Effect of N
						<sub>2</sub>O treatment on performance of back channel etched metal oxide thin film transistors

Xu Hua; Liu Jing-Dong; Cai Wei; Li Min; Xu Miao; Tao Hong; Zou Jian-Hua; Peng Jun-Biao

doi:10.7498/aps.71.20211350

Search

x

Xu Hua, Liu Jing-Dong, Cai Wei, Li Min, Xu Miao, Tao Hong, Zou Jian-Hua, Peng Jun-Biao. Effect of N2O treatment on performance of back channel etched metal oxide thin film transistorsJ. Acta Physica Sinica, 2022, 71(5): 058503. DOI: 10.7498/aps.71.20211350

Citation:

Xu Hua, Liu Jing-Dong, Cai Wei, Li Min, Xu Miao, Tao Hong, Zou Jian-Hua, Peng Jun-Biao. Effect of N2O treatment on performance of back channel etched metal oxide thin film transistorsJ. Acta Physica Sinica, 2022, 71(5): 058503. DOI: 10.7498/aps.71.20211350

Citation:

Xu Hua, Liu Jing-Dong, Cai Wei, Li Min, Xu Miao, Tao Hong, Zou Jian-Hua, Peng Jun-Biao. Effect of N2O treatment on performance of back channel etched metal oxide thin film transistorsJ. Acta Physica Sinica, 2022, 71(5): 058503. DOI: 10.7498/aps.71.20211350