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In this work, TCAD simulation modeling is carried out for silicon-germanium heterojunction bipolar transistor (SiGe HBT), and an X-band low noise amplifier (LNA) circuit is built based on the SiGe HBT device model to carry out the hybrid simulation of single-particle transient (SET). The rule of SET pulse varying with LET value and incident angle of ions is studied, and the results show that with the increase of incident LET value, the amplitude of SET pulse at the LNA port increases, and the oscillation time is prolonged; with the increase of incident angle of ions, the amplitude of SET pulse at the LNA port first increases and then decreases, and the oscillation time decreases. With the development of the characterization process, the cutoff frequency (fT) and the maximum oscillation frequency (fMAX) of SiGe HBT device with IM structure, are measured considering the use of inverse-mode (IM) common emitter and common-base structures (Cascode) to reduce the sensitivity of the LNAs to single-particle effects. This work calibrates the devices of the TCAD platform as well as the devices of the ADS platform, establishes F-F LNAs as well as I-F LNAs on the ADS, respectively, and verifies the relevant RF performances of the LNA circuits by using the IM-structured SiGe HBTs as the core devices. The SET experiments are performed on the Sentaurus TCAD platform for the F-F LNA circuit and I-F LNA circuit for ions incident on two positions: common base transistor and common emitter transistor, respectively. It is concluded that the LNA with IM structure still shows good RF performance compared with the standard LNA at 130 nm. The transient current duration of the LNA circuit with IM Cascode structure is significantly reduced, and the peak value is reduced by 66% or more, which significantly reduces the sensitivity of the SiGe LNA circuit to SET.
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Keywords:
- silicon-germanium heterojunction bipolar transistor /
- single particle effect /
- inverse mode /
- hybrid simulation
[1] 辛启明, 刘英坤, 贾素梅 2011 半导体技术 36 672
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Xin Q M, Liu Y Q, Jia S M 2011 Semicond. Technol. 36 672
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[2] Meyerson B S 1986 Appl. Phys. Lett. 48 797
Google Scholar
[3] 马良 2019 中国新通信 21 222
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Man L 2019 Chin. New Telecommun. 21 222
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[4] 谢孟贤, 古妮娜 2008 微电子学 38 34
Xie M X, Gu N N 2008 Microelectronics 38 34
[5] Çaışkan C, Kalyoncu I, Yazici M, Gurbuz Y 2018 IEEE Trans. Circuits Syst. Regul. Pap. 66 1419
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[6] 包宽, 周骏, 沈亚 2017 固体电子学研究与进展 37 239
Bao K, Zhou J, Shen Y 2017 Solid State Electron. Res. Prog. 37 239
[7] 李培, 郭红霞, 郭旗, 文林, 崔江维, 王信, 张晋新 2015 物理学报 64 118502
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Li P, Guo H X, Guo Q, Wen L, Cui J W, Wang X, Zhang J X 2015 Acta Phys. Sin. 64 118502
Google Scholar
[8] Appaswamy A 2009 Ph. D. Dissertation (Georgia: Georgia Institute of Technology
[9] Sheng L, Yong-Bin K, Fabrizio L 2011 IEEE Trans. Device Mater. Reliab. 12 68
Google Scholar
[10] Jung S, Lourenco N E, Song I, Oakley M A, England T D, Arora R, Cressler J D 2014 IEEE Trans. Nucl. Sci. 61 3193
Google Scholar
[11] Al Seragi E M, Dash S, Muthuseenu K, Cressler J D, Barnaby H J, Khachatrian A, Buchner S P, McMorrow D, Zeinolabedinzadeh S 2021 IEEE Trans. Nucl. Sci. 69 2154
Google Scholar
[12] Li P, He C H, Guo H X, Zhang J X, Li Y, Wei J 2019 Microelectron. Reliab. 103 113499
Google Scholar
[13] Zhang J X, Guo Q, Guo H X, Lu W, He C H, Wang X, Wen L 2018 Microelectron. Reliab. 84 105
Google Scholar
[14] Jin D Y, Wu L, Zhang W R, Na W C, Yang S M, Jia X X, Yang Y Q 2022 J. Beijing Univ. Technol. 48 1280
Google Scholar
[15] Zhang J X, Guo H X, Pan X Y, Guo Q, Zhang F Q, Feng J, Wang X, Wei Y, Wu X X 2018 Chin. Phys. B 27 108501
Google Scholar
[16] 张晋新, 王信, 郭红霞, 冯娟, 吕玲, 李培, 闫允一, 吴宪祥, 王辉 2022 物理学报 71 058502
Google Scholar
Zhang J X, Wang X, Guo H X, Feng J, Lü L, Li P, Yan Y Y, Wu X X, Wang H 2022 Acta Phys. Sin. 71 058502
Google Scholar
[17] Lourenco N E, Zeinolabedinzadeh S, Ildefonso A, Fleetwood Z E, Coen C T, Song I, Cressler J D 2016 IEEE Trans. Nucl. Sci. 63 273
Google Scholar
[18] Chen W, Pouget V, Barnaby H J, Cressler J D, Niu G, Fouillat P, Lewis D 2003 IEEE Trans. Nucl. Sci. 50 2081
Google Scholar
[19] Zeinolabedinzadeh S, Ying H, Fleetwood Z E, Roche N J H, Khachatrian A, McMorrow D, Cressler J D 2016 IEEE Trans. Nucl. Sci. 64 125
Google Scholar
[20] Lourenco N E, Phillips S D, England T D, Cardoso A S, Fleetwood Z E, Moen K A, Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 4175
Google Scholar
[21] Phillips S D, Moen K A, Lourenco N E, Cressler J D 2012 IEEE Trans. Nucl. Sci. 59 2682
Google Scholar
[22] 李培, 贺朝会, 郭红霞, 张晋新, 魏佳男, 刘默寒 2022 太赫兹科学与电子信息学报 20 523
Google Scholar
Li P, He C H, Guo H X, Zhang J X, Wei J N, Liu M H 2022 J. Terahertz Sci. Electron. Inf. Technol. 20 523
Google Scholar
[23] Najafizadeh L, Phillips S D, Moen K A, Diestelhorst R M, Bellini M, Saha P K, Marshall P W 2009 IEEE Trans. Nucl. Sci. 56 3469
Google Scholar
[24] Ildefonso A, Coen C T, Fleetwood Z E, Tzintzarov G N, Wachter M T, Khachatrian A, Cressler J D 2017 IEEE Trans. Nucl. Sci. 65 239
Google Scholar
[25] Song I, Raghunathan U S, Lourenco N E, Fleetwood Z E, Oakley M A, Jung S, Cressler J D 2016 IEEE Trans. Nucl. Sci. 63 1099
Google Scholar
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图 1 二维器件模型示意图 (a) 二维器件模型图; (b) Ge组分随着纵轴坐标变化示意图
Figure 1. Schematic of two-dimensional (2D) device model: (a) 2D Device model diagram; (b) schematic diagram of the variation of the Ge component with the coordinate of the vertical axis.
图 2 低噪放大器电路图
Figure 2. Low noise amplifier circuit diagram.
图 3 离子入射轨迹仿真图
Figure 3. Simulation of ion incidence trajectory.
图 4 不同LET值的LNA输出端口瞬态电流对比图
Figure 4. Comparison of transient currents at LNA output ports for different LET values.
图 6 不同LET值的重离子入射CB晶体管时, CE的SET电流仿真图
Figure 6. Simulation of SET current of CE when the heavy ions with different LET values incident on CB transistor.
图 5 不同LET值的重离子入射CB晶体管时, CB的SET电流仿真图
Figure 5. Simulation of the SET current of the CB when the heavy ions with different LET values incident on the CB transistor.
图 7 离子入射角度示意图
Figure 7. Schematic diagram of the angle of incidence of ions.
图 8 不同入射角度的LNA输出端口瞬态电流对比图
Figure 8. Comparison of transient currents at the output ports of LNAs with different incidence angles.
图 10 不同角度的重离子入射CB晶体管时, CE的SET电流仿真图
Figure 10. Simulation of the SET current of CE when heavy ions are incident on the CB transistor at different angles.
图 9 不同角度的重离子入射CB晶体管时, CB的SET电流仿真图
Figure 9. Simulation of the SET current of the CB when heavy ions are incident on the CB transistor at different angles.
图 11 IM-SiGe fT与IC之间的关系
Figure 11. Relationship between fT and IC of IM-SiGe.
图 12 IM-SiGe fMAX与IC之间的关系
Figure 12. Relationship between fMAX and IC of IM-SiGe.
图 13 Cascode配置的F-F与I-F结构示意图
Figure 13. Schematic diagram of F-F and I-F structures with Cascode configurations.
图 14 SiGe HBT器件的S参数Smith图 (a) S11 (红色)/S22 (蓝色); (b) S12 (红色)/S21 (蓝色)
Figure 14. Smith chart of S-parameters of SiGe HBT devices: (a) S11 (red)/S22 (blue); (b) S12 (red)/S21 (blue).
图 15 ADS SiGe HBT器件的S参数Smith图 (a) S11 (红色)/S22 (蓝色); (b) S12 (红色)/S21 (蓝色)
Figure 15. S-parameter Smith chart of ADS SiGe HBT device: (a) S11 (red)/S22 (blue); (b) S12 (red)/S21 (blue)
图 16 SiGe HBT器件的S参数扫描图 (a) S11; (b) S22; (c) S21
Figure 16. S-parameter scan of SiGe HBT device: (a) S11; (b) S22; (c) S21.
图 17 SiGe HBT TCAD与ADS器件的S参数对比图(Vce = 1 V, Vbe = 0.5 V) (a) S11; (b) S22; (c) S12/S21
Figure 17. S-parameter comparison of SiGe HBT TCAD and ADS devices biased at 0.5 V (Vce = 1 V, Vbe = 0.5 V): (a) S11; (b) S22; (c) S12/S21.
图 18 传统模式下LNA的S参数图
Figure 18. S-parameter plot of LNA in forward mode.
图 19 中心频率为9.5 GHz的I-F结构以及F-F结构的LNA电路S参数图对比 (a) S11; (b) S12; (c) S21; (d) S22
Figure 19. Comparison of S-parameter plots of LNA circuits with I-F structure and F-F structure at a center frequency of 9.5 GHZ: (a) S11; (b) S12; (c) S21; (d) S22.
图 20 I-F结构以及F-F结构的LNA电路NF对比图
Figure 20. NF comparison of LNA circuits with I-F structure as well as F-F structure.
图 21 F-F LNA以及I-F LNA电路中对CB与CE的晶体管进行重离子入射示意图 (a) 重离子入射CB; (b) 重离子入射CE
Figure 21. Schematic of heavy-ion incidence on the transistors of CB and CE in F-F LNA as well as I-F LNA circuits: (a) Heavy ion incident CB; (b) heavy ion incident CE.
图 22 CB在离子入射条件下F-F和I-F共源共栅配置的SET模拟结果
Figure 22. CB SET simulation results for F-F and I-F common source and common gate configurations under ion incidence conditions.
图 23 CE在离子入射条件下F-F和I-F共源共栅配置的SET模拟结果
Figure 23. CE SET simulation results for F-F and I-F common source and common gate configurations under ion incidence conditions.
表 1 LNA核心参数
Table 1. LNA core parameters.
LNA核心参数 I-F Cascode F-F Cascode f0/GHz 9.5 9.5 S21/dB 20 23 NF/dB 2.9 1.4 P1dB/dBm –18 –22 
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[1] 辛启明, 刘英坤, 贾素梅 2011 半导体技术 36 672
Google Scholar
Xin Q M, Liu Y Q, Jia S M 2011 Semicond. Technol. 36 672
Google Scholar
[2] Meyerson B S 1986 Appl. Phys. Lett. 48 797
Google Scholar
[3] 马良 2019 中国新通信 21 222
Google Scholar
Man L 2019 Chin. New Telecommun. 21 222
Google Scholar
[4] 谢孟贤, 古妮娜 2008 微电子学 38 34
Xie M X, Gu N N 2008 Microelectronics 38 34
[5] Çaışkan C, Kalyoncu I, Yazici M, Gurbuz Y 2018 IEEE Trans. Circuits Syst. Regul. Pap. 66 1419
Google Scholar
[6] 包宽, 周骏, 沈亚 2017 固体电子学研究与进展 37 239
Bao K, Zhou J, Shen Y 2017 Solid State Electron. Res. Prog. 37 239
[7] 李培, 郭红霞, 郭旗, 文林, 崔江维, 王信, 张晋新 2015 物理学报 64 118502
Google Scholar
Li P, Guo H X, Guo Q, Wen L, Cui J W, Wang X, Zhang J X 2015 Acta Phys. Sin. 64 118502
Google Scholar
[8] Appaswamy A 2009 Ph. D. Dissertation (Georgia: Georgia Institute of Technology
[9] Sheng L, Yong-Bin K, Fabrizio L 2011 IEEE Trans. Device Mater. Reliab. 12 68
Google Scholar
[10] Jung S, Lourenco N E, Song I, Oakley M A, England T D, Arora R, Cressler J D 2014 IEEE Trans. Nucl. Sci. 61 3193
Google Scholar
[11] Al Seragi E M, Dash S, Muthuseenu K, Cressler J D, Barnaby H J, Khachatrian A, Buchner S P, McMorrow D, Zeinolabedinzadeh S 2021 IEEE Trans. Nucl. Sci. 69 2154
Google Scholar
[12] Li P, He C H, Guo H X, Zhang J X, Li Y, Wei J 2019 Microelectron. Reliab. 103 113499
Google Scholar
[13] Zhang J X, Guo Q, Guo H X, Lu W, He C H, Wang X, Wen L 2018 Microelectron. Reliab. 84 105
Google Scholar
[14] Jin D Y, Wu L, Zhang W R, Na W C, Yang S M, Jia X X, Yang Y Q 2022 J. Beijing Univ. Technol. 48 1280
Google Scholar
[15] Zhang J X, Guo H X, Pan X Y, Guo Q, Zhang F Q, Feng J, Wang X, Wei Y, Wu X X 2018 Chin. Phys. B 27 108501
Google Scholar
[16] 张晋新, 王信, 郭红霞, 冯娟, 吕玲, 李培, 闫允一, 吴宪祥, 王辉 2022 物理学报 71 058502
Google Scholar
Zhang J X, Wang X, Guo H X, Feng J, Lü L, Li P, Yan Y Y, Wu X X, Wang H 2022 Acta Phys. Sin. 71 058502
Google Scholar
[17] Lourenco N E, Zeinolabedinzadeh S, Ildefonso A, Fleetwood Z E, Coen C T, Song I, Cressler J D 2016 IEEE Trans. Nucl. Sci. 63 273
Google Scholar
[18] Chen W, Pouget V, Barnaby H J, Cressler J D, Niu G, Fouillat P, Lewis D 2003 IEEE Trans. Nucl. Sci. 50 2081
Google Scholar
[19] Zeinolabedinzadeh S, Ying H, Fleetwood Z E, Roche N J H, Khachatrian A, McMorrow D, Cressler J D 2016 IEEE Trans. Nucl. Sci. 64 125
Google Scholar
[20] Lourenco N E, Phillips S D, England T D, Cardoso A S, Fleetwood Z E, Moen K A, Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 4175
Google Scholar
[21] Phillips S D, Moen K A, Lourenco N E, Cressler J D 2012 IEEE Trans. Nucl. Sci. 59 2682
Google Scholar
[22] 李培, 贺朝会, 郭红霞, 张晋新, 魏佳男, 刘默寒 2022 太赫兹科学与电子信息学报 20 523
Google Scholar
Li P, He C H, Guo H X, Zhang J X, Wei J N, Liu M H 2022 J. Terahertz Sci. Electron. Inf. Technol. 20 523
Google Scholar
[23] Najafizadeh L, Phillips S D, Moen K A, Diestelhorst R M, Bellini M, Saha P K, Marshall P W 2009 IEEE Trans. Nucl. Sci. 56 3469
Google Scholar
[24] Ildefonso A, Coen C T, Fleetwood Z E, Tzintzarov G N, Wachter M T, Khachatrian A, Cressler J D 2017 IEEE Trans. Nucl. Sci. 65 239
Google Scholar
[25] Song I, Raghunathan U S, Lourenco N E, Fleetwood Z E, Oakley M A, Jung S, Cressler J D 2016 IEEE Trans. Nucl. Sci. 63 1099
Google Scholar
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