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The multilayer structure of extreme ultraviolet (EUV) masks limits the penetration depth of traditional inspection techniques at non-working wavelengths, thus hindering the effective examination of buried phase defects. Developing defect characterization techniques operating at the 13.5 nm wavelength is crucial for overcoming the quality bottleneck in EUV mask fabrication. Synchrotron radiation light source, with their stable EUV wavelength, cleanliness, and high power density, represents an ideal light source for EUV mask defect characterization research. In this work the current state of technology development for mask characterization at the world's four major synchrotron radiation facilities are systematically reviewed. Through comparative analysis, their working principles, technical advantages, and limitations are investigated in depth, and provide a forward-looking discussion on future trends. In response to the specific requirements for EUV mask defect detection and review, this paper discusses the requirements for the next-generation system platform, which integrates deep detection and review functions, develops novel compact light sources, and innovatively combines the advantages of various imaging techniques to improve the numerical aperture (NA) of imaging systems. This aims to achieve a theoretical resolution of over 20 nm, meeting the future demands of the EUV lithography industry for higher NA (>0.55) and shorter wavelengths (6.7 nm). Regarding the prospects of extending synchrotron radiation to industrial applications, a compact synchrotron radiation source, which can be developed on-site in semiconductor facilities, is introduced to accelerate the research and development cycle, while achieving the synergistic integration of imaging technologies. This paper focuses on the application of phase recovery principle of ptychography to Fourier synthesis illumination (FSI), achieving aberration correction in lens-based systems through synthetic aperture extension. In this paper, the working principles, performance benchmarks, technical challenges, and emerging development trends of existing synchrotron radiation-based EUV mask characterization techniques are investigated. It provides an important reference for designing next-generation EUV mask characterization system platforms.
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Keywords:
- extreme ultraviolet (EUV) mask /
- synchrotron radiation source /
- mask defect inspection and review /
- Fourier synthesis illumination
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图 1 EUV掩模结构及典型缺陷
Figure 1. EUV mask structure and typical defects.
表 1 国际知名同步辐射光源与表征设备对比
Table 1. Comparison of internationally renowned synchrotron radiation sources and characterization equipment.
光源 ALS SLS New
SUBARUSSRF 平台 SHARP RESCAN Micro-
CSMSSRF-
BL09B1A功能 分析 在线检测+
分析分析 在线检测+
分析成像技术 全场
成像叠层衍射
成像相干衍射
成像全场
成像92 eV能量分辨
率(E/ΔE)10–4 4% 1300 1000—8000 光斑直径/μm 30 10 0.23 >25 分辨率/nm 22 34 30 20(设计) 
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