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Antimony sulfide selenide thin film solar cells have drawn great interest in the field of photovoltaic due to their advantages of simple preparation method, abundant raw materials, non-toxic and stable photoelectric properties. After the development in recent years, the photoelectric conversion efficiency of antimony sulfide selenide solar cells has exceeded 10%, which has great development potential. In this work, the carrier recombination near n/i interface in antimony sulfide selenide solar cells is studied. It is found that the characteristics of the n/i interface are affected by the interfacial electron mobility and energy band structure. The improvement of the interface electron mobility can make the electrons more effectively transferred to the electron transport layer, and realize the effective improvement of the short circuit current density and fill factor of the device. Moreover, the introduction of ZnO/Zn1–xMgxO double electron transport layer structure can further optimize the performance of antimony sulfide selenide solar cells. The change of Zn1–xMgxO energy level position can adjust the energy level distribution of the interface and light absorption layer simultaneously. When the conduction band energy level of Zn1–xMgxO is –4.2 eV and the corresponding Mg content is 20%, the effect of restraining the carrier recombination is the most obvious, and the antimony sulfide selenide solar cell also obtains the best device performance. Finally, under the ideal condition of removing the defect state, the antimony sulfide selenide solar cells with 600 nm in thickness can achieve 20.77% theoretical photoelectric conversion efficiency. The research results provide theoretical and technical support for further optimizing and developing the antimony sulfide selenide solar cells.
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Keywords:
- thin film solar cells /
- antimony sulfide selenide /
- interface characteristics /
- double electron transport layer
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图 4 不同Zn1–xMgxO层导带能级硫硒化锑太阳电池的器件性能 (a) J-V曲线; (b) 能带图; (c) 电子浓度分布; (d) 载流子复合率分布
Figure 4. Device performance of the Sb2(S0.7Se0.3)3 solar cells with different conduction band energy levels of Zn1–xMgxO layer: (a) J-V curves; (b) energy band diagram; (c) electron density distribution; (d) carrier recombination rate distribution.
表 1 不同Zn1–xMgxO层导带能级硫硒化锑太阳电池的器件性能参数
Table 1. Device performance of Sb2(S1–xSex)3 solar cells with different conduction band energy levels of Zn1–xMgxO layer.
导带能级/eV Voc/V Jsc/(mA·cm–2) FF/% PCE/% –4.0 1.08 17.27 60.44 11.23 –4.2 1.08 17.73 61.28 11.70 –4.4 1.08 17.42 58.10 10.90 –4.6 1.07 16.94 54.39 9.83 -
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Google Scholar
Cao Y, Jiang J H, Liu C Y, Ling T, Meng D, Zhou J, Liu H, Wang J Y 2021 Acta Phys. Sin. 70 128802
Google Scholar
[4] Birant G, Wild J De, Kohl T, Buldu D G, Brammertz G, Meuris M, Poortmans J, Vermang B 2020 Sol. Energy 207 1002
Google Scholar
[5] Chen Y, Song K, Xu X L, Yao G, Wu Z Y 2020 Sol. Energy 195 121
Google Scholar
[6] Li D B, Bista S S, Song Z N, Awni R A, Subedi K K, Shrestha N, Pradhan P, Chen L, Bastola E, Grice C R, Phillips A B, Heben M J, Ellingson R J, Yan Y F 2020 Nano Energy 73 104835
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[8] Cao Y, Zhu X Y, Jiang J H, Liu C Y, Zhou J, Ni J, Zhang J J, Pang J B 2020 Sol. Energy Mater. Sol. Cells 206 110279
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[9] Zhou J, Chen H B, Zhang X T, Chi K L, Cai Y M, Cao Y, Pang J B 2021 J. Alloys Compd. 862 158703
Google Scholar
[10] 薛丁江, 石杭杰, 唐江 2015 物理学报 64 038406
Google Scholar
Xue D J, Shi H J, Tang J 2015 Acta Phys. Sin. 64 038406
Google Scholar
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