Review of high temperature piezoelectric materials, devices, and applications

Wu Jingen; Gao Xiangyu; Chen Jianguo; Wang Chun-Ming; Zhang Shujun; Dong Shuxiang

doi:10.7498/aps.67.20181091

Abstract

Piezoelectric functional materials have been extensively studied and employed in numerous devices. With the rapid development of modern industries, such as power plants, aerospace, automotive, renewable energy and material processing industries, the high temperature piezoelectric materials that can work in extreme environments are in great demand. Piezoelectric materials including piezoelectric single crystals, ceramics and films, are at the heart of electromechanical actuation and sensing devices. A variety of applications where piezoelectric actuators and sensors operate at elevated temperatures (T 200℃) would be extremely desired. The actuators need to work efficiently with high strokes, torques, and forces while operating under relatively harsh conditions. These include high-temperature fans and turbines, motors for valves or natural gas industries, kiln automation, and actuators for automotive engines such as fuel injectors and cooling system elements. Yet, the majority of industrial actuator applications are at or below the 250℃ temperature limit. In addition to the increase in operational temperatures of piezoelectric motors and actuators, a future area of interest is high-temperature MEMS research, which can be used for high-temperature valving. On the other hand, the piezoelectric sensors have been widely used for structural health monitoring applications. This is due to their wide bandwidth, versatility, simplicity, high rigidity, high stability, high reproducibility, fast response time, wide operating temperature range, insensitivity to electric and magnetic fields, the capacity for miniaturization and minimal dependence on moving parts and low power consumption, and wide piezoelectric materials and mechanisms selections, which will greatly benefit the sensing applications. In addition to the temperature usage range, the piezoelectric sensors must withstand the harsh environments encountered in space, engine, power plants, and also need to possess high sensitivity, resistivity, reliability, stability and robustness. In order to use the piezoelectric materials for a specific high temperature application, many aspects need to be considered together with piezoelectric properties, such as phase transition, thermal aging, thermal expansion, chemical stability, electrical resistivity, and the stability of properties at elevated temperature. In this paper, ferroelectric materials with high Curie point, including perovskite-type ferroelectrics, bismuth layer structured ferroelectrics, tungsten-bronze structured ferroelectrics, together with non-ferroelectric piezoelectric single crystals, are surveyed. The crystal structure characteristics, high temperature piezoelectric properties, and recent research progress are discussed. A series of high temperature piezoelectric devices and their applications are reviewed, including high temperature piezoelectric detectors, sensors, transducers, actuators, etc. Finally, recent important research topics, the future development of high temperature piezoelectric materials and the potential new applications are summarized.

Keywords:

high temperature piezoelectric materials /
extreme environments /
piezoelectric detect /
sensors

Authors and contacts

1.
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China;
2.
Beijing Key Laboratory of Magneto-Electrical Functional Materials and Devices, Peking University, Beijing 100817, China;
3.
College of Materials, Shanghai University, Shanghai 200444, China;
4.
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Ji'nan 250100, China;
5.
Australian Institute of Advanced Materials, Wollongong University, Wollongong, NSW 2500, Australia;
6.
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China

Corresponding author: Chen Jianguo, kpfocus@shu.edu.cn;wangcm@sdu.edu.cn;shujun@uow.edu.au;sxdong@pku.edu.cn ; Wang Chun-Ming, kpfocus@shu.edu.cn;wangcm@sdu.edu.cn;shujun@uow.edu.au;sxdong@pku.edu.cn ; Zhang Shujun, kpfocus@shu.edu.cn;wangcm@sdu.edu.cn;shujun@uow.edu.au;sxdong@pku.edu.cn ; Dong Shuxiang, kpfocus@shu.edu.cn;wangcm@sdu.edu.cn;shujun@uow.edu.au;sxdong@pku.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51772005, 51072003, 51872166, 51872180), the Natural Science Foundation of Shanghai, China (Grant No. 18ZR1414800), the Fundamental Research Fund for Shandong University, China (Grant Nos. 2016JC036, 2017JC032), and the Beijing Key Laboratory for Magnetoelectric Materials and Devices.

References

[1]	Curie J, Curie P 1880 Bull. Soc. Min. France 3 90
[2]	Yun C, Ishii T, Nakamura K, Ueha S, Akashi K 2001 J. J. Appl. Phys. 40 3773
[3]	Cady W G 2018 Piezoelectricity: Volume Two (New York: Courier Dover Publications) pp667-731
[4]	Wang C L, Li J C, Zhao M L 2009 Piezoelectric Ferroelectric Physics (Beijing: Science Press) p73 (in Chinese)[王春雷, 李吉超, 赵明磊 2009 压电铁电物理(北京:科学出版社) 第73页]
[5]	Zhang F X, Wang L K 2001 Modern Piezoelectric Research (Vol. 2) (Beijing: Science Press) p3 (in Chinese)[张福学, 王丽坤 2001 现代压电学(中册)(北京:科学出版社) 第3页]
[6]	Zhang F X 1987 Applications of Piezoelectrics and Ferroelectrics (Beijing: National Defense Industry Press) p1 (in Chinese)[张福学 1987 压电铁电应用(北京: 国防工业出版社) 第1页]
[7]	Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 31101
[8]	Uchino K 2010 Advanced Piezoelectric Materials: Science and Technology (Cambridge: Woodhead Publishing Ltd) p5
[9]	Jaffe B (translated by Lin S H) 1979 Piezoelectric Ceramics (Version 1) (Beijing: Science Press) p1 (in Chinese)[贾菲B 著 (林声和译) 1979 压电陶瓷(第一版)(北京: 科学出版社) 第1页]
[10]	Kumar A, Bhanu Prasad V, James Raju K C, James A R 2015 J. Mater. Sci.: Mater. El. 26 3757
[11]	Ye Z G, Noheda B, Dong M 2001 Phys. Rev. B 64 184114
[12]	Noheda B, Cox D, Shirane G, Park S, Cross L, Zhong Z 2001 Phys. Rev. Lett. 86 3891
[13]	Liu J K 2012 Piezoelectric and Optics 34 1 (in Chinese)[刘军凯 2012 压电与声光 34 1]
[14]	Shi W, Ran Y Z, Zuo J H, Wang Q, Tao T, Ouyang K 2011 Journal of Tongren University 13 5 (in Chinese)[石维, 冉耀宗, 左江红, 王强, 陶涛, 欧永康 2011 铜仁学院学报 13 5]
[15]	Ouyang Y, Li L C, Xu Y S, Gan J R 1999 Automobile Electronics 4 5 (in Chinese)[欧阳烨, 李凌川, 徐元森, 甘俊仁 1999 汽车电器 4 5]
[16]	Luan G D, Zhang J D, Wang R Q 2005 Piezoelectric Transducer and Transducer Array (Beijing: Peking University Press) p80 (in Chinese)[栾桂冬, 张金铎, 王仁乾 2005 压电换能器和换能器阵(北京:北京大学出版社) 第80页]
[17]	Egerton L, Dillon D M 1959 J. Am. Ceram. Soc. 42 438
[18]	Jaffe B, Cook W R, Jaffe H 1971 Piezoelectric Ceramics (New York: Academic Press) p247
[19]	Saito Y, Takao H, Tani T, Nonoyama T, Takatori K, Homma T, Nagaya T, Nakamura M 2004 Nature 432 84
[20]	Guo Y, Kakimoto K, Ohsato H 2004 Appl. Phys. Lett. 85 4121
[21]	Guo Y, Kakimoto K, Ohsato H 2005 Mater. Lett. 59 242
[22]	Zang G Z, Wang J F, Chen H C 2006 Appl. Phys. Lett. 88 212908
[23]	Wu J, Wang Y, Xiao D 2007 Appl. Phys. Lett. 91 132914
[24]	Zhang S, Xia R, Hao H, Liu H, Shrout T R 2008 Appl. Phys. Lett. 92 152904
[25]	Zuo R, Fu J 2011 J. Am. Ceram. Soc. 94 1467
[26]	Zhang B, Wu J, Cheng X 2013 ACS Appl. Mater. Interfaces 5 7718
[27]	Cheng X, Wu J, Wang X 2013 Appl. Phys. Lett. 103 52906
[28]	Wang X, Wu J, Xiao D 2014 J. Am. Ceram. Soc. 136 2905
[29]	Wu J, Wang X, Cheng X 2014 J. Appl. Phys. 115 114104
[30]	Fernando R M, Rigoberto L J 2015 ACS Appl. Mater. Interfaces 7 23080
[31]	Wang K, Yao F Z, Jo W, Gobeljic D, Shvartsman V V, Lupascu D C, Li J F, Rdel J 2013 Adv. Funct. Mater. 23 4079
[32]	Yao F Z, Wang K, Jo W, Webber K G, Comyn T P, Ding J X, Xu B, Cheng L Q, Zheng M P, Hou Y D, Li J F 2016 Adv. Funct. Mater. 26 1217
[33]	Zhang M H, Wang K, Du Y J, Dai G, Sun W, Li G, Hu D, Thong H C, Zhao C, Xi X Q, Yue Z X, Li J F 2017 J. Am. Chem. Soc. 139 3889
[34]	Li P, Zhai J, Shen B 2018 Adv. Mater. 30 1705171
[35]	Eitel R E, Randall C A, Shrout T R, Rehrig P W, Hackenberger W, Park S E 2001 Jpn. J. Appl. Phys. 40 5999
[36]	Goldschmidt V M, Krystallochemie D G D 1926 Science of Nature 14 477
[37]	Eitel R E, Randall C A, Shrout T R, Park S E 2002 Jpn. J. Appl. Phys. 41 2099
[38]	Iniguez J, Vanderbilt D, Bellaniche L 2003 Phys. Rev. B 67 224107
[39]	Zhang S, Randall C A, Shrout T R 2003 Appl. Phys. Lett. 83 3150
[40]	Zhang S, Eitel R E, Randall C A, Shrout T R 2005 Appl. Phys. Lett. 86 262904
[41]	Chen S, Dong X, Mao C, Cao F 2006 J. Am. Ceram. Soc. 89 3270
[42]	Zou T T, Wang X H, Wang H, Zhong C F, Li L T, Chen I W 2008 Appl. Phys. Lett. 93 192913
[43]	Wang Y, Cai K, Shao T, Zhao Q, Guo D 2015 J. Appl. Phys. 117 164102
[44]	Chen J, Hu Z, Shi H, Li M, Dong S 2012 J. Phys. D: Appl. Phys. 45 465303
[45]	Zhang S, Yu Y, Wu J, Gao X, Huang C, Dong S 2018 J. Alloy. Compd. 731 1140
[46]	Aurivillius B 1949 Ark. Kemi 1 463
[47]	Subbarao E C 1962 J. Phys. Chem. Solids 23 665
[48]	Subbarao E C 1962 J. Am. Ceram. Soc. 45 166
[49]	Takenaka T, Sakata K 1980 Jpn. J. Appl. Phys. 19 31
[50]	Takenaka T, Sakata K 1984 J. Appl. Phys. 55 1092
[51]	Rae A D, Thompson J G, Withers R L 1991 Acta Cryst. B 47 870
[52]	Rae A D, Thompson J G, Withers R L, Willis A C 1990 Acta Cryst. B 46 474
[53]	Withers R L, Thompson J G, Rae A D 1991 J. Solid State Chem. 94 404
[54]	Wang C M, Zhao L, Wang J F, Zhang S J, Shrout T R 2009 Phys. Stat. Sol. (RRL) 3 7
[55]	Ismunandar, Kennedy B J 1999 J. Mater. Chem. 9 541
[56]	Macquart R, Kennedy B J, Kubota Y, Nishibori E, Takata M 2000 Ferroelectrics 248 27
[57]	Hervoches C H, Snedden A, Riggs R, Kilcoyne S H, Manuel P, Lightfoot P 2002 J. Solid State Chem. 164 280
[58]	Borg S, Svensson G 2001 J. Solid State Chem. 157 160
[59]	Ismunandar, Kamiyama T, Hoshikawa A, Zhou Q, Kennedy B J, Kubota Y, Kato K 2004 J. Solid State Chem. 177 4188
[60]	de Araujo C A P, Cuchiaro J D, McMillan L D, Scott M C, Scott J F 1995 Nature 374 627
[61]	Auciello O, Foster C M, Ramesh R 1998 Annu. Rev. Mater. Sci. 28 501
[62]	Auciello O, Scott J F, Ramesh R 1998 Phys. Today 51 22
[63]	Du X, Chen I W 1998 J. Am. Ceram. Soc. 81 3253
[64]	Du X, Chen I W 1998 J. Am. Ceram. Soc. 81 3260
[65]	Du X, Chen I W 1998 J. Am. Ceram. Soc. 81 3265
[66]	Ganpule C S, Stanishevsky A, Aggarwal S, Melngailis J, Williams E, Ramesh R, Joshi V, de Araujo C P 1999 Appl. Phys. Lett. 75 3874
[67]	Chon U, Kim K B, Jang H M, Yi G C 2001 Appl. Phys. Lett. 79 3137
[68]	Ding Y, Liu J S, Qin H X, Zhu J S, Wang Y N 2001 Appl. Phys. Lett. 78 4175
[69]	Kimura M, Sawada T, Ando A, Sakabe Y 1999 Jpn. J. Appl. Phys. 38 5557
[70]	Takeuchi T, Tani T, Saito Y 1999 Jpn. J. Appl. Phys. 38 5553
[71]	Hong S H, Trolier McKinstry S, Messing G L 2000 J. Am. Ceram. Soc. 83 113
[72]	Pardo L, Castro A, Millan P, Alemany C, Jimenez R, Jimenez B 2000 Acta Mater. 48 2421
[73]	Yan H, Li C G, Zhou J G, Zhu W M, He L X, Song Y X 2000 Jpn. J. Appl. Phys. 39 6339
[74]	Mao X, Wang W, Chen X, Lu Y 2009 Appl. Phys. Lett. 95 082901
[75]	Bai W, Gao Y Q, Zhu J Y, Meng X J, Lin T, Yang J, Zhu Z Q, Chu J H 2011 J. Appl. Phys. 109 064901
[76]	Wu F, Chen Z, Chen Y B, Zhang S, Zhou J, Zhu Y, Chen Y 2011 Appl. Phys. Lett. 98 212501
[77]	Birenbaum A Y, Ederer C 2014 Phys. Rev. B 90 214109
[78]	Zhao H, Kimura H, Cheng Z, Osada M, Wang J, Wang X, Dou S, Liu Y, Yu J, Matsumoto T, Tohei T, Shibata N, Ikuhara Y 2014 Sci. Rep. 4 5255
[79]	Wang C M, Wang J F 2006 Appl. Phys. Lett. 89 202905
[80]	Wang C M, Wang J F, Zhang S J, Shrout T R 2009 J. Appl. Phys. 105 094110
[81]	Wang Q, Wang C M, Wang J F, Zhang S 2016 Ceram. Int. 42 6993
[82]	Wang C M, Zhang S J, Wang J F, Zhao M L, Wang C L 2009 Mater. Chem. Phys. 118 21
[83]	Sun L, Feng C, Chen L, Huang S 2007 J. Am. Ceram. Soc. 90 3875
[84]	Zhang H, Yan H, Reece M J 2010 J. Appl. Phys. 108 014109
[85]	Jiang X P, Yang Q, Zhou S L, Chen C, Chen Y, Tu N, Yu Z D 2011 J. Am. Ceram. Soc. 94 1109
[86]	Chen Y, Liang D, Wang Q, Zhu J 2014 J. Appl. Phys. 116 074108
[87]	Wang Q, Liang Y, Wang C M, Wang C L, Zhao M L 2015 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA) Jinan, October 30-November 2, 2015 p70
[88]	Zhao T L, Wang C M, Wang C L, Wang Y M, Dong S 2015 Mat. Sci. Eng. B 201 51
[89]	Cao Z P, Wang C M, Zhao T L, Yu S L, Wu H Z, Wang Y M, Wang Q, Liang Y, Wei Y N, Zhang Y, Liu Y, Tang X S 2015 Ceram. Int. 41 13974
[90]	Fang P, Fan H, Xi Z, Chen W 2012 Solid State Commun. 152 979
[91]	Wang C M, Zhao L, Liu Y, Withers R L, Zhang S, Wang Q 2016 Ceram. Int. 42 4268
[92]	Wang C M, Wang J F 2008 J. Am. Ceram. Soc. 91 918
[93]	Wang C M, Wang J F, Zhang S J, Shrout T R 2009 Phys. Stat. Sol. (RRL) 3 49
[94]	Cai K, Huang C, Guo D 2017 J. Phys. D: Appl. Phys. 50 155302
[95]	Shen Z Y, Luo W Q, Tang Y, Zhang S, Li Y 2016 Ceram. Int. 42 7868
[96]	Wang Q, Cao Z P, Wang C M, Fu Q W, Yin D F, Tian H H 2016 J. Alloys Compd. 674 37
[97]	Cao Z P, Wang C M, Lau K, Wang Q, Fu Q W, Tian H H, Yin D F 2016 Ceram. Int. 42 11619
[98]	Guo Z L, Wang C M, Zhao T L, Yu S L, Cao Z P 2013 Mater. Chem. Phys. 140 260
[99]	Magneli A 1949 Arkiv for Kemi 1 213
[100]	Jamieson P B, Abrahams S C, Bernstein J L 1969 J. Chem. Phys. 50 4352
[101]	Hussain A, Gruehn R, Ruseher C H 1979 J. Alloys Compd. 246 51
[102]	Skokan M R, Moulton W G, Morris R C 1978 B. Am. Phys. Soc. 23 231
[103]	Franeombe M H 1960 Acta Crystallogr. 13 131
[104]	Sleight A W 1966 Acta Chem. Scand. 20 1102
[105]	Stennett M C, Reaney I M, Miles G C, Woodward D I, West A R, Kirk C A, Levin I 2007 J. Appl. Phys. 101 104114
[106]	Chen X M, Yuan Y, Sun Y H 2005 J. Appl. Phys. 97 074108
[107]	Zhu X L, Wu S Y, Chen X M 2007 Appl. Phy. Lett. 91 162906
[108]	Bai Y 2011 M. S. Thesis (Hangzhou: Zhejiang University) (in Chinese)[白阳 2011 硕士学位论文(杭州: 浙江大学)]
[109]	Tizeff. https://upload.wikimedia.org/wikipedia/commons/thumb/a/a3/PbNb2O6.png/116px-PbNb2O6.png[2018-09-16]
[110]	Li M Y, Cheng L, Gu X Y, Zhang Y P, Liao R H 2006 Journal of Ceramics 27 3 (in Chinese)[李明月, 程亮, 顾幸勇, 张玉平, 廖润华 2006 陶瓷学报 27 3]
[111]	Cai K, Jiang F, Deng P, Ma J, Guo D 2015 J. Am. Ceram. Soc. 98 3165
[112]	Luan G D, Zhang J D, Wang R Q 2005 Piezoelectric Transducer and Transducer Array (Beijing: Peking University Press) p93 (in Chinese)[栾桂冬, 张金铎, 王仁乾 2005 压电换能器和换能器阵(北京: 北京大学出版社) 第93页]
[113]	Kenji U 2010 Ferroelectric Devices (New York: Taylor Francis Group CRC Press) p171
[114]	Zhang P L, Zhong W L 1996 Piezoelectric Materials and Device Physics (Jinan: Shandong Science Technology Press) p113 (in Chinese)[张沛霖, 钟维烈 1996 压电材料与器件物理 (济南: 山东科学技术出版社) 第113页]
[115]	Qin Z K 1980 Piezoelectric Quartz Crystal (Beijing: National Defense Industry Press) p100 (in Chinese)[秦自楷1980 压电石英晶体(北京: 国防工业出版社) 第100页]
[116]	Shekhar P C, Schreuer J 2012 J. Appl. Phys. 111 13516
[117]	Smith R T 2003 J. Appl. Phys. 42 2219
[118]	Krempl P, Schleinzer G, Wallno Fer W 1997 Sensors Actuators A: Physical 61 361
[119]	Sotnikov A V, Schmidt H, Weihnacht M, Smirnova E P, Chemekova T Y, Makarov Y N 2010 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57 808
[120]	Riekkinen T, Nurmela A, Molarius J 2009 Thin Solid Films 517 6588
[121]	Bohm J, Chilla E, Flannery C, Frohlich H J, Hauke T, Heimann R B, Hengst M, Straube U 2000 J. Cryst. Growth 216 293
[122]	Yu F P 2011 Ph. D. Dissertation (Jinan: Shandong University) (in Chinese)[于法鹏 2011 博士学位论文(济南: 山东大学)]
[123]	Kyawthetlatt (Nus). https://cpb-us-w2.wpmucdn.com/blog.nus.edu.sg/dist/3/3243/files/2013/08/image2-1qaf3mb.png[2013-08]
[124]	Gong M X 2001 International Electronic Elements 26 9 (in Chinese)[龚美霞 2001 国外电子元器件 26 9]
[125]	Helen Brand. https://www.iycr2014.org/learn/crystallography365/articles/20141209[2014-02-09]
[126]	London D 2011 Can. Mineral. 49 117
[127]	Somma C, Reimann K, Flytzanis C, Elsaesser T, Woerner M 2014 Phys. Rev. Lett. 112 146602
[128]	Solid State. https://commons.wikimedia.org/wiki/File:LiNbO3.png[2008-04-15]
[129]	Carruthers J R, Peterson G E, Grasso M, Bridenbaugh P M 1971 J. Appl. Phys. 42 1846
[130]	Kitamura K 1999 J. Cryst. Growth 197 889
[131]	Malovichko G I, Grachev V G, Yurchenko L P, Proshko V Y, Kokanyan E P, Gabrielyan V T 1992 Physica Status Solidi 133 K29
[132]	Malovichko G I, Grachev V G, Kokanyan E P, Schirmer O F, Betzler K, Gather B, Jermann F, Klauer S, Schlarb U, Whlecke M 1993 Appl. Phys. A 56 103
[133]	Jundt D H, Fejer M M, Byer R L 1990 IEEE J. Quantum Elect. 26 135
[134]	Bordui P F, Jundt D H, Standifer E M, Norwood R G, Sawin R L, Galipeau J D 1999 J. Appl. Phys. 85 3766
[135]	Haines J, Cambon O, Prudhomme N, Fraysse G, Keen D A, Chapon L C, Tucker M G 2006 Phys. Rev. B 73 10
[136]	Philippot E, Ibanez A, Goiffon A, Cochez M, Zarka A, Capelle B, Schwartzel J, Dtaint J 1993 J. Cryst. Growth 130 195
[137]	Li J, Liang X, Xu G, Zhao H, Wang J 2007 Piezoelectrics and Acoustooptics 29 695
[138]	Krempl P, Schleinzer G, Wallno Fer W 1997 Sensors Actuators A: Physical 61 361
[139]	Fachberger R, Bruckner G, Knoll G, Hauser R, Biniasch J, Reindl L 2004 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51 1427
[140]	Sotnikov A V, Schmidt H, Weihnacht M, Smirnova E P, Chemekova T Y, Makarov Y N 2010 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57 808
[141]	Zhao C L, Song B, Zhang X H, Han J C 2012 Materials Review A: Review 26 11 (in Chinese)[赵超亮, 宋波, 张幸红, 韩杰才 2012 材料导报A: 综述篇 26 11]
[142]	Oreshko A P, Ovchinnikova E N, Rogalev A, Wilhelm F, Mill B V, Dmitrienko V 2018 J. Synchrotron Rad. 25 1
[143]	Dou R, Liu W, Zhang Q, Zhang Q, Ding S, Shi Z, Sun D, Wang J 2017 Appl. Phys. A 23 1
[144]	Sato J, Takeda H, Morikoshi H, Shimamura K, Rudolph P, Fukuda T 1998 J. Cryst. Growth 191 746
[145]	NaKaoa H, Nishida M, Shikida T, Shimisu H, Takeda H, Shiosaki T 2006 J. Alloy. Compd. 408-412 582
[146]	Kumatoriya M, Sato H, Nakanishi J, Fujii T, Kadota M, Sakabe Y 2001 J. Cryst. Growth 229 289
[147]	Zhang S, Yoshikawa A, Kamada K, Frantz E, Xia R, Snyder D W, Fukuda T, Shrout T R 2008 Solid State Commun. 148 213
[148]	Zhang S, Kong H, Xia R, Zheng Y, Xin J, Shrout T R 2010 Solid State Commun. 150 435
[149]	Xiong K, Zheng Y, Tu X, Zhang S, Kong H, Shi E 2014 J. Cryst. Growth 401 820
[150]	Zhang S, Zheng Y, Kong H, Xin J, Frantz E, Shrout T R 2009 J. Appl. Phys. 105 114107
[151]	Douchet G, Sthal F, Bigler E, Bourquin R 2010 Solid State Sci. 12 325
[152]	le Traon O, Masson S, Chartier C, Janiaud D 2010 Solid State Sci. 12 318
[153]	Tortissier G, Blanc L, Tetelin A, Lachaud J, Benoit M, Condra V, Dejous C, Rebire D 2009 Procedia Chemistry 1 963
[154]	Zhong D, Teng B, Kong W, Ji S, Zhang S, Li J, Cao L, Jing H, He L 2017 J. Alloy. Compd. 692 413
[155]	Fei Y, Chai B H T, Ebbers C A, Liao Z M, Schaffers K I, Thelin P 2006 J. Cryst. Growth 290 301
[156]	Zhang S, Yu F, Xia R, Fei Y, Frantz E, Zhao X, Yuan D, Chai B H T, Snyder D, Shrout T R 2011 J. Cryst. Growth 318 884
[157]	Takeda H, Nakao H, Izukawa S, Shimizu H, Nishida T, Okamura S, Shiosaki T 2006 J. Alloy. Compd. 408-412 474
[158]	Zhang S, Fei Y, Chai B H T, Frantz E, Snyder D W, Jiang X, Shrout T R 2008 Appl. Phys. Lett. 92 202905
[159]	Yu F, Zhang S, Zhao X, Yuan D, Wang Q, Shrout T R 2010 Physica Status Solidi: Rapid Research Letters 4 103
[160]	Yu F, Zhang S, Zhao X, Yuan D, Wang Q, Shrout T R 2011 Physica Status Solidi: Rapid Research Letters 5 47
[161]	Shen C, Zhang S, Cao W, Cong H, Yu H, Wang J, Zhang H 2015 J. Appl. Phys. 117 64106
[162]	Shen C, Zhang S, Wang D, Xu T, Yu H, Cao W, Wang J, Zhang H 2015 Crystengcomm 17 1791
[163]	Takeda H, Hagiwara M, Noguchi H, Hoshina T, Takahashi T, Kodama N, Tsurumi T 2013 Appl. Phys. Lett. 102 242907
[164]	Zhang Y, Yin X, Yu H, Cong H, Zhang H, Wang J, Boughton R I 2012 Cryst. Growth Des. 12 622
[165]	Shen C, Zhang H, Cong H, Yu H, Wang J, Zhang S 2014 J. Appl. Phys. 116 44106
[166]	Chen J, Liu G, Li X, Chen Z, Dong S X 2013 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 60 446
[167]	Shi H, Chen J, Liu G, Xiao W, Dong S X 2013 Appl. Phys. Lett. 102 242904
[168]	Chen J, Li X, Liu G, Chen Z, Dong S X 2012 Appl. Phys. Lett. 101 012909
[169]	Li X, Chen J, Chen Z, Dong S X 2012 Appl. Phys. Lett. 101 072902
[170]	Chen J, Chen Z, Li X, Dong S X 2013 Appl. Phys. Lett. 102 052902
[171]	Stewart Sherrit. https://www.techbriefs.com/component/content/article/3-ntb/tech-briefs/mechanics-and-machinery/9440[2011-03-01]
[172]	Bar-Cohen Y 2014 High Temperature Materials and Mechanisms (New York: CRC Press/Taylor and Francis group) pp427-465
[173]	Bao X, Scott J, Boudreau K, Bar-Cohen Y, Sherrit S, Badescu M, Zhang S, Shrout T R 2009 SPIE 2009 7292 72922B
[174]	Wu J, Shi H, Zhao T, Yu Y, Dong S X 2016 Adv. Funct. Mater. 26 7186
[175]	Wu J, Chen X, Chu Z, Shi W, Yu Y, Dong S X 2016 Appl. Phys. Lett. 109 173901
[176]	Parks D, Zhang S, Tittmann B 2013 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 60 1010
[177]	Johnson J A, Kim K, Zhang S, Wu D, Jiang X 2014 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 61 805
[178]	Johnson J A, Kim K, Zhang S, Di Wu, Jiang X 2013 Proceedings of Spie. 8694 869428
[179]	Kim K, Zhang S, Salazar G, Jiang X 2012 Sensors and Actuators A: Physical 178 40
[180]	Kim K, Zhang S, Huang W, Yu F, Jiang X 2011 J. Appl. Phys. 109 126103
[181]	Zhang S, Jiang X, Lapsley M, Moses P, Shrout T R 2010 Appl. Phys. Lett. 96 13506
[182]	Hamidon M, Skarda V, White N, Krispel F, Krempl P, Binhack M, Buff W 2006 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53 2465
[183]	Pereira da Cunha M, Lad R J, Moonlight T, Moulzolf S, Canabal A, Behanan R, Davulis P M, Frankel D, Bernhardt G, Pollard T, McCann D F 2011 IEEE Sensors Proceedings 2011 p614
[184]	RFSAW Inc., https://rfsaw.com/[2018-09-16]
[185]	Aubert T, Bardong J, Legrani O, Elmazria O, Badreddine Assouar M, Bruckner G, Talbi A 2013 J. Appl. Phys. 114 14505
[186]	Fritze H, Tuller H L, Seh H, Borchardt G 2001 Sensors and Actuators B 76 103
[187]	Fritze H, Seh H, Tuller H L, Borchardt G 2001 J. Eur. Ceram. Soc. 21 1473
[188]	Takeda H, Hagiwara M, Noguchi H, Hoshina T, Takahashi T, Kodama N, Tsurumi T 2013 Appl. Phys. Lett. 102 242907
[189]	Zhang S, Yu F 2011 J. Am. Ceram. Soc. 94 3153
[190]	Huang C, Cai K, Wang Y, Bai Y, Guo D 2018 J. Mater. Chem. C 6 1433
[191]	Wang Y, Cai K, Jiang F, Zhang J, Guo D 2014 Sensor Actuat A: Physical 216 335
[192]	Zhang S, Fei Y, Frantz E, Snyder D W, Chai B H, Shrout T R 2008 IEEE Trans. Ultrason. Ferroelectr. Freq. Control. 55 2703

Cited By

[1]	Curie J, Curie P 1880 Bull. Soc. Min. France 3 90
[2]	Yun C, Ishii T, Nakamura K, Ueha S, Akashi K 2001 J. J. Appl. Phys. 40 3773
[3]	Cady W G 2018 Piezoelectricity: Volume Two (New York: Courier Dover Publications) pp667-731
[4]	Wang C L, Li J C, Zhao M L 2009 Piezoelectric Ferroelectric Physics (Beijing: Science Press) p73 (in Chinese)[王春雷, 李吉超, 赵明磊 2009 压电铁电物理(北京:科学出版社) 第73页]
[5]	Zhang F X, Wang L K 2001 Modern Piezoelectric Research (Vol. 2) (Beijing: Science Press) p3 (in Chinese)[张福学, 王丽坤 2001 现代压电学(中册)(北京:科学出版社) 第3页]
[6]	Zhang F X 1987 Applications of Piezoelectrics and Ferroelectrics (Beijing: National Defense Industry Press) p1 (in Chinese)[张福学 1987 压电铁电应用(北京: 国防工业出版社) 第1页]
[7]	Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 31101
[8]	Uchino K 2010 Advanced Piezoelectric Materials: Science and Technology (Cambridge: Woodhead Publishing Ltd) p5
[9]	Jaffe B (translated by Lin S H) 1979 Piezoelectric Ceramics (Version 1) (Beijing: Science Press) p1 (in Chinese)[贾菲B 著 (林声和译) 1979 压电陶瓷(第一版)(北京: 科学出版社) 第1页]
[10]	Kumar A, Bhanu Prasad V, James Raju K C, James A R 2015 J. Mater. Sci.: Mater. El. 26 3757
[11]	Ye Z G, Noheda B, Dong M 2001 Phys. Rev. B 64 184114
[12]	Noheda B, Cox D, Shirane G, Park S, Cross L, Zhong Z 2001 Phys. Rev. Lett. 86 3891
[13]	Liu J K 2012 Piezoelectric and Optics 34 1 (in Chinese)[刘军凯 2012 压电与声光 34 1]
[14]	Shi W, Ran Y Z, Zuo J H, Wang Q, Tao T, Ouyang K 2011 Journal of Tongren University 13 5 (in Chinese)[石维, 冉耀宗, 左江红, 王强, 陶涛, 欧永康 2011 铜仁学院学报 13 5]
[15]	Ouyang Y, Li L C, Xu Y S, Gan J R 1999 Automobile Electronics 4 5 (in Chinese)[欧阳烨, 李凌川, 徐元森, 甘俊仁 1999 汽车电器 4 5]
[16]	Luan G D, Zhang J D, Wang R Q 2005 Piezoelectric Transducer and Transducer Array (Beijing: Peking University Press) p80 (in Chinese)[栾桂冬, 张金铎, 王仁乾 2005 压电换能器和换能器阵(北京:北京大学出版社) 第80页]
[17]	Egerton L, Dillon D M 1959 J. Am. Ceram. Soc. 42 438
[18]	Jaffe B, Cook W R, Jaffe H 1971 Piezoelectric Ceramics (New York: Academic Press) p247
[19]	Saito Y, Takao H, Tani T, Nonoyama T, Takatori K, Homma T, Nagaya T, Nakamura M 2004 Nature 432 84
[20]	Guo Y, Kakimoto K, Ohsato H 2004 Appl. Phys. Lett. 85 4121
[21]	Guo Y, Kakimoto K, Ohsato H 2005 Mater. Lett. 59 242
[22]	Zang G Z, Wang J F, Chen H C 2006 Appl. Phys. Lett. 88 212908
[23]	Wu J, Wang Y, Xiao D 2007 Appl. Phys. Lett. 91 132914
[24]	Zhang S, Xia R, Hao H, Liu H, Shrout T R 2008 Appl. Phys. Lett. 92 152904
[25]	Zuo R, Fu J 2011 J. Am. Ceram. Soc. 94 1467
[26]	Zhang B, Wu J, Cheng X 2013 ACS Appl. Mater. Interfaces 5 7718
[27]	Cheng X, Wu J, Wang X 2013 Appl. Phys. Lett. 103 52906
[28]	Wang X, Wu J, Xiao D 2014 J. Am. Ceram. Soc. 136 2905
[29]	Wu J, Wang X, Cheng X 2014 J. Appl. Phys. 115 114104
[30]	Fernando R M, Rigoberto L J 2015 ACS Appl. Mater. Interfaces 7 23080
[31]	Wang K, Yao F Z, Jo W, Gobeljic D, Shvartsman V V, Lupascu D C, Li J F, Rdel J 2013 Adv. Funct. Mater. 23 4079
[32]	Yao F Z, Wang K, Jo W, Webber K G, Comyn T P, Ding J X, Xu B, Cheng L Q, Zheng M P, Hou Y D, Li J F 2016 Adv. Funct. Mater. 26 1217
[33]	Zhang M H, Wang K, Du Y J, Dai G, Sun W, Li G, Hu D, Thong H C, Zhao C, Xi X Q, Yue Z X, Li J F 2017 J. Am. Chem. Soc. 139 3889
[34]	Li P, Zhai J, Shen B 2018 Adv. Mater. 30 1705171
[35]	Eitel R E, Randall C A, Shrout T R, Rehrig P W, Hackenberger W, Park S E 2001 Jpn. J. Appl. Phys. 40 5999
[36]	Goldschmidt V M, Krystallochemie D G D 1926 Science of Nature 14 477
[37]	Eitel R E, Randall C A, Shrout T R, Park S E 2002 Jpn. J. Appl. Phys. 41 2099
[38]	Iniguez J, Vanderbilt D, Bellaniche L 2003 Phys. Rev. B 67 224107
[39]	Zhang S, Randall C A, Shrout T R 2003 Appl. Phys. Lett. 83 3150
[40]	Zhang S, Eitel R E, Randall C A, Shrout T R 2005 Appl. Phys. Lett. 86 262904
[41]	Chen S, Dong X, Mao C, Cao F 2006 J. Am. Ceram. Soc. 89 3270
[42]	Zou T T, Wang X H, Wang H, Zhong C F, Li L T, Chen I W 2008 Appl. Phys. Lett. 93 192913
[43]	Wang Y, Cai K, Shao T, Zhao Q, Guo D 2015 J. Appl. Phys. 117 164102
[44]	Chen J, Hu Z, Shi H, Li M, Dong S 2012 J. Phys. D: Appl. Phys. 45 465303
[45]	Zhang S, Yu Y, Wu J, Gao X, Huang C, Dong S 2018 J. Alloy. Compd. 731 1140
[46]	Aurivillius B 1949 Ark. Kemi 1 463
[47]	Subbarao E C 1962 J. Phys. Chem. Solids 23 665
[48]	Subbarao E C 1962 J. Am. Ceram. Soc. 45 166
[49]	Takenaka T, Sakata K 1980 Jpn. J. Appl. Phys. 19 31
[50]	Takenaka T, Sakata K 1984 J. Appl. Phys. 55 1092
[51]	Rae A D, Thompson J G, Withers R L 1991 Acta Cryst. B 47 870
[52]	Rae A D, Thompson J G, Withers R L, Willis A C 1990 Acta Cryst. B 46 474
[53]	Withers R L, Thompson J G, Rae A D 1991 J. Solid State Chem. 94 404
[54]	Wang C M, Zhao L, Wang J F, Zhang S J, Shrout T R 2009 Phys. Stat. Sol. (RRL) 3 7
[55]	Ismunandar, Kennedy B J 1999 J. Mater. Chem. 9 541
[56]	Macquart R, Kennedy B J, Kubota Y, Nishibori E, Takata M 2000 Ferroelectrics 248 27
[57]	Hervoches C H, Snedden A, Riggs R, Kilcoyne S H, Manuel P, Lightfoot P 2002 J. Solid State Chem. 164 280
[58]	Borg S, Svensson G 2001 J. Solid State Chem. 157 160
[59]	Ismunandar, Kamiyama T, Hoshikawa A, Zhou Q, Kennedy B J, Kubota Y, Kato K 2004 J. Solid State Chem. 177 4188
[60]	de Araujo C A P, Cuchiaro J D, McMillan L D, Scott M C, Scott J F 1995 Nature 374 627
[61]	Auciello O, Foster C M, Ramesh R 1998 Annu. Rev. Mater. Sci. 28 501
[62]	Auciello O, Scott J F, Ramesh R 1998 Phys. Today 51 22
[63]	Du X, Chen I W 1998 J. Am. Ceram. Soc. 81 3253
[64]	Du X, Chen I W 1998 J. Am. Ceram. Soc. 81 3260
[65]	Du X, Chen I W 1998 J. Am. Ceram. Soc. 81 3265
[66]	Ganpule C S, Stanishevsky A, Aggarwal S, Melngailis J, Williams E, Ramesh R, Joshi V, de Araujo C P 1999 Appl. Phys. Lett. 75 3874
[67]	Chon U, Kim K B, Jang H M, Yi G C 2001 Appl. Phys. Lett. 79 3137
[68]	Ding Y, Liu J S, Qin H X, Zhu J S, Wang Y N 2001 Appl. Phys. Lett. 78 4175
[69]	Kimura M, Sawada T, Ando A, Sakabe Y 1999 Jpn. J. Appl. Phys. 38 5557
[70]	Takeuchi T, Tani T, Saito Y 1999 Jpn. J. Appl. Phys. 38 5553
[71]	Hong S H, Trolier McKinstry S, Messing G L 2000 J. Am. Ceram. Soc. 83 113
[72]	Pardo L, Castro A, Millan P, Alemany C, Jimenez R, Jimenez B 2000 Acta Mater. 48 2421
[73]	Yan H, Li C G, Zhou J G, Zhu W M, He L X, Song Y X 2000 Jpn. J. Appl. Phys. 39 6339
[74]	Mao X, Wang W, Chen X, Lu Y 2009 Appl. Phys. Lett. 95 082901
[75]	Bai W, Gao Y Q, Zhu J Y, Meng X J, Lin T, Yang J, Zhu Z Q, Chu J H 2011 J. Appl. Phys. 109 064901
[76]	Wu F, Chen Z, Chen Y B, Zhang S, Zhou J, Zhu Y, Chen Y 2011 Appl. Phys. Lett. 98 212501
[77]	Birenbaum A Y, Ederer C 2014 Phys. Rev. B 90 214109
[78]	Zhao H, Kimura H, Cheng Z, Osada M, Wang J, Wang X, Dou S, Liu Y, Yu J, Matsumoto T, Tohei T, Shibata N, Ikuhara Y 2014 Sci. Rep. 4 5255
[79]	Wang C M, Wang J F 2006 Appl. Phys. Lett. 89 202905
[80]	Wang C M, Wang J F, Zhang S J, Shrout T R 2009 J. Appl. Phys. 105 094110
[81]	Wang Q, Wang C M, Wang J F, Zhang S 2016 Ceram. Int. 42 6993
[82]	Wang C M, Zhang S J, Wang J F, Zhao M L, Wang C L 2009 Mater. Chem. Phys. 118 21
[83]	Sun L, Feng C, Chen L, Huang S 2007 J. Am. Ceram. Soc. 90 3875
[84]	Zhang H, Yan H, Reece M J 2010 J. Appl. Phys. 108 014109
[85]	Jiang X P, Yang Q, Zhou S L, Chen C, Chen Y, Tu N, Yu Z D 2011 J. Am. Ceram. Soc. 94 1109
[86]	Chen Y, Liang D, Wang Q, Zhu J 2014 J. Appl. Phys. 116 074108
[87]	Wang Q, Liang Y, Wang C M, Wang C L, Zhao M L 2015 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA) Jinan, October 30-November 2, 2015 p70
[88]	Zhao T L, Wang C M, Wang C L, Wang Y M, Dong S 2015 Mat. Sci. Eng. B 201 51
[89]	Cao Z P, Wang C M, Zhao T L, Yu S L, Wu H Z, Wang Y M, Wang Q, Liang Y, Wei Y N, Zhang Y, Liu Y, Tang X S 2015 Ceram. Int. 41 13974
[90]	Fang P, Fan H, Xi Z, Chen W 2012 Solid State Commun. 152 979
[91]	Wang C M, Zhao L, Liu Y, Withers R L, Zhang S, Wang Q 2016 Ceram. Int. 42 4268
[92]	Wang C M, Wang J F 2008 J. Am. Ceram. Soc. 91 918
[93]	Wang C M, Wang J F, Zhang S J, Shrout T R 2009 Phys. Stat. Sol. (RRL) 3 49
[94]	Cai K, Huang C, Guo D 2017 J. Phys. D: Appl. Phys. 50 155302
[95]	Shen Z Y, Luo W Q, Tang Y, Zhang S, Li Y 2016 Ceram. Int. 42 7868
[96]	Wang Q, Cao Z P, Wang C M, Fu Q W, Yin D F, Tian H H 2016 J. Alloys Compd. 674 37
[97]	Cao Z P, Wang C M, Lau K, Wang Q, Fu Q W, Tian H H, Yin D F 2016 Ceram. Int. 42 11619
[98]	Guo Z L, Wang C M, Zhao T L, Yu S L, Cao Z P 2013 Mater. Chem. Phys. 140 260
[99]	Magneli A 1949 Arkiv for Kemi 1 213
[100]	Jamieson P B, Abrahams S C, Bernstein J L 1969 J. Chem. Phys. 50 4352
[101]	Hussain A, Gruehn R, Ruseher C H 1979 J. Alloys Compd. 246 51
[102]	Skokan M R, Moulton W G, Morris R C 1978 B. Am. Phys. Soc. 23 231
[103]	Franeombe M H 1960 Acta Crystallogr. 13 131
[104]	Sleight A W 1966 Acta Chem. Scand. 20 1102
[105]	Stennett M C, Reaney I M, Miles G C, Woodward D I, West A R, Kirk C A, Levin I 2007 J. Appl. Phys. 101 104114
[106]	Chen X M, Yuan Y, Sun Y H 2005 J. Appl. Phys. 97 074108
[107]	Zhu X L, Wu S Y, Chen X M 2007 Appl. Phy. Lett. 91 162906
[108]	Bai Y 2011 M. S. Thesis (Hangzhou: Zhejiang University) (in Chinese)[白阳 2011 硕士学位论文(杭州: 浙江大学)]
[109]	Tizeff. https://upload.wikimedia.org/wikipedia/commons/thumb/a/a3/PbNb2O6.png/116px-PbNb2O6.png[2018-09-16]
[110]	Li M Y, Cheng L, Gu X Y, Zhang Y P, Liao R H 2006 Journal of Ceramics 27 3 (in Chinese)[李明月, 程亮, 顾幸勇, 张玉平, 廖润华 2006 陶瓷学报 27 3]
[111]	Cai K, Jiang F, Deng P, Ma J, Guo D 2015 J. Am. Ceram. Soc. 98 3165
[112]	Luan G D, Zhang J D, Wang R Q 2005 Piezoelectric Transducer and Transducer Array (Beijing: Peking University Press) p93 (in Chinese)[栾桂冬, 张金铎, 王仁乾 2005 压电换能器和换能器阵(北京: 北京大学出版社) 第93页]
[113]	Kenji U 2010 Ferroelectric Devices (New York: Taylor Francis Group CRC Press) p171
[114]	Zhang P L, Zhong W L 1996 Piezoelectric Materials and Device Physics (Jinan: Shandong Science Technology Press) p113 (in Chinese)[张沛霖, 钟维烈 1996 压电材料与器件物理 (济南: 山东科学技术出版社) 第113页]
[115]	Qin Z K 1980 Piezoelectric Quartz Crystal (Beijing: National Defense Industry Press) p100 (in Chinese)[秦自楷1980 压电石英晶体(北京: 国防工业出版社) 第100页]
[116]	Shekhar P C, Schreuer J 2012 J. Appl. Phys. 111 13516
[117]	Smith R T 2003 J. Appl. Phys. 42 2219
[118]	Krempl P, Schleinzer G, Wallno Fer W 1997 Sensors Actuators A: Physical 61 361
[119]	Sotnikov A V, Schmidt H, Weihnacht M, Smirnova E P, Chemekova T Y, Makarov Y N 2010 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57 808
[120]	Riekkinen T, Nurmela A, Molarius J 2009 Thin Solid Films 517 6588
[121]	Bohm J, Chilla E, Flannery C, Frohlich H J, Hauke T, Heimann R B, Hengst M, Straube U 2000 J. Cryst. Growth 216 293
[122]	Yu F P 2011 Ph. D. Dissertation (Jinan: Shandong University) (in Chinese)[于法鹏 2011 博士学位论文(济南: 山东大学)]
[123]	Kyawthetlatt (Nus). https://cpb-us-w2.wpmucdn.com/blog.nus.edu.sg/dist/3/3243/files/2013/08/image2-1qaf3mb.png[2013-08]
[124]	Gong M X 2001 International Electronic Elements 26 9 (in Chinese)[龚美霞 2001 国外电子元器件 26 9]
[125]	Helen Brand. https://www.iycr2014.org/learn/crystallography365/articles/20141209[2014-02-09]
[126]	London D 2011 Can. Mineral. 49 117
[127]	Somma C, Reimann K, Flytzanis C, Elsaesser T, Woerner M 2014 Phys. Rev. Lett. 112 146602
[128]	Solid State. https://commons.wikimedia.org/wiki/File:LiNbO3.png[2008-04-15]
[129]	Carruthers J R, Peterson G E, Grasso M, Bridenbaugh P M 1971 J. Appl. Phys. 42 1846
[130]	Kitamura K 1999 J. Cryst. Growth 197 889
[131]	Malovichko G I, Grachev V G, Yurchenko L P, Proshko V Y, Kokanyan E P, Gabrielyan V T 1992 Physica Status Solidi 133 K29
[132]	Malovichko G I, Grachev V G, Kokanyan E P, Schirmer O F, Betzler K, Gather B, Jermann F, Klauer S, Schlarb U, Whlecke M 1993 Appl. Phys. A 56 103
[133]	Jundt D H, Fejer M M, Byer R L 1990 IEEE J. Quantum Elect. 26 135
[134]	Bordui P F, Jundt D H, Standifer E M, Norwood R G, Sawin R L, Galipeau J D 1999 J. Appl. Phys. 85 3766
[135]	Haines J, Cambon O, Prudhomme N, Fraysse G, Keen D A, Chapon L C, Tucker M G 2006 Phys. Rev. B 73 10
[136]	Philippot E, Ibanez A, Goiffon A, Cochez M, Zarka A, Capelle B, Schwartzel J, Dtaint J 1993 J. Cryst. Growth 130 195
[137]	Li J, Liang X, Xu G, Zhao H, Wang J 2007 Piezoelectrics and Acoustooptics 29 695
[138]	Krempl P, Schleinzer G, Wallno Fer W 1997 Sensors Actuators A: Physical 61 361
[139]	Fachberger R, Bruckner G, Knoll G, Hauser R, Biniasch J, Reindl L 2004 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51 1427
[140]	Sotnikov A V, Schmidt H, Weihnacht M, Smirnova E P, Chemekova T Y, Makarov Y N 2010 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57 808
[141]	Zhao C L, Song B, Zhang X H, Han J C 2012 Materials Review A: Review 26 11 (in Chinese)[赵超亮, 宋波, 张幸红, 韩杰才 2012 材料导报A: 综述篇 26 11]
[142]	Oreshko A P, Ovchinnikova E N, Rogalev A, Wilhelm F, Mill B V, Dmitrienko V 2018 J. Synchrotron Rad. 25 1
[143]	Dou R, Liu W, Zhang Q, Zhang Q, Ding S, Shi Z, Sun D, Wang J 2017 Appl. Phys. A 23 1
[144]	Sato J, Takeda H, Morikoshi H, Shimamura K, Rudolph P, Fukuda T 1998 J. Cryst. Growth 191 746
[145]	NaKaoa H, Nishida M, Shikida T, Shimisu H, Takeda H, Shiosaki T 2006 J. Alloy. Compd. 408-412 582
[146]	Kumatoriya M, Sato H, Nakanishi J, Fujii T, Kadota M, Sakabe Y 2001 J. Cryst. Growth 229 289
[147]	Zhang S, Yoshikawa A, Kamada K, Frantz E, Xia R, Snyder D W, Fukuda T, Shrout T R 2008 Solid State Commun. 148 213
[148]	Zhang S, Kong H, Xia R, Zheng Y, Xin J, Shrout T R 2010 Solid State Commun. 150 435
[149]	Xiong K, Zheng Y, Tu X, Zhang S, Kong H, Shi E 2014 J. Cryst. Growth 401 820
[150]	Zhang S, Zheng Y, Kong H, Xin J, Frantz E, Shrout T R 2009 J. Appl. Phys. 105 114107
[151]	Douchet G, Sthal F, Bigler E, Bourquin R 2010 Solid State Sci. 12 325
[152]	le Traon O, Masson S, Chartier C, Janiaud D 2010 Solid State Sci. 12 318
[153]	Tortissier G, Blanc L, Tetelin A, Lachaud J, Benoit M, Condra V, Dejous C, Rebire D 2009 Procedia Chemistry 1 963
[154]	Zhong D, Teng B, Kong W, Ji S, Zhang S, Li J, Cao L, Jing H, He L 2017 J. Alloy. Compd. 692 413
[155]	Fei Y, Chai B H T, Ebbers C A, Liao Z M, Schaffers K I, Thelin P 2006 J. Cryst. Growth 290 301
[156]	Zhang S, Yu F, Xia R, Fei Y, Frantz E, Zhao X, Yuan D, Chai B H T, Snyder D, Shrout T R 2011 J. Cryst. Growth 318 884
[157]	Takeda H, Nakao H, Izukawa S, Shimizu H, Nishida T, Okamura S, Shiosaki T 2006 J. Alloy. Compd. 408-412 474
[158]	Zhang S, Fei Y, Chai B H T, Frantz E, Snyder D W, Jiang X, Shrout T R 2008 Appl. Phys. Lett. 92 202905
[159]	Yu F, Zhang S, Zhao X, Yuan D, Wang Q, Shrout T R 2010 Physica Status Solidi: Rapid Research Letters 4 103
[160]	Yu F, Zhang S, Zhao X, Yuan D, Wang Q, Shrout T R 2011 Physica Status Solidi: Rapid Research Letters 5 47
[161]	Shen C, Zhang S, Cao W, Cong H, Yu H, Wang J, Zhang H 2015 J. Appl. Phys. 117 64106
[162]	Shen C, Zhang S, Wang D, Xu T, Yu H, Cao W, Wang J, Zhang H 2015 Crystengcomm 17 1791
[163]	Takeda H, Hagiwara M, Noguchi H, Hoshina T, Takahashi T, Kodama N, Tsurumi T 2013 Appl. Phys. Lett. 102 242907
[164]	Zhang Y, Yin X, Yu H, Cong H, Zhang H, Wang J, Boughton R I 2012 Cryst. Growth Des. 12 622
[165]	Shen C, Zhang H, Cong H, Yu H, Wang J, Zhang S 2014 J. Appl. Phys. 116 44106
[166]	Chen J, Liu G, Li X, Chen Z, Dong S X 2013 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 60 446
[167]	Shi H, Chen J, Liu G, Xiao W, Dong S X 2013 Appl. Phys. Lett. 102 242904
[168]	Chen J, Li X, Liu G, Chen Z, Dong S X 2012 Appl. Phys. Lett. 101 012909
[169]	Li X, Chen J, Chen Z, Dong S X 2012 Appl. Phys. Lett. 101 072902
[170]	Chen J, Chen Z, Li X, Dong S X 2013 Appl. Phys. Lett. 102 052902
[171]	Stewart Sherrit. https://www.techbriefs.com/component/content/article/3-ntb/tech-briefs/mechanics-and-machinery/9440[2011-03-01]
[172]	Bar-Cohen Y 2014 High Temperature Materials and Mechanisms (New York: CRC Press/Taylor and Francis group) pp427-465
[173]	Bao X, Scott J, Boudreau K, Bar-Cohen Y, Sherrit S, Badescu M, Zhang S, Shrout T R 2009 SPIE 2009 7292 72922B
[174]	Wu J, Shi H, Zhao T, Yu Y, Dong S X 2016 Adv. Funct. Mater. 26 7186
[175]	Wu J, Chen X, Chu Z, Shi W, Yu Y, Dong S X 2016 Appl. Phys. Lett. 109 173901
[176]	Parks D, Zhang S, Tittmann B 2013 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 60 1010
[177]	Johnson J A, Kim K, Zhang S, Wu D, Jiang X 2014 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 61 805
[178]	Johnson J A, Kim K, Zhang S, Di Wu, Jiang X 2013 Proceedings of Spie. 8694 869428
[179]	Kim K, Zhang S, Salazar G, Jiang X 2012 Sensors and Actuators A: Physical 178 40
[180]	Kim K, Zhang S, Huang W, Yu F, Jiang X 2011 J. Appl. Phys. 109 126103
[181]	Zhang S, Jiang X, Lapsley M, Moses P, Shrout T R 2010 Appl. Phys. Lett. 96 13506
[182]	Hamidon M, Skarda V, White N, Krispel F, Krempl P, Binhack M, Buff W 2006 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53 2465
[183]	Pereira da Cunha M, Lad R J, Moonlight T, Moulzolf S, Canabal A, Behanan R, Davulis P M, Frankel D, Bernhardt G, Pollard T, McCann D F 2011 IEEE Sensors Proceedings 2011 p614
[184]	RFSAW Inc., https://rfsaw.com/[2018-09-16]
[185]	Aubert T, Bardong J, Legrani O, Elmazria O, Badreddine Assouar M, Bruckner G, Talbi A 2013 J. Appl. Phys. 114 14505
[186]	Fritze H, Tuller H L, Seh H, Borchardt G 2001 Sensors and Actuators B 76 103
[187]	Fritze H, Seh H, Tuller H L, Borchardt G 2001 J. Eur. Ceram. Soc. 21 1473
[188]	Takeda H, Hagiwara M, Noguchi H, Hoshina T, Takahashi T, Kodama N, Tsurumi T 2013 Appl. Phys. Lett. 102 242907
[189]	Zhang S, Yu F 2011 J. Am. Ceram. Soc. 94 3153
[190]	Huang C, Cai K, Wang Y, Bai Y, Guo D 2018 J. Mater. Chem. C 6 1433
[191]	Wang Y, Cai K, Jiang F, Zhang J, Guo D 2014 Sensor Actuat A: Physical 216 335
[192]	Zhang S, Fei Y, Frantz E, Snyder D W, Chai B H, Shrout T R 2008 IEEE Trans. Ultrason. Ferroelectr. Freq. Control. 55 2703

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Vol. 67, Issue 20 - 2018-10-20

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