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Silicon photonic switch is recognized as a cost-effective optical switching technology because it has many applications in long-haul telecommunication networks, short-reach data center and high-performance computing. In this paper, the research progress of various silicon photonic switch technologies is reviewed systematically. Firstly, the principles of three kinds of switch technologies including Mach-Zehnder interferometer (thermo-optic and carrier-injection types), micro-ring resonator (thermo-optic and carrier-injection types) and micro-electro-mechanical-system actuated waveguide coupler (electrostatic actuated type) are introduced. The switch technologies with the state-of-the-art insertion loss, crosstalk, switch time, footprint and power consumption are summarized and compared. Then the recent demonstrations of large-port silicon photonic matrix based on the above switch technologies are discussed. In this paper, we also investigate the key technologies such as topological architecture, passive components and optoelectronic packaging, which affect the performance of large-port optical switch matrix. Specifically, we study the scalability of various topologies, low-loss/broadband waveguide components, high-density optical/electrical packaging and control interface to improve the overall performance of the silicon photonic switch matrix. Finally, we discuss the critical technical challenges that might hamper the commercialization of silicon photonic switches and envision their future.
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Keywords:
- optical switch /
- silicon photonics /
- optical interconnect /
- photonic integration
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图 1 (a) MZI型2 × 2光开关单元结构示意图. 硅基波导开关相移器的横截面图(b) 金属薄膜热电极热光相移器; (c)掺杂波导热光相移器; (d) 空气隔离层的热光相移器; (e) 注入载流子型电光相移器
Figure 1. (a) Schematic of 2 × 2 MZI switch cell. Cross-sections of waveguide phase shifters: (b) Thermo-optic phase shifter using a metal heater; (c) thermo-optic phase shifter using a doped resistive heater; (d) suspended thermo-optic phase shifter using a metal heater (e) carrier injection phase shifter
表 1 业界MZI型硅基波导光开关的代表成果
Table 1. Comparison table of MZI optical waveguide switch cells
参考文献 年份 研究机构 相移器类型 相移器长/μm 开关时间 功耗/mW 损耗/dB 串扰/dB [18] 2015 IBM 电光PIN 250 4 ns 1 1 –23 [19] 2013 CAS 电光PIN 400 – – – –31 [20] 2011 IME 热光TiN 1000 144 μs 0.49 0.3 –23 [21] 2010 Kotura 电光PIN 4000 6 ns 0.6 3.2 –16 [22] 2015 UBC 热光TiN 4270 780 μs 0.05 3.3 –26 [23] 2013 MIT 热光掺杂硅 ~10 2.4 μs 12.7 0.5 –20 [24] 2016 ZJU 热光TiN 20 – – – –20 [25] 2014 AIST 热光TiN ~150 10 μs 30 0.5 –50 [26] 2016 IBM 电光PIN 250 4 ns – 2 –34.5 [27] 2016 Huawei 热光TiN 250 1340/70 μs 0.5/10 0.5 –22 表 2 业界MRR型开关的代表成果
Table 2. Comparison table of MRR optical waveguide switch cells
表 3 业界MEMS驱动波导型开关的代表成果
Table 3. Comparison table of MEMS optical waveguide switch cells
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