Selective-area-epitaxied PbTe-superconductor hybrid nanowires: A new candidate system to realize topological quantum computing

Yang Shuai; Zhang Hao; He Ke

doi:10.7498/aps.72.20231603

Abstract

Semiconductor-superconductor hybrid nanowire is one of the major platforms for realizing Majorana zero modes (MZMs) and topological quantum computing (TQC), and the III-V InAs and InSb-based nanowires are the most-studied materials in this approach. Despite years of efforts to improve and optimize materials, too many defects and impurities in the nanowire samples remain the central problem hindering the research progress in this direction. In recent years, a new candidate Majorana nanowire system—IV-VI semiconductor PbTe-superconductor hybrid nanowire—has attracted much attention and witnessed rapid research progress. The unique advantages of PbTe-based nanowires, such as the large dielectric constant and the presence of a lattice-matched substrate, give them great potential in solving the bottleneck problem of sample defects and impurities, making them an ideal platform for studying MZMs and TQC. In this paper, we briefly introduce the recent research progress of selective area growth and transport characterization of in-plane PbTe nanowires and PbTe-superconductor hybrid nanowires. We also discuss the advantages and problems of the new candidate Majorana nanowire system as well as the prospect of realizing TQC based on it.

Keywords:

Authors and contacts

1.
State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
2.
Beijing Academy of Quantum Information Sciences, Beijing 100193, China
3.
Frontier Science Center for Quantum Information, Beijing 100084, China
4.
Hefei National Laboratory, Hefei 230088, China

Corresponding author: Zhang Hao, hzquantum@mail.tsinghua.edu.cn ; He Ke, kehe@tsinghua.edu.cn

Funds: Project supported by the Hefei National Laboratory, China and the Innovation Program for Quantum Science and Technology, China (Grant No. 2021ZD0302400).

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References

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Cited By

图 1 (a) PbTe和CdTe的晶格结构示意图; (b) 选区外延生长PbTe-Pb杂化纳米线的制备流程; (c)选区外延生长的不同结构的平面PbTe纳米线; (d) 结合选区外延生长和投影墙生长制备出的PbTe-Pb杂化平面异质结构; (e) PbTe-Pb, PbTe-CdTe, Pb-CdTe覆盖层界面处原子分辨的TEM图像. 除(d)外所有图均来自文献[17]

Figure 1. (a) Crystal structures of PbTe and CdTe; (b) fabrication procedure of PbTe-Pb hybrid nanowires by selective area growth technique; (c) in-plane epitaxial PbTe nanowires of different structures prepared by selective area growth; (d) in-plane PbTe-Pb heterostructures prepared by combining selective area growth and shadow wall growth; (e) atomically resolved TEM images near the interfaces of PbTe-Pb, PbTe-CdTe and Pb-CdTe capping layer. All figures but (d) are cited from Ref. [17].

DownLoad: Full-Size Img PowerPoint

图 2 PbTe纳米线的输运特征　(a) 场效应迁移率^[17]; (b) 反弱局域效应^[17]; (c), (d) AB效应^[21]; (e)—(g) QPC器件中的弹道输运^[25]; (h)—(k) 量子点中的库仑阻塞效应^[22]

Figure 2. Transport properties of PbTe nanowires: (a) Field effect mobility^[17]; (b) weak antilocalization effect^[17]; (c), (d) AB effect^[21]; (e)–(g) ballistic transport in QPC device^[25]; (h)–(k) Coulomb blockade effect in quantum dot^[22].

DownLoad: Full-Size Img PowerPoint

图 3 PbTe-Pb杂化纳米线中的超导近邻效应　(a), (b)约瑟夫森结中的超流^[24]; (c), (d)隧道结中的超导硬能隙^[26]

Figure 3. Superconducting proximity effect in PbTe-Pb hybrid nanowires: (a), (b) Supercurrent in a Josephson junction^[24]; (c), (d) hard gap in a tunneling junction^[26].

DownLoad: Full-Size Img PowerPoint

[1]	Kitaev A Y 2003 Annals Phys. 303 2 Google Scholar
[2]	Fu L, Kane C L 2008 Phys. Rev. Lett. 100 096407 Google Scholar
[3]	Alicea J 2012 Rep. Prog. Phys. 75 076501 Google Scholar
[4]	Cao Z, Chen S M, Zhang G, Liu D E 2023 Sci. China Phys. Mech. 66 267003 Google Scholar
[5]	Vaitiekėnas S, Whiticar A M, Deng M T, et al. 2018 Phys. Rev. Lett. 121 147701 Google Scholar
[6]	Aghaee M et al. (Microsoft Quantum) 2023 Phys. Rev. B 107 245423 Google Scholar
[7]	Mourik V, Zuo K, Frolov S M, Plissard S R, Bakkers E P A M, Kouwenhoven L P 2012 Science 336 1003 Google Scholar
[8]	Krogstrup P, Ziino N L B, Chang W, et al. 2015 Nat. Mater. 14 400 Google Scholar
[9]	Chang W, Albrecht S M, Jespersen T S, Kuemmeth F, Krogstrup P, Nygard J, Marcus C M 2015 Nat. Nanotechnol. 10 232 Google Scholar
[10]	Gul O, Zhang H, Bommer J D S, et al. 2018 Nat. Nanotechnol. 13 192 Google Scholar
[11]	Wang Z Y, Song H D, Pan D, et al. 2022 Phys. Rev. Lett. 129 167702 Google Scholar
[12]	Ahn S, Pan H N, Woods B, Stanescu T D, Das Sarma S 2021 Phys. Rev. Mater. 5 124602 Google Scholar
[13]	Woods B D, Das Sarma S, Stanescu T D 2021 Phys. Rev. Appl. 16 054053 Google Scholar
[14]	Pan H N, Das Sarma S 2020 Phys. Rev. Res. 2 013377 Google Scholar
[15]	Pan D, Song H D, Zhang S, Liu L, Wen L J, Liao D Y, Zhuo R, Wang Z C, Zhang Z T, Yang S, Ying J H, Miao W T, Shang R N, Zhang H, Zhao J H 2022 Chin. Phys. Lett. 39 058101 Google Scholar
[16]	Cao Z, Liu D E, He W X, Liu X, He K, Zhang H 2022 Phys. Rev. B 105 085424 Google Scholar
[17]	Jiang Y Y, Yang S, Li L, et al. 2022 Phys. Rev. Mater. 6 034205 Google Scholar
[18]	Geng Z H, Zhang Z T, Chen F T, et al. 2022 Phys. Rev. B 105 L241112 Google Scholar
[19]	Schellingerhout S G, de Jong E J, Gomanko M, et al. 2022 Mater. Quantum Technol. 2 015001 Google Scholar
[20]	Gomanko M, de Jong E J, Jiang Y F, Schellingerhout S G, Bakkers E P A M, Frolov S M 2022 SciPost Phys. 13 089 Google Scholar
[21]	Jung J, Schellingerhout S G, Ritter M F, ten Kate S C, van der Molen O A H, de Loijer S, Verheijen M A, Riel H, Nichele F, Bakkers E P A M 2022 Adv. Funct. Mater. 32 2208974 Google Scholar
[22]	Ten Kate S C, Ritter M F, Fuhrer A, Jung J, Schellingerhout S G, Bakkers E P A M, Riel H, Nichele F 2022 Nano Lett. 22 7049 Google Scholar
[23]	Song W Y, Wang Y H, Miao W T, Yu Z H, Gao Y C, Li R D, Yang S, Chen F T, Geng Z H, Zhang Z T, Zhang S, Zang Y Y, Cao Z, Liu D E, Shang R N, Feng X, Li L, Xue Q K, He K, Zhang H 2023 Phys. Rev. B 108 045426 Google Scholar
[24]	Zhang Z T, Song W Y, Gao Y C, Wang Y H, Yu Z H, Yang S, Jiang Y Y, Miao W T, Li R D, Chen F T, Geng Z H, Zhang Q H, Meng F Q, Lin T, Gu L, Zhu K J, Zang Y Y, Li L, Shang R N, Feng X, Xue Q K, He K, Zhang H 2023 Phys. Rev. Mater. 7 086201 Google Scholar
[25]	Wang Y H, Chen F T, Song W Y, Geng Z H, Yu Z H, Yang L N, Gao Y C, Li R D, Yang S, Miao W T, Xu W, Wang Z Y, Xia Z Z, Song H D, Feng X, Zang Y Y, Li L, Shang R N, Xue Q K, He K, Zhang H 2023 Nano Lett. published online (DOI: 10.1021/acs.nanolett.3c03604
[26]	Gao Y C, Song W Y, Yang S, Yu Z H, Li R D, Miao W T, Wang Y H, Chen F T, Geng Z H, Yang L N, Xia Z Z, Feng X, Zang Y Y, Li L, Shang R N, Xue Q K, He K, Zhang H 2023 arXiv 2309.01355
[27]	Springholz G 2018 Chapter 11-Molecular Beam Epitaxy of IV–VI Semiconductors: Fundamentals, Low-dimensional Structures, and Device Applications, Molecular Beam Epitaxy (Second Edition) (Elsevier) pp211–276
[28]	Grabecki G, Wróbel J, Zagrajek P, Fronc K, Aleszkiewicz M, Dietl T, Papis E, Kamińska E, Piotrowska A, Springholz G, Bauer G 2006 Physica E 35 332 Google Scholar
[29]	Beznasyuk D V, Martí-Sánchez S, Kang J H, Tanta R, Rajpalke M, Stankevic T, Christensen A W, Spadaro M C, Bergamaschini R, Maka N N, Petersen C E N, Carrad D J, Jespersen T S, Arbiol J, Krogstrup P 2022 Phys. Rev. Mater. 6 034602 Google Scholar
[30]	Aseev P, Wang G Z, Binci L, Singh A, Marti-Sanchez S, Botifoll M, Stek L J, Bordin A, Watson J D, Boekhout F, Abel D, Gamble J, Van Hoogdalem K, Arbiol J, Kouwenhoven L P, de Lange G, Caroff P 2019 Nano Lett. 19 9102 Google Scholar
[31]	Kanne T, Marnauza M, Olsteins D, Carrad D J, Sestoft J E, de Bruijckere J, Zeng L J, Johnson E, Olsson E, Grove-Rasmussen K, Nygard J 2021 Nat. Nanotechnol. 16 776 Google Scholar
[32]	Liu D E 2013 Phys. Rev. Lett. 111 207003 Google Scholar
[33]	Zhang H, Liu D E, Wimmer M, Kouwenhoven L P 2019 Nat. Commun. 10 5128 Google Scholar
[34]	Azab A A, Ward A A, Mahmoud G M, El-Hanafy E M, El-Zahed H, Terra F S 2018 J. Semicond. 39 123006 Google Scholar

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