Magnetoelectric heterostructure and device application

Yang Na-Na; Chen Xuan; Wang Yao-Jin

doi:10.7498/aps.67.20180856

Abstract

The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Corresponding author: Wang Yao-Jin, yjwang@njust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51602156, 51790492), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160824), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 30916011104, 30916011208).

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Cited By

[1]	Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]
[2]	Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]
[3]	Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]
[4]	Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]
[5]	Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101
[6]	Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853
[7]	van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710
[8]	Benveniste Y 1995 Phys. Rev. B 51 16424
[9]	Nan C W 1994 Phys. Rev. B 50 6082
[10]	Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408
[11]	Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 物理学报 55 3766]
[12]	Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123
[13]	Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147
[14]	Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948
[15]	Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107
[16]	Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111
[17]	Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 物理学报 65 167501]
[18]	Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海, 文玉梅, 李平, 卞雷祥 2008 物理学报 57 7292]
[19]	Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053905
[20]	Bichurin M I, Petrov V M, Averkin S V, Liverts E 2010 J. Appl. Phys. 107 053904
[21]	Li M H, Berry D, Das J, Gray D, Li J F, Viehland D 2011 J. Am. Ceram. Soc. 94 3738
[22]	Gao J Q, Das J, Xing Z P, Li J F, Viehland D 2010 J. Appl. Phys. 108 084509
[23]	Liu G, Nan C W, Cai N, Lin Y H 2004 J. Appl. Phys. 95 2660
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[25]	Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferr. 51 794
[26]	Wang Y J, Hasanyan D, Li M H, Gao J Q, Li J F, Viehland D 2013 IEEE Trans. Ultrason. Ferr. 60 1227
[27]	Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferr. 50 1253
[28]	Wang Y J, Hasanyan D, Li J F, Viehland D, Luo H S 2012 Appl. Phys. Lett. 100 202903
[29]	Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908
[30]	Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382
[31]	Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545
[32]	Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911
[33]	Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511
[34]	Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305
[35]	Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776
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[37]	Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232
[38]	Jiao J 2013 Ph. D. Dissertation (Shanghai: University of Chinese Academy of Sciences) (in Chinese) [焦杰 2013 博士学位论文 (上海:中国科学院大学)]
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[41]	Bichurin M I, Petrov R V, Petrov V M 2013 Appl. Phys. Lett. 103 092902
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[43]	Palneedi H, Maurya D, Kim G Y, Priya S, Kang S J L, Kim K H, Choi S Y, Ryu J 2015 Appl. Phys. Lett. 107 012904
[44]	Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018
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Vol. 67, Issue 15 - 2018-08-05

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