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Ultrafast pulse laser has been widely used in many fields, such as optical communications, military and materials processing. Semiconductor saturable absorber mirror (SESAM) serving as a saturable absorber is an effective way to obtain ultrafast pulse laser with ps-level pulse width. The SESAM needs specially designing to meet different wavelength operations. And the low damage threshold and high fabrication cost of SESAM hinder its development. Exploring novel materials is becoming a hot topic to overcome these drawbacks and obtain ultrafast laser with excellent performance. The discovery of graphene opens the door for two-dimensional nanomaterials due to the unique photoelectric properties of layered materials. Subsequently, two-dimensional (2D) materials such as topological insulators, transition metal sulfides, and black phosphorus are reported. These materials are used as saturable absorber to obtain a pulsed laser. In this paper, we summarize the research status of fiber lasers and solid-state lasers based on 2D materials in recent years. The development status of the lasers in terms of central wavelength, pulse width, repetition frequency, pulse energy and output power are discussed. Finally, the summary and outlook are given. We believe that nonlinear optical devices based on 2D materials will be rapidly developed in the future several decades
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Keywords:
- two-dimensional materials /
- fiber lasers /
- solid-state lasers
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图 2 石墨烯(a), (b) [8], MoS2 (c), (d) [8], Bi2Se3 (e), (f) [10]和BP (g), (h)[8]的原子结构和带隙结构
Figure 2. Atomic structures and band structures of graphene (a), (b) [8], MoS2 (c), (d) [8], Bi2Se3 (e), (f)[10] and BP (g), (h)[8]. Reprinted by permission from Ref. [8]. Copyright 2014 Nature Publishing Group. Reprinted by permission from Ref. [10]. Copyright 2009 Nature Publishing Group.
图 5 二维材料的耦合方式 (a) 二维材料转移至石英片上; (b) 二维材料转移至高反镜上; (c) 三明治结构, 二维材料转移至光纤端面 (d)、锥形光纤(e)和D型光纤(f)
Figure 5. Incorporation schemes for two-dimensional materials: (a) Transferring two-dimensional materials on quartz; (b) transferring two-dimensional materials on high reflection mirror; (c) sandwiching structure; transferring or depositing SA on (d) fiber end, (e) tapered fiber and (f) D-typed fiber.
图 6 (a) 光纤激光器的脉宽和重复频率分布图; (b) 种子源和压缩脉冲的自相关曲线[20]; (c), (d) 212阶谐波锁模脉冲输出序列和自相关曲线[21]; (e), (f)锁模脉冲序列和自相关曲线[103]
Figure 6. (a) Scattergram of pulse width and repetition rate of fiber lasers. (b) Intensity autocorrelation trace, fitted with a sech2 profile. Both seed and compressed traces are normalized to 1. Selected from Ref. [20]. (c) Measured oscilloscope traces of the 212th-harmonic-output optical pulses with permission from Ref. [21] © The Optical Society. (d) Measured autocorrelation traces of the output pulses at the maximum harmonic order with permission from Ref. [21] © The Optical Society. (e) Typical oscilloscope pulse trains of mode-locking. Reprinted by permission from Ref. [103]. Copyright 2018 Wiley-VCH Verlag. (f) Autocorrelation trace with a sech2 fitting. Reprinted by permission from Ref. [103]. Copyright 2018 Wiley-VCH Verla.
图 7 (a) 黑磷纳米片溶液; (b) 黑磷饱和吸收体的非线性曲线; (c) Ho3+/Pr3+共掺的被动锁模光纤激光器; (d)锁模脉冲的自相关曲线[179]
Figure 7. (a) Layered BP solution; (b) nonlinear transmission of BP SA; (c) passively mode-locked Ho3+/Pr3+ co-doped fluoride fiber laser; (d) autocorrelation trace of the mode-locked pulses. Reprinted by permission from Ref. [179]. Copyright 2016 Nature Publishing Group.
表 1 基于石墨烯、TIs、TMDs、BP的锁模光纤激光器的性能总结
Table 1. Performance summary of mode-locked fiber lasers based on graphene, TIs, TMDs and BP.
Material type Fabrication method λ/nm Pulse width Repetition rate Energy Ref. G G CVD 1069.8 580 ps 0.9 MHz 0.41 nJ [26] CVD 1559.12 432.47 fs 25.51 MHz 0.09 nJ [27] CVD 1565.3 148 fs 101 MHz 15 pJ [28] CVD 1545 88 fs 21.15 MHz 71 pJ [29] CVD 1531.3 1.21 ps 1.88 MHz — [30] CVD 1559.34 345 fs 54.28 MHz 38.7 pJ [31] CVD 1561 1.23 ps 2.54 MHz — [32] CVD 1576 415 fs 6.84 MHz 7.3 nJ [33] LPE 1550 29 fs 18.67 MHz 2.8 nJ [20] ME 1567 220 fs 15.7 MHz 83 pJ [34] — 1554 168 fs 63 MHz 55 pJ [35] ME 1560 900 fs 2.22 GHz — [22] — 1560 992 fs 0.49 GHz — [36] LPE 1525—1559 1 ps 8 MHz 125 pJ [37] CVD 1945 205 fs 58.87 MHz 220 pJ [38] — 2060 190 fs 20.98 MHz 2.55 nJ [39] CVD 2780 42 ps 25.4 MHz 0.7 nJ [40] GO — 1556.5 615 fs 17.09 MHz — [41] Graphene-Bi2Te3 CVD 1565.6 1.17 ps 6.91 MHz — [42] TIs Bi2Se3 PM 1031.7 46 ps 44.6 MHz 0.76 nJ [43] PM 1600 360 fs 35.45 MHz 24.3 pJ [44] PM 1557.5 660 fs 12.5 MHz 0.14 nJ [45] LPE 1571 579 fs 12.54 MHz 127 pJ [46] LPE 1559 245 fs 202.7 MHz 37 nJ [47] HM 1610 0.7 ns 640.9 MHz 481 pJ [48] PM 1557—1565 1.57 ps 1.21 MHz — [49] LPE 1567/1568 22 ps 8.83 MHz 1.1 nJ [50] Bi2Te3 ME 1057.82 230 ps 1.44 MHz 0.6 nJ [51] HM 1064.47 960 ps 1.11 MHz — [52] ME 1547 600 fs 15.11 MHz 53 pJ [53] PLD 1560.8 286 fs 18.55 MHz 0.03 nJ [54] HM 1557 1100 fs 8.635 MHz 29 pJ [55] PLD 1562.4 320 fs 2.95 GHz — [24] — 1557.4 3.42 ps 388 MHz — [56] ME 1935 795 fs 27.9 MHz 36 pJ [57] — 1909.5 1.26 ps 21.5 MHz — [58] Sb2Te3 LPE 1556 449 fs 22.13 MHz 39.6 pJ [59] ME 1564 125 fs 22.4 MHz 44.6 pJ [60] ME 1561 270 fs 34.58 MHz 0.03 nJ [61] DFT 1568.6 195 fs 33 MHz 0.27 nJ [62] ME 1565 128 fs 22.32 MHz 45 pJ [15] MS 1558 167 fs 25.38 MHz 0.21 nJ [63] PLD 1542 70 fs 95.4 MHz — [23] TMDs WS2 MS 1560 288 fs 41.4 MHz 0.04 pJ [64] LPE 1550 595 fs — — [65] PLD 1560 220 fs — — [66] LPE 1561/1563 369/563 24.93/20.39 MHz 70/136 pJ [67] CVD 1565 332 fs 31.11 MHz 14 pJ [68] PLD 1559.7 452 fs 1.04 GHz 10.9 pJ PLD 1558.54 585—605 fs 8.83 MHz 1.14 nJ [66] LPE 1941 1.3 ps 34.8 MHz 172 pJ [69] MoS2 HM 1054.3 800 ps 7 MHz 1.3 nJ [70] HM 1569.5 710 fs 12.09 MHz 0.147 nJ [71] ME 1550 200 fs 14.53 MHz — [72] PLD 1561 246 fs 101.4 MHz 1.2 nJ [73] LPE 1573.7 630 fs 27.1 MHz 0.141 nJ [74] HM 1556.8 3 ps 2.5 GHz 2 pJ [75] LPE 1530.4 1.2 ps 125 MHz 344 pJ [76] LPE 1555.6 737 fs 3.27 GHz 7 pJ [21] LPE 1535—1565 0.96—7.1 ps 12.99 MHz — [77] MS 1915.5 1.25 ps 18.72 MHz — [78] WSe2 CVD 1557.4 163.5 fs 63.13 MHz 451 pJ [79] CVD 1863.96 1.16 ps 11.36 MHz 2.9 nJ [80] MoSe2 LPE 1912 920 fs 18.21 MHz — [81] SnS2 LPE 1062.66 656 ps 39.33 MHz 57 pJ [82] LPE 1562.01 623 fs 29.33 MHz 41 pJ [83] ReS2 CVD 1564 1.25 ps 3.43 MHz — [84] LPE 1558.6 1.6 ps 5.48 MHz 73 pJ [85] BP ME 1085.5 7.54 ps 13.5 MHz 5.93 nJ [86] LPE 1030.6 400 ps 46.3 MHz 0.70 nJ [87] LPE 1555 102 fs 23.9 MHz 0.08 nJ [25] LPE 1562 1236 fs 5.426 MHz — [88] LPE 1549—1575 280 fs 60.5 MHz — [89] ME 1560.7 570 fs 6.88 MHz 0.74 nJ [16] LPE 1559.5 670 fs 8.77 MHz — [90] ME 1558.7 786 fs 14.7 MHz 0.11 nJ [91] ME 1571.4 946 fs 5.96 MHz — [14] ME 1560.5 272 fs 28.2 MHz 2.3 nJ [92] LPE 1532—1570 940 fs 4.96 MHz 1.1 nJ [93] LPE 1562.8 291 fs 10.36 MHz — [94] LPE 1562 635 fs 12.5 MHz — [95] LPE 1555 687 fs 37.8 MHz — [96] LPE 1561.7 882 fs 5.47 MHz — LPE 1533 — 20.82 MHz 0.07 nJ [97] ME 1910 739 fs 36.8 MHz 0.05 nJ [98] LPE 1898 1580 fs 19.2 MHz 440 pJ [99] LPE 2094 1300 fs 290 MHz 0.39 nJ [100] 注: LPE, liquid-phase exfoliation; CVD, chemical vapor deposition; ME, mechanical exfoliation; MS, magnetron sputtering; PLD, pulsed laser deposition; HM, hydrothermal method; DFT, direct fusion technique; PM, polyol method; G, graphene; GO, graphene oxide. 表 2 基于石墨烯、TIs、TMDs、BP的调Q光纤激光器的性能总结
Table 2. Performance summary of Q-switched fiber lasers based on graphene, TIs, TMDs and BP.
Material type Fabrication methods λ Pulse width Repetation rate Energy Ref. G G — 1075 nm 70 ns 257 kHz 46 nJ [107] — 1192.6 nm 800 ps 111 kHz 0.44 μJ [106] CVD 1560 nm 2.06 μs 73.06 kHz 93.7 nJ [108] HM 1561 nm 4.0 μs 27.2 kHz 29 nJ [109] LPE 1555 nm 2 μs 103 kHz 40 nJ [110] — 2.78 μm 2.9 μs 37.2 kHz 1.67 μJ [111] GO — 1558 nm 2.3 μs 123.5 kHz 1.68 nJ [112] CVD 1044 nm 1.7 μs 215 kHz 8.37 μJ [113] — 2032 nm 3.8 μs 45 kHz 6.71 μJ [114] TIs Bi2Se3 LPE 604 nm 494 ns 187.4 kHz 3.1 nJ [115] LPE 635 nm 244 ns 454.5 kHz 22.3 nJ [116] LPE 1.06 μm 1.95 μs 29.1 kHz 17.9 nJ [117] HM 1562.27 nm 1.6 μs 53.7 kHz 0.08 nJ [118] PM 1.5 μm 13.4 μs 12.88 kHz 13.3 nJ [119] LPE 1.55 μm 2.54 μs 212 kHz — [120] LPE 1530.3 nm 24 μs 40.1 kHz 39.8 nJ [121] LPE 1.98 μm 4.18 μs 26.8 kHz 313 nJ [122] Bi2Te3 ME 1559 nm 4.88 μs 21.24 kHz 89.9 nJ [123] SM 1557.5 nm 3.71 μs 49.40 kHz 2.8 μJ [124] LPE 1.5 μm 13 μs 12.82 kHz 1.5 μJ [125] ME 1.56 μm 2.81 μs 42.8 kHz 12.7 nJ [126] Sb2Te3 MS 1530—1570 nm 400 ns 338 kHz 18 nJ [127] SnS2 — 1532.7 nm 510 ns 233 kHz 40 nJ [128] TMDs MoS2 LPE 604 nm 602 ns 118.4 kHz 5.5 nJ [129] LPE 635 nm 200 ns 512 kHz 28.7 nJ [130] LPE 1030—1070 nm 2.88 μs 89 kHz 126 nJ [131] HM 1.56 μm 3.2 μs 91.7 kHz 17 nJ [132] TEM 1550—1575 nm 6 μs 22 kHz 150 nJ [133] CVD 1529—1570 nm 1.92 μs 114.8 kHz 8.2 nJ [134] LPE 1519—1567 nm 3.3 μs 43.47 kHz 160 nJ [135] PLD 1549.8 nm 660 ns 131 kHz 152 nJ [136] CVD 1549.9 nm 1.66 μs 173 kHz 27.2 nJ [137] LPE 1550 nm 9.92 μs 41.45 kHz 184 nJ [138] LPE 1.06 μm 5.8 μs 28.9 kHz 32.6 nJ [139] 1.56 μm 5.4 μs 27 kHz 63.2 nJ 2.03 μm 1.76 μs 48.1 kHz 1 μJ TMDs WS2 LPE 604 nm 435 ns 132.2 kHz 6.4 nJ [129] CVD 1027—1065 nm 1.65 μs 97 kHz — [140] LPE 1030 nm 3.2 μs 36.7 kHz 13.6 nJ [141] LPE 1.5 μm 0.71 μs 134 kHz 19 nJ [142] LPE 1558 nm 1.1 μs 97 kHz 179 nJ [141] LPE 1547.5 nm 958 ns 120 kHz 44 nJ [143] LPE 1550 nm 3.966 μs 77.92 kHz 1.2 μJ [138] TDMs MoSe2 LPE 635.4 nm 240 ns 555 kHz 11.1 nJ [130] 1060 nm 2.8 μs 60 kHz 116 nJ LPE 1566 nm 4.8 μs 35.4 kHz 825 nJ [144] 1924 nm 5.5 μs 21.8 kHz 42 nJ LPE 1550 nm 4.04 μs 66.8 kHz 369 nJ [138] WSe2 LPE 1550 nm 4.06 μs 85.36 kHz 485 nJ [138] WSe2 LPE 1560 nm 3.1 μs 49.6 kHz 33.2 nJ [145] TiSe2 CVD 1530 nm 1.12 μs 154 kHz 75 nJ [146] BP LPE 635 nm 383 ns 409.8 kHz 27.6 nJ [147] ME 1064.7 nm 2.0 μs 76 kHz 17.8 nJ [148] ME 1.0 μm 1.16 μs 58.73 kHz 2.09 nJ [149] LPE 1.5 μm 1.36 μs 82.64 kHz 148 nJ [150] ME 1561 nm 2.96 μs 34.32 kHz 194 nJ [151] ME 1562.8 nm 10.32 μs 15.78 kHz 94.3 nJ [14] LPE 1912 nm 731 μs 113.3 kHz 632 nJ [152] 注: SM, solvothermal method; TEM, thermal evaporation method. 表 3 基于石墨烯、TIs、TMDs、BP的锁模固体激光器的性能总结
Table 3. Performance summary of mode-locked solid-state lasers based on graphene, TIs, TMDs and BP.
Material Fabrication method Integration substrate Bulk laser crystal Center wavelength Pulse
widthRepetition
rateOutput
powerRef. G CVD Quartz Ti:Sapphire 800 nm 63 fs 99.4 MHz 480 mW [154] LPE Quartz Yb:YAG 1064 nm 4 ps 88 MHz 100 mW [155] CVD GM Yb:YCOB 1.0 μm 152 fs — — [156] CVD Quartz Yb:SC2SiO5 1062.8 nm 14 ps 90.7 MHz 480 mW [157] VEM Quartz Nd:YVO4 1064 nm 8.8 ps 84 MHz 3.06 W [158] CVD Sapphire Yb:KGW 1032 nm 325 fs 66.3 MHz 1.78 W [159] LPE DM Nd:GdVO4 1064 nm 16 ps 43 MHz 360 mW [160] CVD Glass Yb:Y:CaF2 1051 nm 4.8 ps 60 MHz 370 mW [161] CVD Glass Yb:Y2SiO5 1042.6 nm 883 fs 87 MHz 1 W [162] LPE DM Yb:KGW 1031.1 nm 428 fs 86 MHz 504 mW [163] LPE DM Nd;GdVO4 1.34 μm 11 ps 100 MHz 1.29 W [164] CVD Quartz Cr:YAG 1516 nm 91 fs — 100 mW [165] CVD GM Tm:CLNGG 2.0 μm 354 fs — NA [156] CVD DM Tm:CLNGG 2014.4 nm 882 fs 95 MHz 60 mW [166] LPE Quartz Tm:YAP 2023 nm < 10 ps 71.8 MHz 268 mW [167] CVD HRM Cr:ZnS 2400 nm 41 fs 108 MHz 250 mW [168] CVD HRM Tm:CLNGG 2018 nm 729 fs 98.7 MHz 178 mW [169] CVD Quartz Tm:YAP 1988 nm — 62.38 MHz 256 mW [170] GO VEM Quartz Nd:GdVO4 1064 nm 4.5 ps 70 MHz 1.1 W [171] VEM Quartz Yb:Y2SiO5 1059 nm 763 fs 94 MHz 700 mW [172] Bi2Te3 SCCA Sapphire Nd:YVO4 1064 nm 8 ps 0.98 GHz 180 mW [173] MoS2 PLD Quartz Pr:GdLiF4 522 nm 46 ps 101.4 MHz 10 mW [153] MoS2/G PLD HRM Yb:KYW 1037.2 nm 236 fs 41.84 MHz 550 mW [174] MoS2/GO LPE DM Nd:GdVO4 1064 nm 17 ps 1.02 GHz 508 mW [175] BP LPE DM Nd:GdVO4 1064 nm 6.1 ps 140 MHz 460 mW [176] LPE HRM Yb,Lu:CALGO 1053.4 nm 272 fs 63.3 MHz 820 mW [177] LPE Quartz Nd;GdVO4 1.34 μm 9.24 ps 58.14 MHz 350 mW [178] LPE — Ho,Pr:ZBLAN 2.8 μm 8.6 ps 13.98 MHz 87.8 mW [179] 注: VEM, vertical evaporation method; SCCA, spin coating–coreduction approach; DM, dielectric mirror; HRM, high reflective mirror. 表 4 在2—3 μm波段下, 基于石墨烯、TIs、TMDs、BP的调Q固体激光器的性能总结
Table 4. Performance summary of Q-switched solid-state lasers based on graphene, TIs, TMDs and BP at the wavelength of 2-3 μm.
Material Fabrication method Integration substrate Bulk laser
crystalCenter wavelength Pulse
widthRepitition rate Output power Ref. G — Quartz Ho:YAG 2097 nm 2.6 μs 64 kHz 264 mW [180] — Quartz Tm:LGGG 2003 nm 1.29μs 43.9 kHz 140 mW [181] EG SiC Cr:ZnSe 2.4 μm 157 ns 169 kHz 256 mW [182] CVD CaF2 Er:Y2O3 2.7 μm 296 ns 44.2 kHz 114 mW [183] — HRM Er:ZBLAN 2.78 μm 2.9 μs 37 kHz 62 mW [111] CVD Quartz Er:CaF2 2.8 μm 1.3 μs 62.7 kHz 172 mW [184] CVD Sapphire Ho,Pr:LLF 2.95 μm 937 ns 55.7 kHz 172 mW [185] LPE HRM Ho:ZBLAN 3.0 μm 1.2 μs 92 kHz 102 mW [186] GO LPE — Tm:Y:CaF2 1969 nm 1.32μs 20.2 kHz 400 mW [187] LPE Quartz Tm:YLF 1928 nm 1.0 μs 38 kHz 379 mW [188] TIs Bi2Te3 LPE Quartz Tm:LuAG 2023.6 nm 620 ns 118 kHz 2.03 W [189] HEM CaF2 Ho:ZBLAN 2.979 μm 1.4 μs 81.96 kHz 327 mW [190] Bi2Te3/G SM SiO2 Tm:YAP 1980 nm 238 ns 108 kHz 2.34 W [191] Er:YSGG 2796 nm 243 ns 88 kHz 110 mW TMDs MoS2 PLD Quartz Tm:Ho:YGG 2.1 μm 410 ns 149 kHz 206 mW [192] PLD GM Tm:CLNGG 1979 nm 4.8 μs 110 kHz 62 mW [193] LPE DM Tm:CYAO 1850 nm 0.5 μs 84.9 kHz 490 mW [194] LPE Glass Tm,Ho:YAP 2129 nm 435 ns 55 kHz 275 mW [195] LPE YAG Er:Lu2O3 2.84 μm 335 ns 121 kHz 1.03 W [196] CVD YAG Ho,Pr:LLF 2.95 μm 621 ns 85.8 kHz 70 mW [197] — — Tm:GdVO4 1902 nm 0.8 μs 49.1 kHz 100 mW [198] MoS2/BP LPE SAMs Tm:YAP 1993 nm 488 ns 86 kHz 3.6 W [199] ReS2 LPE Sapphire Er:YSGG 2.8 μm 324 ns 126 kHz 104 mW [200] LPE YAG Er:SrF2 2.79 μm 508 ns 49 kHz 580 mW [201] WS2 TD SiO2 Tm:LuAG 2.0 μm 660 ns 62 kHz 1.08 W [202] SGM HRM Ho3+/Pr3+:ZBLAN 2.86 μm 1.73 us 131 kHz 48 mW [203] LPE YAG Ho,Pr,LLF 2.95 μm 654 ns 90.4 kHz 82 mW [204] BP ME Quartz Tm:Ho:YAG 2.1 μm 636 ns 122 kHz 27 mW [205] LPE Quartz Tm:YAP 1988 nm 1.8 us 19.3 kHz 151 mW [206] LPE DM Tm:YAP 1969 nm 181 ns 81 kHz 3.1 W [207] ME HRM Tm:YAG 2 μm 3.12 us 11.6 kHz 38 mW [208] LPE — Ho:ZBLAN 2.9 μm 2.4 μs 62.5 kHz 309 mW [179] LPE DM Cr:ZnSe 2.4 μm 189 ns 176 kHz 36 mW [209] LPE — Er:CaF2 2.8 μm 955 ns 41.9 kHz 178 mW [210] LPE GM Tm:CaYAlO4 1.93 μm 3.1 μs 17.7 kHz 12 mW [211] LPE GM Er:Y2O3 2.72 μm 4.5 μs 12.6 kHz 6 mW [211] LPE Silicon Er:SrF2 2.79 μm 702 ns 77 kHz 180 mW [212] LPE — Er:ZBLAN 2.8 μm 1.2 μs 63 kHz 485 mW [213] LPE Silicon Er:CaF2 2.8 μm 955 ns 41.9 kHz 178 mW [210] LPE CaF2 Ho,Pr:LLF 2.95 μm 194 ns 159 kHz 385 mW [214] 注: SGM, sulfidation grown method; GM, gold mirror. -
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