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The multilayer structure of EUV masks limits the penetration depth of traditional inspection techniques at non-working wavelengths, hindering the effective review of buried phase defects. Developing defect characterization techniques operating at the 13.5 nm wavelength is crucial for overcoming the quality bottleneck in EUV mask fabrication. Synchrotron radiation light sources, with their stable EUV wavelength, cleanliness, and high power density, represent an ideal light source for EUV mask defect characterization research. This paper systematically reviews the current state of technology development for mask characterization at the world's four major synchrotron radiation facilities. Through comparative analysis, it delves into their working principles, technical advantages, and limitations, and provides a forward-looking discussion on future trends. For the specific requirements for EUV mask defect inspection and review, the paper discusses the need for next-generation system platforms to deeply integrate inspection and review functionalities, develop novel compact light sources, and innovatively combine the strengths of various imaging techniques to enhance the numerical aperture (NA) of imaging systems. This aims to achieve a theoretical resolution surpassing 20 nm, meeting the future demands of the EUV lithography industry for higher NA (>0.55) and shorter wavelengths (6.7 nm). Regarding the prospects for extending synchrotron radiation to industrial applications, it introduces compact synchrotron sources that enable on-site deployment within semiconductor facilities to accelerate R&D cycles, alongside the synergistic integration of imaging technologies. The paper highlights applying the phase retrieval principle of Ptychography to Fourier Synthesis Illumination (FSI), enabling aberration correction in lens-based systems through synthetic aperture extension. This paper examines the working principles, performance benchmarks, technical challenges, and emerging development trends of existing synchrotron radiation-based EUV mask characterization techniques. It provides a significant reference for designing next-generation EUV mask characterization system platforms.
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Keywords:
- Extreme Ultraviolet (EUV) Mask /
- Synchrotron Radiation Source /
- Mask Defect Inspection and Review /
- Fourier Synthesis Illumination
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