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Optimization of interfacial characteristics of antimony sulfide selenide solar cells with double electron transport layer structure

Cao Yu Liu Chao-Ying Zhao Yao Na Yan-Ling Jiang Chong-Xu Wang Chang-Gang Zhou Jing Yu Hao

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Optimization of interfacial characteristics of antimony sulfide selenide solar cells with double electron transport layer structure

Cao Yu, Liu Chao-Ying, Zhao Yao, Na Yan-Ling, Jiang Chong-Xu, Wang Chang-Gang, Zhou Jing, Yu Hao
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  • Antimony sulfide selenide thin film solar cells have drawn great interest in the field of photovoltaic due to their advantages of simple preparation method, abundant raw materials, non-toxic and stable photoelectric properties. After the development in recent years, the photoelectric conversion efficiency of antimony sulfide selenide solar cells has exceeded 10%, which has great development potential. In this work, the carrier recombination near n/i interface in antimony sulfide selenide solar cells is studied. It is found that the characteristics of the n/i interface are affected by the interfacial electron mobility and energy band structure. The improvement of the interface electron mobility can make the electrons more effectively transferred to the electron transport layer, and realize the effective improvement of the short circuit current density and fill factor of the device. Moreover, the introduction of ZnO/Zn1–xMgxO double electron transport layer structure can further optimize the performance of antimony sulfide selenide solar cells. The change of Zn1–xMgxO energy level position can adjust the energy level distribution of the interface and light absorption layer simultaneously. When the conduction band energy level of Zn1–xMgxO is –4.2 eV and the corresponding Mg content is 20%, the effect of restraining the carrier recombination is the most obvious, and the antimony sulfide selenide solar cell also obtains the best device performance. Finally, under the ideal condition of removing the defect state, the antimony sulfide selenide solar cells with 600 nm in thickness can achieve 20.77% theoretical photoelectric conversion efficiency. The research results provide theoretical and technical support for further optimizing and developing the antimony sulfide selenide solar cells.
      Corresponding author: Wang Chang-Gang, wangcg@neepu.edu.cn ; Yu Hao, 20182828@neepu.edu.cn
    • Funds: Project supported by the Open Project Fund of National Engineering Laboratory for Digital Construction and Evaluation of Urban Rail Transit (Grant No. 2021HJ05) and the National Natural Science Foundation of China (Grant No. 51772049).
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  • 图 1  Sb2(S0.7Se0.3)3太阳电池的结构示意图

    Figure 1.  Schematic diagram of the Sb2(S0.7Se0.3)3 solar cell structure.

    图 2  不同n/i界面电子迁移率硫硒化锑太阳电池的器件性能 (a)开路电压; (b) 短路电流密度; (c) 填充因子; (d)转换效率

    Figure 2.  Device performance of the Sb2(S0.7Se0.3)3 solar cells with different electron mobilities at n/i interface: (a) Voc; (b) Jsc; (c) FF; (d) PCE.

    图 3  不同n/i界面电子迁移率硫硒化锑太阳电池的器件特性 (a) 电子浓度分布; (b) 载流子复合率分布

    Figure 3.  Device performance of the Sb2(S0.7Se0.3)3 solar cells with different electron mobilities at n/i interface: (a) Electron density distribution; (b) carrier recombination rate distribution.

    图 4  不同Zn1–xMgxO层导带能级硫硒化锑太阳电池的器件性能 (a) J-V曲线; (b) 能带图; (c) 电子浓度分布; (d) 载流子复合率分布

    Figure 4.  Device performance of the Sb2(S0.7Se0.3)3 solar cells with different conduction band energy levels of Zn1–xMgxO layer: (a) J-V curves; (b) energy band diagram; (c) electron density distribution; (d) carrier recombination rate distribution.

    图 5  (a) 不同Zn1–xMgxO层导带能级硫硒化锑太阳电池的PCE; (b) 单电子传输层与双电子传输层硫硒化锑太阳电池的性能对比

    Figure 5.  (a) PCE of the Sb2(S0.7Se0.3)3 solar cells with different conduction band energy levels of Zn1–xMgxO layer; (b) PCE comparison of Sb2(S0.7Se0.3)3 solar cells with single and double electron transport layers.

    图 6  ZnO/Zn0.8Mg0.2O双电子传输层硫硒化锑太阳电池能级示意图

    Figure 6.  Energy levels diagram of the Sb2(S0.7Se0.3)3 solar cell with ZnO/Zn0.8Mg0.2O electron transport layer.

    图 7  ZnO/Zn0.8Mg0.2O双电子传输层硫硒化锑太阳电池的器件性能 (a) J-V曲线; (b) 量子效率图

    Figure 7.  Device performance of the Sb2(S0.7Se0.3)3 solar cells with ZnO/Zn0.8Mg0.2O double electron transport layers: (a) J-V curve; (b) quantum efficiency spectrum.

    表 1  不同Zn1–xMgxO层导带能级硫硒化锑太阳电池的器件性能参数

    Table 1.  Device performance of Sb2(S1–xSex)3 solar cells with different conduction band energy levels of Zn1–xMgxO layer.

    导带能级/eVVoc/VJsc/(mA·cm–2)FF/%PCE/%
    –4.01.0817.2760.4411.23
    –4.21.0817.7361.2811.70
    –4.41.0817.4258.1010.90
    –4.61.0716.9454.399.83
    DownLoad: CSV
  • [1]

    Righetto M, Lim S S, Giovanni D, Lim J W M, Zhang Q, Ramesh S, Tay Y K E, Sum T C 2020 Nat. Commun. 11 1

    [2]

    Metzger W K, Grover S, Lu D, Colegrove E, Moseley J, Perkins C L, Li X, Mallick R, Zhang W, Malik R, Kephart J, Jiang C S, Kuciauskas D, Albin D S, Al-Jassim M M, Xiong G, Gloeckler M 2019 Nat. Energy. 4 837Google Scholar

    [3]

    曹宇, 蒋家豪, 刘超颖, 凌同, 孟丹, 周静, 刘欢, 王俊尧 2021 物理学报 70 128802Google Scholar

    Cao Y, Jiang J H, Liu C Y, Ling T, Meng D, Zhou J, Liu H, Wang J Y 2021 Acta Phys. Sin. 70 128802Google Scholar

    [4]

    Birant G, Wild J De, Kohl T, Buldu D G, Brammertz G, Meuris M, Poortmans J, Vermang B 2020 Sol. Energy 207 1002Google Scholar

    [5]

    Chen Y, Song K, Xu X L, Yao G, Wu Z Y 2020 Sol. Energy 195 121Google Scholar

    [6]

    Li D B, Bista S S, Song Z N, Awni R A, Subedi K K, Shrestha N, Pradhan P, Chen L, Bastola E, Grice C R, Phillips A B, Heben M J, Ellingson R J, Yan Y F 2020 Nano Energy 73 104835Google Scholar

    [7]

    Wang Y R, Gu S, Liu G L, Zhang L P, Liu Z, Lin R X, Xiao K, Luo X, Shi J H, Du J L, Meng F Y, Li L D, Liu Z X, Tan H R 2021 Sci. China Chem. 64 1

    [8]

    Cao Y, Zhu X Y, Jiang J H, Liu C Y, Zhou J, Ni J, Zhang J J, Pang J B 2020 Sol. Energy Mater. Sol. Cells 206 110279Google Scholar

    [9]

    Zhou J, Chen H B, Zhang X T, Chi K L, Cai Y M, Cao Y, Pang J B 2021 J. Alloys Compd. 862 158703Google Scholar

    [10]

    薛丁江, 石杭杰, 唐江 2015 物理学报 64 038406Google Scholar

    Xue D J, Shi H J, Tang J 2015 Acta Phys. Sin. 64 038406Google Scholar

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  • supplement 038802-20211525补充材料.pdf supplement
Metrics
  • Abstract views:  5729
  • PDF Downloads:  123
  • Cited By: 0
Publishing process
  • Received Date:  18 August 2021
  • Accepted Date:  14 September 2021
  • Available Online:  20 January 2022
  • Published Online:  05 February 2022

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