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For GaN digital circuits, the p-GaN HEMT is widely adopted as an enhancement-mode device. To convert enhancement-mode devices into depletion-mode ones, conventional approaches to achieve depletion-mode operation rely on high-energy ion etching to selectively remove portions of the p-GaN layer. However, this etching process tends to induce surface lattice damage and elevated interface state density, which can form gate-edge leakage paths. These issues contribute to increased dynamic on-resistance and compromised long-term reliability. Instead, hydrogen ion implantation has been introduced as a non-destructive doping modulation technique to mitigate these challenges. In view of this, this study utilized hydrogen ion implanted technology to achieve the transition of enhancement-mode p-GaN HEMTs to depletion-mode HEMTs. By employing temperature-dependent current-voltage (T-I-V) sweeping, low-frequency noise analysis, and lock-in infrared imaging techniques, the forward current transport, degradation and breakdown behaviors were investigated. The results show that: 1) The gate forward T-I-V curves exhibited a significant power-law relationship in double logarithmic coordinates, the current slope is insensitive to temperature, and the activation energy is derived to be ~ 52 meV. Neither of the classic pn junction theory and the space charge limited current model could explain the current behavior, whereas a defect-mediated electron hopping mechanism was identified as the dominant transport mechanism. 2) A long term of gate bias stress led to the degradation into a typical rectifying behavior, indicating the reformation of p-GaN region at certain region. The forward current has an ideality factor of ~2.6 and a typical 1/f noise spectra, indicating the dominant defect-assisted tunneling current. 3) High gate bias induced a current breakdown. The lock-in infrared imaging and pixel-by-pixel correction techniques were used to obtain the breakdown site and the "hot spots" temperature, respectively.
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Keywords:
- Hydrogen ion implanted /
- GaN HEMT /
- Transport Mechanism /
- Degradation /
- Breakdown
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