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Tang Xiu-Xing, Chen Hong-Yue, Wang Jing-Jing, Wang Zhi-Jun, Zang Du-Yang. Marangoni effect of surfactant droplet in transition boiling and formation of secondary droplet. Acta Physica Sinica,
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Zhang Xiao-Li, Wang Qing-Wei, Yao Wen-Xiu, Shi Shao-Ping, Zheng Li-Ang, Tian Long, Wang Ya-Jun, Chen Li-Rong, Li Wei, Zheng Yao-Hui. Influence of thermal lens effect on second harmonic process in semi-monolithic cavity scheme. Acta Physica Sinica,
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Li Jun-Lin, Li Rui-Bin, Ding Li-Li, Chen Wei, Liu Yan. TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes. Acta Physica Sinica,
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Peng Chao1\2, En Yun-Fei, Li Bin, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Huang Yun. Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
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Li Ming-Liang, Deng Ming-Xi, Gao Guang-Jian. Influences of the interfacial properties on second-harmonic generation by primary circumferential ultrasonic guided wave propagation in composite tube. Acta Physica Sinica,
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Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica,
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Li Duo-Fang, Cao Tian-Guang, Geng Jin-Peng, Zhan Yong. Damage-repair model for mutagenic effects of plant induced by ionizing radiation. Acta Physica Sinica,
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Wu Chuan-Lu, Ma Ying, Jiang Li-Mei, Zhou Yi-Chun, Li Jian-Cheng. Computer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation. Acta Physica Sinica,
doi: 10.7498/aps.63.216102
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Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria. Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica,
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Liu Bi-Wei, Chen Jian-Jun, Chen Shu-Ming, Chi Ya-Qin. NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n+ deep well. Acta Physica Sinica,
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Bao Jun-Lin, Lin Li-Yan, He Liang, Du Lei. Noise as a characteriscic for current transmitting rateof optoelectronic coupled devicesfor ionization radiation damage. Acta Physica Sinica,
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Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo. Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica,
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Jiang Wen-Long, Meng Zhao-Hui, Cong Lin, Wang Jin, Wang Li-Zhong, Han Qiang, Meng Fan-Chao, Gao Yong-Hui. The role of magnetic fields on the efficiency of OLED of double quantum well structures. Acta Physica Sinica,
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Chen Wei-Hua, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Zhang Tian-Fu, Zhang Xue. A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica,
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Sun Guang-Ai, Hu Gang-Yi, Yang Mo-Hua, Xu Shi-Liu, Zhang Zheng-Fan, Liu Yu-Kui, He Kai-Quan, Zhong Yi. Study of conductive property for a N-VDMOS interface trap under X-ray radiation. Acta Physica Sinica,
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Xu Zhi-Jun, Li Peng-Hua. Second interference and amplification effect of a Bose-condensed gas. Acta Physica Sinica,
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Yuan Xian-Zhang, Lu Wei, Li Ning, Chen Xiao-Shuang, Shen Xue-Chu, Zi Jian. Photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetector. Acta Physica Sinica,
doi: 10.7498/aps.52.503
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WEI GUANG-PU. X-RAY IRRADIATION EFFECT IN a-Si SOLAR CELL AND ITS BELOW-GAP PHOTOCURRENT SPECTROSCOPY OBSERVATION. Acta Physica Sinica,
doi: 10.7498/aps.41.485
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ZHANG LIAN-FANG, ZHAO WEN-ZHENG, SHANG REN-CHENG, PAN LI, WANG SHI-LIANG, WEN KE-LING, CHEN DIE-YAN. STUDY OF Ne AUTOIONISING STATES WITH PULSED ELECTRIC FIELD OPTOGALVANIC SPECTROSCOPY. Acta Physica Sinica,
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ZHU ANG-RU, WU XI-LIN. THE MECHANISM OF THE SECONDARY ION EMISSION INVESTIGATED BY THE EFFECT OF ENERGETIC ELECTRONS. Acta Physica Sinica,
doi: 10.7498/aps.33.1475
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