High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer composites

Li Wei; Zhu Hui-Wen; Sun Tong; Qu Wen-Shan; Li Jian-Gang; Yang Hui; Gao Zhi-Xiang; Shi Wei; Wei Bin; Wang Hua

doi:10.7498/aps.72.20221507

Abstract

As the emerging data storage technology, organic resistive switching memory (ORSM) possesses numerous superiorities as the substitution for or the complementation of the traditional Si-based semiconductor memory. Poly(3-hexylthiophene) (P3HT) has been widely used as a polymer donor component of ORSMs due to its advantages of high mobility and high chemical stability. Up to now, ORSM based on P3HT has achieved high on/off current ratio (I_on/off), but the endurance still needs to be improved. Herein, high endurance ORSMs based on 1,2-dicyanobenzene (O-DCB) and P3HT composite are fabricated by spin coating and thermally evaporating, and exhibit non-volatile and bipolar memory characteristics. The ORSMs based on P3HT:15 wt.% O-DCB and P3HT:30 wt.% O-DCB exhibit the values of I_on/off exceeding 10⁴ and 10³ respectively, and both of them exert excellent endurance of 400 times, retention time of more than 10⁵ s. The mechanism of the switching is explored by linear fitting of I-V curve and electrochemical impedance spectrum . The results indicate that the filling and vacant process of the charge traps induced by O-DCB and the inherent traps in P3HT bulk lead to a resistive switching effect. The negative or positive bias triggers off trapping and detrapping process, which leads the conductive way of charges to change, resulting in the resistive switching effect. The excellent endurance of ORSM is attributed to the uniform distribution of O-DCB in P3HT bulk because of the small molecular size and high solubility of O-DCB, resulting in well-distributed and stable charge traps. On the other hand, the out-bound planarity of O-DCB molecular promotes the close interaction with the conjugated chains of P3HT. This study enlightens an effective strategy to carry out high-endurance ORSM and facilitates their electronic applications in future.

Keywords:

Authors and contacts

1.
Shanxi Province Key Laboratory of Microstructure Functional Materials Institute of Solid State Physics, Shanxi Datong University, Datong 037009, China
2.
School of Chemistry and Chemical Engineering, Shanxi Datong University, Datong 037009, China
3.
Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China
4.
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
5.
Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China

Corresponding author: Gao Zhi-Xiang, 03100012@sxdtdx.edu.cn ; Shi Wei, shiwei@shu.edu.cn ;

Funds: Project supported by the Applied Basic Research Project of Shanxi Province (Grant No. 201901D111316), the Science and technology innovation project of Shanxi Colleges and Universities (Grant No. 2020L0488), the Datong City Key Industry Research Project (Grant No. 2019015), the Graduate Education Innovation Project of Shanxi Province (Grant No.2022Y761), and the Graduate Education Innovation Project of Shanxi Datong University (Grant Nos. 22CX02, 22CX16).

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References

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Cited By

图 1 (a) P3HT和O-DCB的分子结构; (b) ORSM器件结构

Figure 1. (a) Chemical structures of P3HT and O-DCB; (b) schematic diagram of the ORSM.

DownLoad: Full-Size Img PowerPoint

图 2 (a) O-DCB的吸收光谱、激发光谱和发射光谱; P3HT, P3HT: 15% O-DCB和P3HT: 30% O-DCB的 (b) 吸收光谱和 (c) 荧光光谱; P3HT, P3HT: 15% O-DCB, P3HT: 30% O-DCB和P3HT: 45% O-DCB薄膜的AFM形貌图; P3HT: 15% O-DCB和P3HT: 30% O-DCB薄膜S和N元素的分布图

Figure 2. (a) Absorption, excitation and emission spectra of O-DCB; (b) normalized UV-vis absorption spectra and (c) PL spectra of P3HT, P3HT: 15% O-DCB and P3HT: 30% O-DCB. AFM images of (d) P3HT, (e) P3HT: 15% O-DCB, (f) P3HT: 30% O-DCB, and (g) P3HT: 45% O-DCB films. Distribution maps of S and N elements of (h)(i) P3HT: 15% O-DCB and (j)(k) P3HT: 30% O-DCB films.

DownLoad: Full-Size Img PowerPoint

图 3 (a) P3HT, (b) P3HT: 15% O-DCB, (c) P3HT: 30% O-DCB, (d) P3HT: 45% O-DCB器件的I-V特性; (e) P3HT: 15% O-DCB和 (f) P3HT: 30% O-DCB器件的I_on/off-V特性; (g) P3HT: 15% O-DCB和 (h) P3HT: 30% O-DCB器件的切换速度测试

Figure 3. I-V characterizations of devices with (a) P3HT, (b) P3HT:15% O-DCB, (c) P3HT:30% O-DCB, and (d) P3HT:45% O-DCB. I_on/off-V characterizations of devices with (e) P3HT:15% O-DCB and (f) P3HT:30% O-DCB. Switching speed test of devices with (g) P3HT:15% O-DCB and (h) P3HT:30% O-DCB.

DownLoad: Full-Size Img PowerPoint

图 4 (a)—(c) D1和 (d)—(f) D2的 (a)(d) 耐久性、(b)(e) 保持性和 (c)(f) 脉冲周期、宽度、电压为4 μs、4 μs和–1 V时的读脉冲稳定性测试

Figure 4. (a)(d) Endurance cycles test, (b)(e) retention time test, and (c)(f) reading pulse test with the pulse period and width of 4 μs and 4 μs and the voltage of –1 V of (a)–(c) D1 and (d)–(f) D2.

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图 5 (a) D1和 (b) D2的I-V曲线的线性拟合结果; (c) P3HT器件以及 (d)(f) D1和 (e)(g) D2分别在(d)(e) LRS和(f)(g) HRS的Nyquist图; (h) 阻抗的虚部与频率关系图

Figure 5. Linear fitting of the I-V curves of (a) D1 and (b) D2. Nyquist plots of (c) P3HT based device, (d)(f) D1 and (e)(g) D2 in (d)(e) LRS and (f)(g) HRS; (h) plots of the imaginary part of the impedance vs. frequency of devices in LRS.

DownLoad: Full-Size Img PowerPoint

图 6 (a) ORSM的能级结构图; (b)—(f)器件的阻变机理示意图 (b) 陷阱电荷俘获阶段; (c) 陷阱填满阶段; (d) 陷阱电荷去俘获阶段; (e) 空陷阱阶段; (f) 电流泄露

Figure 6. (a) Energy diagram of the ORSM; (b)–(f) Schematic illustration of the switching mechanism: Charge transfer processes of (b) trap filling, (c) fully filling trap, (d) trap pumping, (e) vacant trap, and (f) current leakage.

DownLoad: Full-Size Img PowerPoint

表 1 D1和D2的器件参数汇总

Table 1. Summary of device parameters for D1 and D2.

器件 V_set/V V_reset/V I_on/off 耐久性保持性/s 存储类型

D1 –6.9 2.6 1.5×10⁴ 400 10⁵ Flash
D2 –6.2 2.8 1.0×10³ 400 10⁵ Flash

DownLoad: CSV

[1]	Zhang Z, Wang Z, Shi T, Bi C, Rao F, Cai Y, Liu Q, Wu H, Zhou P 2020 InfoMat 2 261 Google Scholar
[2]	Service R F 2018 Science 361 321 Google Scholar
[3]	Debenedictis E P 2019 Computer 52 114 Google Scholar
[4]	Zahoor F, Azni Zulkifli T Z, Khanday F A 2020 Nanoscale Res. Lett. 15 90 Google Scholar
[5]	Wong H S P, Lee H Y, Yu S, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T, Tsai M J 2012 Proc. IEEE 100 1951 Google Scholar
[6]	Sangwan V K, Lee H S, Bergeron H, Balla I, Beck M E, Chen K S, Hersam M C 2018 Nature 554 500 Google Scholar
[7]	Gismatulin A A, Orlov O M, Gritsenko V A, Kruchinin V N, Mizginov D S, Krasnikov G Y 2020 Appl. Phys. Lett. 116 203502 Google Scholar
[8]	Younis A, Lin C H, Guan X, Shahrokhi S, Huang C Y, Wang Y, He T, Singh S, Hu L, Retamal J R D, He J H, Wu T 2021 Adv. Mater. 33 2005000 Google Scholar
[9]	朱佳雪, 张续猛, 王睿, 刘琦 2022 物理学报 71 148503 Google Scholar Zhu J X, Zhang X M, Wang R, Liu Q 2022 Acta Phys. Sin. 71 148503 Google Scholar
[10]	古亚娜, 梁燕, 王光义, 夏晨阳 2022 物理学报 71 110501 Google Scholar Gu Y N, Liang Y, Wang G Y, Xia C Y 2022 Acta Phys. Sin. 71 110501 Google Scholar
[11]	Paul F, Paul S 2022 Small 18 2106442 Google Scholar
[12]	Lee J H, Park S P, Park K, Kim H J 2019 Adv. Funct. Mater. 30 1907437
[13]	Gao S, Yi X, Shang J, Liu G, Li R W 2019 Chem. Soc. Rev. 48 1531 Google Scholar
[14]	卢颖, 陈威林, 高双, 李润伟 2020 材料导报 34 1146 Google Scholar Lu Y, Chen W L, Gao S, Li R W 2020 Mat. Rep. 34 1146 Google Scholar
[15]	陈威林, 高双, 伊晓辉, 尚杰, 刘钢, 李润伟 2019 功能高分子学报 32 434 Chen W L, Gao S, Yi X H, Shang J, Liu G, Li R W 2019 J. Funct. Polym. 32 434
[16]	Lian H, Cheng X Z, Hao H T, Han J B, Lau M T, Li Z K, Zhou Z, Dong Q C, Wong W Y 2022 Chem. Soc. Rev. 51 1926 Google Scholar
[17]	孙艳梅 2017 博士学位论文 (哈尔滨: 黑龙江大学) Sun Y M 2017 Ph. D. Dissertation (Haerbin: Heilongjiang University) (in Chinese)
[18]	朱志强 2021 硕士学位论文 (常州: 常州大学) Zhu Z Q 2021 M.S. Thesis (Changzhou: Changzhou University) (in Chinese)
[19]	Hou J, Zhang B, Li D, Fu Y, Liu G, Chen Y 2019 J. Mater. Chem. C 7 14664 Google Scholar
[20]	Narasimhan Arunagirinathan R, Gopikrishna P, Das D, Iyer P K 2019 ACS Appl. Electron. Mater. 1 600 Google Scholar
[21]	Sun Y, Li L, Wen D, Bai X 2015 J. Phys. Chem. C 119 19520 Google Scholar
[22]	Po R, Bernardi A, Calabrese A, Carbonera C, Corso G, Pellegrino A 2014 Energy Environ. Sci. 7 925 Google Scholar
[23]	Li Y, Zhang Y, Wu B, Pang S, Yuan X, Duan C, Huang F, Cao Y 2022 Solar RRL 2200073
[24]	Xian K, Liu Y, Liu J, Yu J, Xing Y, Peng Z, Zhou K, Gao M, Zhao W, Lu G, Zhang J, Hou J, Geng Y, Ye L 2022 J. Mater. Chem. A 10 3418 Google Scholar
[25]	Liu M, Fan Q, Yang K, Zhao Z, Zhao X, Zhou Z, Zhang J, Lin F, Jen A K Y, Zhang F 2022 Sci. China Chem. 65 1642 Google Scholar
[26]	Song J, Guo T, Huang C, Liu M, Cui H, Huang W, Wang Y, Li T 2022 Chem. Eng. J. 446
[27]	Chaudhary D, Munjal S, Khare N, Vankar V D 2018 Carbon 130 553 Google Scholar
[28]	Jin Z, Liu G, Wang J 2013 AIP Adv. 3 052113 Google Scholar
[29]	Liang J, Su Y, Lin Q, Zhou H, Zhang S, Pei Y, Hu R 2014 Semicond. Sci. Technol. 29 115029 Google Scholar
[30]	Sherazi S S H, Rehman M M, Ur Rehman H M M, Kim W Y, Siddiqui G U, Karimov K S 2020 Semicond. Sci. Technol. 35 125012 Google Scholar
[31]	Sim R, Ming W, Setiawan Y, Lee P S 2012 J. Phys. Chem. C 117 677
[32]	Wang P, Liu Q, Zhang C Y, Jiang J, Wang L H, Chen D Y, Xu Q F, Lu J M 2015 Nanoscale 7 19579 Google Scholar
[33]	丛麟权, 李文骁, 马瑛, 曲旭坡, 邢颖 2020 染料与染色 57 24 Cong L Q, Li W X, Ma Y, Qu X P, Xing Y 2020 Dyestuffs and Coloration 57 24
[34]	王述 1983 辽宁化工 56 Wang S 1983 Liaoning Chem. Ind. 56 (in Chinses)
[35]	Uoyama H, Goushi K, Shizu K, Nomura H, Adachi C 2012 Nature 492 234 Google Scholar
[36]	Yuan J, Wang Y, Li L, Wang S, Tang X, Wang H, Li M, Zheng C, Chen R 2020 J. Phys. Chem. C 124 10129 Google Scholar
[37]	Zhang L, Li Y, Shi J, Shi G, Cao S 2013 Mater. Chem. Phys. 142 626 Google Scholar
[38]	Wu J Y, Lai T H, Fang M J, Chen J Y, Kuo M Y, Chiu Y H, Hsieh P Y, Tsao C W, Chang H E, Chang Y P, Wang C Y, Chen C Y, Sone M, Wu W W, Chang T F M, Hsu Y J 2022 ACS Appl. Nano Mater. 5 8404 Google Scholar
[39]	Khan M U, Hassan G, Raza M A, Bae J, Kobayashi N P 2019 J. Mater. Sci.: Mater. Electron. 30 4607 Google Scholar
[40]	Rose A 1955 Phys. Rev. 97 1538 Google Scholar
[41]	Cölle M, Büchel M, De Leeuw D M 2006 Org. Electron. 7 305 Google Scholar
[42]	Jiang X L, Zhao Y G, Chen Y S, Li D, Luo Y X, Zhao D Y, Sun Z, Sun J R, Zhao H W 2013 Appl. Phys. Lett. 102 253507 Google Scholar
[43]	Pan S, Zhu Z, Yu H, Lan W, Wei B, Guo K 2021 J. Mater. Chem. C 9 5643 Google Scholar
[44]	Yamazaki Y, Yamashita K, Tani Y, Aoyama T, Ogawa T 2020 J. Mater. Chem. C 8 14423 Google Scholar
[45]	Barsukov Y, Macdonald J 2005 Impedance Spectroscopy: Theory, Experiment, and Applications (New Jersey: Wiley-Interscience) pp1–528
[46]	Zhou G, Yao Y, Lu Z, Yang X, Han J, Wang G, Rao X, Li P, Liu Q, Song Q 2017 Nanotechnology 28 425202 Google Scholar
[47]	Lai Y C, Ohshimizu K, Lee W Y, Hsu J C, Higashihara T, Ueda M, Chen W C 2011 J. Mater. Chem. 21 14502 Google Scholar
[48]	Chen J C, Liu C L, Sun Y S, Tung S H, Chen W C 2012 Soft Matter 8 526 Google Scholar
[49]	Lian S L, Liu C L, Chen W C 2011 ACS Appl. Mater. Interfaces 3 4504 Google Scholar
[50]	周朋超, 张卫东, 顾嘉陆, 陈卉敏, 胡腾达, 蒲华燕, 兰伟霞, 魏斌 2020 物理学报 69 198801 Google Scholar Zhou P C, Zhang W D, Gu J L, Chen H M, Hu T D, Pu H Y, Lan W X, Wei B 2020 Acta Phys. Sin. 69 198801 Google Scholar
[51]	Meyer E A, Castellano R K, Diederich F 2003 Angew. Chem., Int. Ed. Engl. 42 1210 Google Scholar

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Vol. 72, Issue 4 - 2023-02-20

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