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Molybdenum disulfide is a layered transition metal chalcogenide semiconductor. It has many applications in the fields of two-dimensional spintronics, valleytronics and optoelectronics. In this review, molybdenum disulfide is taken as a representative to systematically introduce the energy band structures of single layer, bilayer and twisted bilayer molybdenum disulfide, as well as the latest experimental progress of its realization and low-temperature electrical transport, such as superconductivity and strong correlation phenomenon. Finally, two-dimensional transition metal chalcogenide moiré superlattice’s challenges in optimizing contact and sample quality are analyzed and the future development of this field is also presented.
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图 1 单层二硫化钼 (a) 2H相原子结构示意图[36]; (b) 准粒子自洽格林函数方法计算得到的能带结构[37]; (c) 荧光谱[42]; (d) 朗道扇形图[58]; (e) 谷霍尔效应示意图
Figure 1. Single layer molybdenum disulfide: (a) Schematic diagram of atomic structure of 2H phase[36]; (b) energy band structure obtained by quasiparticle self-consistent GW (QSGW) method [37]; (c) photoluminescence spectra[42]; (d) Landau fan[58]; (e) schematic of valley hall effect.
图 2 双层二硫化钼的能带结构与物性 (a) 本征双层二硫化钼的原子结构示意图; (b) 准粒子自洽格林函数方法计算得到的能带结构图[37]; (c) 电场可调的谷霍尔效应[72]; (d) 转角双层二硫化钼中的莫尔超晶格结构[88]; (e) 2.65°转角的双层二硫化钼的价带能带结构[88]; (f) 非平庸的拓扑子能带[100]
Figure 2. Bilayer molybdenum disulfide’s band structure and physical properties: (a) Atomic structure of natural double-layer molybdenum disulfide; (b) QSGW calculated band structure[37]; (c) electric field tunable valley Hall effect[72]; (d) moiré superlattice in twisted bilayer molybdenum disulfide[88]; (e) valence band structure of twisted bilayer molybdenum disulfide with 2.65°[88]; (f) non-trivial topological flat bands[100].
图 3 精准制备不同转角的多层同质结 (a), (e)“捡起堆叠”法示意图, 红色框表示半球形基板的放大视图[109]; (b)—(d) 示意图过程和 (f)—(h) 相应步骤的光学结果, (b) 和 (f) 表示基板和底部单层石墨烯的部分接触[109]; (i) 利用聚二甲基硅氧烷 (PDMS) 作为媒介, 将分割好的定向单层二硫化钼堆叠成所需转角[108]; (j) 在沉积300 nm二氧化硅的硅衬底上, 具有精确控制的转角多层MoS2薄膜[108]
Figure 3. Twist angle engineering of multilayer homostructures. (a), (e) Schematic of layer pick-up. The red box represents a zoom-in view of the hemispherical handle substrate[109]. (b)–(d) Schematics and (f)–(h) corresponding optical micrographs of successive stacking steps. Panels (b) and (f) illustrate a partial contact of the handle with the bottom graphene[109]. (i) The water-assisted transfer process. Polydimethylsiloxane (PDMS) are used as transfer medium[108]. (j) Image of multilayer MoS2 films with precise-controlled twist angles on Si substrates with 300 nm SiO2[108].
图 4 转角双层二硫化钼中可能存在的强关联现象 (a) 关联绝缘态, 红线代表莫特绝缘态; 蓝色区域代表电荷局域态与费米液体共存的状态, 称为轨道选择性莫特态; 黑色虚线内代表近藤晶格模型[101]; (b) 整数填充附近的超导相变; (c)量子反常霍尔效应; (d) 魏格纳晶格态, 图(d)表示了2/3电子填充态[123]; (e) 量子临界行为, 红色和蓝色区域表示电阻随温度的依赖关系, 其中α ≠ β
Figure 4. Strong correlation phenomenon predicted in twisted bilayer MoS2. (a) Schematic phase diagram. A charge localized state of one species can coexist with a Fermi liquid state of the other, which is known as the orbitally selective Mott (OSM) state. Inside the region marked by the dashed black line the essential ingredients of a Kondo lattice model are realized. The red lines indicate correlated insulating states[101]. (b) Superconductivity in the doped Mott insulator. (c) Quantum anomalous Hall effect. (d) Wigner Crystal state. The figure shows representative 2/3 electron filling[123]. (e) Quantum critical behaviors in which α≠β. The blue and red regions indicate the resistance dependence on temperature.
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