One-step-annealing-process constructed WSe<sub>2</sub> complementary transistors

CUI Xinyu; SHAN Junjie; SUN Xiaoyu; PAN Chen; SUN Jiameng; YU Wentao; LIANG Shijun; MIAO Feng

doi:10.7498/aps.74.20250648

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CUI Xinyu, SHAN Junjie, SUN Xiaoyu, PAN Chen, SUN Jiameng, YU Wentao, LIANG Shijun, MIAO Feng. One-step-annealing-process constructed WSe2 complementary transistorsJ. Acta Physica Sinica, 2025, 74(17): 178501. DOI: 10.7498/aps.74.20250648

Citation:

CUI Xinyu, SHAN Junjie, SUN Xiaoyu, PAN Chen, SUN Jiameng, YU Wentao, LIANG Shijun, MIAO Feng. One-step-annealing-process constructed WSe2 complementary transistorsJ. Acta Physica Sinica, 2025, 74(17): 178501. DOI: 10.7498/aps.74.20250648

Citation:

CUI Xinyu, SHAN Junjie, SUN Xiaoyu, PAN Chen, SUN Jiameng, YU Wentao, LIANG Shijun, MIAO Feng. One-step-annealing-process constructed WSe2 complementary transistorsJ. Acta Physica Sinica, 2025, 74(17): 178501. DOI: 10.7498/aps.74.20250648