Atomic and electronic structure of monolayer ferroelectric GeS on Cu(111)

Zhu Meng-Long; Yang Jun; Dong Yu-Lan; Zhou Yuan; Shao Yan; Hou Hai-Liang; Chen Zhi-Hui; He Jun

doi:10.7498/aps.73.20231246

Abstract

Two-dimensional (2D) ferroelectric materials are important materials for both fundamental properties and potential applications. Especially, group Ⅳ monochalcogenide possesses highest thermoelectric performance and intrinsic ferroelectric polarization properties and can sever as a model to explore ferroelectric polarization properties. However, due to the relatively large exfoliation energy, the creation of high-quality and large-size monolayer group Ⅳ monochalcogenide is not so easy, which seriously hinders the integration of these materials into the fast-developing field of 2D materials and their heterostructures. Herein, monolayer GeS is successfully fabricated on Cu(111) substrate by molecular beam epitaxy method, and the lattice structure and the electronic band structure of monolayer GeS are systematically characterized by high-resolution scanning tunneling microscopy, low-energy electron diffraction, in-situ X-ray photoelectron spectroscopy, Raman spectra, and angle-resolved photoelectron spectroscopy, and density functional theory calculations. All atomically resolved STM images reveal that the obtained monolayer GeS has an orthogonal lattice structure, which consists with theoretical prediction. Meanwhile, the distinct moiré pattern formed between monolayer GeS and Cu(111) substrate also confirms the orthogonal lattice structure. In order to examine the chemical composition and valence state of as-prepared monolayer GeS, in-situ XPS is utilized without being exposed to air. The measured spectra of XPS core levels suggest that the valence states of Ge and S elements are identified to be +2 and –2, respectively and the atomic ratio of Ge/S is 1∶1.5, which is extremely close to the stoichiometric ratio of 1∶1 for GeS. To further corroborate the quality and lattice structure of the monolayer GeS film, ex-situ Raman measurements are also performed for monolayer GeS on highly oriented pyrolytic graphene (HOPG) and multilayer graphene substrate. Three well-defined typical characteristic Raman peaks of GeS are observed. Finally, in-situ ARPES measurement are conducted to determine the electronic band structure of monolayer GeS on Cu(111). The results demonstrate that the monolayer GeS has a nearly flat band electronic band structure, consistent with our density functional theory calculation. The realization and investigation of the monolayer GeS extend the scope of 2D ferroelectric materials and make it possible to prepare high quality and large size monolayer group Ⅳ monochalcogenides, which is beneficial to the application of this main group material to the rapidly developing 2D ferroelectric materials and heterojunction research.

Keywords:

Authors and contacts

1.
School of Microelectronics and Physics, Hunan University of Technology and Business, Changsha 410205, China
2.
Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, China
3.
MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China

Corresponding author: Hou Hai-Liang, hhlcj1732@126.com ; Chen Zhi-Hui, czh_nlo@csu.edu.cn ;

Funds: Project supported by the Research Foundation of Education Bureau of Hunan Province, China (Grant No. 22B0658), the Natural Science Foundation of Hunan Province, China (Grant Nos. 2023JJ30199, 2021JJ40704), and the National Natural Science Foundation of China (Grant Nos. 12004440, 62275275).

FullText HTML : translate this paragraph

References

[1]	Khan A I, Keshavarzi A, Datta S 2020 Nat. Electron. 3 588 Google Scholar
[2]	Wang S, Liu L, Gan L, Chen H, Hou X, Ding Y, Ma S, Zhang D W, Zhou P 2021 Nat. Commun. 12 53 Google Scholar
[3]	John R A, Demirağ Y, Shynkarenko Y, Berezovska Y, Ohannessian N, Payvand M, Zeng P, Bodnarchuk M I, Krumeich F, Kara G, Shorubalko I, Nair M V, Cooke G A, Lippert T, Indiveri G, Kovalenko M V 2022 Nat. Commun. 13 2074 Google Scholar
[4]	Wang J, Wang F, Wang Z, Huang W, Yao Y, Wang Y, Yang J, Li N, Yin L, Cheng R, Zhan X, Shan C, He J 2021 Sci. Bull. 66 2288 Google Scholar
[5]	Junquera J, Ghosez P 2003 Nature 422 506 Google Scholar
[6]	Lee D, Lu H, Gu Y, Choi S Y, Li S D, Ryu S, Paudel T R, Song K, Mikheev E, Lee S, Stemmer S, Tenne D A, Oh S H, Tsymbal E Y, Wu X, Chen L Q, Gruverman A, Eom C B 2015 Science 349 1314 Google Scholar
[7]	胡婷, 阚二军 2018 物理学报 67 157701 Google Scholar Hu T, Kan E J 2018 Acta Phys. Sin. 67 157701 Google Scholar
[8]	Yang Q, Xiong W, Zhu L, Gao G, Wu M 2017 J. Am. Chem. Soc. 139 11506 Google Scholar
[9]	Wu M, Dong S, Yao K, Liu J, Zeng X C 2016 Nano Lett. 16 7309 Google Scholar
[10]	Voiry D, Goswami A, Kappera R, et al. 2015 Nat. Chem. 7 45 Google Scholar
[11]	Chang K, Liu J, Lin H, Wang N, Zhao K, Zhang A, Jin F, Zhong Y, Hu X, Duan W, Zhang Q, Fu L, Xue Q K, Chen X, Ji S H 2016 Science 353 274 Google Scholar
[12]	Liu F, You L, Seyler K L, Li X, Yu P, Lin J, Wang X, Zhou J, Wang H, He H, Pantelides S T, Zhou W, Sharma P, Xu X, Ajayan P M, Wang J, Liu Z 2016 Nat. Commun. 7 12357 Google Scholar
[13]	Ding W, Zhu J, Wang Z, Gao Y, Xiao D, Gu Y, Zhang Z, Zhu W 2017 Nat. Commun. 8 14956 Google Scholar
[14]	Bao Y, Song P, Liu Y, Chen Z, Zhu M, Abdelwahab I, Su J, Fu W, Chi X, Yu W, Liu W, Zhao X, Xu Q H, Yang M, Loh K P 2019 Nano Lett. 19 5109 Google Scholar
[15]	Sui F, Jin M, Zhang Y, Qi R, Wu Y N, Huang R, Yue F, Chu J 2023 Nat. Commun. 14 36 Google Scholar
[16]	Yang Q, Wu M, Li J 2018 J. Phys. Chem. Lett. 9 7160 Google Scholar
[17]	Meng P, Wu Y, Bian R, Pan E, Dong B, Zhao X, Chen J, Wu L, Sun Y, Fu Q, Liu Q, Shi D, Zhang Q, Zhang Y W, Liu Z, Liu F 2022 Nat. Commun. 13 7696 Google Scholar
[18]	孟雨欣, 赵漪凡, 李绍春 2021 物理学报 70 148101 Google Scholar Meng Y X, Zhao Y F, Li S C 2021 Acta Phys. Sin. 70 148101 Google Scholar
[19]	叶倩, 沈阳, 袁野, 赵祎峰, 段纯刚 2020 物理学报 69 217710 Google Scholar Ye Q, Shen Y, Yuan Y, Zhao Y F, Duan C G 2020 Acta Phys. Sin. 69 217710 Google Scholar
[20]	Chowdhury T, Taneja C, Vasdev A, Ghosh P, Sheet G, Kumar G V P, Rahman A 2022 Adv. Electron. Mater. 8 2101158 Google Scholar
[21]	Sutter E, Zhang B, Sun M, Sutter P 2019 ACS Nano 13 9352 Google Scholar
[22]	Guan Z, Zhao Y, Wang X, Zhong N, Deng X, Zheng Y, Wang J, Xu D, Ma R, Yue F, Cheng Y, Huang R, Xiang P, Wei Z, Chu J, Duan C 2022 ACS Nano 16 1308 Google Scholar
[23]	Yu H, Gao D, Wang X, Du X, Lin X, Guo W, Zou R, Jin C, Li K, Chen Y 2018 NPG Asia Mater. 10 882 Google Scholar
[24]	Zhu M, Zhong M, Guo X, Wang Y, Chen Z, Huang H, He J, Su C, Loh K P 2021 Adv. Opt. Mater. 9 2101200 Google Scholar
[25]	Sutter P, Komsa H P, Lu H, Gruverman A, Sutter E 2021 Nano Today 37 101082 Google Scholar
[26]	Du R, Wang Y, Cheng M, Wang P, Li H, Feng W, Song L, Shi J, He J 2022 Nat. Commun. 13 6130 Google Scholar
[27]	Higashitarumizu N, Kawamoto H, Lee C J, Lin B H, Chu F H, Yonemori I, Nishimura T, Wakabayashi K, Chang W H, Nagashio K 2020 Nat. Commun. 11 2428 Google Scholar
[28]	Khan H, Mahmood N, Zavabeti A, Elbourne A, Rahman Md A, Zhang B Y, Krishnamurthi V, Atkin P, Ghasemian M B, Yang J, Zheng G, Ravindran A R, Walia S, Wang L, Russo S P, Daeneke T, Li Y, Kalantar-Zadeh K 2020 Nat. Commun. 11 3449 Google Scholar
[29]	Chang K, Küster F, Miller B J, Ji J R, Zhang J L, Sessi P, Barraza-Lopez S, Parkin S S P 2020 Nano Lett. 20 6590 Google Scholar
[30]	Chiu M H, Ji X, Zhang T, Mao N, Luo Y, Shi C, Zheng X, Liu H, Han Y, Wilson W L, Luo Z, Tung V, Kong J 2023 Adv. Electron. Mater. 9 2201031 Google Scholar
[31]	Sarkar A S, Konidakis I, Gagaoudakis E, Maragkakis G M, Psilodimitrakopoulos S, Katerinopoulou D, Sygellou L, Deligeorgis G, Binas V, Oikonomou I M, Komninou P, Kiriakidis G, Kioseoglou G, Stratakis E 2023 Adv. Sci. 10 2201842 Google Scholar
[32]	Zhou B, Gong S J, Jiang K, Xu L, Shang L, Zhang J, Hu Z, Chu J 2020 J. Mater. Chem. C 8 89 Google Scholar
[33]	Yan Y, Deng Q, Li S, Guo T, Li X, Jiang Y, Song X, Huang W, Yang J, Xia C 2021 Nanoscale 13 16122 Google Scholar
[34]	Pan J, Jing S, Chen W, Bian B, Liao B, Wan G 2022 Appl. Phys. A 128 141 Google Scholar
[35]	Sharma D, Kumar R, Pal A, Sakhuja N, Bhat N 2023 ACS Appl. Electron. Mater. 5 3162 Google Scholar
[36]	Xia F, Wang H, Hwang J C M, Neto A H C, Yang L 2019 Nat. Rev. Phys. 1 306 Google Scholar
[37]	Wu S, Chen Y, Wang X, Jiao H, Zhao Q, Huang X, Tai X, Zhou Y, Chen H, Wang X, Huang S, Yan H, Lin T, Shen H, Hu W, Meng X, Chu J, Wang J 2022 Nat. Commun. 13 3198 Google Scholar
[38]	Guan S, Liu C, Lu Y, Yao Y, Yang S A 2018 Phys. Rev. B 97 144104 Google Scholar
[39]	Xu Y, Zhang H, Shao H, Ni G, Li J, Lu H, Zhang R, Peng B, Zhu Y, Zhu H 2017 Phys. Rev. B 96 245421 Google Scholar
[40]	Li Z, Gu Y, He C, Zou X 2022 Phys. Rev. B 106 035426 Google Scholar
[41]	Von Rohr F O, Ji H, Cevallos F A, Gao T, Ong N P, Cava R J 2017 J. Am. Chem. Soc. 139 2771 Google Scholar
[42]	Luo N, Wang C, Jiang Z, Xu Y, Zou X, Duan W 2018 Adv. Funct. Mater. 28 1804581 Google Scholar
[43]	Nguyen L T, Makov G 2022 Cryst. Growth Des. 22 4956 Google Scholar
[44]	Zhang S, Xie M, Li F, Yan Z, Li Y, Kan E, Liu W, Chen Z, Zeng H 2016 Angew. Chem. Int. Ed. 128 1698 Google Scholar
[45]	Jia S, Li H, Gotoh T, Longeaud C, Zhang B, Lü J, Lü S, Zhu M, Song Z, Liu Q, Robertson J, Liu M 2020 Nat. Commun. 11 4636 Google Scholar
[46]	Feng M, Liu S C, Hu L, Wu J, Liu X, Xue D J, Hu J S, Wan L J 2021 J. Am. Chem. Soc. 143 9664 Google Scholar
[47]	Chen H, Keiser C, Du S, Gao H J, Sutter P, Sutter E 2017 Phys. Chem. Chem. Phys. 19 32473 Google Scholar
[48]	Ribeiro H B, Ramos S, Seixas L, De Matos C J S, Pimenta M A 2019 Phys. Rev. B 100 094301 Google Scholar
[49]	Ul Haq B, AlFaify S, Laref A 2019 J. Phys. Chem. C 123 18124 Google Scholar
[50]	Zhou Y, Wu D, Zhu Y, Cho Y, He Q, Yang X, Herrera K, Chu Z, Han Y, Downer M C, Peng H, Lai K 2017 Nano Lett. 17 5508 Google Scholar
[51]	王慧, 徐萌, 郑仁奎 2020 物理学报 69 017301 Google Scholar Wang H, Xu M, Zheng R K 2020 Acta Phys. Sin. 69 017301 Google Scholar

Cited By

图 1 单层GeS原子分辨STM测量　(a) MBE生长腔结构(左)与STM测量和单层GeS晶体结构(右); (b), (c) 单层GeS在Cu(111)衬底表面形成的摩尔条纹及其快速傅里叶变换, 图像大小为14 nm×14 nm; (d) Cu(111)上单层GeS生长顶示意图; (e), (f) 单层GeS原子分辨STM图像及其快速傅里叶变换, 样品偏压1.2 V和隧穿电流0.60 nA, 图像大小为14 nm×14 nm

Figure 1. Atomically resolved STM measurements of monolayer GeS: (a) Schematic of MBE growth chamber (left) and STM set-up and crystal structure of monolayer GeS (right); (b), (c) moiré pattern formed betweem monolayer GeS and Cu(111) substrate and its fast Fourier transform with the image size of 14 nm × 14 nm; (d) schematic of the monolayer GeS grown on Cu(111); (e), (f) atomically resolved STM images of monolayer GeS and its fast Fourier transform with sample bias voltage of 1.2 V and tunneling current of 0.60 nA, and image size of 14 nm × 14 nm.

DownLoad: Full-Size Img PowerPoint

图 2 单层GeS的Ge 3d (a)和S 2p (b)芯能级XPS能谱

Figure 2. XPS spectra of monolayer GeS for (a) Ge 3d and (b) S 2p core levels.

DownLoad: Full-Size Img PowerPoint

图 3 Γ→Χ和Γ→Y高对称方向的能带结构　(a), (b) 单层GeS理论计算能带结构; (c), (d) Cu(111)衬底能带结构; (e), (f)单层GeS/Cu(111)异质结理论计算的能带结构(上)与APRES测量的能带结构(下)

Figure 3. Electronic band structures along Γ→Χ and Γ→Y high symmetry directions: (a), (b) Theoretically calculated electronic band structure of monolayer GeS; (c), (d) elelctronic band structure of Cu(111) substrate; (e), (f) theoretically calculated electronic band structure of monolayer GeS/Cu(111) heterojunction (top) and electronic band structure measured by APRES (bottom).

DownLoad: Full-Size Img PowerPoint

[1]	Khan A I, Keshavarzi A, Datta S 2020 Nat. Electron. 3 588 Google Scholar
[2]	Wang S, Liu L, Gan L, Chen H, Hou X, Ding Y, Ma S, Zhang D W, Zhou P 2021 Nat. Commun. 12 53 Google Scholar
[3]	John R A, Demirağ Y, Shynkarenko Y, Berezovska Y, Ohannessian N, Payvand M, Zeng P, Bodnarchuk M I, Krumeich F, Kara G, Shorubalko I, Nair M V, Cooke G A, Lippert T, Indiveri G, Kovalenko M V 2022 Nat. Commun. 13 2074 Google Scholar
[4]	Wang J, Wang F, Wang Z, Huang W, Yao Y, Wang Y, Yang J, Li N, Yin L, Cheng R, Zhan X, Shan C, He J 2021 Sci. Bull. 66 2288 Google Scholar
[5]	Junquera J, Ghosez P 2003 Nature 422 506 Google Scholar
[6]	Lee D, Lu H, Gu Y, Choi S Y, Li S D, Ryu S, Paudel T R, Song K, Mikheev E, Lee S, Stemmer S, Tenne D A, Oh S H, Tsymbal E Y, Wu X, Chen L Q, Gruverman A, Eom C B 2015 Science 349 1314 Google Scholar
[7]	胡婷, 阚二军 2018 物理学报 67 157701 Google Scholar Hu T, Kan E J 2018 Acta Phys. Sin. 67 157701 Google Scholar
[8]	Yang Q, Xiong W, Zhu L, Gao G, Wu M 2017 J. Am. Chem. Soc. 139 11506 Google Scholar
[9]	Wu M, Dong S, Yao K, Liu J, Zeng X C 2016 Nano Lett. 16 7309 Google Scholar
[10]	Voiry D, Goswami A, Kappera R, et al. 2015 Nat. Chem. 7 45 Google Scholar
[11]	Chang K, Liu J, Lin H, Wang N, Zhao K, Zhang A, Jin F, Zhong Y, Hu X, Duan W, Zhang Q, Fu L, Xue Q K, Chen X, Ji S H 2016 Science 353 274 Google Scholar
[12]	Liu F, You L, Seyler K L, Li X, Yu P, Lin J, Wang X, Zhou J, Wang H, He H, Pantelides S T, Zhou W, Sharma P, Xu X, Ajayan P M, Wang J, Liu Z 2016 Nat. Commun. 7 12357 Google Scholar
[13]	Ding W, Zhu J, Wang Z, Gao Y, Xiao D, Gu Y, Zhang Z, Zhu W 2017 Nat. Commun. 8 14956 Google Scholar
[14]	Bao Y, Song P, Liu Y, Chen Z, Zhu M, Abdelwahab I, Su J, Fu W, Chi X, Yu W, Liu W, Zhao X, Xu Q H, Yang M, Loh K P 2019 Nano Lett. 19 5109 Google Scholar
[15]	Sui F, Jin M, Zhang Y, Qi R, Wu Y N, Huang R, Yue F, Chu J 2023 Nat. Commun. 14 36 Google Scholar
[16]	Yang Q, Wu M, Li J 2018 J. Phys. Chem. Lett. 9 7160 Google Scholar
[17]	Meng P, Wu Y, Bian R, Pan E, Dong B, Zhao X, Chen J, Wu L, Sun Y, Fu Q, Liu Q, Shi D, Zhang Q, Zhang Y W, Liu Z, Liu F 2022 Nat. Commun. 13 7696 Google Scholar
[18]	孟雨欣, 赵漪凡, 李绍春 2021 物理学报 70 148101 Google Scholar Meng Y X, Zhao Y F, Li S C 2021 Acta Phys. Sin. 70 148101 Google Scholar
[19]	叶倩, 沈阳, 袁野, 赵祎峰, 段纯刚 2020 物理学报 69 217710 Google Scholar Ye Q, Shen Y, Yuan Y, Zhao Y F, Duan C G 2020 Acta Phys. Sin. 69 217710 Google Scholar
[20]	Chowdhury T, Taneja C, Vasdev A, Ghosh P, Sheet G, Kumar G V P, Rahman A 2022 Adv. Electron. Mater. 8 2101158 Google Scholar
[21]	Sutter E, Zhang B, Sun M, Sutter P 2019 ACS Nano 13 9352 Google Scholar
[22]	Guan Z, Zhao Y, Wang X, Zhong N, Deng X, Zheng Y, Wang J, Xu D, Ma R, Yue F, Cheng Y, Huang R, Xiang P, Wei Z, Chu J, Duan C 2022 ACS Nano 16 1308 Google Scholar
[23]	Yu H, Gao D, Wang X, Du X, Lin X, Guo W, Zou R, Jin C, Li K, Chen Y 2018 NPG Asia Mater. 10 882 Google Scholar
[24]	Zhu M, Zhong M, Guo X, Wang Y, Chen Z, Huang H, He J, Su C, Loh K P 2021 Adv. Opt. Mater. 9 2101200 Google Scholar
[25]	Sutter P, Komsa H P, Lu H, Gruverman A, Sutter E 2021 Nano Today 37 101082 Google Scholar
[26]	Du R, Wang Y, Cheng M, Wang P, Li H, Feng W, Song L, Shi J, He J 2022 Nat. Commun. 13 6130 Google Scholar
[27]	Higashitarumizu N, Kawamoto H, Lee C J, Lin B H, Chu F H, Yonemori I, Nishimura T, Wakabayashi K, Chang W H, Nagashio K 2020 Nat. Commun. 11 2428 Google Scholar
[28]	Khan H, Mahmood N, Zavabeti A, Elbourne A, Rahman Md A, Zhang B Y, Krishnamurthi V, Atkin P, Ghasemian M B, Yang J, Zheng G, Ravindran A R, Walia S, Wang L, Russo S P, Daeneke T, Li Y, Kalantar-Zadeh K 2020 Nat. Commun. 11 3449 Google Scholar
[29]	Chang K, Küster F, Miller B J, Ji J R, Zhang J L, Sessi P, Barraza-Lopez S, Parkin S S P 2020 Nano Lett. 20 6590 Google Scholar
[30]	Chiu M H, Ji X, Zhang T, Mao N, Luo Y, Shi C, Zheng X, Liu H, Han Y, Wilson W L, Luo Z, Tung V, Kong J 2023 Adv. Electron. Mater. 9 2201031 Google Scholar
[31]	Sarkar A S, Konidakis I, Gagaoudakis E, Maragkakis G M, Psilodimitrakopoulos S, Katerinopoulou D, Sygellou L, Deligeorgis G, Binas V, Oikonomou I M, Komninou P, Kiriakidis G, Kioseoglou G, Stratakis E 2023 Adv. Sci. 10 2201842 Google Scholar
[32]	Zhou B, Gong S J, Jiang K, Xu L, Shang L, Zhang J, Hu Z, Chu J 2020 J. Mater. Chem. C 8 89 Google Scholar
[33]	Yan Y, Deng Q, Li S, Guo T, Li X, Jiang Y, Song X, Huang W, Yang J, Xia C 2021 Nanoscale 13 16122 Google Scholar
[34]	Pan J, Jing S, Chen W, Bian B, Liao B, Wan G 2022 Appl. Phys. A 128 141 Google Scholar
[35]	Sharma D, Kumar R, Pal A, Sakhuja N, Bhat N 2023 ACS Appl. Electron. Mater. 5 3162 Google Scholar
[36]	Xia F, Wang H, Hwang J C M, Neto A H C, Yang L 2019 Nat. Rev. Phys. 1 306 Google Scholar
[37]	Wu S, Chen Y, Wang X, Jiao H, Zhao Q, Huang X, Tai X, Zhou Y, Chen H, Wang X, Huang S, Yan H, Lin T, Shen H, Hu W, Meng X, Chu J, Wang J 2022 Nat. Commun. 13 3198 Google Scholar
[38]	Guan S, Liu C, Lu Y, Yao Y, Yang S A 2018 Phys. Rev. B 97 144104 Google Scholar
[39]	Xu Y, Zhang H, Shao H, Ni G, Li J, Lu H, Zhang R, Peng B, Zhu Y, Zhu H 2017 Phys. Rev. B 96 245421 Google Scholar
[40]	Li Z, Gu Y, He C, Zou X 2022 Phys. Rev. B 106 035426 Google Scholar
[41]	Von Rohr F O, Ji H, Cevallos F A, Gao T, Ong N P, Cava R J 2017 J. Am. Chem. Soc. 139 2771 Google Scholar
[42]	Luo N, Wang C, Jiang Z, Xu Y, Zou X, Duan W 2018 Adv. Funct. Mater. 28 1804581 Google Scholar
[43]	Nguyen L T, Makov G 2022 Cryst. Growth Des. 22 4956 Google Scholar
[44]	Zhang S, Xie M, Li F, Yan Z, Li Y, Kan E, Liu W, Chen Z, Zeng H 2016 Angew. Chem. Int. Ed. 128 1698 Google Scholar
[45]	Jia S, Li H, Gotoh T, Longeaud C, Zhang B, Lü J, Lü S, Zhu M, Song Z, Liu Q, Robertson J, Liu M 2020 Nat. Commun. 11 4636 Google Scholar
[46]	Feng M, Liu S C, Hu L, Wu J, Liu X, Xue D J, Hu J S, Wan L J 2021 J. Am. Chem. Soc. 143 9664 Google Scholar
[47]	Chen H, Keiser C, Du S, Gao H J, Sutter P, Sutter E 2017 Phys. Chem. Chem. Phys. 19 32473 Google Scholar
[48]	Ribeiro H B, Ramos S, Seixas L, De Matos C J S, Pimenta M A 2019 Phys. Rev. B 100 094301 Google Scholar
[49]	Ul Haq B, AlFaify S, Laref A 2019 J. Phys. Chem. C 123 18124 Google Scholar
[50]	Zhou Y, Wu D, Zhu Y, Cho Y, He Q, Yang X, Herrera K, Chu Z, Han Y, Downer M C, Peng H, Lai K 2017 Nano Lett. 17 5508 Google Scholar
[51]	王慧, 徐萌, 郑仁奎 2020 物理学报 69 017301 Google Scholar Wang H, Xu M, Zheng R K 2020 Acta Phys. Sin. 69 017301 Google Scholar

[1]	Tang Hai-Tao, Mi Zhuang, Wang Wen-Yu, Tang Xiang-Qian, Ye Xia, Shan Xin-Yan, Lu Xing-Hua. Low-noise preamplifier for scanning tunneling microscope. Acta Physica Sinica, 2024, 73(13): 130702. doi: 10.7498/aps.73.20240560
[2]	Xu Si-Wei, Wang Xun-Si, Shen Xiang. Structure of Ge_xGa₈S_92–x glasses studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering. Acta Physica Sinica, 2023, 72(1): 017101. doi: 10.7498/aps.72.20221653
[3]	Li Yuan, Deng Han-Bin, Wang Cui-Xiang, Li Shuai-Shuai, Liu Li-Min, Zhu Chang-Jiang, Jia Ke, Sun Ying-Kai, Du Xin, Yu Xin, Guan Tong, Wu Rui, Zhang Shu-Yuan, Shi You-Guo, Mao Han-Qing. Surface and electronic structure of antiferromagnetic axion insulator candidate EuIn₂As₂. Acta Physica Sinica, 2021, 70(18): 186801. doi: 10.7498/aps.70.20210783
[4]	Dai Hao-Guang, Zha Fang-Xing, Chen Ping-Ping. Theoretical explanation of scanning tunneling spectrum of cleaved (110) surface of InGaAs. Acta Physica Sinica, 2021, 70(19): 196801. doi: 10.7498/aps.70.20210419
[5]	Zhang Zhi-Mo, Zhang Wen-Hao, Fu Ying-Shuang. Scanning tunneling microscopy study on two-dimensional topological insulators. Acta Physica Sinica, 2019, 68(22): 226801. doi: 10.7498/aps.68.20191631
[6]	Yang Meng-Sheng, Yi Tai-Min, Zheng Feng-Cheng, Tang Yong-Jian, Zhang Lin, Du Kai, Li Ning, Zhao Li-Ping, Ke Bo, Xing Pi-Feng. Surface oxidation of as-deposit uranium film characterized by X-ray photoelectron spectroscopy. Acta Physica Sinica, 2018, 67(2): 027301. doi: 10.7498/aps.67.20172055
[7]	Gu Qiang-Qiang, Wan Si-Yuan, Yang Huan, Wen Hai-Hu. Studies of scanning tunneling spectroscopy on iron-based superconductors. Acta Physica Sinica, 2018, 67(20): 207401. doi: 10.7498/aps.67.20181818
[8]	Xu Dan, Yin Jun, Sun Hao-Hua, Wang Guan-Yong, Qian Dong, Guan Dan-Dan, Li Yao-Yi, Guo Wan-Lin, Liu Can-Hua, Jia Jin-Feng. Scanning tunneling microscopy study of h-BN thin films grown on Cu foils. Acta Physica Sinica, 2016, 65(11): 116801. doi: 10.7498/aps.65.116801
[9]	Pang Zong-Qiang, Zhang Yue, Rong Zhou, Jiang Bing, Liu Rui-Lan, Tang Chao. Adsorption and dissociation of water on oxygen pre-covered Cu (110) observed with scanning tunneling microscopy. Acta Physica Sinica, 2016, 65(22): 226801. doi: 10.7498/aps.65.226801
[10]	Xu Si-Wei, Wang Li, Shen Xiang. Raman scattering and X-ray photoelectron spectra of GexSb20Se80-x Glasses. Acta Physica Sinica, 2015, 64(22): 223302. doi: 10.7498/aps.64.223302
[11]	Shi Gao-Ming, Zou Zhi-Qiang, Sun Li-Min, Li Wei-Cong, Liu Xiao-Yong. Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates. Acta Physica Sinica, 2012, 61(22): 227301. doi: 10.7498/aps.61.227301
[12]	Yang Jing-Jing, Du Wen-Han. Scanning tunnelling microscope investigation of the TiSi2 nano-islands on Sr/Si(100) surface. Acta Physica Sinica, 2011, 60(3): 037301. doi: 10.7498/aps.60.037301
[13]	Huang Ren-Zhong, Liu Liu, Yang Wen-Jing. STM tip-induced atomic motion on the top of film supported by a metal substrate. Acta Physica Sinica, 2011, 60(11): 116803. doi: 10.7498/aps.60.116803
[14]	Ge Si-Ping, Zhu Xing, Yang Wei-Sheng. The manipulation of Cu subsurface interstitial atoms with scanning tunneling microscope. Acta Physica Sinica, 2005, 54(2): 824-831. doi: 10.7498/aps.54.824
[15]	Chen Yong-Jun, Zhao Ru-Guang, Yang Wei-Sheng. Scanning tunneling microscopy studies of alkane and alkanol adsorbed on graphite. Acta Physica Sinica, 2005, 54(1): 284-290. doi: 10.7498/aps.54.284
[16]	Ou Gu-Ping, Song Zhen, Gui Wen-Ming, Zhang Fu-Jia. Surface analysis of LiBq4/ITO and LiBq4/CuPc/ITO using atomic force microscopy and x-ray photoelectron spectroscopy. Acta Physica Sinica, 2005, 54(12): 5717-5722. doi: 10.7498/aps.54.5717
[17]	Feng Yu-Qing, Zhao Kun, Zhu Tao, Zhan Wen-Shan. Thermal stability of magnetic tunnel junctions investigated by x-ray photoelectron spectroscopy. Acta Physica Sinica, 2005, 54(11): 5372-5376. doi: 10.7498/aps.54.5372
[18]	WANG LEI, TANG JING-CHANG, WANG XUE-SEN. SCANNING TUNNELING MICROSCOPY STUDY OF Si GROWTH ON Si3N4/Si SURFACE. Acta Physica Sinica, 2001, 50(3): 517-522. doi: 10.7498/aps.50.517
[19]	YUAN JIN-SHE, CHEN GUANG-DE, QI MING, LI AI-ZHEN, XU ZHUO. XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE. Acta Physica Sinica, 2001, 50(12): 2429-2433. doi: 10.7498/aps.50.2429
[20]	WANG HAO, ZHAO XUE-YING, YANG WEI-SHENG. ADSORPTION OF ASPARTIC ACID ON Cu(001) STUDIED BY SCANNING TUNNELING MICROSCOPY. Acta Physica Sinica, 2000, 49(7): 1316-1320. doi: 10.7498/aps.49.1316

Catalog

Vol. 73, Issue 1 - 2024-01-05

Metrics

Abstract views: 3169
PDF Downloads: 134
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板