Research progress of novel quantum states and charge-spin interconversion in transition metal oxides

Lao Bin; Zheng Xuan; Li Sheng; Wang Zhi-Ming

doi:10.7498/aps.72.20222219

Abstract

For efficient storage and processing of massive data in the information technology era, spintronic device attracts tremendous attention due to its low power consumption and non-volatile feature. Spin source material, which can efficiently generates spin current, is an important constituent of novel spin-orbit torque device. The efficiency of spin current generation in spin source material directly determines the performances of various spintronic devices. In the past two decades, great progress has been made in exploring high-efficient spin source material systems and understanding the relevant physical mechanisms. A wide variety of materials are explored, ranging from traditional heavy metals and semiconductors to topological insulators and two-dimensional (2D) materials. Recently, the material family of transition metal oxides attracts tremendous attention due to its efficient and highly tunable charge-spin conversion intimately related to its emerging novel quantum states and electronic structure. The mechanism of charge-spin conversion generally has two contributions: the bulk spin Hall effect and the spin-momentum locked interface with inversion symmetry breaking. Novel electronic structures such as topological band structures and spin-momentum locked surface states can realize efficient charge-spin conversion. For example, the Weyl points in SrRuO₃ and the topological Dirac nodal line in SrIrO₃ are predicted to give rise to a large Berry curvature and corresponding spin Hall conductance; the topological surface states can generate spin accumulation due to spin-momentum locking; the Rashba states at the oxide interface such as the 2D electron gas in SrTiO₃ and KTaO₃ can generate spin current by Rashba-Edelstein effect. Furthermore, the entanglement of various degrees of freedom, including spin, charge, lattice and orbit in transition metal oxides lead to the electronic structure being highly tunable by various methods including gate voltage, substrate constraint, thickness, interface engineering, etc. Therefore, charge-spin conversion in transition metal oxides is of great significance for both modulating of novel electronic structure in fundamental research and exploring its promising potential in future spintronic devices. In this review, we focus on introducing aspects of exotic electronic structures, spin transport mechanism, charge-spin interconversion characterization, efficiency and manipulation in transition metal oxides, and giving a prospect on the future development trend.

Keywords:

Authors and contacts

Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Acedemy of Sciences, Ningbo 315201, China

Corresponding author: Wang Zhi-Ming, zhiming.wang@nimte.ac.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant Nos. 2019YFA0307800, 2017YFA0303600) and the National Natural Science Foundation of China (Grant Nos. 12174406, 11874367).

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图 1 新奇电子结构及相关的电荷-自旋互转换机制

Figure 1. Novel electronic structures and associated charge-spin interconversion mechanisms.

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图 2 SrTiO₃表面2DEG的电子结构及自旋-电荷互转换相关表征结果　(a) SrTiO₃表面2DEG费米面的ARPES结果, 与计算结果相吻合(出自文献[34], 已获得授权); (b)基于8能带紧束缚模型计算得到费米面处的自旋分布(左图)及能带交叉处的放大图(右图) (出自文献[34], 已获得授权); (c)计算得到的能带结构展示了能带混合以及Rashba劈裂, 且在能带交叉处有更大的Rashba劈裂 (出自文献[35], 已获得授权); (d) SrTiO₃/Al 2DEG的电荷-自旋转换效率λ_IEE随调控电压V_g的变化 (出自文献[34], 已获得授权); (e) SrTiO₃/LaAlO₃/CoFeB中温度依赖的电荷-自旋转换效率 (出自文献[41], 已获得授权); (f)通过非局域效应测量2DEG中的自旋霍尔效应和逆自旋霍尔效应, 电压调控的Hanle效应可以通过施加外磁场观测 (出自文献[44], 已获得授权)

Figure 2. Electronic structure and charge-spin interconversion in the 2DEG at the surface of SrTiO₃: (a) The Fermi surface of the 2DEG at the surface of SrTiO₃ from APRES measurement, which coincides with the calculated band structure (Reproduced with permission from Ref. [34]); (b) the spin textures of the Fermi surface calculated by the eight-band tight-binding model (left). The figure on the right is the zoom-in near the band crossing area (Reproduced with permission from Ref. [34]); (c) the calculated band structure exhibits band mixing and Rashba splitting, where the Rashba splitting is enhanced at the band crossing (Reproduced with permission from Ref. [35]); (d) charge-spin conversion efficiency λ_IEE of SrTiO₃/Al 2DEG as a function of gate voltage V_g (Reproduced with permission from Ref. [34]); (e) the temperature dependent charge-spin conversion efficiency of SrTiO₃/LaAlO₃/CoFeB (Reproduced with permission from Ref. [41]); (f) the nonlocal measurement of the spin Hall effect and inverse spin Hall effect. The Hanle effect tuned by gating voltage is observed when applying magnetic field (Reproduced with permission from Ref. [44]).

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图 3 SrRuO₃的电子结构、自旋输运及SOT相关表征结果　(a) 基于GGA计算的SrRuO₃能带结构, 考虑了磁性、SOC及库仑相互作用的影响^[51]; (b) SrRuO₃(001)电子结构在费米面附近的能量-动量映射图, 左图为ARPES测量结果, 右图为DFT计算结果(出自文献[52], 已获得授权); (c) 正交相SrRuO₃费米面附近贝里曲率分布的计算结果 (出自文献[52], 已获得授权); (d) 300—60 K范围内SrRuO₃自旋霍尔电导率随温度的变化(插图: 相同温度区间内对应的电导率变化) (出自文献[58], 已获得授权); (e) 不同衬底上SrRuO₃电荷-自旋转换效率随温度的变化 (出自文献[59], 已获得授权); (f) 不同衬底上的正交相(红色方块)和四方相(蓝色菱形) SrRuO₃的电荷-自旋转换效率 (出自文献[60], 已获得授权)

Figure 3. Electronic structures, spin transport properties and SOT associated characterization results of SrRuO₃: (a) Band structure of SrRuO₃ from GGA calculations taking into account the effects of magnetization, SOC and Coulomb interaction^[51]; (b) comparison of energy momentum mappings near the Fermi surface measured by ARPES (left) and calculated by DFT (right) for SrRuO₃(001) (Reproduced with permission from Ref. [52]); (c) calculated Berry curvature distributions near the Fermi surface in orthorhombic SrRuO₃ (Reproduced with permission from Ref. [52]); (d) spin Hall conductivity of SrRuO₃ as a function of temperature ranging from 300 to 60 K (inset: the corresponding electrical conductivity in the same temperature range) (Reproduced with permission from Ref. [58]); (e) charge-spin conversion efficiency of SrRuO₃ grown on various substrates as a function of temeprature (Reproduced with permission from Ref. [59]); (f) comparison of charge-spin conversion efficiency between orthorhombic (red square) and tetragonal (blue diamond) SrRuO₃ grown on various substrates (Reproduced with permission from Ref. [60]).

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图 6 过渡金属氧化物和重金属体系中电荷-自旋转换效率及翻转阈值电流密度的比较

Figure 6. Comparison of charge-spin conversion efficiency and switching threshold current density between transition metal oxides and heavy metals.

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图 4 SrIrO₃的电子结构、自旋输运及SOT相关表征结果　(a) 上: SrIrO₃(001)费米面附近电子结构的ARPES测量结果; 左下: 费米面附近的空穴型能带; 右下: 费米面附近的线性色散电子型能带 (出自文献[66], 已获得授权); (b) SrIrO₃(001)能带结构的ARPES测量和DFT计算的比较^[67]; (c) SrIrO₃体相的自旋霍尔电导σ, 图中x, y, z代表SrIrO₃的伪立方结构的高对称轴^[70]; (d) SrIrO₃费米面上的自旋构型, 这种非平庸的自旋构型来源于SOC, 并能提供自旋-动量锁定 (出自文献[72], 已获得授权); (e) 正交相和四方相SrIrO₃(001)的电荷-自旋转换效率, 上、下方插图分别为正交、四方相晶体结构的侧视图 (出自文献[73], 已获得授权); (f) 50—300 K范围内SrIrO₃(001)/CoTb电荷-自旋转换效率随温度的变化 (出自文献[76], 已获得授权); (g) SrIrO₃/La_0.7Sr_0.3MnO₃和SrIrO₃/Py电荷-自旋转换效率与SrIrO₃厚度的关联性(出自文献[77], 已获得授权)

Figure 4. Electronic structures, spin transport properties and SOT associated characterization results of SrIrO₃. (a) Upper: The electronic structure map near the Fermi surface measured by ARPES; bottom-left: the holelike bands near the Fermi surface; bottom-right: the linearly dispersive electron band near the Fermi surface (Reproduced with permission from Ref. [66]); (b) comparison of the ARPES measurements and DFT calculations in band strucutre of SrIrO₃ (001)^[67]; (c) spin Hall conductivity σ in the SrIrO₃ bulk, here x, y, and z represent the high-symmetry axes of the pseudo-cubic structure of SrIrO₃^[70]; (d) spin textures at SrIrO₃ Fermi surface, this nontrivial spin textures are originated from the SOC and offers the spin-momentum locking (Reproduced with permission from Ref. [72]); (e) charge-spin conversion efficiency of SrIrO₃(001)/Py with orthorhombic and tetragonal structures, the top and bottom schematics illustrate side view of the orthorhombic and tetragonal crystalline structures, respectivity (Reproduced with permission from Ref. [73]); (f) temperature dependence of charge-spin conversion efficiency of SrIrO₃(001)/CoTb ranging from 50 to 300 K (Reproduced with permission from Ref. [76]); (g) charge-spin conversion efficiency as a function of SrIrO₃ thickness for SrIrO₃/ La_0.7Sr_0.3MnO₃ (solid squares) and SrIrO₃/Py (opened triangles) (Reproduced with permission from Ref. [77]).

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图 5 KTaO₃的电子结构、自旋输运及SOT相关表征结果　(a) KTaO₃晶体结构和能带结构示意图, 由t_2g轨道构成的导带在SOC作用下劈裂成HE, LE和SO三个子带(出自文献[86], 已获得授权); (b) KTaO₃(001)表面2DEG的ARPES结果, 测量的能带结构示意图由红线表示(出自文献[87], 已获得授权); (c) KTaO₃(111)表面2DEG的ARPES结果, 左侧为费米面的测量(上)和计算(下)结果, 星型-六角形费米面由d_xy, d_xz, d_yz轨道构成; 右侧为两个高对称方向的费米面测量结果侧视图(出自文献[89], 已获得授权); (d) KTaO₃/EuO界面的热自旋注入与inverse Edelstein效应示意图(上), 及测量的逆 Edelstein电流与EuO厚度的关联性(下) (出自文献[97], 已获得授权); (e) 通过逆 Rashba-Edelstein效应产生的电荷流与所施加dc磁场的关联性, 插图为SP-FMR测量的配置图(出自文献[98], 已获得授权); (f) 双线性磁电阻与电流(左)和磁场(右)的关系(出自文献[98], 已获得授权)

Figure 5. Electronic structures, spin transport properties and SOT associated characterization results of KTaO₃: (a) Schematic crystalline structure and band structure of KTaO₃, the conducting t_2g band consists of complicated HE, LE and SO subbands due to SOC (Reproduced with permission from Ref. [86]); (b) ARPES results of surface 2DEG in KTaO₃(001), the red curves presents schematics of the measured band structure (Reproduced with permission from Ref. [87]); (c) ARPES results of surface 2DEG in KTaO₃(111); leftside: measured (upper) and calculated (bottom) starlike-hexagonal Fermi surface of the 2DEG, which consists of d_xy, d_xz and d_yz orbits; rightside: sideviews of the measured Fermi surface along high symmetry directions (Reproduced with permission from Ref. [89]); (d) schematic for thermal spin injection and inverse Edelstein effect (upper) and EuO thickness dependent inverse Edelstein current (bottom) of the KTaO₃/EuO interface (Reproduced with permission from Ref. [97]); (e) the transverse charge current generated through the inverse Rashba-Edelstein effect as a function of applied dc magnetici field, the inset schematic presents the SP-FMR measurement configuration (Reproduced with permission from Ref. [98]); (f) bilinear magnetoresistence as functions of applied charge current (left) and magnetici field (right) (Reproduced with permission from Ref. [98]).

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