<i>In-situ</i> high pressure polarized Raman spectroscopy of rhenium disulfide

Zhang Mao-Di; Jiao Chen-Yin; Wen Ting; Li Jing; Pei Sheng-Hai; Wang Zeng-Hui; Xia Juan

doi:10.7498/aps.71.20220053

Abstract

Pressure engineering is known as an efficient, continuous and reversible technique capable of tuning material structure, as well as its electrical, optical, and other physical properties. Raman spectroscopy is used to perform efficient and non-destructive analysis of material structure, and is compatible with the application of external tuning fields. In this work, we combine in-situ pressure engineering and polarized Raman spectroscopy to study the pressure-induced evolution of 18 Raman-active modes in ReS₂ crystal. We find that the ReS₂ undergoes a structural transformation from 1T' to a distorted-1T' phase at 3.04 GPa, followed by an intralayer deformation of Re₄ clusters occurring at 14.24 GPa. Interlayer transitions from disordered to ordered stacking in different in-plane directions are observed at 22.08 GPa and 25.76 GPa when the laser is polarized in different directions, which reflects the pressure-enhanced in-plane anisotropy, i.e. the anisotropy of ReS₂ crystal becomes more prominent under high pressure. Our findings demonstrate the effectiveness of pressure in tuning material properties, and shed light on potential applications of ReS₂ crystals in anisotropic optical and optoelectronic devices.

Keywords:

Authors and contacts

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

Corresponding author: Wang Zeng-Hui, zenghui.wang@uestc.edu.cn ; Xia Juan, juanxia@uestc.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62150052, 62004026), the National Key R&D Program of China (Grant No. 2019YFE0120300), and the Science and Technology Department of Sichuan Province, China (Grant Nos. 2021YJ0517, 21CXTD0088).

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References

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Cited By

图 1 (a) 原位高压偏振拉曼光谱系统测试图; (b) ReS₂薄片的光学照片, 绿色箭头为入射激光的两个正交偏振方向; (c) 封装样品后的金刚石对顶砧示意图; (d) ReS₂晶体结构俯视图, 黑色矩形示意为结构中的铼链, θ为入射激光偏振方向与ReS₂晶体b轴的夹角, $\otimes $为激光与原子面垂直的入射方向; (e) ReS₂晶体结构侧视图

Figure 1. (a) Schematic illustration of the in-situ high pressure polarized Raman measurement system; (b) optical image of the ReS₂ flake being measured (The green arrows indicate the polarization directions of the incident laser); (c) illustration of a diamond anvil cell (DAC) loaded with the ReS₂ sample; (d) top view of the ReS₂ crystal structure (The black rectangle indicates the Re-Re chain. θ is defined as the angle between the polarization of the incident laser and the b-axis of ReS₂. $\otimes $ represents the incident direction of the laser (into the page)); (e) side view of the ReS₂ crystal structure.

DownLoad: Full-Size Img PowerPoint

图 2 两种正交入射激光偏振方向下ReS₂的拉曼光谱, 入射激光波长为532 nm; α为入射激光偏振方向(白色箭头)相对于实验台坐标轴x (白色虚线)的夹角, 蓝色为α = 0°, 红色为α = 90°

Figure 2. Raman spectra of an ReS₂ flake with the incident laser polarized parallel (top, α = 0°) and perpendicular (bottom, α = 90°) to the x-axis of the experimental system. The wavelength of excitation laser is 532 nm. α is defined as the angle of the incident laser polarization direction (white arrow) with respect to the x-axis (white dotted line).

DownLoad: Full-Size Img PowerPoint

图 3 ReS₂晶体的原位高压拉曼光谱(0—30 GPa)　(a) α = 0°; (b) α = 90°. *区域为硅油的拉曼信号; 深蓝色、绿色和橙色虚线分别代表第一个相变点、第二个相变点以及第三个相变点时特征拉曼振动模式的变化趋势

Figure 3. In-situ high pressure Raman measurements of ReS₂ crystal (0–30 GPa): (a) α = 0°; (b) α = 90°. The bump labeled with * is the Raman signal from silicone oil. The dark blue, green, and orange dotted lines represent the evolution of the key Raman modes revealing the first, second, and third phase transitions, respectively.

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图 4 ReS₂晶体的部分拉曼振动模式频率随压强的变化 (0—30 GPa)　(a) α = 0°; (b) α = 90°. 深蓝色, 绿色和橙色数据线分别代表第一个相变点, 第二个相变点以及第三个相变点时特征拉曼振动模式的变化趋势; 灰色数据线表示文中不进行重点讨论的拉曼振动模式

Figure 4. Pressure dependence of Raman mode frequencies for the ReS₂ sample (0–30 GPa): (a) α = 0°; (b) α = 90. The dark blue, green, and orange data lines represent the variation trend of featured Raman modes at the first, second, and third phase transitions, respectively. The gray data lines represent Raman modes that can be observed throughout the entire pressure range.

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表 1 ReS₂晶体的18个拉曼振动模式的属性

Table 1. Assignment of 18 Raman active modes in ReS₂ crystal.

Serial number	Symmetry	Raman frequency/cm^–1
1	A_g-like	137.5
2	A_g-like	142.6
3	E_g-like	150.2
4	E_g-like	160.4
5	E_g-like	211.0
6	E_g-like	233.8
7	C_p	274.6
8	C_p	280.9
9	E_g-like	305.0
10	E_g-like	307.8
11	C_p	317.4
12	C_p	321.7
13	C_p	345.6
14	C_p	365.9
15	C_p	375.4
16	C_p	404.5
17	A_g-like	426.4
18	A_g-like	436.1

DownLoad: CSV

[1]	Xia J, Wang J, Chao D L, Chen Z, Liu Z, Kuo J L, Yan J X, Shen Z X 2017 Nanoscale 9 7533 Google Scholar
[2]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotechnol. 7 699 Google Scholar
[3]	刘雨亭, 贺文宇, 刘军伟, 邵启明 2021 物理学报 70 127303 Google Scholar Liu Y T, He W Y, Liu J W, Sao Q M 2021 Acta Phys. Sin. 70 127303 Google Scholar
[4]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147 Google Scholar
[5]	Zeng H L, Cui X D 2015 Chem. Soc. Rev. 44 2629 Google Scholar
[6]	Li Y F, Zhou Z, Zhang S B, Chen Z F 2008 J. Am. Chem. Soc. 130 16739 Google Scholar
[7]	Tongay S, Sahin H, Ko C, Luce A, Fan W, Liu K, Zhou J, Huang Y S, Ho C H, Yan J Y, Ogletree D F, Aloni S, Ji J, Li S S, Li J B, Peeters F M, Wu J Q 2014 Nat. Commun. 5 3252 Google Scholar
[8]	Chenet D A, Aslan O B, Huang P Y, Fan C, van der Zande A M, Heinz T F, Hone J C 2015 Nano Lett. 15 5667 Google Scholar
[9]	Lorchat E, Froehlicher G, Berciaud S 2016 ACS Nano 10 2752 Google Scholar
[10]	Liu E F, Fu Y J, Wang Y J, Feng Y Q, Liu H M, Wan X G, Zhou W, Wang B G, Shao L B, Ho C H, Huang Y S, Cao Z Y, Wang L G, Li A D, Zeng J W, Song F Q, Wang X R, Shi Y, Yuan H T, Hwang H Y, Cui Y, Miao F, Xing D Y 2015 Nat. Commun. 6 6991 Google Scholar
[11]	Zhong H X, Gao S Y, Shi J J, Yang L 2015 Phys. Rev. B 92 115438 Google Scholar
[12]	徐翔, 张莹, 闫庆, 刘晶晶, 王骏, 徐新龙, 华灯鑫 2021 物理学报 70 098203 Google Scholar Xu X, Zhang Y, Yan Q, Liu J J, Wang J, Xu X L, Hua D X 2021 Acta Phys. Sin. 70 098203 Google Scholar
[13]	He J Q, Zhang L, He D W, Wang Y S, He Z Y, Zhao H 2018 Opt. Express 26 21501 Google Scholar
[14]	Hart L, Dale S, Hoye S, Webb J L, Wolverson D 2016 Nano Lett. 16 1381 Google Scholar
[15]	Shim J, Oh A, Kang D H, Oh S, Jang S K, Jeon J, Jeon M H, Kim M, Choi C, Lee J, Lee S, Yeom G Y, Song Y J, Park J H 2016 Adv. Mater. 28 6985 Google Scholar
[16]	Tongay S, Zhou J, Ataca C, Lo K, Matthews T S, Li J B, Grossman J C, Wu J Q 2012 Nano Lett. 12 5576 Google Scholar
[17]	Jin W C, Yeh P C, Zaki N, Zhang D T, Sadowski J T, Al-Mahboob A, van der Zande A M, Chenet D A, Dadap J I, Herman I P, Sutter P, Hone J, Osgood Jr R M 2013 Phys. Rev. Lett. 111 106801 Google Scholar
[18]	Rahman M, Davey K, Qiao S Z 2017 Adv. Funct. Mater. 27 1606129 Google Scholar
[19]	Ho C H, Huang Y S, Tiong K K 2001 J. Alloy. Compd. 317 222
[20]	Xia J, Li D F, Zhou J D, Yu P, Lin J H, Kuo J L, Li H B, Liu Z, Yan J X, Shen Z X 2017 Small 13 1701887 Google Scholar
[21]	Calandra M, Mauri F 2011 Phys. Rev. Lett. 106 196406 Google Scholar
[22]	Zhao Z, Zhang H J, Yuan H T, Wang S B, Lin Y, Zeng Q S, Xu G, Liu Z X, Solanki G K, Patel K D, Cui Y, Hwang H Y, Mao W L 2015 Nat. Commun. 6 7312 Google Scholar
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[24]	Alidoust M, Halterman K, Zyuzin A A 2017 Phys. Rev. B 95 155124 Google Scholar
[25]	Hou D B, Ma Y Z, Du J G, Yan J Y, Ji C, Zhu H Y 2010 J. Phys. Chem. Solids 71 1571 Google Scholar
[26]	Zhou D W, Zhou Y H, Pu C Y, Chen X L, Lu P C, Wang X F, An C, Zhou Y, Miao F, Ho C H, Sun J, Yang Z R, Xing D Y 2017 npj Quantum Mater. 2 19 Google Scholar
[27]	Kertesz M, Hoffmann R 1984 J. Am. Chem. Soc. 106 3453 Google Scholar
[28]	Murray H H, Kelty S P, Chianelli R R, Day C S 1994 Inorg. Chem. 33 4418 Google Scholar
[29]	Wolverson D, Crampin S, Kazemi A S, Ilie A, Bending S J 2014 ACS Nano 8 11154 Google Scholar
[30]	Feng Y Q, Zhou W, Wang Y J, Zhou J, Liu E F, Fu Y J, Ni Z H, Wu X L, Yuan H T, Miao F, Wang B G, Wan X G, Xing D Y 2015 Phys. Rev. B 92 054110 Google Scholar
[31]	Wang P, Wang Y G, Qu J Y, Zhu Q, Yang W G, Zhu J L, Wang L P, Zhang W W, He D W, Zhao Y S 2018 Phys. Rev. B 97 235202 Google Scholar
[32]	Sheremetyeva N, Tristant D, Yoshimura A, Gray J, Liang L B, Meunier V 2019 Phys. Rev. B 100 214101 Google Scholar
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[34]	Ibáñez-Insa J, Wózniak T, Oliva R, Popescu C, Hernández S, López-Vidrier J 2021 Minerals 11 207
[35]	Yan Y L, Jin C L, Wang J, Qin T R, Li F F, Wang K, Han Y H, Gao C X 2017 J. Phys. Chem. Lett. 8 3648 Google Scholar
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[38]	Feng Y Q, Sun H Y, Sun J H, Shen Y, You Y 2019 Mater. Today Commun. 21 100684 Google Scholar
[39]	Chi Z H, Chen X L, Yen F, Peng F, Zhou Y H, Zhu J L, Zhang Y J, Liu X D, Lin C L, Chu S Q, Li Y C, Zhao J G, Kagayama T, Ma Y M, Yang Z R 2014 Phys. Rev. Lett. 120 037002
[40]	Mao H K, Chen B, Chen J H, Li K, Lin J F, Yang W G, Zheng H Y 2016 Matter Radiat. Extrem. 1 59 Google Scholar

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In-situ high pressure polarized Raman spectroscopy of rhenium disulfide

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Corresponding author: Wang Zeng-Hui, zenghui.wang@uestc.edu.cn ; Xia Juan, juanxia@uestc.edu.cn

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In-situ high pressure polarized Raman spectroscopy of rhenium disulfide

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Corresponding author: Wang Zeng-Hui, zenghui.wang@uestc.edu.cn ; Xia Juan, juanxia@uestc.edu.cn

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