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Magnetic imaging technology based on photo-emission electron microscopy (PEEM) has become an important and powerful tool for observing the magnetic domain in spintronics. The PEEM can get access to real-time imaging with high spatial resolution and is greatly sensitive to the spectroscopic information directly from the magnetic films and surfaces through photoemission process with variable excitation sources. Moreover, the breakthrough in the deep ultraviolet (DUV) laser technology makes it possible to realize domain imaging without the limitation of synchrotron radiation facilities or the direct excitation of photoelectrons due to the high enough photon energy of the source in the current threshold excitation study. In this review article, the deep ultraviolet photo-emission electron microscopy system is first introduced briefly. Then, a detailed study of the magnetic domain observation for the surface of L10-FePt films by the DUV-PEEM technique is presented, where a spatial resolution as high as 43.2 nm is successfully achieved. The above results clearly indicate that the DUV-PEEM reaches a level equivalent to the level reached by X-ray photoemission imaging technique. Finally, a series of recent progress of perpendicular FePt magnetic thin films obtained by the DUV-PEEM technique is provided in detail. For example, a stepped Cr seeding layer is used to form the large-area epitaxial FePt films with (001) and (111) two orientations, where magnetic linear dichroism (MLD) with large asymmetry is observed in the transition area of two phases. The signal of MLD is 4.6 times larger than that of magnetic circular dichroism. These results demonstrate that the magnetic imaging technology based on DUV-PEEM with excellent resolution ability will potentially become an important method to study magnetic materials in the future.
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Keywords:
- photo-emission electron microscopy /
- deep ultraviolet laser /
- magnetic circular/linear dichroism /
- high resolution magnetic imaging
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图 9 (a) PEEM系统能量狭缝的结构示意图; (b)色散模式下采集得到的单晶Ru (0001)上生长岛状PbO样品的深紫外激光-光发射谱图; (c)线扫描得到的费米边附近激光光发射谱的归一化强度曲线
Figure 9. (a) Schematic drawing of energy filter in PEEM system; (b) DUV-photo emission spectrum obtained from island-shaped PbO grown on Ru (0001) in dispersion mode; (c) normalized line profile with the calculated spatial resolution from selected area marked in panel (b).
图 10 (a) MgO/Cr (5 nm)/Pt (10 nm)/FePt (20nm)结构样品垂直于膜面的磁滞回线; (b) FePt薄膜的LEEM图像(Ep = 8.6 eV), 插图所示为该区域的LEED图像(Ep = 16.3 eV); (c)图(b)红色方框标识区域使用圆偏振DUV获得的PEEM磁畴图像; (d)使用磁力显微镜采集同一样品的磁畴照片; (e)插图所示视野内对DUV-PEEM磁畴成像空间分辨率的测定[69]
Figure 10. (a) Schematic structure and out-of-plane hysteresis loop of MgO (001) sub. /Cr (5 nm)/Pt (10 nm)/FePt (20 nm) films; (b) LEEM image (Ep = 8.6 eV) and LEED (Ep = 16.3 eV) pattern (inset) of FePt film; (c) magnetic domain (contrast enhanced) of the area marked by a red dashed rectangle in (b) taken with circularly polarized DUV laser; (d) magnetic domain image of the FePt films with the same structure obtained by magnetic force microscopy; (e) normalized line profile with the estimated spatial resolution from selected area marked in inset[69].
图 11 (a) Cr纳米台阶上外延生长的Pt种子层结构示意图; (b) Pt种子层的UV-PEEM图像; (c)暗区A对应的LEEM与LEED图像; (d)亮区B对应的LEEM与LEED图像; (e)过渡区域的LEEM图像(区域A, B与C的位置在(b)图中标出); (f) Pt种子层选区((b)图中红色线框) DUV-PEEM图像; (g)与(f)图同区域的线二色DUV-PEEM图像[69]
Figure 11. (a) Schematic drawing of a Pt seed layer with Cr step. (b) UV PEEM image of Pt seed layer consisting of two orientations. LEEM and LEED patterns of the selected areas marked by blue rectangles in panel (b): (c) dark area A, (d) light area B and (e) boundary area C. (f) DUV-PEEM image of the selected area marked by a red dashed rectangle in panel (b). (g) Linear dichroism image of the same area as panel (f)[69].
图 12 (a)在具有双晶体取向的Pt种子层上生长FePt后的UV-PEEM图像; (b)区域I ((a)图标注位置)的LEED图像; (c)区域II的LEED图像; (d)使用线偏振态深紫外激光在选定区域((a)图红色线框标记位置)采集的DUV-PEEM图像[69]
Figure 12. (a) UV-PEEM image of FePt film deposited on Pt seed layer with two orientations. LEED patterns of selected areas marked by blue rectangles in panel (a): (b) light area I and (c) dark area II. (d) DUV-PEEM image of the selected area marked by a red dashed rectangle in panel (a) taken with linearly polarized laser[69].
图 13 在同一视野下分别使用(a)左旋与(b)右旋的圆偏振态深紫外激光采集的DUV-PEEM图像; (c)计算得到的MCD磁畴图像; 在同一视野下分别使用偏振方向为(d)竖直与(e)水平的线偏振态激光采集的DUV-PEEM图像; (f)计算所得MLD磁畴图像; (g)磁线二色衬度随激光偏振方向的变化规律[69]
Figure 13. DUV-PEEM images taken with (a) left-circularly polarized and (b) right-circularly polarized light; (c) MCD image of FePt film; (d), (e) DUV-PEEM images taken with linearly-polarized laser (polarization shown by red arrow); (f) MLD image of FePt film; (g) polarization dependent MLD asymmetry for the selected area[69].
Source DUV-DPL Synchrotron radiation Gas discharge laser Energy resolution/meV ~0.26 1—5 ~1.2 Photon circulation 1014—1015 1010—1012 ~1012 Photon flux density/photon·s–1·cm–2 1019—1020 1012—1014 < 1014 Wavelength range/nm 170—210 1—210 58.5 Mode of operation ns, ps, fs pulse ps pulse continuous wave Detection depth/nm ~10 (bulk effect) 0.5—2 (skin effect) ~0.5 (skin effect) -
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