Improvement of fluorine attack induced word-line leakage in 3D NAND flash memory

Fang Yu-Xuan; Xia Zhi-Liang; Yang Tao; Zhou Wen-Xi; Huo Zong-Liang

doi:10.7498/aps.73.20231557

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Fang Yu-Xuan, Xia Zhi-Liang, Yang Tao, Zhou Wen-Xi, Huo Zong-Liang. Improvement of fluorine attack induced word-line leakage in 3D NAND flash memoryJ. Acta Physica Sinica, 2024, 73(6): 068502. DOI: 10.7498/aps.73.20231557

Citation:

Fang Yu-Xuan, Xia Zhi-Liang, Yang Tao, Zhou Wen-Xi, Huo Zong-Liang. Improvement of fluorine attack induced word-line leakage in 3D NAND flash memoryJ. Acta Physica Sinica, 2024, 73(6): 068502. DOI: 10.7498/aps.73.20231557

Citation:

Fang Yu-Xuan, Xia Zhi-Liang, Yang Tao, Zhou Wen-Xi, Huo Zong-Liang. Improvement of fluorine attack induced word-line leakage in 3D NAND flash memoryJ. Acta Physica Sinica, 2024, 73(6): 068502. DOI: 10.7498/aps.73.20231557