys.: Condens. Mat. 19 506209
[9] Norton P 2006 Opto-Electton. Rev. 14 1
[10] Norton P R, Campbell J B, Horn S B, Reago D A 2000 Proc. SPIE 4130 226
[11] Horn S, Norton P, Cincotta T, Stoltz A J, Benson J D, Perconti P, Campbell J 2000 Proc. SPIE 5074 44
[12] Gautam N, Kim H S, Kutty M N, Plis E, Dawson L R, Krishna S 2010 Appl. Phys. Lett. 96 231107
[13] Liu C, Hughes T L, Qi X L, Wang K, Zhang S C 2008 Phys. Rev. Lett. 100 236601
[14] Knez I, Du R R 2012 Front. Phys. 7 200
[15] Knez I, Du R R, Sullivan G 2012 Phys. Rev. B 86 165439
[16] Knez I, Du R R 2011 Phys. Rev. Lett. 107 136603
[17] Knez I, Du R R 2012 Phys. Rev. Lett. 109 186603
[18] Yan B, Zhang S C 2012 Rep. Prog. Phys. 75 096501
[19] Yang C H, Wang G X, Zhang C, Ao Z M 2017 J. Appl. Phys. 122 133109
[20] Yang C H, Chen Y Y, Jiang J J, Ao Z M 2016 Solid State Commun. 227 23
[21] Jonsson B, Eng S T 1990 IEEE J. Quantum Elect. 26 2025
[22] Ying H, Zhang F M, Yang Y F, Li C F 2010 Chin. Phys. B 19 040306
[23] He Y, Cao Z Q, Shen Q H 2004 Chin. Phys. Lett. 21 2089
[24] Lei X L, Liu S Y 2000 J. Phys.: Condens. Mat. 12 4655
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