Reivew of silicon photonic switches

Tu Xin; Chen Zhen-Min; Fu Hong-Yan

doi:10.7498/aps.68.20190011

Abstract

Silicon photonic switch is recognized as a cost-effective optical switching technology because it has many applications in long-haul telecommunication networks, short-reach data center and high-performance computing. In this paper, the research progress of various silicon photonic switch technologies is reviewed systematically. Firstly, the principles of three kinds of switch technologies including Mach-Zehnder interferometer (thermo-optic and carrier-injection types), micro-ring resonator (thermo-optic and carrier-injection types) and micro-electro-mechanical-system actuated waveguide coupler (electrostatic actuated type) are introduced. The switch technologies with the state-of-the-art insertion loss, crosstalk, switch time, footprint and power consumption are summarized and compared. Then the recent demonstrations of large-port silicon photonic matrix based on the above switch technologies are discussed. In this paper, we also investigate the key technologies such as topological architecture, passive components and optoelectronic packaging, which affect the performance of large-port optical switch matrix. Specifically, we study the scalability of various topologies, low-loss/broadband waveguide components, high-density optical/electrical packaging and control interface to improve the overall performance of the silicon photonic switch matrix. Finally, we discuss the critical technical challenges that might hamper the commercialization of silicon photonic switches and envision their future.

Keywords:

Authors and contacts

Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China

Corresponding author: Fu Hong-Yan, hyfu@sz.tsinghua.edu.cn

Funds: Project supported by the Shenzhen Technology and Innovation Council, China (Grant Nos. JCYJ20170818094001391, JCYJ20180507183815699, KQJSCX20170727163424873) and Tsinghua-Berkeley Shenzhen Institute (TBSI) Faculty Start-up Fund, China.

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References

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Cited By

图 1 (a) MZI型2 × 2光开关单元结构示意图. 硅基波导开关相移器的横截面图(b) 金属薄膜热电极热光相移器; (c)掺杂波导热光相移器; (d) 空气隔离层的热光相移器; (e) 注入载流子型电光相移器

Figure 1. (a) Schematic of 2 × 2 MZI switch cell. Cross-sections of waveguide phase shifters: (b) Thermo-optic phase shifter using a metal heater; (c) thermo-optic phase shifter using a doped resistive heater; (d) suspended thermo-optic phase shifter using a metal heater (e) carrier injection phase shifter

DownLoad: Full-Size Img PowerPoint

图 2 (a) MZI型光开关单元结构图示意图; (b) 波长开关路径

Figure 2. (a) Schematic of a MRR switch cell; (b) switching paths

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图 3 (a) Hybrid Dilated Benes架构的拓扑结构^[67]; (b)开关单元的波长受限路由规则

Figure 3. (a) Topology of 16 × 16 Hybrid Dilated Benes^[67]; (b) wavelength constrained routing rules of the switch cell

DownLoad: Full-Size Img PowerPoint

图 4 几种不同拓扑架构的开关矩阵的(a)总开关单元数和(b)开关级数

Figure 4. Switch matrix of different topologies (a) total number of switch cells and (b) total number of matrix stages

DownLoad: Full-Size Img PowerPoint

图 5 无源器件　(a)平面交叉波导^[72]; (b)立体交叉波导^[73]; (c)转接波导^[74]; (d)弯曲波导^[75]

Figure 5. Passive components: (a) In-plane waveguide crossing^[72]; (b) 3D waveguide crossing^[73]; (c) transition waveguide^[74]; (d) bend waveguide^[75]

DownLoad: Full-Size Img PowerPoint

表 1 业界MZI型硅基波导光开关的代表成果

Table 1. Comparison table of MZI optical waveguide switch cells

参考文献	年份	研究机构	相移器类型	相移器长/μm	开关时间	功耗/mW	损耗/dB	串扰/dB
[18]	2015	IBM	电光PIN	250	4 ns	1	1	–23
[19]	2013	CAS	电光PIN	400	–	–	–	–31
[20]	2011	IME	热光TiN	1000	144 μs	0.49	0.3	–23
[21]	2010	Kotura	电光PIN	4000	6 ns	0.6	3.2	–16
[22]	2015	UBC	热光TiN	4270	780 μs	0.05	3.3	–26
[23]	2013	MIT	热光掺杂硅	～10	2.4 μs	12.7	0.5	–20
[24]	2016	ZJU	热光TiN	20	–	–	–	–20
[25]	2014	AIST	热光TiN	～150	10 μs	30	0.5	–50
[26]	2016	IBM	电光PIN	250	4 ns	–	2	–34.5
[27]	2016	Huawei	热光TiN	250	1340/70 μs	0.5/10	0.5	–22

DownLoad: CSV

表 2 业界MRR型开关的代表成果

Table 2. Comparison table of MRR optical waveguide switch cells

参考文献	年份	研究机构	损耗/dB	串扰/dB	功耗/mW	开关时间	带宽/nm
[30]	2011	Columbia U	——	–12	——	2.78 ns	0.56
[31]	2009	HKUST	1.64	–11	～0.1	1.3 ns	0.45
[32]	2012	IME	4.3	–10	37	1 ns	0.8
[33]	2014	TU/e	2	–20	120	17 μs	0.8
[34]	2009	Cornell U	2	–9.8	17.4	7 ns	0.48
[35]	2014	SJTU	3.4	–20	0.69(电光) 2.3(热光)	414 ps	0.48

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表 3 业界MEMS驱动波导型开关的代表成果

Table 3. Comparison table of MEMS optical waveguide switch cells

研究机构	UC Berkeley^[45]	Tohoku U^[46]	Tohoku U^[47]	Aeponyx Inc^[48]
驱动电压/V	42	26	28.2	118
开关时间/μs	0.91	18	——	300
插入损耗/dB	0.47	1	2.6	14.8
带宽/nm	300	——	0.5	宽带
串扰/dB	–60	–17	–32.9	–40

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表 4 不同的光开关引擎在保持开状态时的功耗

Table 4. Comparison table of the power consumption of the switch engines at ON state

开关种类	MZI型		MRR型		MEM驱动波导型
开关种类	电光	热光	电光	热光	垂直耦合	平面耦合	端面耦合
保持开状态的功耗/mW	0.6–1	0.05–30	0.7–37	17.4–120	0	0	0
文献	[18, 21, 26]	[22, 23, 25, 27]	[32, 35]	[33, 34]	[45]	[46, 47]	[48]

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[1]	Basch E B, Egorov R, Gringeri S, Elby S 2006 IEEE J. Sel. Top. Quantum Electron. 12 615 Google Scholar
[2]	Jensen R, Lord A, Parsons N 2010 In Proceedings of 2010 European Conference on Optical Communication Turino, Italy, September 19−23, 2010 Mo.2.D.2
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[4]	Farrington N P G, Radhakrishnan S, Bazzaz H H, Subramanya V, Fainman Y, Papen G, Vahdat A 2011 ACM SIGCOMM Computer Communication Review 41 339
[5]	Alan Benner D M K, Pepeljugoski P K, Budd R A, Hougham G, Fasano B V, Marston K, Bagheri H, Seminaro E J, Xu H, Meadowcroft D, Fields M H, McColloch L, Robinson M, Miller F W, Kaneshiro R, Granger R, Childers D, Childers E 2010 In Proceedings of 2010 Optical Fiber Communications Conference San Diego, USA, March 21-25, 2010 OTuH1
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[7]	Wu M C, Solgaard O, Ford J E 2006 J. Lightwave Technol. 24 4433 Google Scholar
[8]	Frisken S, Baxter G, Abakoumov D, Hao Z, Clarke I, Poole S 2011 In Proceedings of 2011 Optical Fiber Communications Conference Los Angeles, USA, March 6-10, 2011 OTuM3
[9]	Chiba A, Kawanishi T, Sakamoto T, Higuma K, Izutsu M 2007 In Proceedings of 2007 Conference on Photonics in Switching San Francisco, USA, August 19-22, 2007 TuB1.4
[10]	Tanaka S, Jeong S, Yamazaki S, Uetake A, Tomabechi S, Ekawa M, Morito K 2009 IEEE J. Sel. Top. Quantum Electron. 45 1155 Google Scholar
[11]	Earnshaw M P, Soole J B D, Cappuzzo M, Gomez L, Laskowski E, Paunescu A 2003 IEEE Photonics Technol. Lett. 15 810 Google Scholar
[12]	Cheng Q, Bahadori M, Rumley S, Bergman K 2017 In Proceedings of 2017 IEEE Optical Interconnects Conference Santa Fe, USA, June 5-7, 2017 41
[13]	Bowers J E, Liu A Y 2017 In Proceedings of 2017 Optical Fiber Communications Conference Los Angeles, USA, March 19-23, 2017 M2B.4
[14]	Komma J, Schwarz C, Hofmann G, Heinert D, Nawrodt R 2012 Appl. Phys. Lett. 101 041905 Google Scholar
[15]	Masood A, Pantouvaki M, Lepage G, Verheyen P, Campenhout J V, Absil P, Thourhout D V, Bogaerts W 2013 In Proceedings of 2013 International Conference on Group IV Photonics Seoul, South Korea, August 28-30, 2013 ThC2
[16]	Soref R, Bennett B 1987 IEEE J. Quantum Electron. 23 123 Google Scholar
[17]	Nedeljkovic M, Soref R, Mashanovich G Z 2011 IEEE Photonics J. 3 1171 Google Scholar
[18]	Dupuis N, Lee B G, Rylyakov A V, Kuchta D M, Baks C W, Orcutt J S, Gill D M, Green W M J, Schow C L 2015 J. Lightwave Technol. 33 3597 Google Scholar
[19]	Xing J, Li Z, Yu Y, Yu J 2013 Opt. Lett. 38 4774 Google Scholar
[20]	Fang Q, Song J F, Liow T, Cai H, Yu M B, Lo G Q, Kwong D 2011 IEEE Photonics Technol. Lett. 23 525 Google Scholar
[21]	Dong P, Liao S, Liang H, Shafiiha R, Feng D, Li G, Zheng X, Krishnamoorthy A V, Asghari M 2010 Opt. Express 18 25225 Google Scholar
[22]	Lu Z, Murray K, Jayatilleka H, Chrostowski L 2015 IEEE Photonics Technol. Lett. 27 2319 Google Scholar
[23]	Watts M R, Sun J, DeRose C, Trotter D C, Young R W, Nielson G N 2013 Opt. Lett. 38 733 Google Scholar
[24]	Chen S, Shi Y, He S, Dai D 2016 Opt. Lett. 41 836 Google Scholar
[25]	Suzuki K, Cong G, Tanizawa K, Kim S H, Ikeda K, Namiki S, Kawashima H 2015 Opt. Express 23 9086 Google Scholar
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[27]	Celo D, Goodwill D J, Jiang J, Dumais P, Li M, Bernier E 2016 In Proceedings of 2016 Optical Interconnects Conference San Diego, USA, May 9-11, 2016 TuD3
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