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Based on the Floquet theory and transfer-matrix method, We investigated the influence of light-field on the spin-polarized transport properties for electrons tunneling through two kinds of magnetic-electric barrier structures (the
$\delta$ -doped magnetic-barrier can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure and the light-field can be realized by placing a hemispherical silicon lens on the back surface of the semiconductor substrate). Transport properties result from the interaction of electrons with the light-field by means of photon absorption and emission. It is found that the light-field can greatly affect the transmission probabilities as well as the corresponding polarizations. The distance between the adjacent peaks and the number of the transport peaks can be controlled by adjusting the frequency and the amplitude of the light-field, respectively. It is shown that a significant spin-polarization effect can be induced by such light-field in the kind of antisymmetric magnetic barrier structure ($B_{1}=-B_{2}$ ) and the light-field can greatly change the spin-polarization effect in the kind of symmetric magnetic barrier structure ($B_{1}=B_{2}$ ). When the frequency of the light-field increases, the spin-polarization shifts toward the low-energy end and gradually increases. These remarkable properties of spin polarization may be beneficial for the devising tunable spin filtering devices.-
Keywords:
- spin filtering /
- spin-polarized /
- magnetic-electric barrier /
- light-field
[1] Dubrovin B A, Novikov S P 1980 Sov. Phys. JETP 3 511
[2] Vil'ms P P, Entin M V 1988 Sov. Phys. Semicond. 22 1209
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[35] 曾谨言 2000 量子力学 (卷I) (北京: 科学出版社) 第117页
Zeng J Y 2000 Quantum Mechanics (Vol. 1) (Beijing: Science Press) p117 (in Chinese)
-
图 1 光场
$ V_{1}\cos(\omega t) $ 调制下两类磁电垒结构 (a)反向等强度$ {\text{δ}} $ 型磁电垒结构; (b)同向等强度$ {\text{δ}} $ 型磁电垒结构Figure 1. The model field-driven magnetic-electric barrier structures: (a)
$ B_{1} = -B_{2} $ ; (b)$ B_{1} = B_{2} $ 
图 2 电子隧穿磁垒结构透射几率谱 (a)−(d)反向等强度
$ {\text{δ}} $ 型磁垒结构; (e)−(h)同向等强度$ {\text{δ}} $ 型磁垒结构Figure 2. Transmission probabilities as the function of the incident energy: (a)−(d)
$ B_{1} = -B_{2} = 3 $ ; (e)−(h)$ B_{1} = B_{2} = 3 $ 
图 3 自旋极化度随入射能量的变化 (a)−(b)
$ B_{1} = -B_{2} $ ; (c)−(d)$ B_{1} = B_{2} $ Figure 3. Spin polarization as the function of the incident energy: (a)−(b)
$ B_{1} = -B_{2} $ ; (c)−(d)$ B_{1} = B_{2} $ 
图 4 电子隧穿磁电垒结构透射几率谱 (a)−(d)
$ B_{1} = -B_{2} $ ; (e)−(h)$ B_{1} = B_{2} $ Figure 4. Transmission probabilities as the function of the incident energy: (a)−(d)
$ B_{1} = -B_{2} $ ; (e)−(h)$ B_{1} = B_{2} $ 
图 5 自旋极化度随入射能量的变化关系 (a)−(c)
$ B_{1} = -B_{2} $ ; (d)−(f)$ B_{1} = B_{2} $ Figure 5. Spin polarization as the function of the incident energy: (a)−(c)
$ B_{1} = -B_{2} $ ; (d)−(f)$ B_{1} = B_{2} $ -
[1] Dubrovin B A, Novikov S P 1980 Sov. Phys. JETP 3 511
[2] Vil'ms P P, Entin M V 1988 Sov. Phys. Semicond. 22 1209
[3] Yoshioka D, Iye Y 1987 J. Phys. Soc. Jpn. 56 448
Google Scholar
[4] Peeters F M, Matulis A, Ibrahim I S 1996 Physica B: Condensed Matter 227 131
Google Scholar
[5] Ibrahim I S, Peeters F M 1995 Phys. Rev. B 52 17321
Google Scholar
[6] Guo Y, Gu B L, Duan W H, Zhang Y 1997 Phys. Rev. B 55 9314
Google Scholar
[7] Guo Y, Gu B L, Li Z Q, Yu J Z, Kawazoe Y 1998 J. Appl. Phys. 83 4545
Google Scholar
[8] Guo Y, Gu B L, Li Z Q, Zhu J L, Kawazoe Y 1998 J. Phys. Condens. Matter 10 1549
Google Scholar
[9] Guo Y, Wang H, Gu B L, Kawazoe Y 2000 Phys. Rev. B 61 1728
Google Scholar
[10] Guo Y, Gu B L, Zeng Z, Yu J Z, Kawazoe Y 2000 Phys. Rev. B 62 2635
Google Scholar
[11] Guo Y, Zhai F, Gu B L, Kawazoe Y 2002 Phys. Rev. B 66 045312
Google Scholar
[12] Papp G, Peeters F M 2001 Appl. Phys. Lett. 78 2184
Google Scholar
[13] Xu H Z, Okada Y 2001 Appl. Phys. Lett. 79 3119
Google Scholar
[14] Jiang Y, Jalil M B A, Low T S 2002 Appl. Phys. Lett. 80 1673
Google Scholar
[15] 秦建华, 郭永, 陈信义, 顾秉林 2003 物理学报 52 2569
Google Scholar
Qin J H, Guo Y, Chen X Y, Gu B L 2003 Acta Phys. Sin. 52 2569
Google Scholar
[16] Lu M W, Wang Z Y, Liang Y L, An Y B, Li Q L 2013 Appl. Phys. Lett. 102 022410
Google Scholar
[17] Lu M W, Wang Z Y, Liang Y L, An Y B, Li Q L 2013 Euro. Phys. Lett. 101 47001
Google Scholar
[18] Lu M W, Wang Z Y, Cao X L, Li S 2013 Solid State Commun. 165 45
Google Scholar
[19] Li S, Lu M W, Jiang Y Q, Chen S Y 2014 AIP Adv. 4 097112
Google Scholar
[20] Lu M W, Cao X L, Huang X H, Jiang Y Q, Li S 2014 J. Appl. Phys. 115 174305
Google Scholar
[21] Li C L, Xu Y 2010 Chin. Phys. B 19 057202
Google Scholar
[22] 张存喜, 王瑞, 孔令民 2010 物理学报 59 4980
Google Scholar
Zhang C X, Wang R, Kong L M 2010 Acta Phys. Sin. 59 4980
Google Scholar
[23] Zhang C X, Wang R, Nie Y H, Liang J Q 2008 Chin. Phys. B 17 2662
Google Scholar
[24] Li C L, Ruan R Y, Guo Y 2016 J. Appl. Phys. 119 014306
Google Scholar
[25] Dayem A H, Martin R J 1962 Phys. Rev. Lett. 8 246
Google Scholar
[26] Tien P K, Gordon J P 1963 Phys. Rev. 129 647
Google Scholar
[27] Prez delValle C, Lefebvre R, Atabek O 1999 Phys. Rev. A 59 3701
Google Scholar
[28] Runge E, Ehrenreich H 1992 Phys. Rev. B 45 9145
Google Scholar
[29] Sun Q F, Wang J, Lin T H 2000 Phys. Rev. B 61 12643
Google Scholar
[30] Bruder C, Schoeller H 1994 Phys. Rev. Lett. 72 1076
Google Scholar
[31] Shibata K, Umeno A, Cha K M, Hirakawa K 2012 Phys. Rev. Lett. 109 077401
Google Scholar
[32] Schoelkopf R J, Kozhevnikov A A, Prober D E 1998 Phys. Rev. Lett. 80 2437
Google Scholar
[33] Burmeister G, Maschke K 1998 Phys. Rev. B 57 13050
Google Scholar
[34] Li W J, Reichl L E 1999 Phys. Rev. B 60 15732
Google Scholar
[35] 曾谨言 2000 量子力学 (卷I) (北京: 科学出版社) 第117页
Zeng J Y 2000 Quantum Mechanics (Vol. 1) (Beijing: Science Press) p117 (in Chinese)
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