Intrinsic point defects and optoelectronic properties in monolayer Z-Bi<sub>2</sub>O<sub>2</sub>Se

ZHENG Shijiao; YANG Wenyue; YANG Zhi; XU Lichun; FENG Lin; CHEN Bo; XUE Lin

doi:10.7498/aps.74.20241701

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ZHENG Shijiao, YANG Wenyue, YANG Zhi, XU Lichun, FENG Lin, CHEN Bo, XUE Lin. Intrinsic point defects and optoelectronic properties in monolayer Z-Bi2O2SeJ. Acta Physica Sinica, 2025, 74(12): 126301. DOI: 10.7498/aps.74.20241701

Citation:

ZHENG Shijiao, YANG Wenyue, YANG Zhi, XU Lichun, FENG Lin, CHEN Bo, XUE Lin. Intrinsic point defects and optoelectronic properties in monolayer Z-Bi2O2SeJ. Acta Physica Sinica, 2025, 74(12): 126301. DOI: 10.7498/aps.74.20241701

Citation:

ZHENG Shijiao, YANG Wenyue, YANG Zhi, XU Lichun, FENG Lin, CHEN Bo, XUE Lin. Intrinsic point defects and optoelectronic properties in monolayer Z-Bi2O2SeJ. Acta Physica Sinica, 2025, 74(12): 126301. DOI: 10.7498/aps.74.20241701