Progress of radiation effects of silicon photonics devices

Zhou Yue; Hu Zhi-Yuan; Bi Da-Wei; Wu Ai-Min

doi:10.7498/aps.68.20190543

Abstract

Silicon photonics is a fundamental technology, which has great potential applications in optical interconnection for telecom, datacom, and high performance computers, as well as in bio-photonics. Currently considered are the photonics integrated circuits that are able to work in harsh environments such as high energy equipment and future space systems including satellites, space stations and spacecraft. The understanding of the radiation effects of the photonics devices is critical for fabricating radiation hardened photonic integrate chips and maintaining the performance of the devices and the systems. In this paper, the recent progress of the radiation effects of silicon photonic components is summarized. The effects of the high energy particles that possibly degrade the performance of the device are explained, and the response of the passive and active device under radiation are reviewed comprehensively, including waveguides, ring resonators, modulators, detectors, lasers and optical fibers and so on. For passive devices, radiation-induced effects include accelerated-oxidation of the structures, radiation-generated lattice defects, and amorphous densification or compaction in the optical materials. The effective refractive index of the passive device may change consequently, leading the working frequency to shift, the optical confinement to decrease, and the optical power to leak, which accounts for the extra loss or other performance degradation behaviors. For photodetectors and lasers, radiation-induced displacement damage will be dominant. The induced point defects localized in the silicon layer bring about deep level in the forbidden band, acting as generation-recombination centers or trap centers of tunneling effect, which will compensate for either donor or acceptor levels, degrading the response of these optoelectronic device significantly. The plasma dispersion effect is the mainstream approach to building the silicon electro-optic modulators, which will suffer ionization damage in the high energy particle environment, because the interface-trapped hole caused by ionizing radiation reduces the carrier concentration in the depletion region and even induces the pinch-off of the p-doped side of the modulator, which may result in device failure. To improve the radiation hardness of the silicon photonic device, the passivation of the surface, optimization of the waveguide shape, and the choice of appropriate thickness of the buried oxide layer are possible solutions, and more effective approaches are still to be developed.

Keywords:

Authors and contacts

1.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Wu Ai-Min, wuaimin@mail.sim.ac.cn

Funds: Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Frant No. 2017ZX02315004-002-003) and the Major Research and Development Project of the Ministry of Science and Technology of China (Grant No. 2016YFE0130000)

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References

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Cited By

图 1 光子能量和原子序数与三种效应的关系

Figure 1. Relationships between photon energy, atomic number and three effects.

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图 2 硅光系统的信息传输过程

Figure 2. Information transmission process of silicon optical system.

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图 3 微环谐振器的结构示意图

Figure 3. Schematic diagram of micro ring resonator.

DownLoad: Full-Size Img PowerPoint

图 4 有效折射率与γ射线的累积剂量的关系　(a) a-Si谐振器; (b) SiN_x谐振器^[25]

Figure 4. Dependences of effective index changes on cumulative gamma radiation dose in (a) a-Si reso nators and (b) SiN_x devices, inferred from optical resonator measurements^[25].

DownLoad: Full-Size Img PowerPoint

图 5 MZM的示意图^[47]

Figure 5. Schematic diagram of MZM^[47].

DownLoad: Full-Size Img PowerPoint

[1]	王兴军, 苏昭棠, 周治平 2015 中国科学: 物理学力学天文学 45 15 Wang X J, Su Z T, Zhou Z P 2015 Sci. China: Phys. Mech. Astron. 45 15
[2]	Dai L H, Bi D W, Zhang Z X, Xie X, Hu Z Y, Huang H X, Zou S C 2018 Chin. Phys. Lett. 35 056101 Google Scholar
[3]	Dai L H, Bi D W, Hu Z Y, Liu X N, Zhang M Y, Zhang Z X, Zou S C 2018 Chin. Phys. B 27 048503 Google Scholar
[4]	张正选, 邹世昌 2017 科学通报 62 1004 Zhang Z X, Zou S C 2017 Chin. Sci. Bull. 62 1004
[5]	Johnston A H 2000 the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application Tsukuba, Japan, October 11–13, 2000 p1
[6]	Johnston A H 2013 IEEE Trans. Nucl. Sci. 60 2054 Google Scholar
[7]	Seif El Nasr-Storey S, Detraz S, Olantera L, Sigaud C, Soos C, Troska J, Vasey F 2013 Topical Workshop on Electronics for Particle Physics Perugia, Italy, September 23–27, 2013 pC12040
[8]	Henschel H, Kohn O, Weinand U 2002 IEEE Trans. Nucl. Sci. 49 1432 Google Scholar
[9]	Sporea D, Agnello S, Gelardi F M https://www.intechopen.com/books/frontiers-in-guided-wave-optics-and-optoelectronics/irradiation-effects-in-optical-fibers [2019-3-7]
[10]	Sporea D, Sporea A http://www.intechopen.com/embed/radiation-effects-in-materials/radiation-effects-in-optical-materials-and-photonic-devices [2019-3-7]
[11]	Girard S, Baggio J, Bisutti J 2006 IEEE Trans. Nucl. Sci. 53 3750 Google Scholar
[12]	Uffelen V M, Girard S, Goutaland F, Gusarov A, Brichard B, Berghmans F 2004 IEEE Trans. Nucl. Sci. 51 2763 Google Scholar
[13]	Wyllie K, Baron S, Bonacini S, Çobanoğlu Ö, Faccio F, Feger S, Francisco R, Gui P, Li J, Marchioro A, Moreira P, Paillard C, Porreta D 2012 Proceedings of the 2nd International Conference on Technology and Instrumentation in Particle Physics Chicago, IL, USA, Jun 9–14, 2011 p1561
[14]	Xiang A, Gong D, Hou S, Huffman T, Kwan S, Liu K, Liu T, Prosser A, Soos C, Su D, Teng P, Troska J, Vasey F, Weidberg T, Ye J 2012 Proceedings of the 2nd International Conference on Technology and Instrumentation in Particle Physics Chicago, IL, USA, Jun 9–14, 2011 p1750
[15]	宋镜明, 郭建华, 王学勤, 胡姝玲 2012 激光与光电子学进展 49 080001 Song J M, Guo J H, Wang X Q, Hu S L 2012 Laser &Optoelectronics Progress 49 080001
[16]	Berghmans F, Brichard B, Fernandez A F, Gusarov A, Uffelen M V, Girard S 2008 An Introduction to Radiation Effects on Optical Components and Fiber Optic Sensors (Dordrecht: Springer Netherlands) pp127–165
[17]	沈自才, 丁义刚 2015 抗辐射设计与辐射效应 (北京: 中国科学技术出版社) 第85页 Shen Z C, Ding Y G 2015 Radiation Protection Design and Radiation Effect (Beijing: China Science And Technology Press) p85 (in Chinese)
[18]	Lai C C, Chang C Y, Wei Y Y, Wang W S 2007 IEEE Photonics Technol. Lett. 19 1002 Google Scholar
[19]	Lai C C, Wei T Y, Chang C Y, Wang W S, Wei Y Y 2008 Appl. Phys. Lett. 92 23303 Google Scholar
[20]	Del’Haye P, Schliesser1 A, Arcizet O, Wilken T, Holzwarth R, Kippenberg T J 2007 Nature Lett. 450 1214 Google Scholar
[21]	任光辉, 陈少武, 曹彤彤 2012 物理学报 61 034215 Google Scholar Ren G H, Chen S W, Cao T T 2012 Acta Phys. Sin. 61 034215 Google Scholar
[22]	曹彤彤, 张利斌, 费永浩, 曹严梅, 雷勋, 陈少武 2013 物理学报 62 194210 Google Scholar Cao T T, Zhang L B, Fei Y H, Cao Y M, Lei X, Chen S W 2013 Acta Phys. Sin. 62 194210 Google Scholar
[23]	Dumon P, Baets R, Kappeler R, Barros D, McKenzie I, Doyle D 2005 Proc. SPIE 5897, Photonics for Space Environments X (San Diego, California, United States: Optics and Photonics) p1
[24]	Bhandaru S, Hu S, Fleetwood M D, Weiss M S 2015 IEEE Trans. Nucl. Sci. 62 323 Google Scholar
[25]	Du Q Y, Huang Y Z, Ogbuu O, Zhang W, Li J Y, Singh V, Agarwal M A, Hu J J 2017 Opt. Lett. 42 587 Google Scholar
[26]	Ahmed Z, Cumberland T L, Klimov N N, Pazos M I, Tosh E R, Fitzgerald R 2018 Sci. Rep. 8 13007 Google Scholar
[27]	Brasch V, Chen Q F, Schiller S, et al. 2014 Opt. Express 25 30786
[28]	Grillanda S, Singh V, Raghunathan V, Morichetti F, Melloni A, Kimerling L, Agarwal M A 2016 Opt. Lett. 41 3053 Google Scholar
[29]	Morichetti F, Grillanda S, Manandhar S, Shutthanandan V, Kimerling L, Melloni A, Agarwal M A 2016 ACS Photonics 3 1569 Google Scholar
[30]	吴金东, 黄舒, 胡海鑫, 丁纲筋, 肖湘杰 2014 汉斯 4 34 Wu J D, Huang S, Hu H X, Ding G J, Xiao X J 2014 Hans 4 34
[31]	Ryckman D J, Reed A R, Weller A R, Fleetwood M D, Weiss M S 2010 J. Appl. Phys. 108 113528 Google Scholar
[32]	Piao F, Oldham G W, Haller E E 2000 J. Non-Cryst. Solids 276 61 Google Scholar
[33]	Leick L, Zenth K, Laurent L C, Koster T, Andersen UA L, Wang L, Larsen H B, Nielsen P L, Mattsson E K 2004 Optical Fiber Communication Conference Los Angeles, USA, February 23–27, 2004 p40
[34]	Worhoff K, Lambeck P V, Driessen A 1999 J. Lightwave Technol. 17 1401 Google Scholar
[35]	沈浩, 李东升, 杨德仁 2015 物理学报 64 204208 Google Scholar Shen H, Li D S, Yang D R 2015 Acta Phys. Sin. 64 204208 Google Scholar
[36]	王智琪 2014 博士学位论文 (上海: 中国科学院大学上海微系统与信息技术研究所) Wang Z Q 2014 Ph. D. Dissertation (Shanghai: Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences) (in Chinese)
[37]	仇超 2013 博士学位论文 (上海: 中国科学院大学上海微系统与信息技术研究所) Qiu C 2013 Ph. D. Dissertation (Shanghai: Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences) (in Chinese)
[38]	Nikolić, D, Vasic A, Fetahovic I, Stanković K, Osmokrović P 2011 Ser. A: Appl. Math. Inform. Mech. 3 27
[39]	Kumar M V, Kumar S, Cheng C, Asokan K, Kumar A, Shobha V, Karanth P S, Krishnaveni S 2017 ECS J. Solid State Sci. Technol. 6 Q132 Google Scholar
[40]	Zeiler M, Seif El Nasr-Storey S, Detraz S, Kraxner A, Olantera L, Scarcella C, Sigaud C, Soos C, Troska J, Vasey F 2017 IEEE Trans. Nucl. Sci. 64 2794 Google Scholar
[41]	Hoffman G B, Gehl B, Martinez N J, Trotter D C, Starbuck A L, Pomerene A, Dallo C M, Hood D, Dodd P E, Swanson S E, Long C M, DeRose C T, Lentine A L 2019 IEEE Trans. Nucl. Sci. 66 801 Google Scholar
[42]	Detection Technology, Inc. http://www.deetee.com [2019-3-7]
[43]	Troska J, Detraz S, Seif El Nasr-Storey S, Stejskal P, Sigaud C, Soos C, Vasey F 2011 IEEE Trans. Nucl. Sci. 58 3103 Google Scholar
[44]	Blansett L E, Serkland, K D, Cich J M, Geib M K, Peake M G, Fleming M R, Wrobel L D, Wrobel F T 2008 Sandia Report (Springfield: U.S. Department of Commerce) p1
[45]	Gill K, Axer M, Dris S, Grabit R, Macias R, Noah R, Troska J, Vasey F 2005 IEEE Trans. Nucl. Sci. 52 1480 Google Scholar
[46]	汪敬 2015 博士学位论文 (上海: 中国科学院大学上海微系统与信息技术研究所) Wang J 2015 Ph. D. Dissertation (Shanghai: Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences) (in Chinese)
[47]	Zeiler M 2017 Ph. D. Dissertation (Dublin: Dublin City University
[48]	Seif El Nasr-Storey S, Détraz S, Olanterä L, Sigaud C, Soos C, Pezzullo G, Troska J, Vasey F, Zeiler M 2015 J. Instrum. 10 C3040
[49]	Seif El Nasr-Storey S, Boeuf F, Baudot C, Detraz S, Fedeli M J, Marris-Morini D, Olantera L, Pezzullo G, Sigaud C, Soos C, Troska J, Vasey F, Vivien L, Zeiler M, Ziebell M 2015 IEEE Trans. Nucl. Sci. 62 329 Google Scholar
[50]	Seif El Nasr-Storey S, Boeuf F, Baudot C, Detraz S, Fedeli M J, Marris-Morini D, Olantera L, Pezzullo G, Sigaud C, Soos C, Troska J, Vasey F, Vivien L, Zeiler M, Ziebell M 2015 IEEE Trans. Nucl. Sci. 62 2971 Google Scholar
[51]	Zeiler M, Detraz S, Olantera L, Pezzullo G, Seif El Nasr-Storey S, Sigaud C, Soos C, Troska J, Vasey F 2016 J. Instrum. 11 C1040
[52]	Zeiler M, Detraz S, Olantera L, Nasr-Storey E S S, Sigaud C, Soos C, Troska J, Vasey F 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Bremen, Germany, September 9–13, 2016 p1
[53]	Zeiler M, Detraz S, Olantera L, Sigaud C, Soos C, Troska J, Vasey F 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD) Strasbourg, France, October 29–November 6, 2016 p1
[54]	Kraxner A, Detraz S, Olantera L, Scarcella C, Sigaud C, Soos C, Troska J, Vasey F 2018 IEEE Trans. Nucl. Sci. 65 1624X Google Scholar
[55]	Barnes, Charles 1970 Phys. Rev. B 12 4735
[56]	Ohyama H, Hirao T, Simoen E, Claeys C, Onoda S, Takami Y, Itoh H 2001 Physica B 308 1185
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