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Two-dimensional ferroelectric α-In2Se3 possess many fascinating physical properties. However, chemical-vapor-deposited ferroelectric α-In2Se3 typically requires high temperatures (> 650 °C). In this work, a KCl/LiCl/NH4Cl ternary catalyst was introduced to synthesize α-In2Se3 at 400-460 °C, giving rise to a 200 °C reduction in growth temperature compared with traditional chemical vapor deposition (CVD) method for ferroelectric α-In2Se3. The surface morphology of the as-prepared materials was controlled by temperature and gas flow rate. As the growth temperature increased from 400 to 460 °C, the synthesized α-In2Se3 was changed from discrete hexagonal flakes to a continuous and uniform thin film, which was confirmed by the scanning electron microscope. Raman spectroscopy showed the characteristic peaks of In2Se3 located at 103, 180, and 195 cm-1, respectively, indicating that the CVD-grown In2Se3 was α-phase. Furthermore, energy dispersive spectrometer and X-ray photoelectron spectroscopy indicated that the elemental composition was close to the ideal stoichiometric ratio, confirming the successful synthesis of the α-In2Se3. Then, the as-prepared α-In2Se3 was transferred onto Si/SiO2 substrate for device fabrication. Atomic force microscope showed that the film was uniform with the thickness of approximately 63 nm. The fabricated two-terminal memristors exhibited analog resistive switching behaviors. And such memristors were used to achieve synaptic functions of long-term potentiation/long-term depression. For artificial neural network simulations based on the synaptic memristors, the recognition accuracy for hand-written digit image exceeded 90%. This work provides a feasible way to low-temperature growth 2D ferroelectric α-In2Se3 for applications in synaptic devices and neuromorphic computing.
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Keywords:
- α-In2Se3 /
- Chemical Vapor Deposition /
- Memristor /
- Synaptic Device
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