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The optical and electrical properties of ZnO related on the type and the concentration of defects in ZnO crystal. Ion implantation and annealing can change the type and the concentration of defects in ZnO. To understand the variation of defects in ZnO during ion implantation and after different temperature annealing, in situ luminescence measurements of ZnO crystal samples were carried out by ion beam induced luminescence (IBIL) during ion implantation of 2 MeV H+ and then after annealing at 473 K and 800 K in vacuum on the GIC4117 tandem accelerator in Beijing Normal University. IBIL spectra of ZnO showtwo emission peaks: UV emission, which is called near band emission (NBE), and visible emission, which is called deep band emission (DBE).The high-intensity of DBE and weak NBE of IBIL spectra of ZnOmay be due to the NBE is intrinsic to ZnO samples and therefore is just visibly observed from samples that are virtually defect-free. With the ion implantation, the destruction of the crystal structure and the arising of a mass of defects, inducing the weak intensity NBE and intense DBE.In addition, the overall IBIL spectra of ZnOreveal decrease intensity with the ion fluence,which indicates that the concentration of luminescence centersdecreases duringion implantation.With the H+ fluence, the concentration of the point defects increases. The point defects migrate and subsequently agglomerate into larger defect clusters. These defect clusters serve as traps for catching electrons and holes, which result in the quenching of luminescence centres. Annealing can help todecompose the defect clusters and repair the defects of crystal. However, amounts of defects and clusters still remain in the irradiated sample annealed at 473 K in vacuum, which acted as nonradiative center and suppress the luminescence induced weak intensity of IBIL. Annealing the sample at 800 K in vacuum may facilitate the decomposition of defect clusters during ion irradiation to point defects and the point defect return to the lattice position that can reduce the nonequilibrium defects inside the crystal and improve the crystallinity of the crystal, which increase the intensity of its IBIL. -
Keywords:
- ions beam induced luminescence /
- annealing /
- ZnO
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图 1 高低温IBIL 装置简图
Figure 1. Schematic of the IBIL experimental setup for high- and low-temperature applications.
图 2 常温下ZnO的IBIL光谱随离子注量演变情况
Figure 2. The Normalized IBIL spectra of ZnO at various fluences at room temperature.
图 3 辐照后的样品在473 K退火后的IBIL光谱
Figure 3. The Normalized IBIL of the sample with irradiation by 2 MeV H+ and annealing at 473 K.
图 4 辐照后的样品在800 K退火后的IBIL光谱
Figure 4. The Normalized IBIL of the sample with irradiation by 2 MeV H+ and annealing at 800 K.
图 5 473 K和800 K退火后的样品的NBE强度随离子注量的演变情况
Figure 5. Evolutions of the luminescence peak intensitiesof NBE with the irradiation fluence at annealingtemperatures of 473 K and 800 K for irradiated samples.
图 6 473 K真空退火3 h后的样品的IBIL光谱
Figure 6. The Normalized IBIL of the sample with annealing at 473 K in vacuum for 3 h.
图 7 473 K真空退火3 h后再辐照的样品, 在800 K真空退火3 h后的IBIL光谱
Figure 7. The Normalized IBIL of the sample annealed at 473 K in vacuum for 3 h was irradiated by 2 MeV H+, and then was annealed at 800 K in vacuum in vacuum for 3 h.
图 8 473 K退火和473 K退火后辐照, 再800 K退火的样品的NBE强度随离子注量的演变情况
Figure 8. Evolutions of the luminescence peak intensities of NBE with the irradiation fluence at annealing temperatures of 473 K for virgin samples and annealing temperature of 800 K for irradiated samples which has been annealed at 473 K.
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[1] Huddle J R, Grant P G, Ludington A R, Foster R L 2007 Nucl. Instrum. Methods Phys. Res. Sect. B 261 475
Google Scholar
[2] Rodrigues J, Miranda S M C, Peres M, et al. 2013 Nucl. Instrum. Methods Phys. Res. Sect. B 306 201
Google Scholar
[3] Zhang X M, Lu M Y, Zhang Y, et al. 2009 Adv. Mater. 21 2767
Google Scholar
[4] Li L, Yang H, ZhaoH, Yu J, Ma J, An L 2010 Appl. Phys. A-Mater. Sci. Process. 98 635
Google Scholar
[5] Epie E N, Chu W K 2016 Appl. Surf. Sci. 371 28
Google Scholar
[6] 邢光建, 李钰梅, 江伟, 韩彬, 王怡, 武光明 2009 真空 46 41
Xing G J, Li Y M, Jiang W, Han B, Wang Y, Wu G M 2009 Vacuum 46 41
[7] Zhou Z, Kato K, Komaki T, Yoshino M, Morinaga M 2004 Int. J. Hydrog. Energy 29 323
Google Scholar
[8] 潘峰, 丁斌峰, 法涛, 成枫锋, 周生强, 姚淑德 2011 物理学报 60 108501
Google Scholar
Pan F, Ding B F, Fa T, Cheng F F, Zhou S Q, Yao S D 2011 Acta Phys. Sin. 60 108501
Google Scholar
[9] 李重阳, 邱诚, 柳丹, 叶霞, 王栋, 陈志权 2013 武汉大学学报(理学版) 04 96
Li C Y, Qu C, Liu D, Ye X, Wang D, Chen Z Q 2013 Journal of Wuhan University (Natural Science Edition) 04 96
[10] 徐自强, 邓宏, 谢娟, 李燕, 陈航, 祖小涛, 薛书文 2006 强激光与粒子束 18 169
Xu Z Q, Deng H, Xie J, Li Y, Chen H, Zu X T, Xue S W 2006 High Power Laser Part. Beams HPLPB 18 169
[11] 郭德双, 陈子男, 王登魁, 唐吉龙, 方铉, 房丹, 林逢源, 王新伟, 魏志鹏 2019 中国激光 46 0403002
Google Scholar
Guo D S, Chen Z N, Wang D K, Tang J L, Fang X, Fang D, Lin F Y, Wang X W, Wei Z P 2019 Chin. J. Lasers 46 0403002
Google Scholar
[12] 朱影 2018 硕士学位论文 (杭州: 浙江大学)
Zhu Y 2018 M. S. Dissertation (Hangzhou: Zhejiang University) (in Chinese)
[13] 仇猛淋 2017 中国核学会 中国威海 2017 10月16日—18日 第6页
Qiu M L 2017 Proceedings of Chinese Nuclear Society Weihai, China, October 16–18, 2017 p6 (in Chinese)
[14] 仇猛淋, 王广甫, 褚莹洁, 郑力, 胥密, 殷鹏 2017 物理学报 66 207801
Google Scholar
Qiu M L, Wang GF, Chu YJ, Zheng L, Xu M, Yin P 2017 Acta Phys. Sin. 66 207801
Google Scholar
[15] Cui M, Zhang Z, Wang Y, Finch A, Townsend P D 2018 Luminescence 33 4
Google Scholar
[16] Validzic I, Comor M, Ahrenkiel S P, Comor M I 2015 Metall. Mater. Trans. A 46 3679
Google Scholar
[17] Trinh T A, Hong I S, Lee H R, Cho Y S 2009 Nucl. Instrum. Methods Phys. Res. Sect. B 267 3535
Google Scholar
[18] Chen Z Q, Sekiguchi T, Yuan X L, Maekawa M, KawasusoA 2004 J. Phys.Condens. Matter 16 S293
Google Scholar
[19] Hu Y, Xue X, Wu Y 2014 Radiat. Phys. Chem. 101 20
Google Scholar
[20] Gruzintsev A N, Yakimov E E 2005 Inorg. Mater. 41 725
Google Scholar
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