First principles study of electronic and optical properties of S-type heterostructures MoSi<sub>2</sub>N<sub>4</sub>/GeC

Zhao Na-Na; Wang Jia-Min; Yuan Zhi-Hao; Cui Zhen; Ren Cong-Cong

doi:10.7498/aps.72.20230836

Abstract

In this article, the first principles calculation method is used to study the MoSi₂N₄/GeC heterostructures, and calculate its structural, electronic, and optical properties. And the effects of different biaxial strains and vertical electric fields on the band structure and optical absorption characteristics of the heterostructures are also investigated. MoSi₂N₄/GeC heterostructure is an indirect bandgap semiconductor with a bandgap of 1.25 eV, with the built-in electric field direction pointing from the GeC layer to the MoSi₂N₄ layer. In addition, its photogenerated carrier transfer mechanism conforms to the S-type heterostructures mechanism, thus improving the oxidation reduction potential of photocatalytic water decomposition, making it fully meet the requirements of photocatalytic water decomposition with pH = 0–14. Under biaxial strain, the band gap first increases and then decreases with the increase of compressive strain, and the light absorption performance in the ultraviolet region increases with compressive strain increasing. The band gap decreases as tensile strain increases, and the light absorption performance in the visible light region is enhanced in comparison with its counterpart under compressive strain. Under a vertical electric field, the band gap increases with positive electric field increasing, and decreases with negative electric field increasing. In summary, MoSi₂N₄/GeC heterostructures can be used as an efficient photocatalytic material in some fields such as optoelectronic devices and photocatalysis.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China
2.
International Joint Research Center for Intelligent Manufacturing Technology of Composite Materials and Products, Xi’an 710048, China
3.
School of Science, Xi’an University of Technology, Xi’an 710054, China
4.
School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China

Corresponding author: Zhao Na-Na, zhaonasam2007@163.com

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52274395, U20A20235), the Key Research and Development Program of Shaanxi Province, China (Grant No. 2018ZDXM-GY-139), and the China Postdoctoral Science Foundation (Grant No. 2018M633542).

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References

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Cited By

图 1 MoSi₂N₄和GeC单层的俯视图和侧视图　(a) MoSi₂N₄; (b) GeC

Figure 1. Top and side views of MoSi₂N₄ and GeC monolayer: (a) MoSi₂N₄; (b) GeC.

DownLoad: Full-Size Img PowerPoint

图 2 各单层材料的能带结构　(a) MoSi₂N₄; (b) GeC

Figure 2. Band structure of each monolayer material: (a) MoSi₂N₄; (b) GeC.

DownLoad: Full-Size Img PowerPoint

图 3 不同堆垛方式的MoSi₂N₄/GeC vdWs异质结模型

Figure 3. MoSi₂N₄/GeC vdWs heterostructure model with different stacking methods.

DownLoad: Full-Size Img PowerPoint

图 4 MoSi₂N₄/GeC vdWs异质结的电子特性　(a) 能带结构; (b) CBM的局域电荷密度; (c) VBM的局域电荷密度

Figure 4. Electronic properties of MoSi₂N₄/GeC vdWs heterostructure: (a) Band structure; (b) local charge density of CBM; (b) local charge density of VBM.

DownLoad: Full-Size Img PowerPoint

图 5 MoSi₂N₄/GeC vdWs异质结沿Z方向的电子特性　(a) 静电势图 (蓝色虚线表示费米能级); (b) 平均平面电荷密度图 (插图是差分电荷密度图, 红色和黄色分别代表电荷的积累和消耗)

Figure 5. Electronic properties of MoSi₂N₄/GeC vdWs heterostructure along Z direction: (a) Electrostatic potential diagram (Blue dotted line indicates Fermi energy level); (b) average plane charge density diagram (Inset is a differential charge density plot with red and yellow representing charge accumulation and consumption, respectively).

DownLoad: Full-Size Img PowerPoint

图 6 S型MoSi₂N₄/GeC vdWs异质结光生载流子的转移机制

Figure 6. Transfer mechanism of S-type MoSi₂N₄/GeC vdWs heterostructure photogenerated carriers.

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图 7 MoSi₂N₄, GeC和S型MoSi₂N₄/GeC vdWs异质结的光学特性　(a) 光吸收图谱; (b)在不同pH环境下的氧化还原电位

Figure 7. Photocatalytic performance of MoSi₂N₄, GeC and MoSi₂N₄/GeC vdWs heterostructure: (a) Optical absorption spectra; (b) redox potential under different pH environments.

DownLoad: Full-Size Img PowerPoint

图 8 MoSi₂N₄/GeC vdWs异质结在不同双轴应变(a)和垂直电场(b)下的带隙变化

Figure 8. Band gap change of MoSi₂N₄/GeC vdWs heterostructure are applied with different biaxial strains (a) and vertical electric field (b).

DownLoad: Full-Size Img PowerPoint

图 9 不同双轴应变下MoSi₂N₄/GeC vdWs异质结的能带结构　(a) ε = –8%; (b) ε = –6%; (c) ε = –4%; (d) ε = –2%; (e) ε = 2%; (f) ε = 4%; (g) ε = 6%; (h) ε = 8%

Figure 9. Band structures of MoSi₂N₄/GeC vdWs heterostructure under different biaxial strains: (a) ε = –8%; (b) ε = –6%; (c) ε = –4%; (d) ε = –2%; (e) ε = 2%; (f) ε = 4%; (g) ε = 6%; (h) ε = 8%.

DownLoad: Full-Size Img PowerPoint

图 10 不同电场下MoSi₂N₄/GeC vdWs异质结的能带结构　(a) E = –0.4 V/Å; (b) E = –0.3 V/Å; (c) E = –0.2 V/Å; (d) E = –0.1 V/Å; (e) E = 0.1 V/Å; (f) E = 0.2 V/Å; (g) E = 0.3 V/Å; (h) E = 0.4 V/Å

Figure 10. Band structure of MoSi₂N₄/GeC vdWs heterostructures under different field: (a) E = –0.4 V/Å; (b) E = –0.3 V/Å; (c) E = –0.2 V/Å; (d) E = –0.1 V/Å; (e) E = 0.1 V/Å; (f) E = 0.2 V/Å; (g) E = 0.3 V/Å; (h) E = 0.4 V/Å.

DownLoad: Full-Size Img PowerPoint

图 11 MoSi₂N₄/GeC vdWs异质结在不同双轴应变(a)和垂直电场(b)下的光吸收图谱

Figure 11. Optical absorption spectra of MoSi₂N₄/GeC vdWs heterostructure under different biaxial strains (a) and vertical electric fields (b).

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表 1 MoSi₂N₄和GeC的带隙(E_g)、功函数(Φ)、晶格常数(a)以及Ge—C, Mo—N和两种不同Si—N的键长d_g (T₁和T₂分别代表两种不同的Si—N键键长)

Table 1. Band gap (E_g), work function (Φ), lattice constants (a) of MoSi₂N₄ and GeC and Ge—C, Mo—N and two different Si—N bond lengths (d_g) (T₁ and T₂ represent two different Si—N bond lengths, respectively).

E_g/eV Φ/eV a/Å d_g/Å

Ge—C Mo—N T₁ T₂

MoSi₂N₄ 1.80 5.20 2.910 — 2.096 1.747 1.755

GeC 2.07 4.63 3.265 1.883 — — —

DownLoad: CSV

[1]	熊子谦, 张鹏程, 康文斌, 方文玉 2020 物理学报 69 166301 Google Scholar Xiong Z Q, Zhang P C, Kang W B, Fang W Y 2020 Acta Phys. Sin. 69 166301 Google Scholar
[2]	Cai X F, Huang Y W, Hu J Z, Zhu S W, Tian X H, Zhang K, Ji G J, Zhang Y X, Fu Z D, Tan C L 2020 J. Catal. 10 1208 Google Scholar
[3]	Yang K, Huang W Q, Xu L, Luo W K, Yang Y C, Huang G F 2016 Mater. Sci. Semicond. Process. 41 200 Google Scholar
[4]	Sun Z Y, Xu J, Nsajigwa M, Yang W X, Wu X W, Yi Z, Chen S J, Zhang W B 2022 Commun. Theor. Phys. 74 015503 Google Scholar
[5]	Bohayra M, Brahmanandam J, Fazel S, Rabczuk T, Shapeev A V, Zhuang X Y 2021 Nano Energy 82 105716 Google Scholar
[6]	Hong Y L, Liu Z B, Wang L, Zhou T Y, Ma W, Xu C, Feng S, Chen L, Chen M L, Sun M D, Chen X Q, Cheng M H, Ren W C 2020 Science 369 670 Google Scholar
[7]	Cao L M, Zhou G H, Wang Q Q, Ang L K, Ang Y S 2021 Appl. Phys. Lett. 8 013106
[8]	Li Y H, Ho W K, Lü K L, Zhu B C, Li C S 2018 Appl. Surf. Sci. 430 380 Google Scholar
[9]	Zhu Z, Tang X, Wang T, Fan W Q, Liu Z, Li C X, Huo P W, Yan Y S 2018 Appl. Catal. B 241 319
[10]	Li S J, Li Y Y, Shao L X, Wang C D 2021 Chemistry Select 6 181
[11]	Chen H, Li Y, Huang L, Li J B 2015 J. Phys. Chem. C 119 29148 Google Scholar
[12]	King’ori G W, Ouma C N M, Mishra A K, Amolo G O, Makau N W T 2020 RSC Adv. 10 30127 Google Scholar
[13]	Chen Y C, Tang Z Y, Shan H L, Jiang B, Ding Y L, Luo X, Zheng Y 2021 Phys. Rev. B 104 075449 Google Scholar
[14]	Zhang X, Chen A, Zhang Z H, Jiao M G, Zhou Z 2019 Nanoscale Adv. 1 154 Google Scholar
[15]	He Y, Zhang M, Shi J J, Cen Y L, Wu M 2019 J. Phys. Chem. C 123 12781
[16]	Zhang K A, Zhang T N, Cheng G H, Li T X, Wang S X, Wei W, Zhou X H, Yu W W, Sun Y, Wang P, Zhang D, Zeng C G, Wang X J, Hu W D, Fan H J, Shen G Z, Chen X, Duan X F, Chang K, Dai N 2016 ACS Nano 10 3852 Google Scholar
[17]	Jacobs D A, Langenhorst M, Sahli F, Richards B S, Paetzold U W 2019 J. Phys. Chem. Lett. 10 3159 Google Scholar
[18]	He C, Zhang J H, Zhang W X, Li T T 2019 J. Phys. Chem. Lett. 10 3122 Google Scholar
[19]	Fang L, Ni Y, Hu J S, Tong Z F, Ma X G, Lü H, Hou S C 2022 Phys. E 143 115321 Google Scholar
[20]	Liu C Y, Wang Z W, Xiong W Q, Zhong H X, Yuan S J 2022 J. App. Phys. 131 163102 Google Scholar
[21]	罗铖, 龙庆, 程蓓, 朱必成, 王临曦 2023 物理化学学报 39 2212026 Google Scholar Luo C, Long Q, Cheng B, Zhu B C, Wang L X 2023 Acta Phys. Chim. Sin. 39 2212026 Google Scholar
[22]	梅子慧, 王国宏, 严素定, 王娟 2021 物理化学学报 37 2009097 Google Scholar Mei Z H, Wang G H, Yan S J, Wang J 2021 Acta Phys. Chim. Sin. 37 2009097 Google Scholar
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[24]	Ji Y J, Dong H L, Hou T J, Li Y Y 2018 J. Mater. Chem. A 6 2212 Google Scholar
[25]	Fan X P, Jiang J W, Li R, Guo L, Mi W B 2022 Chem. Phys. Lett. 805 139968
[26]	Kresse G, Furthmüller J 1996 Comp. Mat. Sci. 54 11169 Google Scholar
[27]	Kresse G, Joubert D 1999 Phys. Rev. B 59 1758 Google Scholar
[28]	Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865 Google Scholar
[29]	Shi J Y, Ou Y, Max A M, Wang H Y, Li H, Zhang Y, Gu Y S, Zou M Q 2019 Comput. Mater. Sci. 160 301 Google Scholar
[30]	Guo R, Luan L J, Cao M Y, Zhang Y, Wei X, Fan J B, Ni L, Liu C, Yang Y, Liu J, Tian Y, Duan L 2023 Phys. E 149 115628
[31]	Li R X, Tian X L, Zhu S C, Mao Q H, Ding J, Li H D 2022 Phys. E 144 115443
[32]	Yang F, Zhuo Z G, Han J N, Cao X C, Tao Y, Zhang L, Liu W J, Zhu Z Y, Dai Y H 2021 Superlattice. Microst. 156 106935
[33]	赵婷婷, 姚曼, 王旭东 2023 材料研究与应用 17 205 Google Scholar Zhao T T, Yao M, Wang X D 2023 Mater. Res. Appl. 17 205 Google Scholar
[34]	Bader R F W 1991 Chem. Rev. 91 893 Google Scholar
[35]	栾丽君, 何易, 王涛, Liu Z W 2021 物理学报 70 166302 Google Scholar Luan L J, He Y, Wang T, Liu Z W 2021 Acta Phys. Sin. 70 166302 Google Scholar
[36]	Wang J Q, Cheng H, Wei D Q, Li Z H 2022 Chin. J. Cat. 43 2606 Google Scholar
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[40]	Luo J H, Lin Z X, Zhao Y, Jiang S J, Song S Q 2020 Chin. J. Catal. 41 130
[41]	Ye J X, Liu J W, An Y K 2020 Appl. Surf. Sci. 501 144262 Google Scholar
[42]	刘晨曦, 庞国旺, 潘多桥, 史蕾倩, 张丽丽, 雷博程, 赵旭才, 黄以能 2022 物理学报 71 097301 Google Scholar Liu C X, Pang G W, Pan D Q, Shi L Q, Zhang L L, Lei B C, Zhao X C, Huang Y N 2022 Acta Phys. Sin. 71 097301 Google Scholar
[43]	Navarro Yerga Rufino M, Alvarez Galván M Consuelo, del Valle F, Villoria de la Mano José A, Fierro José L G 2009 Chem. Sus. Chem. 2 471 Google Scholar
[44]	Wang Z, Zhang Y, Wei X, Guo T T, Fan J B, Ni L, Weng Y J, Zha Z D, Liu J, Tian Y, Li T, Duan L 2020 Phys. Chem. Chem. Phys. 22 9630 Google Scholar
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Vol. 72, Issue 19 - 2023-10-05

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First principles study of electronic and optical properties of S-type heterostructures MoSi₂N₄/GeC

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Corresponding author: Zhao Na-Na, zhaonasam2007@163.com

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	E_g/eV	Φ/eV	a/Å	d_g/Å
	E_g/eV	Φ/eV	a/Å	Ge—C	Mo—N	T₁	T₂
MoSi₂N₄	1.80	5.20	2.910	—	2.096	1.747	1.755
GeC	2.07	4.63	3.265	1.883	—	—	—

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First principles study of electronic and optical properties of S-type heterostructures MoSi2N4/GeC

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First principles study of electronic and optical properties of S-type heterostructures MoSi₂N₄/GeC