Narrowband near-ultraviolet photodetector fabricated from porous GaN/CuZnS heterojunction

Guo Yue; Sun Yi-Ming; Song Wei-Dong

doi:10.7498/aps.71.20220990

Abstract

Narrowband photodetection systems are widely used in fluorescence detection, artificial vision and other fields. In order to realize the narrow spectral detection of special band, it is traditionally necessary to integrate broadband detectors with optical filters. However, with the development of detection technology, higher requirements have also been placed on the power consumption, size, and cost of the detection system, and the applications of traditional narrowband photodetectors with complex structures and high costs are limited. Thus, a filterless, narrowband near-ultraviolet photodetector based on a porous GaN/CuZnS heterojunction is demonstrated. The porous GaN thin films with low defect density and CuZnS thin films with high hole conductivity are fabricated by photoelectrochemical etching and water bath growth methods, respectively, and the porous GaN/CuZnS heterojunction near-ultraviolet photodetectors are thus fabricated. Benefiting from the porous structure of GaN and the optical filtering effect of CuZnS, the photo-dark current ratio of the device exceeds four orders of magnitudes under –2 V bias and 370 nm light illumination; more importantly, the device has an ultra-narrowband near-ultraviolet photoresponse with a full width at half maximum of <8 nm (peak at 370 nm). In addition, the peak responsivity, external quantum efficiency and specific detectivity reach 0.41 A/W, 138.6% and 9.8×10¹² Jones, respectively. These excellent device performances show that the near-ultraviolet photodetectors based on porous GaN/CuZnS heterojunctions have broad application prospects in the field of narrow-spectrum ultraviolet photodetection.

Keywords:

Authors and contacts

1.
School of Applied Physics and Materials, Wuyi University, Jiangmen 529000, China
2.
School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China

Corresponding author: Sun Yi-Ming, yimingsun@m.scnu.edu.cn ; Song Wei-Dong, wdsongwyu@163.com

Funds: Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B010174004) and the Guangdong Basic and Applied Basic Research Foundation, China (Grant No. 2020A1515110185).

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References

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Cited By

图 1 (a)多孔GaN、(b)平面GaN以及(c) CuZnS薄膜的SEM表征; (d) CuZnS薄膜的EDX分析

Figure 1. SEM characterization of (a) porous GaN, (b) planar GaN and (c) CuZnS film; (d) EDX analysis of the CuZnS films.

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图 2 (a)多孔GaN薄膜和CuZnS薄膜的反射率图谱; (b) CuZnS薄膜的衍射图谱; 多孔GaN薄膜和(c)多孔GaN、CuZnS薄膜以及异质结的紫外-可见吸收光谱(插图为CuZnS的Tauc图)

Figure 2. (a) Reflectance patterns of porous GaN and CuZnS films; (b) XRD patterns of CuZnS films; (c) UV-vis absorption spectrum of porous GaN, CuZnS films and GaN/CuZnS heterojunction; inset in (c) shows the Tauc plot of the CuZnS films.

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图 3 (a)多孔GaN/CuZnS异质结器件的I-V特性曲线(插图为多孔GaN/CuZnS异质结器件结构示意图); (b) CuZnS器件和(c)多孔GaN器件的I-V特性曲线, (b)和(c)中的插图分别显示了器件在370 nm光开关周期下的I-t曲线和相应的器件结构

Figure 3. I-V characteristics of the (a) porous GaN/CuZnS heterojunction PD, inset in (a) shows the schematic illustration of the porous GaN/CuZnS structure; I-V characteristics of the (b) CuZnS PD devices and (c) porous GaN PD, insets in (b) and (c) show the I-t curves under switching 370 nm light illumination and corresponding device structures, respectively.

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图 4 不同刻蚀电压(V = 10, 15, 25 V)所制备的光电探测器的(a)光电流及光暗电流比、(b)响应度、(c)比探测率, 图(c)插图为器件的外量子效率

Figure 4. (a) Photocurrent and light-to-dark ratio, (b) responsivity and (c) specific detectivity of PDs prepared for different etching voltages (V = 10, 15, 25 V); inset in (c) shows the external quantum efficiency of PDs.

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图 5 (a)不同强度的370 nm光照下多孔GaN/CuZnS异质结光电探测器的I-V特性; (b)光强和光电流相应的线性拟合曲线; (c)响应度和比探测率随光强变化; (d)多孔GaN/CuZnS异质结的能带示意图

Figure 5. (a) Light intensity dependent I-V characteristics of porous GaN/CuZnS heterojunction PD under 370 nm light illumination; (b) light intensity dependent photocurrent and the corresponding linear fitting curve; (c) responsivity and detectivity as a function of light intensity; (d) the schematic energy band diagram of the porous GaN/CuZnS heterojunction.

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表 1 CuZnS薄膜和多孔GaN的霍尔效应测试数据

Table 1. Hall-effect test data of CuZnS films and porous GaN.

Sample	Temp./K	Bulk Con./cm^–3	Resistivity/(Ω·cm)	Conductivity/ (Ω·cm)^–1	Mobility/ (cm²·(V·s)^–1)
CuZnS	295	5.24×10¹⁸	0.324	3.08	36.7
Porous GaN	295	1.39×10¹⁷	0.127	7.89	355

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表 2 无滤波器、窄带PD的典型参数比较

Table 2. Comparison of typical parameters of filter-free, narrowband PDs.

Active materials	Peak wavelength/ nm	FWHM/nm	Bias/V	EQE/%	R/ (mA·W^–1)	D^*/ Jones	On/off ratio	Ref.
PC₇₁BM:PbS	890	50	–7	183	1310	8.0×10¹¹	～10⁴	[37]
Hybrid perovskite	780	28	0	12.1	76	2.65×10¹²	–	[45]
P₃HT:PC₇₁BM	650	29	–10	49.0	255	1.3×10¹¹	～10²	[46]
P₃HT:PCBM:CdTe	660	80	–6	～200	～1064	7.3×10¹¹	～10⁴	[47]
Organic ISQ	680	80	–2	15.0	82.3	3.2×10¹²	1.8×10³	[48]
p-NiO/n-ZnO	380	30	0	0.5	1.4	—	—	[49]
Porous GaN/CuZnS	370	8	–2	136.8	413.7	9.8×10¹²	>10⁴	This work

DownLoad: CSV

[1]	Wang T, Liang H, Han Z, Sui Y, Mei Z 2021 Adv. Mater. Technol. 6 2000945 Google Scholar
[2]	Wang S, Wu C, Wu F, Zhang F, Liu A, Zhao N, Guo D 2021 Sens. Actuators, A 330 112870 Google Scholar
[3]	Qiu M, Sun P, Liu Y, Huang Q, Zhao C, Li Z, Mai W 2018 Adv. Mater. Technol. 3 1700288 Google Scholar
[4]	Kim M, Seo J H, Singisetti U, Ma Z 2017 J. Mater. Chem. C 5 8338 Google Scholar
[5]	Li L, Liu Z, Wang L, Zhang B, Liu Y, Ao J P 2018 Mater. Sci. Semicond. Process. 76 61 Google Scholar
[6]	Zhou H, Gui P, Yu Q, Mei J, Wang H, Fang G 2015 J. Mater. Chem. C 3 990 Google Scholar
[7]	Song W, Chen J, Li Z, Fang X 2021 Adv. Mater. 33 2101059 Google Scholar
[8]	Wang Y, Wu C, Guo D, Li P, Wang S, Liu A, Li C, Wu F, Tang W 2020 ACS. Appl. Electron. Mater. 2 2032 Google Scholar
[9]	Zhu H, Shan C X, Yao B, Li B H, Zhang J Y, Zhao D X, Shen D Z, Fan X W 2008 J. Phys. Chem. C 112 20546 Google Scholar
[10]	Ni P N, Shan C X, Wang S P, Liu X Y, Shen D Z 2013 J. Mater. Chem. C 1 4445 Google Scholar
[11]	王顺利, 王亚超, 郭道友, 李超荣, 刘爱萍 2021 物理学报 70 128502 Google Scholar Wang S L, Wang Y C, Guo D Y, Li C R, Liu A P 2021 Acta Phys. Sin. 70 128502 Google Scholar
[12]	Gui P, Li J, Zheng X, Wang H, Yao F, Hu X, Liu Y, Fang G 2020 J. Mater. Chem. C 8 6804 Google Scholar
[13]	Qin Y, Li L, Zhao X, Tompa G S, Dong H, Jian G, He Q, Tan P, Hou X, Zhang Z, Yu S, Sun H, Xu G, Miao X, Xue K, Long S, Liu M 2020 ACS Photonics 7 812 Google Scholar
[14]	裴佳楠, 蒋大勇, 田春光, 郭泽萱, 刘如胜, 孙龙, 秦杰明, 侯建华, 赵建勋, 梁庆成, 高尚 2015 物理学报 64 067802 Google Scholar Pei J N, Jiang D Y, Tian C G, Guo Z X, Liu R S, Sun L, Qin J M, Hou J H, Zhao J X, Liang Q C, Gao S 2015 Acta Phys. Sin. 64 067802 Google Scholar
[15]	Sarkar K, Kumar P 2021 Appl. Surf. Sci. 566 150695 Google Scholar
[16]	Yang C, Xi X, Yu Z, Cao H, Li J, Lin S, Ma Z, Zhao L 2018 ACS Appl. Mater. Interfaces 10 5492 Google Scholar
[17]	Calahorra Y, Spiridon B, Wineman A, Busolo T, Griffin P, Szewczyk P K, Zhu T, Jing Q, Oliver R, Kar-Narayan S 2020 Appl. Mater. Today 21 100858 Google Scholar
[18]	Xiao Y, Liu L, Ma Z H, Meng B, Qin S J, Pan G B 2019 Nanomaterials 9 1198 Google Scholar
[19]	Yu R, Wang G, Shao Y, Wu Y, Wang S, Lian G, Zhang B, Hu H, Liu L, Zhang L, Hao X 2019 J. Mater. Chem. C 7 14116 Google Scholar
[20]	Li J, Xi X, Lin S, Ma Z, Li X, Zhao L 2020 ACS Appl. Mater. Interfaces 12 11965 Google Scholar
[21]	Li J, Xi X, Li X, Lin S, Ma Z, Xiu H, Zhao L 2022 Adv. Opt. Mater. 8 1902162 Google Scholar
[22]	Li Q, Liu G, Yu J, Wang G, Wang S, Cheng T, Chen C, Liu L, Yang J, Xu X, Zhang L 2022 J. Mater. Chem. C 10 8321 Google Scholar
[23]	Huang Z, Liu J, Zhang T, Jin Y, Wang J, Fan S, Li Q 2021 ACS Appl. Mater. Interfaces 13 22796 Google Scholar
[24]	Hu J, Yang S, Zhang Z, Li H, Perumal Veeramalai C, Sulaman M, Saleem M I, Tang Y, Jiang Y, Tang L, Zou B 2021 J. Mater. Sci. Technol. 68 216 Google Scholar
[25]	Rajamani S, Arora K, Konakov A, Belov A, Korolev D, Nikolskaya A, Mikhaylov A, Surodin S, Kryukov R, Nikolitchev D, Sushkov A, Pavlov D, Tetelbaum D, Kumar M, Kumar M 2018 Nanotechnology 29 305603 Google Scholar
[26]	Lan Z, Lau Y S, Wang Y, Xiao Z, Ding L, Luo D, Zhu F 2020 Adv. Opt. Mater. 8 2001388 Google Scholar
[27]	Qin Z, Song D, Xu Z, Qiao B, Huang D, Zhao S 2020 Org. Electron. 76 105417 Google Scholar
[28]	Wang J, Xiao S, Qian W, Zhang K, Yu J, Xu X, Wang G, Zheng S, Yang S 2021 Adv. Mater. 33 2005557 Google Scholar
[29]	Li J, Yang C, Liu L, Cao H, Lin S, Xi X, Li X, Ma Z, Wang K, Patanè A, Zhao L 2020 Adv. Opt. Mater. 8 1901276 Google Scholar
[30]	Guo Y, Song W, Liu Q, Sun Y, Chen Z, He X, Zeng Q, Luo X, Zhang R, Li S 2022 J. Mater. Chem. C 10 5116 Google Scholar
[31]	Wang X, Pan Y, Xu Y, Zhao J, Li Y, Li Q, Chen J, Zhao Z, Zhang X, Elemike E E, Onwudiwe D C, Bae B S, Lei W 2022 Adv. Electron. Mater. 8 2200178 Google Scholar
[32]	Guo H, Jiang L, Huang K, Wang R, Liu S, Li Z, Rong X, Dong G 2021 Org. Electron. 92 106122 Google Scholar
[33]	Zhang Y, Song W 2021 J. Mater. Chem. C 9 4799 Google Scholar
[34]	Zhang Y, Xu X, Fang X 2019 InfoMat 1 542 Google Scholar
[35]	Davis E A, Mott N F 1970 Philos. Mag. 22 0903 Google Scholar
[36]	Zheng Y, Li Y, Tang X, Wang W, Li G 2020 Adv. Opt. Mater. 8 2000197 Google Scholar
[37]	Shen L, Zhang Y, Bai Y, Zheng X, Wang Q, Huang J 2016 Nanoscale 8 12990 Google Scholar
[38]	李秀华, 张敏, 杨佳, 邢爽, 高悦, 李亚泽, 李思雨, 王崇杰 2022 物理学报 71 048501 Google Scholar Li X H, Zhang M, Yang J, Xing S, Gao Y, Li Y Z, Li S Y, Wang C J 2022 Acta Phys. Sin. 71 048501 Google Scholar
[39]	玄鑫淼, 王加恒, 毛彦琦, 叶利娟, 张红, 李泓霖, 熊元强, 范嗣强, 孔春阳, 李万俊 2021 物理学报 70 238502 Google Scholar Xuan X M, Wang J H, Mao Y Q, Ye L J, Zhang H, Li H L, Xiong Y Q, Fan S Q, Kong C Y, Li W J 2021 Acta Phys. Sin. 70 238502 Google Scholar
[40]	Yadav A, Agrawal J, Singh V 2021 IEEE Photonics Technol. Lett. 33 1065 Google Scholar
[41]	Zheng L, Hu K, Teng F, Fang X 2017 Small 13 1602448 Google Scholar
[42]	Song W, Wang X, Xia C, Wang R, Zhao L, Guo D, Chen H, Xiao J, Su S, Li S 2017 Nano Energy 33 272 Google Scholar
[43]	Xu X, Chen J, Cai S, Long Z, Zhang Y, Su L, He S, Tang C, Liu P, Peng H, Fang X 2018 Adv. Mater. 30 1803165 Google Scholar
[44]	Wang L, Jie J, Shao Z, Zhang Q, Zhang X, Wang Y, Sun Z, Lee S-T 2015 Adv. Funct. Mater. 25 2910 Google Scholar
[45]	Li L, Deng Y, Bao C, Fang Y, Wei H, Tang S, Zhang F, Huang J 2017 Adv. Opt. Mater. 5 1700672 Google Scholar
[46]	Wang W, Zhang F, Du M, Li L, Zhang M, Wang K, Wang Y, Hu B, Fang Y, Huang J 2017 Nano Lett. 17 1995 Google Scholar
[47]	Shen L, Fang Y, Wei H, Yuan Y, Huang J 2016 Adv. Mater. 28 2043 Google Scholar
[48]	Li W, Li D, Dong G, Duan L, Sun J, Zhang D, Wang L 2016 Laser Photonics Rev. 10 473 Google Scholar
[49]	Zhang Y, Xu J, Shi S, Gao Y, Wang C, Zhang X, Yin S, Li L 2016 ACS Appl. Mater. Interfaces 8 22647 Google Scholar
[50]	Wang H, Chen H, Li L, Wang Y, Su L, Bian W, Li B, Fang X 2019 J Phys Chem Lett 10 6850 Google Scholar
[51]	Hu L, Yan J, Liao M, Xiang H, Gong X, Zhang L, Fang X 2012 Adv. Mater. 24 2305 Google Scholar

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Vol. 71, Issue 21 - 2022-11-05

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