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As the scaling-down of semiconductor processing technology goes on, it is urgent to find the successor of silicon-based materials since the severe short channel effect lowers down their energy efficiency as logic devices. Owing to its atomic thickness and van der Waals surface, two-dimensional semiconductors have received huge attention in this area, among which Bi2O2Se has achieved a good trade-off among the carrier mobility, stability and costing. However, the synthesis of Bi2O2Se need some polarized substrates, which hinders its processing and application. Here, a Bi2O2Se layer with 25 µm in size and 51.0 nm in thickness is directly synthesized on a silicon substrate via chemical vapor deposition . A Field-effect transistor with a carrier mobility of 80.0 cm2/(V·s) and phototransistor with a photoresponsivity of 2.45×104 A/W and a photogain of 6×104 is also demonstrated, which hpossesses quite outstanding photodetection performance. Nevertheless, the high dark current and low on/off ratio brought by the large thickness leads to a fair detectivity (5×1010 Jones). All in all, , although silicon substrate brings convenience in device fabricating, it is still needed to further optimizing the growth and integrating more applications of various two-dimensional materials .
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Keywords:
- two-dimensional materials /
- chemical vapor deposition /
- Bi2O2Se /
- Photodetector
[1] 2021 IRDS Lithography Report
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Google Scholar
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Google Scholar
[4] Sze S, Irvin J 1968 Solid-State Electron. 11 599
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图 1 生长与晶体示意图 (a) 化学气相沉积生长示意图; (b) Bi2O2Se晶体结构示意图; (c)极性基底(云母)与非极性基底(硅基底)对样品厚度的影响示意图
Figure 1. Schematics of synthesis setup and crystal structure: (a) Schematic of chemical vapor deposition process; (b) schematic of Bi2O2Se crystal structure; (c) schematic of the impact of polar and nonpolar substrates to the sample thickness.
图 2 光学表征与生长机理 (a)薄层Bi2O2Se的低倍光学照片;(b)薄层Bi2O2Se的高倍光学照片; (c)多层Bi2O2Se光学照片; (d) 多层样品以薄层样品作为基底生长的光学照片; (e) 生长台阶状样品可能的机理示意图
Figure 2. Optical characterization and growth mechanism: (a) Optical image of thin-layer Bi2O2Se with low magnification; (b) optical image of thin-layer Bi2O2Se with high magnification; (c) optical image of multilayer Bi2O2Se; (d) optical image showing thin-layer sample as growth substrate of multilayer sample; (e) possible growth mechanism of stepped sample.
图 3 Bi2O2Se的表征 (a) Raman光谱; (b)和(c) AFM表征; (d) 拓扑高度曲线显示台阶样品厚度约为51 nm; (e) SEM照片; (f) EDS 图谱
Figure 3. Characterization of Bi2O2Se: (a) Raman spectrum; (b) and (c) AFM characterization; (d) topography height profile revealing the thickness of the stepped sample is about 51.0 nm; (e) SEM image; (f) EDS spectrum.
图 4 Bi2O2Se的FET及光电响应 (a) FET的Id-Vg曲线, 插图为FET器件的光学图片; (b) FET的Id-Vd曲线; (c)晶体管光电响应的Id-Vg曲线; (d) 光电晶体管光电开关响应的Id-t曲线
Figure 4. FET and Phototransistor performance of Bi2O2Se: (a) FET Id-Vg curve, inset is optical image of FET device; (b) FET Id-Vd curve; (c) phototransistor Id-Vg curve; (d) phototransistor on/off sensing Id-t curve.
图 5 Bi2O2Se光电晶体管性能分析 (a) 不同栅压下, Iph与光强的关系; (b) 不同栅压下, 光响应度与光强的关系; (c) 不同栅压下, 光增益与光强的关系; (d) 光检测灵敏度以及开关比与栅压的关系
Figure 5. Analysis of Bi2O2Se phototransistor data: (a) The relationship of photocurrent(Iph) with light source power under different backgate voltages; (b) the relationship of photoresponsivity (R) with light source power under different backgate voltages; (c) the relationship of photogain(G) with light source power under different backgate voltages; (d) the relationship of detectivity(D) and on/off ratio with backgate voltage.
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[1] 2021 IRDS Lithography Report
[2] Winstead B, Ravaioli U 2000 IEEE T. Electron Dev. 47 1241
Google Scholar
[3] Hooper W, Lehrer W 1967 Proc. IEEE 55 1237
Google Scholar
[4] Sze S, Irvin J 1968 Solid-State Electron. 11 599
Google Scholar
[5] Asif Khan M, Kuznia J, Bhattarai A, Olson D 1993 Appl. Phys. Lett. 62 1786
Google Scholar
[6] Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 Proc. Natl. Acad. Sci. U S A 102 10451
Google Scholar
[7] Lee Y H, Zhang X Q, Zhang W, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T, Chang C S, Li L J, Lin T W 2012 Adv. Mater. 24 2320
Google Scholar
[8] Zhan Y, Liu Z, Najmaei S, Ajayan P M, Lou J 2012 Small 8 966
Google Scholar
[9] Duan X, Wang C, Shaw J C, Cheng R, Chen Y, Li H, Wu X, Tang Y, Zhang Q, Pan A 2014 Nat. Nanotechnol. 9 1024
Google Scholar
[10] Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Nanotechnol. 9 372
Google Scholar
[11] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
Google Scholar
[12] Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
Google Scholar
[13] Li W, Zhou J, Cai S, Yu Z, Zhang J, Fang N, Li T, Wu Y, Chen T, Xie X 2019 Nat. Electron. 2 563
Google Scholar
[14] Cronemeyer D C 1957 Phys. Rev. 105 522
Google Scholar
[15] Bandurin D A, Tyurnina A V, Geliang L Y, Mishchenko A, Zólyomi V, Morozov S V, Kumar R K, Gorbachev R V, Kudrynskyi Z R, Pezzini S 2017 Nat. Nanotechnol. 12 223
Google Scholar
[16] Chow W L, Yu P, Liu F, Hong J, Wang X, Zeng Q, Hsu C H, Zhu C, Zhou J, Wang X 2017 Adv. Mater. 29 1602969
Google Scholar
[17] Zhao Y, Qiao J, Yu Z, Yu P, Xu K, Lau S P, Zhou W, Liu Z, Wang X, Ji W 2017 Adv. Mater. 29 1604230
Google Scholar
[18] Wu J, Liu Y, Tan Z, Tan C, Yin J, Li T, Tu T, Peng H 2017 Adv. Mater. 29 1704060
Google Scholar
[19] Wu J, Tan C, Tan Z, Liu Y, Yin J, Dang W, Wang M, Peng H 2017 Nano Lett. 17 3021
Google Scholar
[20] Wu J, Yuan H, Meng M, Chen C, Sun Y, Chen Z, Dang W, Tan C, Liu Y, Yin J 2017 Nat. Nanotechnol. 12 530
Google Scholar
[21] Li T, Peng H 2021 Acc. Mater. Res. 2 842
Google Scholar
[22] Tan C, Tang M, Wu J, Liu Y, Li T, Liang Y, Deng B, Tan Z, Tu T, Zhang Y 2019 Nano Lett. 19 2148
Google Scholar
[23] Fu Q, Zhu C, Zhao X, Wang X, Chaturvedi A, Zhu C, Wang X, Zeng Q, Zhou J, Liu F 2019 Adv. Mater. 31 1804945
Google Scholar
[24] Seu K J, Pandey A P, Haque F, Proctor E A, Ribbe A E, Hovis J S 2007 Biophys. J. 92 2445
Google Scholar
[25] Liu Y, Guo J, Zhu E, Liao L, Lee S-J, Ding M, Shakir I, Gambin V, Huang Y, Duan X 2018 Nature 557 696
Google Scholar
[26] Grinvald A, Steinberg I Z 1974 Anal. Biochem. 59 583
Google Scholar
[27] Furchi M M, Polyushkin D K, Pospischil A, Mueller T 2014 Nano Lett. 14 6165
Google Scholar
[28] Gong X, Tong M, Xia Y, Cai W, Moon J S, Cao Y, Yu G, Shieh C-L, Nilsson B, Heeger A J 2009 Science 325 1665
Google Scholar
[29] Liu S, Wei Z, Cao Y, Gan L, Wang Z, Xu W, Guo X, Zhu D 2011 Chem. Sci. 2 796
Google Scholar
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