Valleytronic properties and devices based on two-dimensional atomic layer materials

Sun Zhen-Hao; Guan Hong-Ming; Fu Lei; Shen Bo; Tang Ning

doi:10.7498/aps.70.20201415

Abstract

Artificial manipulation of electronic degrees of freedom is the key point to realize modern electronic devices. Both charge and spin of electron have been widely studied and applied to logic circuits and information storage devices. Valley, the unique degree of freedom of crystal electrons, has also attracted great attention of the researchers in the past decade. The valleytronics progress benefits from the tremendous improvements of the two-dimensional atomic layer material growth technologies and in-depth explorations of valley properties. Valleytronic materials, represented by two-dimensional transition metal dichalcogenides, have become an excellent platform for the research and design of new electronic devices due to their special optical responses and distinctive electronic transport properties. The valley devices have the advantages of fast operation, low energy consumption, less information loss, high integration and long transmission distance.In this review, we first introduce the basic concepts and properties of the energy valley, such as the valley Hall effect and the valley circular dichroism. Second, we describe the crystal structures and energy band diagrams of the two-dimensional transition metal dichalcogenides. Third, the progress in artificial manipulation of the valley effects is summarized. Some approaches which can break the inversion symmetry and therefore induce the valley degree of freedom are introduced. Fourth, we discuss the methods of realizing valley polarization. Fifth, the developments of valleytronic devices in recent years are reviewed. Finally, a summary and an outlook are given.

Keywords:

two-dimensional transition metal dichalcogenides /
valleytronics

Authors and contacts

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China

Corresponding author: Tang Ning, ntang@pku.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400802, 2018YFB0406603, 2018YFE0125700) and the National Natural Science Foundation of China (Grant Nos. 61574006, 61927806, 61521004, 11634002)

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Cited By

图 1 空间反演对称性破缺的石墨烯的能带(上半部分)和导带轨道磁矩(下半部分). 贝里曲率分布和轨道磁矩类似^[6]

Figure 1. Energy bands (top panel) and orbital magnetic moment of the conduction bands (bottom panel) of a graphene sheet with broken inversion symmetry. The Berry curvature Ω(k) has a distribution similar to that of m(k)^[6].

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图 2 单层器件和双层器件霍尔电压随着源漏偏压的变化关系^[22]

Figure 2. The source-drain bias dependence of the Hall voltage for the monolayer device and bilayer device^[22].

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图 3 单层MoS₂中谷霍尔效应与逆谷霍尔效应导致的能谷流示意图^[26]

Figure 3. Schematic of valley-coupled topological current due to VHE and inverse VHE (iVHE) in monolayer MoS₂^[26].

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图 4 单层MoS₂在83 K下的圆偏振极化PL谱和PL谱的圆偏振极化程度. 红色和蓝色曲线分别对应于发光光谱中${\sigma ^ + }$和${\sigma ^ - }$极化强度, 黑色曲线是净极化的大小^[28]

Figure 4. Circularly polarized micro-PL of monolayer MoS₂ at 83 K, along with the degree of circular polarization of the PL spectra. The red and blue curves correspond to the intensities of ${\sigma ^ + }$ and ${\sigma ^ - }$ polarizations, respectively, in the luminescence spectrum. The black curve is the net degree of polarization^[28].

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图 5 (a)体MoS₂, (b)四层MoS₂, (c)双层MoS₂和(d)单层MoS₂的能带结构. 实心箭头表示最低能量跃迁. 体和多层MoS₂具有间接带隙特性. 对于单层MoS₂, 它变为直接带隙半导体^[42]

Figure 5. Calculated band structures of (a) bulk MoS₂, (b) quadrilayer MoS₂, (c) bilayer MoS₂, and (d) monolayer MoS₂. The solid arrows indicate the lowest energy transitions. Bulk MoS₂ is characterized by an indirect bandgap. For monolayer MoS₂, it becomes a direct bandgap semiconductor^[42].

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图 6 单层到6层MoS₂样品A激子峰强度的归一化PL光谱^[41]

Figure 6. Normalized PL spectra by the intensity of peak A of thin layers of MoS₂ for number of layers = 1–6^[41].

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图 7 635 nm激发下多层MoS₂中光电流与1/4波片角的函数关系　(a)不加离子液体; (b)有离子液体^[68]

Figure 7. Photocurrent as a function of the quarter-wave-plate angle in multilayer MoS₂ under 635 nm excitation: (a) Without the application of ionic liquid; (b) with the application of ionic liquid^[68].

DownLoad: Full-Size Img PowerPoint

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