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Hydrogen plays a crucial role in realizing modern silicon devices. Molecular hydrogen may be found in processes of integrated circuit fabrication and packaging, such as wafer cleaning procedure, film depositions, high- and low-temperature anneal and die attachment by forming gas. It has been shown that hydrogen has strong effects on the total dose and dose rate response to bipolar devices. In order to study the relationship between hydrogen and radiation-induced products, we preform two experiments by using gate-lateral PNP transistors. In the first experiment, one set of devices is soaked in 100% hydrogen gas for 60 h and another set is not soaked, they are together irradiated at 5 rad(Si)/s to a total dose of 50 krad(Si). In the second experiment, devices are irradiated at 50 rad(Si)/s to 100 krad(Si), and then one group is annealed in 100% hydrogen gas and the other is annealed in the air for 40 h at the same temperature. The results show that the damage to devices which are soaked in hydrogen before irradiation is stronger than the devices that are not soaked, the anneal characteristics of devices in hydrogen gas are also changed more greatly than in the air. So the hydrogen can enhance the radiation and anneal damage to bipolar transistors. Using the gate-sweep technique, the radiation-induced products are separated and show that the hydrogen that enters into the transistor will cause the interface traps to increase and oxide trapped charge to decrease. The main reason is that the hydrogen can react with the oxide trapped charge to produce protons which can transport to the Si/SiO2 interface, and then react with H-passivized bond to create interface trap. Based on the reaction mechanism presented in our work, a numerical model of enhanced low dose rate sensitivity including molecular hydrogen reaction and proton generation mechanism is established. The simulation results for the density of interface traps and oxide trapped charge show a trend consistent with the experimental data, which verifies the correctness of the damage mechanism. This research provides not only the basis of the study of damage mechanism of bipolar devices, but also the powerful support for hydrogen soaking irradiation acceleration method.
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Keywords:
- gate-controlled transistor /
- hydrogen /
- enhanced low dose rate sensitivity /
- interface traps /
- oxide trapped charge
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Yao Z B 2014 Ph. D. Dissertation (Xi’an: Northwest Institude of Nuclear Technology) (in Chinese)
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图 1 栅控横向PNP双极晶体管二维结构示意图
Figure 1. Two-dimensional cross section of the gated-lateral PNP transistors.
图 2 氢气浸泡后与未浸泡条件下归一化的晶体管放大倍数随辐照总剂量的变化
Figure 2. Comparison of β/β0 of transistors with/without soaking in 100% H2 under γ-ray irradiated.
图 3 氢气浸泡后与未浸泡条件下, 不同总剂量时的晶体管栅扫描曲线
Figure 3. Gate sweep results from experiments with/without soaking in 100% H2 under γ-ray irradiated.
图 4 氢气浸泡后与未浸泡条件下辐射感生产物面密度随总剂量的变化 (a)界面陷阱; (b)氧化物陷阱电荷
Figure 4. Radiation-induced increases in (a) interface traps and (b) oxide trapped charge with/without soaking in 100% H2 under γ-ray irradiated.
图 5 辐照前、辐照后、以及不同条件下退火后的晶体管栅扫描曲线 (a) 空气中退火; (b) 氢气中退火
Figure 5. Gate sweep results of pre-irradiation, after-irradiation and annealing: (a) In air; (b) in H2.
图 6 辐射感生产物随总剂量和不同条件下退火时间的变化 (a)界面陷阱; (b)氧化物陷阱电荷
Figure 6. Radiation-induced increases in (a) interface traps and (b) oxide trapped charge under annealing in air or 100% H2 for 40 hours.
图 7 氢气氛围中浸泡双极器件损伤增强机理示意图
Figure 7. Schematic diagram of the damage mechansim of bipolar transistors in the hydrogen environment.
图 8 仿真得到的不同氢气浓度下辐照感生面密度随总剂量变化 (a)界面陷阱; (b)氧化物陷阱电荷
Figure 8. Radiation-induced increases in (a) interface traps and (b) oxide trapped charge with different H2 density by simulation.
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[1] Seiler J E, Pease, Platteter D G, Maher, Dunham G W, Pease R L, Maher M C, Shaneyfelt M R 2004 IEEE Radiation Effects Data Workshop Atlanta, USA, July 22, 2004 p42
[2] Shaneyfelt M R, Pease R L, Schwank J R, Maher M C, Hash G L, Fleetwood D M, Dodd P E, Reber C A 2002 IEEE Trans. Nucl. Sci. 49 3171
Google Scholar
[3] Shaneyfelt M R, Pease R L, Maher M C, Schwank J R, Gupta S, Dodd P E, Riewe L C 2003 IEEE Trans. Nucl. Sci. 50 1784
Google Scholar
[4] Adell P C, Rax B, Esqueda I S, Barnaby H J 2015 IEEE Trans. Nucl. Sci. 62 2476
Google Scholar
[5] Pease R L, Adell P C, Rax B G, Chen X J, Barnaby H J, Holbert K E, Hjalmarson H P 2008 IEEE Trans. Nucl. Sci. 55 3169
Google Scholar
[6] Pease R L, Platteter D G, Dunham G W, Seiler J E, Adell P C, Barnaby H J, Chen J 2007 IEEE Trans. Nucl. Sci. 54 2168
Google Scholar
[7] 李小龙, 陆妩, 王信, 郭旗, 何承发, 孙静, 于新, 刘默寒, 贾金成, 姚帅, 魏昕宇 2018 物理学报 67 096101
Google Scholar
Li X L, Lu W, Wang X, Guo Q, He C F, Sun J, Yu X, Liu M H, Jia J C, Yao S, Wei X Y 2018 Acta Phys. Sin. 67 096101
Google Scholar
[8] Boch J, Velo Y G, Saigne F, Roche N J H, Schrimpf R D, Vaille J R, Dusseau L, Chatry C, Lorfevre E, Ecoffet R, Touboul A D 2009 IEEE Trans. Nucl. Sci. 56 3347
Google Scholar
[9] Pease R L, Adell P C, Rax B, McClure S, Barnaby H J, Kruckmeyer K, Triggs B 2010 IEEE Trans. Nucl. Sci. 57 3419
Google Scholar
[10] 赵金宇, 杨剑群, 董磊, 李兴冀 2019 物理学报 68 068501
Google Scholar
Zhao J Y, Yang J Q, Dong L, Li X J 2019 Acta Phys. Sin. 68 068501
Google Scholar
[11] Adell P C, Pease R L, Barnaby H J, Rax B, Chen X J, McClure S S 2009 IEEE Trans. Nucl. Sci. 56 3326
Google Scholar
[12] Chen X J, Barnaby H J, Adell P, Pease, R L, Vermeire B, Holbert K E 2009 IEEE Trans. Nucl. Sci. 56 3196
Google Scholar
[13] Chen X J, Barnaby H J, Vermeire B, Holbert K, Wright D, Pease R L, Dunham G, Platteter D G, Seiler J, McClure S, Adell P 2007 IEEE Trans. Nucl. Sci. 54 1913
Google Scholar
[14] Batyrev I G, Hughart D, Durand R, Bounasser M, Tuttle B R, Fleetwood D M, Schrimpf R D, Rashkeev S N, Dunham G W, Law M, Pantelides S T 2008 IEEE Trans. Nucl. Sci. 55 3039
Google Scholar
[15] Hjalmarson H P, Pease R L, Witczak S C, Shaneyfelt M R, Schwank J R, Edwards A H, Hembree C E, Mattsson T R 2003 IEEE Trans. Nucl. Sci. 50 1901
Google Scholar
[16] Hjalmarson H P, Pease R L, Devine R A B 2008 IEEE Trans. Nucl. Sci. 55 3009
Google Scholar
[17] 席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 物理学报 61 236103
Google Scholar
Xi S B, Lu W, Ren D Y, Zhou D, Wen L, Sun J, Wu X 2012 Acta Phys. Sin. 61 236103
Google Scholar
[18] 马武英, 王志宽, 陆妩, 席善斌, 郭旗, 何承发, 王信, 刘默寒, 姜柯 2014 物理学报 63 116101
Google Scholar
Ma W Y, Wang Z K, Lu W, Xi S B, Guo Q, He C F, Wang X, Liu M H, Jiang K 2014 Acta Phys. Sin. 63 116101
Google Scholar
[19] 姚志斌 2014 博士学位论文 (西安: 西北核技术研究所)
Yao Z B 2014 Ph. D. Dissertation (Xi’an: Northwest Institude of Nuclear Technology) (in Chinese)
[20] Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2001 Phys. Rev. Lett. 87 165501
Google Scholar
[21] 姚志斌, 陈伟, 何宝平, 马武英, 盛江坤, 刘敏波, 王祖军, 金军山, 张帅 2018 原子能科学技术 52 1144
Google Scholar
Yao Z B, Chen W, He B P, Ma W Y, Sheng J K, Liu M B, Wang Z J, Jin J S, Zhang S 2018 Atom. Energ. Sci. Technol. 52 1144
Google Scholar
[22] Rowsey N L, Law M E, Schrimpf R D, Fleetwood D M, Tuttle B R, Pantelides S T 2011 IEEE Trans. Nucl. Sci. 58 2937
Google Scholar
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