Self-powered dual-mode UV detector based on GaN/(BA)<sub>2</sub>PbI<sub>4</sub> heterojunction

Zhang Sheng-Yuan; Xia Kang-Long; Zhang Mao-Lin; Bian Ang; Liu Zeng; Guo Yu-Feng; Tang Wei-Hua

doi:10.7498/aps.73.20231698

Abstract

As an important part of an intelligent photoelectric system, ultraviolet detector has been widely used in many fields in recent years. The research on self-powered heterojunction photodiode is particularly important. In this work, a dual-mode self-powered GaN/(BA)₂PbI₄ heterojunction ultraviolet photodiode is prepared and discussed. The GaN film is deposited on sapphire by metal-organic chemical vapor deposition, and then the (BA)₂PbI₄ film is spin-coated onto the surface of the GaN film to construct a planar heterojunction detector. The X-ray diffraction, energy-dispersive X-ray spectroscopy mapping and scanning electron microscope measurements are used to determine the quality of GaN and (BA)₂PbI₄ thin films. When the film is illuminated by 365 nm light with a power density of 421 μW/cm² at 5 V bias, the responsiveness (R) and external quantum efficiency (EQE) are 60 mA/W and 20%, respectively. In self-powered mode, the rise time (τ_r) and decay time (τ_d) are 0.12 s and 0.13 s, respectively, illustrating the fast photogeneration process and recombination process for photo-excited electron-hole pairs. And, the R is 1.96×10^–4 mA/W, owing to the development of space charge region across the interface of GaN thin film and (BA)₂PbI₄ thin film. The outcomes of this study unequivocally demonstrate the extensive potential and wide-ranging applicability of self-powered UV photodiodes based on the GaN/(BA)₂PbI₄ heterojunction configuration. Moreover, this research presents a new concept that provides a novel avenue to the ongoing development of intelligent optoelectronic systems.

Keywords:

Authors and contacts

1.
College of Integrated Circuit Science and Engineering (Industry-Education Integration School), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.
School of Science, Jiangsu University of Science and Technology, Zhenjiang 212100, China
3.
Hangzhou Xiaoshan Technician College, Hangzhou 311201, China

Corresponding author: Zhang Mao-Lin, mlzhang@njupt.edu.cn ; Bian Ang, angbian@just.edu.cn ; Liu Zeng, zengliu@njupt.edu.cn ;

Funds: Project supported by the National Key R&D Program of China (Grant No. 2022YFB3605404), the Joint Funds of the National Natural Science Foundation of China (Grant No. U23A20349), the Young Scientist Fund of the National Natural Science Foundation of China (Grant Nos. 62204125, 62304113, 62305135), and the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications, China (Grant Nos. XK1060921115, XK1060921002).

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References

[1]	Zhang S, Wei S, Liu Z, Li T, Li C, Huang X L, Wang C, Xie Z, Al-Hartomy O A, Al-Ghamdi A A, Wageh S, Gao J, Tang Y, Wang H, Wang Q, Zhang H 2022 Mater. Today Phys. 27 100812 Google Scholar
[2]	Xie C, Lu X T, Tong X W, Zhang Z X, Liang F X, Liang L, Luo L B, Wu Y C 2019 Adv. Funct. Mater. 29 1806006 Google Scholar
[3]	Monroy E, Omnès F, Calle F 2003 Semicond. Sci. Technol. 18 R33 Google Scholar
[4]	Zheng W, Huang F, Zheng R, Wu H 2015 Adv. Mater. 27 3921 Google Scholar
[5]	Liu Z, Tang W 2023 J. Phys. D: Appl. Phys. 56 093002
[6]	Su L, Yang W, Cai J, Chen H, Fang X 2017 Small 13 1701687 Google Scholar
[7]	Jiang W Y, Liu Z, Li S, Yan Z Y, Lu C L, Li P G, Guo Y F, Tang W H 2021 IEEE Sens. J. 21 18663 Google Scholar
[8]	Zhao B, Wang F, Chen H, Zheng L, Su L, Zhao D, Fang X 2017 Adv. Funct. Mater. 27 1700264 Google Scholar
[9]	Song W, Chen J, Li Z, Fang X 2021 Adv. Mater. 33 2101059 Google Scholar
[10]	Zuo C, Cai S, Li Z, Fang X 2021 Nanotechnology 33 105202
[11]	Li L, Liu Z, Tang K, Sha S L, Zhang S H, Jiang M M, Zhang M L, Bian A, Guo Y F, Tang W H 2023 IEEE Sens. J. 23 12767 Google Scholar
[12]	Lan Z, Lei Y, Chan W K E, Chen S, Luo D, Zhu F 2020 Sci. Adv. 6 eaaw8065 Google Scholar
[13]	Hu X, Liu H, Wang X, Zhang X, Shan Z, Zheng W, Li H, Wang X, Zhu X, Jiang Y, Zhang Q, Zhuang X, Pan A 2018 Adv. Opt. Mater. 6 1800293 Google Scholar
[14]	Lan Z, Lau Y S, Cai L, Han J, Suen C W, Zhu F 2022 Laser Photonics Rev. 16 2100602 Google Scholar
[15]	Sun W M, Sun B Y, Li S, Ma G L, Gao A, Jiang W Y, Zhang M L, Li P G, Liu Z, Tang W H 2022 Chin. Phys. B 31 024205 Google Scholar
[16]	Ma G, Jiang W, Sun W, Yan Z, Sun B, Li S, Zhang M, Wang X, Gao A, Dai J, Liu Z, Li P, Tang W 2021 Phys. Scr. 96 125823 Google Scholar
[17]	Xu T, Jiang M, Wan P, Liu Y, Kan C, Shi D 2023 J. Mater. Sci. Technol. 138 183 Google Scholar
[18]	Tang K, Jiang M, Yang B, Xu T, Liu Z, Wan P, Kan C, Shi D 2023 Nanoscale 15 2292 Google Scholar
[19]	Li L, Ye S, Qu J, Zhou F, Song J, Shen G 2021 Small 17 2005606 Google Scholar
[20]	Lee J, Baek K, Lee J, Ahn H, Kim Y, Lim H, Kim Y, Woo J, Stranks S D, Lee S K, Sirringhaus H, Kang K, Lee T 2023 Adv. Funct. Mater. 33 2302048 Google Scholar
[21]	Xia J, Gu H, Liang C, Cai Y, Xing G 2022 J. Phys. Chem. Lett. 13 4579 Google Scholar
[22]	Senthil Kumar M, Kumar J 2003 Mater. Chem. Phys. 77 341 Google Scholar
[23]	Cao D H, Stoumpos C C, Farha O K, Hupp J T, Kanatzidis M G 2015 J. Am. Chem. Soc. 137 7843 Google Scholar
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[28]	Mishra M, Gundimeda A, Krishna S, Aggarwal N, Goswami L, Gahtori B, Bhattacharyya B, Husale S, Gupta G 2018 ACS Omega 3 2304 Google Scholar
[29]	Lee C T, Lin T S, Lee H Y 2010 IEEE Photonics Technol. Lett. 22 1117 Google Scholar
[30]	Prakash N, Singh M, Kumar G, Barvat A, Anand K, Pal P, Singh S P, Khanna S P 2016 Appl. Phys. Lett. 109 242102 Google Scholar
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[32]	王顺利, 王亚超, 郭道友, 李超荣, 刘爱萍 2021 物理学报 70 128502 Google Scholar Wang S L, Wang Y C, Guo D Y, Li C R, Liu A P 2021 Acta Phys. Sin. 70 128502 Google Scholar

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图 1 (a) 异质结的SEM图像, 内插图为GaN/(BA)₂PbI₄异质结的XRD图谱; (b) 异质结的EDS元素图; (c) GaN/(BA)₂PbI₄异质结的能谱; (d) (BA)₂PbI₄薄膜的SEM图; (e) GaN薄膜的SEM图

Figure 1. (a) SEM image of heterojunction, inset shows the XRD patterns of GaN/(BA)₂PbI₄ heterojunction; (b) EDS elemental maps of heterojunction; (c) energy spectrum of GaN/(BA)₂PbI₄ heterojunction; (d) SEM image of (BA)₂PbI₄ thin film; (e) SEM image of GaN thin film.

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图 2 (a), (b) (αhν)²与(hν)的拟合函数图; (c) GaN/(BA)₂PbI₄异质结的紫外-可见光响应谱

Figure 2. (a), (b) Plot of (αhν)² as a function of photon energy (hν); (c) the UV-vis response spectrum of the GaN/(BA)₂PbI₄ heterojunction.

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图 3 (a) GaN/(BA)₂PbI₄ 异质结光电探测器示意图; (b) 异质结光电探测器在黑暗中和不同强度的365 nm紫外光照明下的对数坐标I-V特性曲线; (c), (d) 在不同电压下探测器的PDCR和光强度的关系; (e), (f) 在不同电压下响应度(R)和外部量子效率(EQE)与光强度的关系

Figure 3. (a) Schematic diagram of the GaN/(BA)₂PbI₄ heterojunction photodetector; (b) I-V characteristics in a log coordinate of the heterojunction photodetector in the dark and under 365 nm UV light illumination with various intensities; (c), (d) PDCR of the PD replying on the light intensity under various voltages; (e), (f) responsivity (R) and external quantum efficiency (EQE) replying on the light intensity under various voltages.

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图 4 GaN和(BA)₂PbI₄的电流-电压特性曲线.

Figure 4. Current-voltage curves of GaN and (BA)₂PbI₄.

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图 5 在 365 nm紫外光照射下(a)正电压和(b)负电压下的 I-t 曲线, (a)的插图显示了 1 V 下的 I-t 曲线; (c)零偏置时365 nm 光照下的 I-t 曲线, 插图显示了器件在 365 nm 光照射下的瞬态响应, 零偏置时的功率密度为 113 μW/cm²; (d) 零偏置时异质结光电探测器的带状图

Figure 5. The I-t curves at (a) positive voltages and (b) negative voltages under the illuminations of 356 nm UV light, inset of (a) shows the I-t curves at 1 V; (c) the I-t curves under 365 nm light illumination at zero bias, inset shows transient responses of the devices under the 365 nm light illumination with a power density of 113 μW/cm² at zero bias; (d) the band diagram of the heterojunction photodetector at zero bias.

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表 1 基于GaN/(BA)₂PbI₄异质结的光电二极管紫外探测器性能参数比较

Table 1. Parameters comparison of self-powered GaN/(BA)₂PbI₄ heterojunction UV photodiode

Photodetector	Bias voltage/V	Wavelength/nm	R/(mA·W^–1)	Rise/Decay time/s	Ref.
n-ZnO/p-GaN	0	374	1×10^–3	N/A	[27]
GaN nanorods	3	325	26	0.33/0.99	[28]
GaN/ZnO/ZnO	–5	360	90	N/A	[29]
r-GO/GaN	0	350	1.54	0.06/0.267	[30]
ZnO/CdS/GaN	0	300	176	0.35	[31]
GaN/(BA)₂PbI₄	0	365	1.96×10^–4	0.12/0.13	This work
GaN/(BA)₂PbI₄	+5	365	60	N/A	This work

DownLoad: CSV

[1]	Zhang S, Wei S, Liu Z, Li T, Li C, Huang X L, Wang C, Xie Z, Al-Hartomy O A, Al-Ghamdi A A, Wageh S, Gao J, Tang Y, Wang H, Wang Q, Zhang H 2022 Mater. Today Phys. 27 100812 Google Scholar
[2]	Xie C, Lu X T, Tong X W, Zhang Z X, Liang F X, Liang L, Luo L B, Wu Y C 2019 Adv. Funct. Mater. 29 1806006 Google Scholar
[3]	Monroy E, Omnès F, Calle F 2003 Semicond. Sci. Technol. 18 R33 Google Scholar
[4]	Zheng W, Huang F, Zheng R, Wu H 2015 Adv. Mater. 27 3921 Google Scholar
[5]	Liu Z, Tang W 2023 J. Phys. D: Appl. Phys. 56 093002
[6]	Su L, Yang W, Cai J, Chen H, Fang X 2017 Small 13 1701687 Google Scholar
[7]	Jiang W Y, Liu Z, Li S, Yan Z Y, Lu C L, Li P G, Guo Y F, Tang W H 2021 IEEE Sens. J. 21 18663 Google Scholar
[8]	Zhao B, Wang F, Chen H, Zheng L, Su L, Zhao D, Fang X 2017 Adv. Funct. Mater. 27 1700264 Google Scholar
[9]	Song W, Chen J, Li Z, Fang X 2021 Adv. Mater. 33 2101059 Google Scholar
[10]	Zuo C, Cai S, Li Z, Fang X 2021 Nanotechnology 33 105202
[11]	Li L, Liu Z, Tang K, Sha S L, Zhang S H, Jiang M M, Zhang M L, Bian A, Guo Y F, Tang W H 2023 IEEE Sens. J. 23 12767 Google Scholar
[12]	Lan Z, Lei Y, Chan W K E, Chen S, Luo D, Zhu F 2020 Sci. Adv. 6 eaaw8065 Google Scholar
[13]	Hu X, Liu H, Wang X, Zhang X, Shan Z, Zheng W, Li H, Wang X, Zhu X, Jiang Y, Zhang Q, Zhuang X, Pan A 2018 Adv. Opt. Mater. 6 1800293 Google Scholar
[14]	Lan Z, Lau Y S, Cai L, Han J, Suen C W, Zhu F 2022 Laser Photonics Rev. 16 2100602 Google Scholar
[15]	Sun W M, Sun B Y, Li S, Ma G L, Gao A, Jiang W Y, Zhang M L, Li P G, Liu Z, Tang W H 2022 Chin. Phys. B 31 024205 Google Scholar
[16]	Ma G, Jiang W, Sun W, Yan Z, Sun B, Li S, Zhang M, Wang X, Gao A, Dai J, Liu Z, Li P, Tang W 2021 Phys. Scr. 96 125823 Google Scholar
[17]	Xu T, Jiang M, Wan P, Liu Y, Kan C, Shi D 2023 J. Mater. Sci. Technol. 138 183 Google Scholar
[18]	Tang K, Jiang M, Yang B, Xu T, Liu Z, Wan P, Kan C, Shi D 2023 Nanoscale 15 2292 Google Scholar
[19]	Li L, Ye S, Qu J, Zhou F, Song J, Shen G 2021 Small 17 2005606 Google Scholar
[20]	Lee J, Baek K, Lee J, Ahn H, Kim Y, Lim H, Kim Y, Woo J, Stranks S D, Lee S K, Sirringhaus H, Kang K, Lee T 2023 Adv. Funct. Mater. 33 2302048 Google Scholar
[21]	Xia J, Gu H, Liang C, Cai Y, Xing G 2022 J. Phys. Chem. Lett. 13 4579 Google Scholar
[22]	Senthil Kumar M, Kumar J 2003 Mater. Chem. Phys. 77 341 Google Scholar
[23]	Cao D H, Stoumpos C C, Farha O K, Hupp J T, Kanatzidis M G 2015 J. Am. Chem. Soc. 137 7843 Google Scholar
[24]	Lin Y, Bai Y, Fang Y, Chen Z, Yang S, Zheng X, Tang S, Liu Y, Zhao J, Huang J 2018 J. Phys. Chem. Lett. 9 654 Google Scholar
[25]	Xia J, Liang C, Gu H, Mei S, Cai Y, Xing G 2022 ACS Appl. Electron. Mater. 4 1939 Google Scholar
[26]	Liu Z, Du L, Zhang S H, Li L, Xi Z Y, Tang J C, Fang J P, Zhang M L, Yang L L, Li S, Li P G, Guo Y F, Tang W H 2022 IEEE Trans. Electron Devices 69 5595 Google Scholar
[27]	Zhu H, Shan C X, Yao B, Li B H, Zhang J Y, Zhao D X, Shen D Z, Fan X W 2008 J. Phys. Chem. C 112 20546 Google Scholar
[28]	Mishra M, Gundimeda A, Krishna S, Aggarwal N, Goswami L, Gahtori B, Bhattacharyya B, Husale S, Gupta G 2018 ACS Omega 3 2304 Google Scholar
[29]	Lee C T, Lin T S, Lee H Y 2010 IEEE Photonics Technol. Lett. 22 1117 Google Scholar
[30]	Prakash N, Singh M, Kumar G, Barvat A, Anand K, Pal P, Singh S P, Khanna S P 2016 Appl. Phys. Lett. 109 242102 Google Scholar
[31]	Zhou H, Gui P, Yang L, Ye C, Xue M, Mei J, Song Z, Wang H 2017 New J. Chem. 41 4901 Google Scholar
[32]	王顺利, 王亚超, 郭道友, 李超荣, 刘爱萍 2021 物理学报 70 128502 Google Scholar Wang S L, Wang Y C, Guo D Y, Li C R, Liu A P 2021 Acta Phys. Sin. 70 128502 Google Scholar

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Self-powered dual-mode UV detector based on GaN/(BA)₂PbI₄ heterojunction

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Corresponding author: Zhang Mao-Lin, mlzhang@njupt.edu.cn ; Bian Ang, angbian@just.edu.cn ; Liu Zeng, zengliu@njupt.edu.cn ;

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Self-powered dual-mode UV detector based on GaN/(BA)2PbI4 heterojunction

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Corresponding author: Zhang Mao-Lin, mlzhang@njupt.edu.cn ; Bian Ang, angbian@just.edu.cn ; Liu Zeng, zengliu@njupt.edu.cn ;

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Self-powered dual-mode UV detector based on GaN/(BA)₂PbI₄ heterojunction