Facilitation of compliance current for resistive switching and stability of Ta/BaTiO3/Al2O3/ITO

He Chao-Tao; Lu Yu; Li Xiu-Lin; Chen Peng

doi:10.7498/aps.71.20211999

Abstract

In this work, Ta/BaTiO₃/Al₂O₃ multi-layer thin film is deposited on indium tin oxide substrates by using the magnetron sputtering technology. Obvious resistive switching performance can be observed by increasing the compliance current. Ohmic and space charge limited current conduction mechanisms are demonstrated in Ta/BaTiO₃/Al₂O₃. The reproducible and stable resistive switching behaviors in Ta/BaTiO₃/Al₂O₃/ITO device at I_cc = 10^–2 A are reported. The results show that no obvious degradation is found after 365 successive cycles tests.

Keywords:

Authors and contacts

School of Physics Science and Technology, Southwest University, Chongqing 400715, China

Corresponding author: Chen Peng, pchen@swu.edu.cn

FullText HTML : translate this paragraph

References

[1]	Hu Z Q, Li Q, Li M Y, Wang Q W, Zhu Y D, Zhao X Z, Liu Y, Dong S X 2013 Appl. Phys. Lett. 102 102901 Google Scholar
[2]	Zhou G D, Sun B, Hu X, Sun L, Zou Z, Xiao B, Qiu W, Wu B, Li J, Han J, Liao L, Xu C, Xiao G, Xiao L, Cheng J, Zheng S, Wang L, Song Q, Duan S 2021 Adv. Sci. 8 2003765 Google Scholar
[3]	Sun B, Zhao W X, Liu Y H, Chen P 2015 Funct. Mater. Lett. 8 1550010 Google Scholar
[4]	Wang J S, Liang D D, Wu L C, Li X P, Chen P 2018 Solid State Commun. 275 8 Google Scholar
[5]	Lee J S, Lee S, Noh T W 2015 Appl. Phys. Rev. 2 031303 Google Scholar
[6]	Lacaita A L, Wouters D J 2008 Phys. Stat. Sol. A 205 2281
[7]	Jeong D S, Thomas R, Katiyar R S, Scott J F, Kohlstedt H, A Petraru A, Hwang C S 2012 Rep. Prog. Phys. 75 076502 Google Scholar
[8]	Kumar P, Maikap S, Ginnaram S, Qiu J T, Jana D, Chakrabarti S, Samanta S, S Singh S, Roy A, Jana S 2017 J. Electrochem. Soc. 164 B127 Google Scholar
[9]	Petzold S, Zintler A, Eilhardt R, Piros E, Kaiser N, Sharath S U, Vogel T, Major Má, McKenna K P, Molina-Luna L, Alff L 2019 Adv. Electron. Mater. 5 1900484
[10]	Hsieh W K, Lam KT, Chang S J 2015 Mater. Sci. Semicon. Proc. 35 30 Google Scholar
[11]	Scott J C, Bozano L D 2007 Adv. Mater. 19 1452 Google Scholar
[12]	Lai R L, Wei M L, Wang J B, Zhou K, Qiu X Y 2021 J. Phys. D: Appl. Phys. 54 015101 Google Scholar
[13]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632 Google Scholar
[14]	Guo T, Sun B, Ranjan S, Jiao Y, Wei L, Zhou Y N, Wu Y A 2020 ACS Appl. Mater. Inter. 12 54243 Google Scholar
[15]	Sun B, Zhou G D, Guo T, Zhou Y N, Wu Y A 2020 Nano Energy 75 104938 Google Scholar
[16]	Tsai T M, Lin C C, Chen W C, Wu C H, Yang C C, Tan Y F, Wu P Y, Huang H C, Zhang Y C, Sun L C, Chou S Y 2020 J. Alloy. Compd. 826 154126 Google Scholar
[17]	Saylan S, Aldosari H M, Humood K, Jaoude M A, Ravaux F, Mohammad B 2020 Sci. Rep-UK 10 19541 Google Scholar
[18]	Chen R, Hu W, Zou L, Xie W, Li B, Bao D 2014 Appl. Phys. Lett. 104 242111 Google Scholar
[19]	Choi H H, Paik S H, Kim Y, Kim M, Kang Y S, Lee S S, Jho J Y, Park J H 2021 J. Ind. Eng. Chem. 94 233 Google Scholar
[20]	Strachan J P, Strukov D B, Borghetti J, Yang J J, Medeiros-Ribeiro G, Williams R S 2011 Nanotechnology 22 254015 Google Scholar
[21]	Tang Y, Zhang X, Lu Y, Chen P 2021 Functional Mater. Lett. 14 2150025 Google Scholar
[22]	Liu C F, Tang X G, Wang L Q, Tang H, Jiang Y P, Liu Q X, Li W H, Tang Z H 2019 Nanomaterials 9 1124 Google Scholar
[23]	Hu C, Wang Q, Bai S, Xu M, He D, Lyu D, Qi J 2017 Appl. Phys. Lett. 110 073501 Google Scholar
[24]	Kim H D, Kim S, Yun M J 2018 J. Alloy. Compd. 742 822 Google Scholar
[25]	Zhou G D, Duan S, Li P, et al. 2018 Adv. Electron. Mater. 1700567
[26]	Liu H C, Tang X G, Liu Q X, Jiang Y P, Li W H, Guo X B, Tang Z H 2020 Ceram. Int. 46 21196 Google Scholar
[27]	Pan X, Shuai Y, Wu C, Luo W, Sun X, Zeng H, Guo H, Yuan Y, Zhou S, Böttger R, Cheng H, Zhang J, Zhang W, Schmidt H 2019 Solid State Ionics 334 1 Google Scholar
[28]	Lü W, Li C, Zheng L, Xiao J, Lin W, Li Q, Wang X R, Huang Z, Zeng S, Han K, Zhou W, Zeng K, Chen J, Ariando, Cao W, Venkatesan T 2017 Adv. Mater. 29 1606165 Google Scholar
[29]	Wei L J, Yuan Y, Wang J, Tu H Q, Gao H Q, You B, Du J 2017 Phys. Chem. Chem. Phys. 19 11864 Google Scholar
[30]	Wang Y H, Zhao K H, Shi X L, Xie G L, Huang S Y, Zhang L W 2013 Appl. Phys. Lett. 103 031601 Google Scholar
[31]	Razi P M, Gangineni R B 2019 Thin Solid Films 685 59 Google Scholar
[32]	Wang G, Hu L, Xia Y, Li Q, Xu Q 2020 J. Magn. Magn. Mater. 493 165728 Google Scholar
[33]	Chen Y T, Chang T C, Yang P C, Huang J J, Tseng H C, Huang H C, Yang J B, Chu A K, Gan D S, Tsai M J, Sze S M 2013 IEEE Electr. Device Lett. 34 226 Google Scholar
[34]	Liu Y D, Hu C Z, Wang J J, Zhong N, Xiang P H, Duan C G 2020 J. Mater. Chem. C. 8 5815 Google Scholar
[35]	Sharath S U, Vogel S, Molina-Luna L, Hildebrandt E, Wenger C, Kurian J, Duerrschnabel M, Niermann T, Niu G, Calka P, Lehmann M, Kleebe H J, Schroeder T, Alff L 2017 Adv. Funct. Mater. 27 1700432 Google Scholar

Cited By

图 1 (a) Ta/BaTiO₃/Al₂O₃/ITO器件XRD图, 插图为器件结构示意图; (b)器件截面示意图; (c) Ta电极表面SEM扫描图片, 插图为EDS原子百分比分析结果

Figure 1. (a) XRD pattern of Ta/BaTiO₃/Al₂O₃/ITO device, the inset shows the schematic diagram of the device; (b) SEM cross-sectional image of the device; (c) SEM image of Ta surface, the insert is the result of EDS analysis.

DownLoad: Full-Size Img PowerPoint

图 2 (a) Ta/BaTiO₃/Al₂O₃/ITO器件在I_cc= 10^–3, 5 × 10^–3, 10^–2 A下的电阻开关; (b) 50个器件中部分器件的I-V曲线图

Figure 2. (a) The RS behaviors of the Ta/BaTiO₃/Al₂O₃/ITO device with I_cc= 10^–3, 5 × 10^–3, 10^–2 A; (b) I-V characteristic curves for some cells of the fifty devices.

DownLoad: Full-Size Img PowerPoint

图 3 Ta/BaTiO₃/Ta器件的I-V特性, 插图为器件结构示意图

Figure 3. The I-V curves measured for the Ta/BaTiO₃/Ta device, the inset is schematic figure for stacked structures of the device.

DownLoad: Full-Size Img PowerPoint

图 4 I_cc= 10^–2 A, Ta/BaTiO₃/Al₂O₃/ITO器件相关特征的拟合结果　(a) I-V; (b) I-V²(高偏压区域);

Figure 4. I_cc= 10^–2 A, the fitting result for characteristics of the Ta/BaTiO₃/Al₂O₃/ITO device: (a) I-V; (b) I-V² (high-voltage region)

DownLoad: Full-Size Img PowerPoint

图 5 Ta/BaTiO₃/Al₂O₃/ITO器件中电阻开关的原理示意图

Figure 5. The schematic diagrams of the RS in the Ta/BaTiO₃/Al₂O₃/ITO device.

DownLoad: Full-Size Img PowerPoint

图 6 (a) I_cc= 10^–2 A, Ta/BaTiO₃/Al₂O₃/ITO器件连续循环100圈后LRS和HRS变化情况; (b) 器件循环365圈中RS现象的随机选取

Figure 6. (a) The resistance evolution of HRS and LRS for the Ta/BaTiO₃/Al₂O₃/ITO device with I_cc= 10^–2 A; (b) the continuous endurance measurements for the device.

DownLoad: Full-Size Img PowerPoint

[1]	Hu Z Q, Li Q, Li M Y, Wang Q W, Zhu Y D, Zhao X Z, Liu Y, Dong S X 2013 Appl. Phys. Lett. 102 102901 Google Scholar
[2]	Zhou G D, Sun B, Hu X, Sun L, Zou Z, Xiao B, Qiu W, Wu B, Li J, Han J, Liao L, Xu C, Xiao G, Xiao L, Cheng J, Zheng S, Wang L, Song Q, Duan S 2021 Adv. Sci. 8 2003765 Google Scholar
[3]	Sun B, Zhao W X, Liu Y H, Chen P 2015 Funct. Mater. Lett. 8 1550010 Google Scholar
[4]	Wang J S, Liang D D, Wu L C, Li X P, Chen P 2018 Solid State Commun. 275 8 Google Scholar
[5]	Lee J S, Lee S, Noh T W 2015 Appl. Phys. Rev. 2 031303 Google Scholar
[6]	Lacaita A L, Wouters D J 2008 Phys. Stat. Sol. A 205 2281
[7]	Jeong D S, Thomas R, Katiyar R S, Scott J F, Kohlstedt H, A Petraru A, Hwang C S 2012 Rep. Prog. Phys. 75 076502 Google Scholar
[8]	Kumar P, Maikap S, Ginnaram S, Qiu J T, Jana D, Chakrabarti S, Samanta S, S Singh S, Roy A, Jana S 2017 J. Electrochem. Soc. 164 B127 Google Scholar
[9]	Petzold S, Zintler A, Eilhardt R, Piros E, Kaiser N, Sharath S U, Vogel T, Major Má, McKenna K P, Molina-Luna L, Alff L 2019 Adv. Electron. Mater. 5 1900484
[10]	Hsieh W K, Lam KT, Chang S J 2015 Mater. Sci. Semicon. Proc. 35 30 Google Scholar
[11]	Scott J C, Bozano L D 2007 Adv. Mater. 19 1452 Google Scholar
[12]	Lai R L, Wei M L, Wang J B, Zhou K, Qiu X Y 2021 J. Phys. D: Appl. Phys. 54 015101 Google Scholar
[13]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632 Google Scholar
[14]	Guo T, Sun B, Ranjan S, Jiao Y, Wei L, Zhou Y N, Wu Y A 2020 ACS Appl. Mater. Inter. 12 54243 Google Scholar
[15]	Sun B, Zhou G D, Guo T, Zhou Y N, Wu Y A 2020 Nano Energy 75 104938 Google Scholar
[16]	Tsai T M, Lin C C, Chen W C, Wu C H, Yang C C, Tan Y F, Wu P Y, Huang H C, Zhang Y C, Sun L C, Chou S Y 2020 J. Alloy. Compd. 826 154126 Google Scholar
[17]	Saylan S, Aldosari H M, Humood K, Jaoude M A, Ravaux F, Mohammad B 2020 Sci. Rep-UK 10 19541 Google Scholar
[18]	Chen R, Hu W, Zou L, Xie W, Li B, Bao D 2014 Appl. Phys. Lett. 104 242111 Google Scholar
[19]	Choi H H, Paik S H, Kim Y, Kim M, Kang Y S, Lee S S, Jho J Y, Park J H 2021 J. Ind. Eng. Chem. 94 233 Google Scholar
[20]	Strachan J P, Strukov D B, Borghetti J, Yang J J, Medeiros-Ribeiro G, Williams R S 2011 Nanotechnology 22 254015 Google Scholar
[21]	Tang Y, Zhang X, Lu Y, Chen P 2021 Functional Mater. Lett. 14 2150025 Google Scholar
[22]	Liu C F, Tang X G, Wang L Q, Tang H, Jiang Y P, Liu Q X, Li W H, Tang Z H 2019 Nanomaterials 9 1124 Google Scholar
[23]	Hu C, Wang Q, Bai S, Xu M, He D, Lyu D, Qi J 2017 Appl. Phys. Lett. 110 073501 Google Scholar
[24]	Kim H D, Kim S, Yun M J 2018 J. Alloy. Compd. 742 822 Google Scholar
[25]	Zhou G D, Duan S, Li P, et al. 2018 Adv. Electron. Mater. 1700567
[26]	Liu H C, Tang X G, Liu Q X, Jiang Y P, Li W H, Guo X B, Tang Z H 2020 Ceram. Int. 46 21196 Google Scholar
[27]	Pan X, Shuai Y, Wu C, Luo W, Sun X, Zeng H, Guo H, Yuan Y, Zhou S, Böttger R, Cheng H, Zhang J, Zhang W, Schmidt H 2019 Solid State Ionics 334 1 Google Scholar
[28]	Lü W, Li C, Zheng L, Xiao J, Lin W, Li Q, Wang X R, Huang Z, Zeng S, Han K, Zhou W, Zeng K, Chen J, Ariando, Cao W, Venkatesan T 2017 Adv. Mater. 29 1606165 Google Scholar
[29]	Wei L J, Yuan Y, Wang J, Tu H Q, Gao H Q, You B, Du J 2017 Phys. Chem. Chem. Phys. 19 11864 Google Scholar
[30]	Wang Y H, Zhao K H, Shi X L, Xie G L, Huang S Y, Zhang L W 2013 Appl. Phys. Lett. 103 031601 Google Scholar
[31]	Razi P M, Gangineni R B 2019 Thin Solid Films 685 59 Google Scholar
[32]	Wang G, Hu L, Xia Y, Li Q, Xu Q 2020 J. Magn. Magn. Mater. 493 165728 Google Scholar
[33]	Chen Y T, Chang T C, Yang P C, Huang J J, Tseng H C, Huang H C, Yang J B, Chu A K, Gan D S, Tsai M J, Sze S M 2013 IEEE Electr. Device Lett. 34 226 Google Scholar
[34]	Liu Y D, Hu C Z, Wang J J, Zhong N, Xiang P H, Duan C G 2020 J. Mater. Chem. C. 8 5815 Google Scholar
[35]	Sharath S U, Vogel S, Molina-Luna L, Hildebrandt E, Wenger C, Kurian J, Duerrschnabel M, Niermann T, Niu G, Calka P, Lehmann M, Kleebe H J, Schroeder T, Alff L 2017 Adv. Funct. Mater. 27 1700432 Google Scholar

[1]	Feng Jia-Feng, Wei Hong-Xiang, Yu Guo-Qiang, Huang Hui, Guo Jing-Hong, Han Xiu-Feng. Exchange bias effect of current Joule thermally modulated inverted vertical (Co/Pt) n/Co/IrMn nanomultilayers. Acta Physica Sinica, 2023, 72(1): 018501. doi: 10.7498/aps.72.20221584
[2]	Zhang Xing-Wen, He Chao-Tao, Li Xiu-Lin, Qiu Xiao-Yan, Zhang Yun, Chen Peng. Resistance switching effect regulated by magnetic field in Ni/ZnO/BiFeO₃/ZnO multilayers. Acta Physica Sinica, 2022, 71(18): 187303. doi: 10.7498/aps.71.20220609
[3]	She Yan-Chao, Zhang Wei-Xi, Wang Ying, Luo Kai-Wu, Jiang Xiao-Wei. Effect of oxygen vacancy defect on leakage current of PbTiO3 ferroelectric thin film. Acta Physica Sinica, 2018, 67(18): 187701. doi: 10.7498/aps.67.20181130
[4]	Li Ping, Xu Yu-Tang. Monte Carlo simulation of time-dependent dielectric breakdown of oxide caused by migration of oxygen vacancies. Acta Physica Sinica, 2017, 66(21): 217701. doi: 10.7498/aps.66.217701
[5]	Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang. Research progress of memristors and memristive mechanism. Acta Physica Sinica, 2014, 63(18): 187301. doi: 10.7498/aps.63.187301
[6]	Wei Xiao-Ying, Hu Ming, Zhang Kai-Liang, Wang Fang, Liu Kai. Micro-structural and resistive switching properties of vanadium oxide thin films. Acta Physica Sinica, 2013, 62(4): 047201. doi: 10.7498/aps.62.047201
[7]	Li Hong-Xia, Chen Xue-Ping, Chen Qi, Mao Qi-Nan, Xi Jun-Hua, Ji Zhen-Guo. Effects of bottom electrode on resistive switching characteristics of ZnO films. Acta Physica Sinica, 2013, 62(7): 077202. doi: 10.7498/aps.62.077202
[8]	Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong. Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica, 2012, 61(14): 147801. doi: 10.7498/aps.61.147801
[9]	Yu Huang-Zhong. Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica, 2012, 61(8): 087204. doi: 10.7498/aps.61.087204
[10]	Li Fei, Xiao Liu, Liu Pu-Kun, Yi Hong-Xia, Wan Xiao-Sheng. Simple theory of space-charge-limited current between concentric sphere. Acta Physica Sinica, 2011, 60(9): 097901. doi: 10.7498/aps.60.097901
[11]	Bao Bo-Cheng, Zhou Guo-Hua, Xu Jian-Ping, Liu Zhong. Dynamical modeling and analysis of current mode controlled switching converter with ramp compensation. Acta Physica Sinica, 2010, 59(6): 3769-3777. doi: 10.7498/aps.59.3769
[12]	Zhao Hong-Dong, Zhang Wei-Hua, Li Wen-Chao, Liu Hui-Li, Sun Mei. Influence of current aperture size on threshold in double oxide confined vertical-cavity surface-emitting lasers. Acta Physica Sinica, 2010, 59(6): 3948-3952. doi: 10.7498/aps.59.3948
[13]	Zhu Zhang-Ming, Zhong Bo, Yang Yin-Tang. An accurate Joule heat model of RLC interconnect based on π equivalent circuit. Acta Physica Sinica, 2010, 59(7): 4895-4900. doi: 10.7498/aps.59.4895
[14]	Zhao Wen-Shan, He Yi-Gang. An improved method for implementation of wavelet transform utilizing switched-current filters. Acta Physica Sinica, 2009, 58(2): 843-851. doi: 10.7498/aps.58.843
[15]	Shi Wei, Tian Li-Qiang, Wang Xin-Mei, Xu Ming, Ma De-Ming, Zhou Liang-Ji, Liu Hong-Wei, Xie Wei-Ping. A high-voltage and high-current photoconductive semiconductor switch and its breakdown characteristics. Acta Physica Sinica, 2009, 58(2): 1219-1223. doi: 10.7498/aps.58.1219
[16]	Gang Jian-Lei, Li Song-Lin, Meng Yang, Liao Zhao-Liang, Liang Xue-Jin, Chen Dong-Min. Reproducible low-current resistive switching of metal/Pr0.7Ca0.3MnO3/Pt junctions with a point-contact top electrode. Acta Physica Sinica, 2009, 58(8): 5730-5735. doi: 10.7498/aps.58.5730
[17]	Hu Qin-Chun, He Yi-Gang, Guo Di-Xin, Li Hong-Min. Analog implementation of wavelet transform based on switched-current filter circuits. Acta Physica Sinica, 2006, 55(2): 641-647. doi: 10.7498/aps.55.641
[18]	Qu Guang-Hui, Shi Wei. Inductive current and conductive current in photoconductor switches. Acta Physica Sinica, 2006, 55(11): 6068-6072. doi: 10.7498/aps.55.6068
[19]	BAD KE-DA, XIONG JIA-JIONG. INVESTIGATION OF THE LARGEST CURRENT IN A RANDOM RESISTOR NETWORK. Acta Physica Sinica, 1990, 39(8): 121-127. doi: 10.7498/aps.39.121
[20]	HWA C. Y., WANG S. Y., CHANG Z. C.. ULTRA-HIGH VACUUM IONIZATION GAUGES WITH DIRECTLY HEATED ELECTRODES. Acta Physica Sinica, 1963, 19(2): 83-89. doi: 10.7498/aps.19.83

Catalog

Vol. 71, Issue 8 - 2022-04-20

Metrics

Abstract views: 4817
PDF Downloads: 133
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Facilitation of compliance current for resistive switching and stability of Ta/BaTiO₃/Al₂O₃/ITO