Observation of planar Hall effect in topological semimetal ZrSiSe device

Wei Bo-Yuan; Bu Hai-Jun; Zhang Shuai; Song Feng-Qi

doi:10.7498/aps.68.20191501

Abstract

Planar Hall effect(PHE) is a newly emerging experimental tool to detect chiral anomaly and nontrivial Berry curvature in topological semimetals, as chiral-anomaly-induced negative magnetoresistance is sensitive to the angle between magnetic field B and current I. Here we demonstrate the PHE in a topological nodal-line semimetal ZrSiSe device by electric transport measurement. According to our analysis, we conclude that the PHE results from the trivial anisotropic magnetoresistance (AMR). We argue that there is no inevitability between PHE and chiral anomaly, and some other mechanisms can induce PHE. This work indicates that PHE cannot be considered as evidence of chiral anomaly and one may seek for non-topological origin in such studies.

Keywords:

Authors and contacts

Center of Artificial Microstructure Science and Technology Innovation, National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China

Corresponding author: Song Feng-Qi, songfengqi@nju.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0303203), the National Natural Science Foundation of China (Grant Nos. 91622115, 11522432, 11574217, U1732273, U1732159, 61822403, 11874203, 11904165, 11904166), and the National Science Fundation of Jiangsu Province, China (Grant No. BK20160659)

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References

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Cited By

图 1 ZrSiSe单晶及纳米片的表征　(a) ZrSiSe的晶体结构; (b) ZrSiSe晶体的EDS谱; (c) ZrSiSe晶体(00n)面的X射线衍射谱; (d) 零磁场下ZrSiSe纳米片电阻随温度的变化曲线. 内插图是纳米片器件的光学图, 其中白色基准尺为5 μm

Figure 1. The characterization of the ZrSiSe single crystals and nanoflakes: (a) The crystal structure of ZrSiSe; (b) the EDS spectrum of ZrSiSe crystal; (c) the single crystal X-ray-diffraction data of the (00n) surfaces of the sample; (d) the resistance varies with temperature at zero field. The inset is the optical graph of ZrSiSe flake device, and the white scale bar is 5 μm.

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图 2 ZrSiSe纳米片的SdH振荡　(a) 垂直磁场下ZrSiSe纳米片在不同温度下的磁阻; (b) 提取到的磁阻关于1/B的SdH振荡; (c) 图(b)中振荡的快速傅里叶变换; (d) 图(c)中随温度变化的FFT振幅. 实线是利用Lifshitz-Kosevich公式进行的拟合, 得到有效质量为0.13 m_e

Figure 2. The SdH oscillations of ZrSiSe nanoflakes: (a) Magnetoresistance of ZrSiSe nanoflakes under perpendicular magnetic field at different temperatures; (b) the extracted SdH oscillations of magnetoresistance verus 1/B; (c) fast Fourier transformation spectra of the oscillation in (b); (d) the temperature dependence of FFT amplitude in (c). The solid line is a fit to the Lifshitz-Kosevich formula and gives the cyclotron effective mass of 0.13 m_e.

DownLoad: Full-Size Img PowerPoint

图 3 ZrSiSe纳米片中PHE的观测　(a) T = 2 K时, 不同磁场下的PHE以及相应的拟合曲线; (b) T = 2 K时, PHE振幅随磁场强度大小的变化. 内插图是PHE测量的器件示意图; (c) B = 9 T时, 不同温度下的PHE以及相应的拟合曲线; (d) B = 9 T时, PHE振幅随温度的变化

Figure 3. PHE measurement in ZrSiSe nanoflakes: (a) The measured PHE and the corresponding fitting curves under different B fields when the temperature is 2 K; (b) the amplitude of PHE varies with magnetic field when temperature is 2 K. The inset displays the schematic of the device configuration for PHE measurement; (c) angle dependence of the planar Hall resistance taken at different temperatures when the field is 9 T; (d) the amplitude of PHE varies with temperature when the field is 9 T.

DownLoad: Full-Size Img PowerPoint

图 4 ZrSiSe中PHE的起源　(a) T = 2 K时, 不同磁场下的平面AMR. 红色实线是利用公式拟合得到的曲线; (b) T = 2 K时, 平面AMR振幅随磁场的变化. 青色实线是对实验数据点进行的幂函数拟合曲线; (c) 从图(a)中提取的R_⊥和R_||随磁场的变化; (d) 不同磁场下, 以θ为参量得到的R_xx-R_yx关系曲线

Figure 4. Origin of the measured PHE: (a) In-plane AMR verus angle θ at various fields when temperature is 2 K. Solid red curves represent the fitting curves; (b) the amplitude of AMR varies with field at 2 K. The cyan curve is the power law fit curve for the experimental data points; (c) R_⊥ and R_|| extracted from the experimental date in panel (a). the red and blue solid curves represent the power law fit curves for R_⊥ and R_||, respectively; (d) the orbits obtained by plotting R_xx and R_yx with θ as the parameter at specific magnetic field.

DownLoad: Full-Size Img PowerPoint

[1]	李兆国, 张帅, 宋凤麒 2015 物理学报 64 097202 Google Scholar Li Z G, Zhang S, Song F Q 2015 Acta Phys. Sin. 64 097202 Google Scholar
[2]	王青, 盛利 2015 物理学报 9 097302 Google Scholar Wang Q, Sheng L 2015 Acta Phys. Sin. 9 097302 Google Scholar
[3]	王怀强, 杨运友, 鞠艳, 盛利, 邢定钰 2013 物理学报 62 037202 Wang H Q, Yang Y Y, Ju Y, Sheng L, Xing D Y 2013 Acta Phys. Sin. 62 037202
[4]	伊长江, 王乐, 冯子力, 杨萌, 闫大禹, 王翠香, 石友国 2015 物理学报 67 128102 Google Scholar Yin C J, Wang L, Feng Z L, Yang M, Yan D Y, Wang C X, Sin Y G 2015 Acta Phys. Sin. 67 128102 Google Scholar
[5]	Gong Y, Guo J W, Li J H, Zhu K J, Liao M H, Liu X Z, Zhang Q H, Gu L, Tang L, Feng X, Zhang D, Li W, Song C L, Wang L L, Yu P, Chen X, Wang Y Y, Yao H, Duan W H, Xu Y, Zhang S C, Ma X C, Xue Q K, He K 2019 Chin. Phys. Lett. 36 076801 Google Scholar
[6]	Jiang G Y, Feng Y, Wu W X, Li S R, Bai Y H, Li Y X, Zhang Q H, Gu L, Feng X, Zhang D, Song C L, Wang L L, Li W, Ma X C, Xue Q K, Wang Y Y, He K 2018 Chin. Phys. Lett. 35 076802 Google Scholar
[7]	Wang Z J, Sun Y, Chen X Q, Franchini C, Xu G, Weng H M, Dai X, Fang Z 2012 Phys. Rev. B 85 195320 Google Scholar
[8]	Wang Z J, Weng H M, Wu Q S, Dai X, Fang Z 2013 Phys. Rev. B 88 125427 Google Scholar
[9]	Chang T R, Xu S Y, Sanchez D S, Tsai W F, Huang S M, Chang G Q, Hsu C H, Bian G, Belopolski I, Yu Z M, Yang S A, Neupert T, Jeng H T, Lin H, Hasan M Z 2017 Phys. Rev. Lett. 119 026404 Google Scholar
[10]	Liu Z K, Zhou B, Zhang Y, Wang Z J, Weng H M, Prabhakaran D, Mo S K, Shen Z X, Fang Z, Dai X, Hussain Z, Chen Y L 2014 Science 343 864 Google Scholar
[11]	Bian G, Chang T R, Sankar R, Xu S Y, Zheng H, Neupert T, Chiu C K, Huang S M, Chang G Q, Belopolski I, Sanchez D S, Neupane M, Alidoust N, Liu C, Wang B K, Lee C C, Jeng H T, Zhang C L, Yuan Z J, Jia S, Bansil A, Chou F C, Lin H, Hasan M Z 2016 Nat. Commun. 7 10556 Google Scholar
[12]	Schoop L M, Ali M N, Straßer C, Topp A, Varykhalov A, Marchenko D, Duppel V, Parkin S S, Lotsch B V, Ast C R 2016 Nat. Commun. 7 11696 Google Scholar
[13]	Neupane M, Belopolski I, Hosen M M, Sanchez D S, Sankar R, Szlawska M, Xu S Y, Dimitri K, Dhakal N, Maldonado P, Oppeneer P M, Kaczorowski D, Chou F C, Hasan M Z, Durakiewicz T 2016 Phys. Rev. B 93 201104 Google Scholar
[14]	Hu J, Tang Z J, Liu J Y, Liu X, Zhu Y L, Graf D, Myhro K, Tran S, Lau C N, Wei J, Mao Z Q 2016 Phys. Rev. Lett. 117 016602 Google Scholar
[15]	Pan H Y, Tong B B, Yu J H, Wang J, Fu D Z, Zhang S, Wu B, Wan X G, Zhang C, Wang X F, Song F Q 2018 Sci. Rep. 8 9340 Google Scholar
[16]	Bian G, Chang T R, Zheng H, Velury S, Xu S Y, Neupert T, Chiu C K, Huang S M, Sanchez D S, Belopolski I, Alidoust N, Chen P J, Chang G Q, Bansil A, Jeng H T, Lin H, Hasan M Z 2016 Phys. Rev. B 93 121113 Google Scholar
[17]	Lv B Q, Xu N, Weng H M, Ma J Z, Richard P, Huang X C, Zhao L X, Chen G F, Matt C E, Bisti F, Strocov V N, Mesot J, Fang Z, Dai X, Qian T, Shi M, Ding H 2015 Nat. Phys. 11 724 Google Scholar
[18]	Yang L X, Liu Z K, Sun Y, Peng H, Yang H F, Zhang T, Zhou B, Zhang Y, Guo Y F, Rahn M, Prabhakaran D, Hussain Z, Mo S K, Felser C, Yan B, Chen Y L 2015 Nat. Phys. 11 728 Google Scholar
[19]	Xu S Y, Belopolski I, Alidoust N, Neupane M, Bian G, Zhang C L, Sankar R, Chang G Q, Yuan Z J, Lee C C, Huang S M, Zheng H, Ma J, Sanchez D S, Wang B K, Bansil A, Chou F C, Shibayev P P, Lin H, Jia S, Hasan M Z 2015 Science 349 613 Google Scholar
[20]	Young S M, Zaheer S, Teo J C, Kane C L, Mele E J, Rappe A M 2012 Phys. Rev. Lett. 108 140405 Google Scholar
[21]	Mañes J L 2012 Phys. Rev. B 85 155118 Google Scholar
[22]	Xu S Y, Alidoust N, Belopolski I, Yuan Z J, Bian G, Chang T R, Zheng H, Strocov V N, Sanchez D S, Chang G Q, Zhang C L, Mou D X, Wu Y, Huang L N, Lee C C, Huang S M, Wang B K, Bansil A, Jeng H T, Neupert T, Kaminski A, Lin H, Jia S, Hasan M Z 2015 Nat. Phys. 11 748 Google Scholar
[23]	Xu N, Weng H M, Lv B Q, Matt C E, Park J, Bisti F, Strocov V N, Gawryluk D, Pomjakushina E, Conder K, Plumb N C, Radovic M, Autès G, Yazyev O V, Fang Z, Dai X, Qian T, Mesot J, Ding H, Shi M 2016 Nat. Commun. 7 11006 Google Scholar
[24]	Fukushima K, Kharzeev D E, Warringa H J 2008 Phys. Rev. D 78 074033 Google Scholar
[25]	Son D T, Spivak B Z 2013 Phys. Rev. B 88 104412 Google Scholar
[26]	Kharzeev D E 2014 Prog. Part. Nucl. Phys. 75 133 Google Scholar
[27]	Huang X C, Zhao L X, Long Y J, Wang P P, Chen D, Yang Z H, Liang H, Xue M Q, Weng H M, Fang Z, Dai X, Chen G F 2015 Phys. Rev. X 5 031023
[28]	Zhang C L, Xu S Y, Belopolski I, Yuan Z J, Lin Z Q, Tong B B, Guang B, Nasser A, Lee C C, Huang S M, T Chang R, ChangG Q, Hsu C H, Jeng H T, Neupane M, Sanchez D S, Zheng H, Wang J F, Lin H, Zhang C, Lu H Z, Shen S Q, Neupert T, Hasan M Z, Jia S 2016 Nat. Commun. 7 10735 Google Scholar
[29]	Arnold F, Shekhar C, Wu S C, Sun Y, Dos Reis R D, Kumar N, Naumann M, Ajeesh M O, Schmidt M, Grushin A G, Bardarson J H, Baenitz M, Sokolov D, Borrmann H, Nicklas M, Felser C, Hassinger E, Yan B H 2016 Nat. Commun. 7 11615 Google Scholar
[30]	Dos Reis R D, Ajeesh M O, Kumar N, Arnold F, Shekhar C, Naumann M, Schmidt M, Nicklas M, Hassinger E 2016 New J. Phys. 18 085006 Google Scholar
[31]	Li C Z, Wang L X, Liu H W, Wang J, Liao Z M, Yu D P 2015 Nat. Commun. 6 10137 Google Scholar
[32]	Kumar N, Guin S N, Felser C, Shekhar C 2018 Phys. Rev. B 98 041103(R)Google Scholar
[33]	Liu Q Q, Fei F C, Chen B, Bo X Y, Wei B Y, Zhang S, Zhang M H, Xie F J, Naveed M, Wan X G, Song F Q, Wang B G 2019 Phys. Rev. B 99 155119 Google Scholar
[34]	Liang S H, Lin J J, Kushwaha S, Xing J, Ni N, Cava R J, Ong N P 2018 Phys. Rev. X 8 031002
[35]	Li P, Zhang C H, Zhang J W, Wen Y, Zhang X X 2018 Phys. Rev. B 98 121108 Google Scholar
[36]	Smit J 1951 Physica 17 612 Google Scholar
[37]	Burkov A A 2017 Phys. Rev. B 96 041110 Google Scholar
[38]	Nandy S, Sharma G, Taraphder A, Tewari S 2017 Phys. Rev. Lett. 119 176804 Google Scholar
[39]	West F G 1963 J. Appl. Phys. 34 1171 Google Scholar
[40]	Marsocci V A, Chen T T 1969 J. Appl. Phys. 40 3361 Google Scholar
[41]	Taskin A A, Legg H F, Yang F, Sasaki S, Kanai Y, Matsumoto K, Rosch A, Ando Y 2017 Nat. Commun. 8 1340 Google Scholar
[42]	Wu B, Pan X C, Wu W K, Fei F C, Chen B, Liu Q Q, Bu H J, Cao L, Song F Q, Wang B G 2018 Appl. Phys. Lett. 113 011902 Google Scholar
[43]	Tang H X, Kawakami R K, Awschalom D D, Roukes M L 2003 Phys. Rev. Lett. 90 107201 Google Scholar
[44]	Chiu Y C, Chen K W, Schoenemann R, Quito V L, Sur S, Zhou Q, Graf D, Kampert E, Förster T, Yang K, McCandless G T, Chan J Y, Baumbach R E, Johannes M D, Balicas L 2019 arXiv: 1904.10123

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Vol. 68, Issue 22 - 2019-11-20

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