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Nano-scale particle stripping and inspection on silicon wafer are critical issues for Integrated Circuit(IC) manufacture industry. As more new materials are used in IC manufacture, not only particle itself but also its composition should be inspected. Particles are mainly adhered by the van der waals force. One of potential particle desorption method is laser cleaning which is environment friendly. However, the mechanism of laser cleaning is not clear and more studies should be done for laser ablation. In this paper, the kinetic process of nano particle on silicon wafer induced by nanosecond pulsed laser as well as the on-line detection method of particle composition were studied. A potential method of nano particle dynamic analysis and particle composition inspection were presented. A dual nanosecond pulse laser system both wavelengths at 532 nm is designed in which one laser pumps the particles away from wafer surface almost without damage, the other laser breakdowns the particles in air above the wafer surface to obtain the emission lines of the contaminated particles of 300 nm Cu by a spectroscopy with CCD. Particle motion trail in z direction was observed after laser cleaning by analyzing particle spectral features. The particle dynamic model after stripping was established in which the resistance of air collision and gravity were included. And the model parameters were obtained by calculation using experimental results. The initial velocity of particle at the end of laser pulse and the average acceleration during laser interaction were calculated which were 7.6 m/s and 7.6 × 108 m/s2 respectively. The sensitivity of the dual laser system was evaluated which was between 2.1 × 1013 to 5.1 × 1013 atoms/cm2. As result, it is found that the gravity of the particle should not be ignored and the velocity divergence between different stripping particles is existed. The study not only provides a methodology for the study of laser-induced removal of nano particles on the wafer surface and laser induced nano particle dynamics, but also provides a potential method for the inspection of particle composition and pollution source monitoring on line in integrated circuit manufacture process. As the results were not the optimum one and further study should be done in which a better laser power density should be used.
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Keywords:
- dynamic model of nano particle /
- laser induced breakdown spectroscopy /
- laser cleaning /
- composition inspection
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Tan D H, Lu D S, Song W D, Fan Y C, An C W 1995 Laser Technol. 19 319
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Google Scholar
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Google Scholar
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图 1 激光清洗机理示意图
Figure 1. Schematic diagram of laser cleaning mechanism.
图 2 实验系统示意图
Figure 2. Schematic diagram of experimental system.
图 3 硅片损伤阈值SEM图
Figure 3. SEM image for breakdown threshold of silicon wafer.
图 4 不同激光功率密度下共焦显微镜拍摄图像 (a) 10 × 107 W/cm2; (b) 8 × 107 W/cm2; (c) 6 × 107 W/cm2
Figure 4. Confocal microscope images under different laser power densities: (a) 10 × 107 W/cm2; (b) 8 × 107 W/cm2; (c) 6 × 107 W/cm2.
图 5 铜板LIBS时间演化特征
Figure 5. Time evolution features of LIBS from copper plate.
图 6 空气与样品的LIBS实验结果
Figure 6. LIBS experimental results of air and the sample.
图 7 样品1的延时实验结果 (a) 0−1 ms, (b) 0−30 ms
Figure 7. Delay time experimental results of sample 1: (a) delay time is 0−1 ms, (b) delay time is 0−30 ms.
图 8 延时为1 ms时不同Cu颗粒浓度样品实验结果 (a) 三维光谱强度; (b)峰值光谱强度
Figure 8. Experimental results of Cu particles with different concentrations when delay time was 1 ms: (a) 3D spectral intensity; (b) peak of spectral intensity.
表 1 5种不同浓度样品
Table 1. Five samples of different concentrations.
Sample No. 1 2 3 4 5 Concentration/1013 atoms·cm–2 152 76 38 5.1 2.1 
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表 2 硅片击穿阈值实验结果
Table 2. Experimental results of silicon wafer damage threshold.
Spots No. 1 2 3 4 5 Power density/108 W·cm–2 1.64 1.52 1.32 1.21 1.11
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[1] Zapka W, Ziemlich W 1991 Appl. Phys. Lett. 58 2217
Google Scholar
[2] Hsu S C, Lin J 2006 Optics & Laser Technol. 38 544
[3] Arnold N 2003 Appl. Surf. Sci. 208 15
[4] Grojo D, Cos A, Delaporte P, Sentis M 2006 Appl. Phys. B 84 517
Google Scholar
[5] Mosbacher M, Münzer H J, Zimmermann J, Solis J, Boneberg J, Leiderer P 2001 Appl.Phys. A 72 41
Google Scholar
[6] Mosbacher M, Dobler V, Bertsch M, Munzer J, Boneberg J, Leiderer P 2003 Surf. Contam. Clean. (Vol. 1) (Konstanz: KOPS Press) p17
[7] Seo C, Shin H, Kim D. 2018 Laser Technol.: Applications in Adhesion and Related Areas (Beverly: Scrivener Publishing LLC) pp379–416
[8] 吴东江, 许媛, 王续跃, 康仁科, 司马媛, 胡礼中 2006 光学精密工程 14 765
Wu D J, Xu Y, Wang X Y, Kang R K, Si M Y, Hu L Z 2006 Optics and Precision Engineering 14 765
[9] 谭东晖, 陆冬生, 宋文栋, 范永昌, 安承武 1995 激光技术 19 319
Tan D H, Lu D S, Song W D, Fan Y C, An C W 1995 Laser Technol. 19 319
[10] 谭东晖, 陆冬生, 宋文栋, 安承武 1996 华中理工大学学报 24 50
Tan D H, Lu D S, Song W D, An C W 1996 J. Huazhong Univ. Sci. Technol. 24 50
[11] Meredith B, Scott A 2010 Microelectron. Eng. 87 1701
Google Scholar
[12] Chowdhury V, Simionas D, Fu K, Huang J, Sun P 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) New York, USA, April 30−May 3, 2018 p1109
[13] Chakraborty S, Luz Manalo M, Moideen Ali J, Armin G, Joel B 2017 7th international Conference on Silicon Photovoltaics, SiliconPV Freiburg, Germany, April 3−5, 2017 p24
[14] Ferlito E P, Alnabulsi S, Mello D 2011 Appl. Surf. Sci. 257 9925
Google Scholar
[15] Polignano M L, Borionetti G, Galbiati A, Grasso S, Mica I, Nutsch A 2018 Spectrochim. Acta, Part B 2 117
[16] Ohno R, Saga K 2018 Solid State Phenom. 282 309
Google Scholar
[17] Danel A, Sage S, Barnes J P, Peters D, Spicer R, Bryant R, Newcomb R 2009 Microelectron. Eng. 86 186
Google Scholar
[18] Budri T 2008 Appl. Surf. Sci. 254 4768
Google Scholar
[19] Zanderigo F, Ferrari S, Queirolo G, Pello C, Borgini M 2000 J. Mater. Sci. Eng.B 73 173
Google Scholar
[20] Yang C K, Chi P H, Lin Y C, Sun Y C, Yang M H 2010 Talanta 80 1222
Google Scholar
[21] Rostam-Khani P, Hopstaken M J P, Vullings P, Noij G, Halloran O O, Claassen W 2004 Appl. Surf. Sci. 231 720
[22] Salvatore A, Luisa C, Francesco C, Violeta L, Giorgio M, Pierandrea M, Antonio P, Andrea R, Pawel G, Wojciech G, Monika K 2020 Fusion Eng. Des. 157 111685
Google Scholar
[23] Millar S, Kruschwitz S, Wilsch G 2019 Cem. Concr. Res. 117 16
Google Scholar
[24] Guo L B, Cheng X T, Yun T, Shi S H, Zhong Q L, Lu X Y, Zeng Y F, Xiao Y 2019 Spectrochim. Acta, Part B 152 38
Google Scholar
[25] Xian H, Bakker M C M 2014 Talanta 120 239
Google Scholar
[26] Davari S A, Taylor P A 2019 Talanta 18 192
[27] Romero D, Romero J M F, Laserna J J 1999 J. Anal. At. Spectrom 14 199
Google Scholar
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