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To contrast the generation and their evolution behaviors of irradiation damage in lithium fluoride under various ion, in situ luminescence measurements from lithium fluoride are carried out under 100 keV H+, He+ and O+ on the ion beam induced luminescence(IBIL) experimental setup on BNU400 ion implanter. Combined with Stopping and Range of Ions in Matter (SRIM) calculation of 100 keV H+, He+ and O+ stopping power in lithium fluoride, the emission intensity under He+ is the strongest,due to the higher excitation density of electron-hole pairs than them under H+ and the rising non-radiative recombination ratio under heavy ion O+. With the mass number increase of the incident ion, the nuclear stopping power would be increased, resulting in the faster rate of both formation and annihilation of point defects、the lower fluence for F-type centers reaching the highest intensity and the weaker luminescence intensity at the state of equilibrium. The irradiation resistance of
$ \rm F_3^{-}/F_2^+ $ centers at 880 nm are better than the F2 centers at 670 nm, shown not only in the slower formation and annihilation rates of$ \rm F_3^{-}/F_2^+ $ centers but also the higher luminescence intensity of$ \rm F_3^{-}/F_2^+ $ centers under heavy ion O+.-
Keywords:
- ion beam induced luminescence /
- lithium fluoride /
- various ions
[1] 黄振辉 1983 人工晶体学报 4 36
Huang Z H, 1983 J. Synthetic. Cryst. 4 36
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Google Scholar
[10] 杨百瑞, 李文琪 1993 人工晶体学报 2 163
Yang B R, Li W Q 1993 J. Synthetic. Cryst. 2 163
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Google Scholar
[13] Skuratov V A, Didyk A Y, Alazm S A 1997 Radiat. Phys. Chem. 50 183
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Qiu M L, Wang G F, Chu Y J, Zheng L, Xu M, Yin P 2017 Acta Phys. Sin. 66 207801
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[21] Rivera A, Méndez A, García G, Olivares J, Cabrera J M, Agulló-López F 2008 J. Lumin. 128 703
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图 1 BNU400注入机IBIL装置示意图
Figure 1. Schematic of the IBIL experimental setup on BNU400 ion implanter
图 2 100 keV能量时H+、He+和O+离子在氟化锂中的阻止本领的SRIM 模拟结果
Figure 2. SRIM calculation of 100 keV H+, He+ and O+ stopping power in lithium fluoride
图 3 100 keV的H+辐照单晶氟化锂的发光强度随注量演变情况
Figure 3. Emission intensity as function of both fluence and wavelength obtained under 100 keV H+
图 4 100 keV的H+离子辐照氟化锂时296 nm、340 nm和400 nm处发光强度随注量演变情况
Figure 4. Evolutions of the luminescence peak intensities at 296, 340, 400 nm with the irradiation fluence under 100 keV H+
图 5 100 keV的H+离子辐照氟化锂时540 nm、670 nm和880 nm处发光强度随注量演变情况
Figure 5. Evolutions of the luminescence peak intensities at 540, 670, 880 nm with the irradiation fluence under 100 keV H+
图 6 100 keV的He+离子辐照氟化锂296 nm、340 nm和400 nm处发光强度随注量演变情况
Figure 6. Evolutions of the luminescence peak intensities at 296, 340, 400 nm with the irradiation fluence under 100 keV He+
图 7 100 keV的He+离子辐照氟化锂540 nm、670 nm和880 nm处发光强度随注量演变情况
Figure 7. Evolutions of the luminescence peak intensities at 540, 670, 880 nm with the irradiation fluence under 100 keV He+
图 8 100 keV的O+离子辐照氟化锂时296 nm、340 nm和400 nm处发光强度随注量演变情况
Figure 8. Evolutions of the luminescence peak intensities at 296, 340, 400 nm with the irradiation fluence under 100 keV O+
图 9 100 keV的O+离子辐照氟化锂540 nm、670 nm和880 nm处发光强度随注量演变情况
Figure 9. Evolutions of the luminescence peak intensities at 540, 670, 880 nm with the irradiation fluence under 100 keV O+
表 1 100 keV的H+、He+和O+3种离子辐照氟化锂材料的结果对比
Table 1. Comparisons of lithium fluoride under 100 keV H+, He+ and O+
离子种类 $ \rm F_3^{-} $色心 Φmax/cm–2 F2色心 Φmax/cm–2 $ \rm F_3^{-}/F_2^+ $色心 Φmax/cm–2 Se/eV·Å–1 Sn/eV·Å–1 Rp/μm H+ 10 × 1013 11.5 × 1013 24.3 × 1013 13.92 0.0232 0.8336 He+ 5 × 1013 3.3 × 1013 9.5 × 1013 21.04 0.3004 0.6708 O+ 3.8 × 1013 3 × 1013 5.9 × 1013 25.64 10.15 0.2459 
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[1] 黄振辉 1983 人工晶体学报 4 36
Huang Z H, 1983 J. Synthetic. Cryst. 4 36
[2] Dergachev A Y, Mirov S B 1998 Opt. Commun. 147 107
Google Scholar
[3] Baldacchini G, Davidson A T, Kalinov V S, KozakiewiczA G, Montereali R M, Nichelatti E, Voitovich A P 2007 J. Lumin. 122 371
[4] Ribeiro D R S, Souza D N, Maia A F, Baldochi S L, Caldas L V E 2008 Radiat. Meas. 43 1132
Google Scholar
[5] Shiran N, Belsky A, Gektin A, Gridin S, Boiaryntseva I 2013 Radiat. Meas. 56 23
Google Scholar
[6] Voitovich A P, Kalinov V S, Runets L P, Stupak A P, Martynovich E F, Montereali R M, Baldacchini G 2013 J. Lumin. 143 207
Google Scholar
[7] Qiu M L, Chu Y J, Wang G F, Xu M, Zheng L 2017 Chin. Phys. Lett. 34 016104
Google Scholar
[8] Baldacchini G 2002 J. Lumin. 100 333
Google Scholar
[9] Skuratov V A, Gun K J, Stano J, Zagorski D L 2006 Nucl. Instrum.Meth. Phys. Res. B 245 194
Google Scholar
[10] 杨百瑞, 李文琪 1993 人工晶体学报 2 163
Yang B R, Li W Q 1993 J. Synthetic. Cryst. 2 163
[11] Townsend P D, Wang Y F 2013 Energy.Proced. 41 64
Google Scholar
[12] Crespillo M L, Graham J T, Zhang Y, Weber W J 2016 J. Lumin. 172 208
Google Scholar
[13] Skuratov V A, Didyk A Y, Alazm S A 1997 Radiat. Phys. Chem. 50 183
Google Scholar
[14] Valotto G, Quaranta A, Piccinini M, Montereali R M 2015 Opt. Mater. 49 1
Google Scholar
[15] 仇猛淋, 王广甫, 褚莹洁, 郑力, 胥密, 殷鹏 2017 物理学报 66 207801
Google Scholar
Qiu M L, Wang G F, Chu Y J, Zheng L, Xu M, Yin P 2017 Acta Phys. Sin. 66 207801
Google Scholar
[16] Chu Y J, Wang G F, Zheng L, Qiu M L, Yin P, Xu M 2018 Surf. Coat. Tech. 348 91
Google Scholar
[17] Bachiller-Perea D, Jiménez-Rey D, Muñoz-Martín A, Agulló-López, F 2016 J. Phys. D. Appl. Phys. 49 085501
Google Scholar
[18] Jiménez-Rey D, Peña-Rodríguez O, Manzano-Santamaría J, Olivares J, Muñoz-Martín A, Rivera A, Agulló-López F 2012 Nucl.Instrum.Meth. Phys. Res. B 286 282
Google Scholar
[19] Crespillo M L, Graham J T, Agullo-Lopez F, Zhang Y, Weber W J 2017 J. Phys. Chem. C. 121 19758
Google Scholar
[20] Agullo-Lopez F, Climent-Font A, Muñoz-Martín Á, Olivares J, Zucchiatti A 2016 Prog. Mater. Sci. 76 1
Google Scholar
[21] Rivera A, Méndez A, García G, Olivares J, Cabrera J M, Agulló-López F 2008 J. Lumin. 128 703
Google Scholar
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