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Under high temperature and pressure conditions, silicon-based devices experience leakage and deformation due to the self-heating effect, rendering them incapable of long-term stable operation. Silicon carbide (SiC), as a representative third-generation semiconductor material, is an ideal choice for high-temperature, high-frequency, and high-power electronic devices. However, the high-temperature performance limitations of 4H-SiC devices stem from the stability of ohmic contact electrodes and metal interconnects. Current lead electrodes suffer from output instability issues, and oxygen ingress at high temperatures can easily cause output failure. Previous studies indicate that the SiC/Ti/TaSi2/Pt multilayer structure exhibits excellent potential for ohmic contacts. Building upon this ohmic contact foundation, this study proposes a batch sputtering-annealing process to fabricate high-temperature-resistant lead electrodes. This involves altering the sequence of annealing and sputtering: first sputtering Ti/TaSi2 onto the SiC substrate and annealing to form the ohmic contact, followed by depositing a Pt protective layer to construct a novel SiC/Ti/TaSi2/Pt electrode structure. Comparative analysis of the two experimental groups was conducted using SEM, AES, XRD, thin-film stress measurement, and semiconductor analyzers. The batch-sputtered and annealed electrode structure exhibited enhanced density and reduced residual stress, with an initial specific contact resistivity of 6.35 × 10-5 Ω·cm2. High-temperature aging tests at 600°C demonstrated superior electrical stability for electrodes formed by sputtering Pt onto Ti/TaSi2 after ohmic contact formation. These electrodes maintained ohmic characteristics even after 20 hours of air aging, whereas conventional cosputtered ohmic contacts transitioned to Schottky contacts. Pt effectively suppressed atomic diffusion and oxidation reactions, resulting in a smooth electrode microstructure without curling. The batch sputtering-annealing process not only significantly enhances the overall performance of SiC ohmic contacts but also provides crucial guidance for the structural design and performance improvement of ohmic contacts using other metal combinations. This approach holds significant reference value for the high-temperature packaging of third-generation semiconductor power devices and the development of electronic systems operating in harsh environments.
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Keywords:
- Silicon carbide /
- sputtering /
- lead electrode /
- ohmic contact
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[1] Wright N G, Horsfall A B 2007 Journal of Physics D: Applied Physics 40 6345
[2] Lin H-F, Xie E-Q, Ma Z-W, Zhang J, Peng A-H, He D-Y 2004 Acta Physica Sinica 53 2780
[3] Chen J-J, Peng S-P, Deng S-L, Zhou W, Fan Z-Q, Zhang X-J 2025 Acta Physica Sinica 74
[4] Anoldo L, Triolo C, Panarello S, Garescì F, Russo S, Messina A A, Calabretta M, Patanè S 2021 IEEE Electron Device Letters 42 1089
[5] Ding C, Liu H, Ngo K D T, Burgos R, Lu G Q 2021 IEEE Transactions on Power Electronics 36 11672
[6] Li G, Xu M, Zou D 2023 Crystals 13 1106
[7] S.M. Sze K K N 2006 Physics of Semiconductor Devices (New York) pp335-339
[8] Shi M(translated by Zhao H M)2002 Semiconductor Device Physics and Processes (2nd Edition) (Suzhou University Press) pp226-227 (in Chinese)
[9] Vivona M, Greco G, Lo Nigro R, Bongiorno C, Roccaforte F 2015 Journal of Applied Physics 118 035705
[10] Evans L J, Okojie R S, Lukco D 2012 Materials Science Forum 717-720 841
[11] T G 2017 M.S. Thesis (Xian: Xidian University) (in Chinese)
[12] Zhang Q, Liu Y, Li H, Wang J, Wang Y, Cheng F, Han H, Zhang P 2024 Sensors 24 7731
[13] Han L, Liang L, Kang Y, Qiu Y 2021 IEEE Transactions on Power Electronics 36 2080
[14] He Y, Lv H, Tang X, Song Q, Zhang Y, Han C, Guo T, He X, Zhang Y, Zhang Y 2019 Journal of Alloys and Compounds 805 999
[15] Liu C, Du J, Rong L, Luo T, Gao K, Yin Y, Xu J 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 23-25 Nov. 2020 p247-250
[16] Okojie R S, Lukco D, Chen Y L, Spry D J 2002 Journal of Applied Physics 91 6553
[17] Wu C, Fang X, Kang Q, Fang Z, Sun H, Zhang D, Zhao L, Tian B, Maeda R, Jiang Z 2023 Journal of Materials Research and Technology 24 2428
[18] Zhang M, Ren X, Chu H, Lv J, Li W, Wang W, Yang Q, Feng P 2020 Corrosion Science 177 108982
[19] Zhu H, Yang T, Zhou Y, Hua S, Yang J 2019 De Gruyter Brill 74 353
[20] Ng K K, Liu R 1990 IEEE Transactions on Electron Devices 37 1535
[21] Berger H H 1972 Journal of The Electrochemical Society 119 507
[22] Wang Y-Y, Zhen C-M, Gong H-X, Yan Z-J, Wang Y-F, Liu X-Q, Yang Y-H, He S-H 2000 Acta Physica Sinica 49 1348
[23] Yu S-Z, Song Y, Dong J-R, Sun Y-R, Zhao Y-M, He Y 2016 Chinese Physics B 25 118101
[24] Scorzoni A, Finetti M 1988 Materials Science Reports 3 79
[25] Zhou S-X, Ai L-K, Qi M, Xu A-H, Yan J-S, Li S-S, Jin Z 2021 Chinese Physics B 30 027304
[26] Qiao X, Xia T, Chen P 2021 Chinese Physics B 30 018104
[27] Sha Y-C, Li Z-W, Jia Z-C, Han B, Ni X-W 2023 Chinese Physics B 32 106104
[28] Huang S, Zhang X 2006 Journal of Micromechanics and Microengineering 16 382
[29] Han L, Du C, Ma Z, Jiang Y, Xiong K, Wang W, Chen H, Deng Z, Jia H 2021 Chinese Physics Letters 38 068102
[30] Santerre F, El Khakani M A, Chaker M, Dodelet J P 1999 Applied Surface Science 148 24
[31] Kwong D L 1984 Thin Solid Films 121 43
[32] Yoon D S, Lee S M, Baik H K 2000 Journal of The Electrochemical Society 147 3477
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