Ultra-wideband thin frequency-selective surface absorber against sheet resistance fluctuation

Wang Dong-Jun; Sun Zi-Han; Zhang Yuan; Tang Li; Yan Li-Ping

doi:10.7498/aps.73.20231365

Abstract

The design of thin frequency selective surface (FSS) absorber based on resistive film that meets the requirements of broadband, polarization independence, incident angle stability, and strong absorption is a challenging task. Fabrication tolerance of resistive film can result in fluctuations in sheet resistance, which negatively affects the absorber performance. To tackle these problems, this work firstly investigates how sheet resistance fluctuations affect the absorbing performance of resistive film FSS absorber. The analysis of simulated surface current density distribution and impedance reveals that the diversity of current paths provides an effective way to mitigate the influence of sheet resistance fluctuation. This is achieved by enabling flexible variation of surface current in response to sheet resistance fluctuations. Consequently, the variation of input impedance of the FSS absorber due to the fluctuation of sheet resistance is suppressed within a small range. Then, a method of extending bandwidth is proposed by employing the complementary variation of FSS impedance with frequency at different layers. By combining this approach with a miniaturization design, a thin and light FSS absorber is developed that exhibits ultra-wide bandwidth, polarization independence and angle stability while mitigating the effects of sheet resistance perturbation. The proposed FSS absorber achieves a 90% absorption bandwidth from 1.50 GHz to 20.50 GHz, covering Ku, X, C, S bands and part of the L and K bands, with a relative bandwidth reaching 173%. The absorber has a thickness of 0.093λ_L for both transverse electric (TE) polarization and transverse magnetic (TM) polarization, yielding a figure of merit (FoM, the ratio of the theoretical minimum thickness to the actual thickness) of 0.95, indicating that the thickness is close to the theoretical limit. The absorber maintains over 90% absorption rate for TM polarization at an incidence angle of up to 70°, and 80% absorption for TE polarization at 45°. Furthermore, the 90% absorbance bandwidth of the absorber remains at 167.0% when the sheet resistance of any FSS layer fluctuates within a range from 12 to 30 Ω/sq. A prototype of the proposed FSS absorber is fabricated and measured, and the experimental results are in good agreement with the simulation results, thus validating the effectiveness of the proposed method.

Keywords:

Authors and contacts

1.
Chengdu Aircraft Industrial (Group) Co. LTD., Chengdu 610073, China
2.
College of Electronics and Information Engineering, Sichuan University, Chengdu 610065, China
3.
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

Corresponding author: Yan Li-Ping, liping_yan@scu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. U22A2015).

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References

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Cited By

图 1 分形FSS吸波体结构　(a) 无方环时和 (b) 有方环时的十字分形FSS单元结构; (c) 吸波体侧视图

Figure 1. Structure of the proposed fractal FSS absorber: The cross-fractal structure (a) without and (b) with square ring; (c) side view of the absorber.

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图 2 分形FSS吸波体的反射系数

Figure 2. The scattering parameters of the fractal FSS absorber.

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图 3 不同方阻时分形FSS吸波体的 (a)反射系数和(b)吸波率

Figure 3. (a) Reflection coefficient and (b) absorption rate of the fractal FSS absorbers with respect to different sheet resistance.

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图 4 分形FSS吸波体的输入阻抗随方阻波动的变化　(a) 等效电阻; (b) 等效电抗

Figure 4. Input impedance of the fractal FSS absorber with respect to fluctuation of sheet resistance: (a) Resistance; (b) reactance.

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图 5 高性能FSS吸波体结构图　(a) 整体结构; (b) FSS I, (c) FSS II 和(d) FSS III的单元结构

Figure 5. Configuration of the proposed FSS absorber: (a) Perspective view; unit cell of (b) FSS I, (c) FSS II and (d) FSS III.

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图 6 FSS 吸波体(a)分层结构示意图及(b)输入电导和(c)输入电纳

Figure 6. The schematic (a) and input conductance (b) and susceptance (c) of the proposed FSS absorber.

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图 7 各层处的输入阻抗　(a) 等效电阻; (b) 等效电抗

Figure 7. Input impedance at each layer: (a) Resistance; (b) reactance.

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图 8 FSS 吸波体散射参数

Figure 8. The scattering parameters of the proposed FSS absorber.

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图 9 FSS 吸波体吸波率随入射角的变化　(a) TE 极化; (b) TM 极化

Figure 9. Absorption rate with respect to incident angles for (a) TE and (b) TM polarizations.

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图 10 (a) FSS Ⅰ, (b) FSS Ⅱ 和 (c) FSS Ⅲ 方阻 R_s1, R_s2, R_s3变化对吸波率的影响（注意: 当一层 FSS 层方阻变化时, 另外两层取原值）

Figure 10. Effects of (a) R_s1, (b) R_s2 and (c) R_s3 on absorption rate of the proposed FSS absorber. Note that when the sheet resistance of one FSS layer changes, the other two layers take their original values

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图 11 (a) FSS Ⅰ 方阻为 5 Ω/sq 和(b) FSS Ⅰ 方阻为 35 Ω/sq 时其他 FSS 层方阻同时变化对吸波率的影响

Figure 11. Effects of simultaneous variation of square resistances of 2nd and 3rd layers on the absorption performance.

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图 12 (a) 加工样件; (b) 实验测试系统

Figure 12. (a) Fabricated prototype; (b) the experimental setup

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图 13 (a) TE 与(b) TM 极化下垂直入射测试结果与仿真结果对比

Figure 13. Comparison of measurement and simulation results of (a) TE and (b) TM polarizations for normal incidence.

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图 14 (a) TE 与(b) TM 极化下不同入射角吸波率测试结果

Figure 14. The measured absorption rate of (a) TE and (b) TM polarizations with respect to incident angles.

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表 1 分形FSS吸波体参数

Table 1. Structural parameters of the fractal FSS absorber.

参量	值/mm	参量	值/mm
l₁	3.90	w₁	0.58
l₂	2.59	w₂	0.58
l₃	1.38	w₃	0.20
P	11.85	t₁	0.175
h	5.00	t₂	0.05

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表 2 不同方阻情况下分形FSS吸波体的表面电流密度分布

Table 2. Surface current density of the fractal FSS absorber for different sheet resistance

频率	方阻
频率	8 Ω/sq	11 Ω/sq	14 Ω/sq	17 Ω/sq	21 Ω/sq
8 GHz
11 GHz
15 GHz

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表 3 FSS吸波体参数

Table 3. Structural parameters of the FSS absorber.

参量	值/mm	参量	值/mm	参量	值/mm
l₁	10.28	w₁	0.20	s₁	0.56
g₁	0.90	r₁	3.30	w_r1	0.38
r₂	2.54	r₃	1.78	l₂	11.78
w₂	0.50	i₂	2.18	s₂	4.74
w_s2	0.54	g₂	1.62	l₃	10.64
w₃	0.22	i₃	2.96	s₃	2.60
w_s3	0.40	g₃	1.06	P	11.90
h₁	6.00	h₂	0.175

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表 4 与其他宽带FSS吸波体的性能对比

Table 4. Comparison between the proposed and other FSS absorbers.

文献	90%带宽/GHz	FBW/%	厚度 (FoM)	FSS层数	角度稳定性
文献	90%带宽/GHz	FBW/%	厚度 (FoM)	FSS层数	TE	TM
[15]	1.07—9.70	160.3	0.93	2	30° (80%)	60° (80%)
[17]	2.24—11.40	134.3	0.075 λ_L	2	45° (80%)	30° (87%)
[22]	2.11—3.89	59.3	0.090 λ_L	3D	50° (90%)	50° (90%)
[25]	5.80—22.20	117.1	0.155 λ_L	1	50° (90%)	40° (90%)
[29]	0.87—9.28	165.8	0.086 λ_L	2	45° (80%)	45° (90%)
[31]	7.0—27.5	118.8	0.096 λ_L	1	45° (80%)	30° (80%)
[32]	2.79—20.62	152.0	0.119 λ_L	2	60° (80%)	60° (80%)
[34]^#	2.0—15.5	154.3	0.113 λ_L	1	—	—
[36]	1.14—14.2	170.2	0.093 λ_L	3	30° (90%)	50° (90%)
[37]	7.5—42.0	139.4	0.02 λ_L	2	50° (> 80%)	50°(> 80%)
[38]^#*	7.8—18.0	79.1	0.065 λ_L	1	—	—
[39]^*	0.76—4.92	146.5	0.031 λ_L	2	—	—
[41]	2.1—37.5	179.0	0.98	4	45° (80%)	60° (90%)-
[51]	3.16—51.6	176.9	0.102 λ_L	4	45° (80%)	45° (88%)
本文设计	1.50—20.50	173.0	0.95或0.093 λ_L	3	45° (80%)	70° (90%)
注: ^# 代表所用介质层为有耗电介质层; ^* 代表介质层为有耗磁介质.

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Vol. 73, Issue 2 - 2024-01-20

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