TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes

Li Jun-Lin; Li Rui-Bin; Ding Li-Li; Chen Wei; Liu Yan

doi:10.7498/aps.71.20211691

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Li Jun-Lin, Li Rui-Bin, Ding Li-Li, Chen Wei, Liu Yan. TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodesJ. Acta Physica Sinica, 2022, 71(4): 046104. DOI: 10.7498/aps.71.20211691

Citation:

Li Jun-Lin, Li Rui-Bin, Ding Li-Li, Chen Wei, Liu Yan. TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodesJ. Acta Physica Sinica, 2022, 71(4): 046104. DOI: 10.7498/aps.71.20211691

Citation:

Li Jun-Lin, Li Rui-Bin, Ding Li-Li, Chen Wei, Liu Yan. TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodesJ. Acta Physica Sinica, 2022, 71(4): 046104. DOI: 10.7498/aps.71.20211691