Research progress of tunneling magnetoresistance sensor

Zhou Zi-Tong; Yan Shao-Hua; Zhao Wei-Sheng; Leng Qun-Wen

doi:10.7498/aps.71.20211883

Abstract

Sensors play an important role in Internet of Things (IoT) industry and account for a rapidly growing market share. Among them, the magnetic sensor based on tunneling magnetoresistance (TMR) effect possesses great potential applications in the fields of biomedical, navigation, positioning, current detection, and non-destructive testing due to its extremely high sensitivity, small device size and low power consumption. In this paper, we focus on the development of TMR sensor technology routes, covering a series of research advances from a sensor transducer to three-dimensional magnetic field detection, and then to the applications. Firstly, we recall the development history of TMR sensors, explain its working principle, and discuss the method to improve the output linearity of single magnetic tunnel junction. Next, we state the Wheatstone-bridge structure, which can inhibit temperature drift in detail and review several methods of fabricating the full bridge of TMR sensors. Furthermore, for the market demand of three-dimensional magnetic field detection, we summarize the methods of designing and fabricating three-dimensional sensing structure of the TMR sensor. At the same time, we list several optimization schemes of TMR sensor performance in terms of sensitivity and noise level. Finally, we discuss two types of emerging applications of TMR sensors in recent years. The TMR sensors can also be used in intelligence healthcare due to their ultra-high sensitivity. In addition, devices from the combination of spin materials and MEMS structure have attracted wide attention, especially, because of the large commercial market of microphones, spin-MEMS microphones utilized TMR techniques will be the next research hotspot in this interdisciplinary field.

Keywords:

Authors and contacts

1.
School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
2.
Institute of Beihang-Goertek Microelectronics, Qingdao Research Institute, Beihang University, Qingdao 266000, China

Corresponding author: Zhao Wei-Sheng, weisheng.zhao@buaa.edu.cn ; Leng Qun-Wen, lengqw@bhqditi.com

Funds: Project supported by the Key Research and Development Program of Shandong Province, China (Grant No. 2021CXGC010109), the Beijing Municipal Science and Technology Project, China (Grant No. Z201100004220002), and the International Collaboration Project, China (Grnat No. B16001)

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References

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图 1 磁隧道结　(a) 膜层示意图; (b) R-H曲线图

Figure 1. Magnetic tunnel junction: (a) Schematic diagram of the MTJ stacks; (b) R-H loop curve.

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图 2 TMR传感器的图形化工艺流程图

Figure 2. Flow chart of pattern process of TMR sensors.

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图 3 线性化方案图示　(a) 外加偏置场结构; (b) 强形状各向异性结构; (c) 双钉扎结构; (d) 交叉易磁化轴结构

Figure 3. Linearization scheme diagram: (a) MTJ junction with bias field; (b) MTJ junction with strong shape anisotropic; (c) MTJ junction of double pinning; (d) MTJ junction with linear perpendicular magnetic anisotropy.

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图 4 惠斯通电桥结构示意图

Figure 4. Schematic diagram of the Wheatstone-bridge structure

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图 5 惠斯通全桥制备方法　(a) 机械组装式; (b) 局部退火式; (c) 分区域光刻式; (d) 后退火式

Figure 5. Wheatstone bridge manufacturing method: (a) Mechanical assembly; (b) local annealing; (c) divide different areas for photolithography; (d) annealing after pattern process.

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图 6 组装式三维TMR传感器　(a)传感器结构示意图; (b)带软磁管降噪的三维结构^[38]

Figure 6. Assembled three-dimensional TMR sensor: (a) Schematic diagram of sensor structure; (b) three-dimensional structure with soft magnetic tube for noise reduction^[38].

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图 7 带磁通控制器的三维磁阻式传感器　(a) 传感器结构示意图^[42]; (b) 磁通控制器对于Z轴磁场磁通量的影响^[43]

Figure 7. Three-dimensional TMR sensor with flux guides: (a) Schematic diagram of sensor structure^[42]; (b) effect of flux guides on magnetic flux of Z-axis magnetic field^[43].

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图 8 传感器后端基本电路结构图

Figure 8. Basic back-end circuit diagram of sensor.

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图 9 磁通聚集器的结构图以及周围磁通量分布情况^[52]　(a) 光学显微镜下磁通聚集器和磁隧道结; (b) 磁通聚集器两端的模拟磁通量浓度; (c) 模拟磁通量浓度区域放大图

Figure 9. The structure diagram of the magnetic flux concentrator and the surrounding magnetic flux distribution^[52]: (a) Magnetic flux concentrator and magnetic tunnel junction under light microscope; (b) simulated magnetic flux concentrations at both ends of the flux concentrator; (c) enlarged image of simulated magnetic flux concentration area.

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图 10 噪声功率谱密度曲线　(a) 热噪声和1/f噪声功率谱密度曲线; (b) RTN噪声功率谱密度曲线^[69]

Figure 10. Noise power spectral density curve: (a) Power spectral density curves of thermal noise and 1/ f noise; (b) RTN noise power spectral density curve^[69].

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图 11 通过串并联MTJ来降低噪声的方法

Figure 11. Noise is reduced by series and parallel MTJ.

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图 12 水平运动磁通聚集器原理图^[81]

Figure 12. Schematic diagram of horizontal motion flux concentrator^[81].

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图 13 垂直运动磁通聚集器原理图^[83]　(a) 磁通调制膜靠近间隙; (b) 远离间隙

Figure 13. Schematic diagram of vertical motion flux concentrator^[83]: (a) The state of flux modulated film close to the air gap; (b) the state of flux modulated film far away from the air gap.

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图 14 电调制磁通聚集器原理图^[89]　(a) 电调制磁通聚集器结构图; (b) 电压为0时的磁通分布; (c) 电压为V_i时的磁通分布; (d) 磁通调制膜的磁导率和空气间隙中的磁通量随着电压发生周期性变化

Figure 14. Schematic diagram of magnetic flux electric modulation^[89]: (a) Structure diagram of MFEM; (b) the magnetic flux distribution at voltage = 0; (c) the magnetic flux distribution at voltage = V_i; (d) the permeability of the FXF and the magnetic flux in the air gap change periodically with the voltage.

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图 15 自旋-MEMS麦克风^[106]　(a) 原理图; (b) 版图结构

Figure 15. Spin-MEMS microphone^[106]: (a) Schematic diagram; (b) physical structure.

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图 16 集成TMR传感器的可穿戴眼动仪工作原理^[109]

Figure 16. Working principle diagram of wearable eye tracker integrated with TMR sensor^[109].

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图 17 TMR传感器在心磁图和脑磁图测试中的应用^[110]　(a) 心磁场测试原理图; (b) 脑磁场测试原理图

Figure 17. Application of TMR sensor in magnetocardiogram and magnetoencephalography testing^[110]: (a) Schematic diagram of magnetocardiogram testing; (b) schematic diagram of magnetoencephalography testing.

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表 1 不同磁传感器技术性能对比^[14]

Table 1. Performance comparison of different magnetic sensor technologies^[14].

	HALL	AMR	GMR	TMR
物理效应	霍尔效应	各向异性磁阻效应	巨磁阻效应	隧穿磁阻效应
感应方向	垂直	面内	面内	面内/垂直
最大磁阻率/%	—	2.0^[23]	24^[24]	604^[10,11]
磁场探测范围/T	10^–3—10	10^–9—10^–3	10^–5—10⁴	10^–12—10
退火温度/℃	—	—	220—280	280—340
磁场灵敏度/(mV·V^–¹·Oe^–1)	~0.05	~1	~3	~100
噪声指数/(nT·Hz^–1/2)@1 Hz	>100	0.1—10	1—10	0.01~10
功耗/mA	5—10	1—10	1—10	0.001—0.1
芯片尺寸/mm²	~1×1	~1×1	~0.5×0.5	~0.5×0.5

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