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Sensors play an important role in Internet of Things (IoT) industry and account for a rapidly growing market share. Among them, the magnetic sensor based on tunneling magnetoresistance (TMR) effect possesses great potential applications in the fields of biomedical, navigation, positioning, current detection, and non-destructive testing due to its extremely high sensitivity, small device size and low power consumption. In this paper, we focus on the development of TMR sensor technology routes, covering a series of research advances from a sensor transducer to three-dimensional magnetic field detection, and then to the applications. Firstly, we recall the development history of TMR sensors, explain its working principle, and discuss the method to improve the output linearity of single magnetic tunnel junction. Next, we state the Wheatstone-bridge structure, which can inhibit temperature drift in detail and review several methods of fabricating the full bridge of TMR sensors. Furthermore, for the market demand of three-dimensional magnetic field detection, we summarize the methods of designing and fabricating three-dimensional sensing structure of the TMR sensor. At the same time, we list several optimization schemes of TMR sensor performance in terms of sensitivity and noise level. Finally, we discuss two types of emerging applications of TMR sensors in recent years. The TMR sensors can also be used in intelligence healthcare due to their ultra-high sensitivity. In addition, devices from the combination of spin materials and MEMS structure have attracted wide attention, especially, because of the large commercial market of microphones, spin-MEMS microphones utilized TMR techniques will be the next research hotspot in this interdisciplinary field.
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Keywords:
- tunneling magnetoresistance sensors /
- linearization methods /
- sensor noise /
- intelligent applications
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图 9 磁通聚集器的结构图以及周围磁通量分布情况[52] (a) 光学显微镜下磁通聚集器和磁隧道结; (b) 磁通聚集器两端的模拟磁通量浓度; (c) 模拟磁通量浓度区域放大图
Figure 9. The structure diagram of the magnetic flux concentrator and the surrounding magnetic flux distribution[52]: (a) Magnetic flux concentrator and magnetic tunnel junction under light microscope; (b) simulated magnetic flux concentrations at both ends of the flux concentrator; (c) enlarged image of simulated magnetic flux concentration area.
图 14 电调制磁通聚集器原理图[89] (a) 电调制磁通聚集器结构图; (b) 电压为0时的磁通分布; (c) 电压为Vi时的磁通分布; (d) 磁通调制膜的磁导率和空气间隙中的磁通量随着电压发生周期性变化
Figure 14. Schematic diagram of magnetic flux electric modulation[89]: (a) Structure diagram of MFEM; (b) the magnetic flux distribution at voltage = 0; (c) the magnetic flux distribution at voltage = Vi; (d) the permeability of the FXF and the magnetic flux in the air gap change periodically with the voltage.
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