-
Tunneling Magnetoresistance (TMR) sensors have emerged as a leading technology in high-performance magnetic sensing, distinguished by their high sensitivity, low power consumption, and miniaturization. To address the evolving demands of cutting-edge applications like biomagnetic imaging and smart grid monitoring, continuous performance enhancement is crucial. This review systematically outlines the key strategies for optimizing TMR sensors, focusing on thin-film material engineering and sensitive microstructure design. Material advancements are dissected along two paths: developing high-sensitivity systems via MgO barriers and composite free layers, and creating wide-linear-range systems through anisotropy engineering, including both perpendicular (PMA) and in-plane (IMA) configurations, as well as dynamic methods like electric-field and strain modulation. Structurally, we highlight innovations such as vortex-state MTJs and magnetic flux concentrators to enhance linearity and sensitivity, alongside advanced noise modulation techniques that effectively suppress low-frequency 1/f noise. The practical impact of these optimizations is evidenced by TMR sensors now capable of measuring magnetocardiograms (MCG) outside shielded environments and providing high-accuracy current sensing in smart grids. Future development is directed towards novel material systems that balance high sensitivity with a wide linear range, the realization of monolithic three-axis vector sensors, and the deep integration of TMR technology with artificial intelligence for smart sensing systems. This work provides a comprehensive reference for advancing TMR sensor technology and its applications in high-precision magnetic field detection.
-
Keywords:
- TMR magnetic sensor /
- performance optimization /
- thin film material /
- MTJ structure design
-
[1] Zheng C, Zhu K, Cardoso De Freitas S, Chang J-Y, Davies J E, Eames P, Freitas P P, Kazakova O, Kim C, Leung C-W, Liou S-H, Ognev A, Piramanayagam S N, Ripka P, Samardak A, Shin K-H, Tong S-Y, Tung M-J, Wang S X, Xue S, Yin X, Pong P W T 2019 IEEE Trans. Magn. 55 1
[2] Yang S, Zhang J 2021 Chemosensors 9 211
[3] Julliere M 1975 Physics Letters A 54 225
[4] Oogane M 2024 IEICE Trans. Electron. E107.C 171
[5] Yan S, Zhou Z, Yang Y, Leng Q, Zhao W 2022 Tsinghua Sci. Technol. 27 443
[6] Leitao D C, Riel F J F V, Rasly M, Araujo P D R, Salvador M, Paz E, Koopmans B 2024 Npj Spintronics 2 54
[7] Fujiwara K, Oogane M, Nishikawa T, Naganuma H, Ando Y 2013 Jpn. J. Appl. Phys. 52 04CM07
[8] Han X F, Zhang Y, Feng J F, Chen C, Deng H, Huang H, Guo J H, Liang Y, Si W R, Jiang A F, Wei H X 2022 Acta Phys. Sin. 71 409 (in Chinese) [韩秀峰, 张雨, 丰家峰, 陈川, 邓辉, 黄辉, 郭经红, 梁云, 司文荣, 江安烽, 魏红祥 2022 物理学报 71 409]
[9] Zhao W S, Zhang B Y, Peng S Z 2023 Spintronic Science and Technology (Beijing: Posts & Telecom Press) p320-324 (in Chinese) [赵巍胜, 张博宇, 彭守仲 2023 自旋电子科学与技术 (北京: 人民邮电出版社) 第320-324页]
[10] Zhong Z Y 2015 Magnetoresistive Sensors (Beijing: Science Press) p32-33 (in Chinese) [钟智勇 2015 磁电阻传感器 (北京: 科学出版社) 第32-33页]
[11] Ye X B 2022 Sensors and Detection Technology (Beijing: China Machine Press) p84-86 (in Chinese) [叶湘滨 2022 传感器与检测技术 (北京:机械工业出版社) 第84-86页]
[12] Nakano T, Fujiwara K, Oogane M 2025 Applied Physics Letters 126 160503
[13] Brown B J, Mitchell L K, Bheemarasetty V S, Cao H M, Kingsnorth J N, Sanes J N, Xiao G 2025 Phys. Rev. Applied 24 034063
[14] Cardoso S, Leitao D C, Gameiro L, Cardoso F, Ferreira R, Paz E, Freitas P P 2014 Microsyst Technol 20 793
[15] Sun Y, Xia Q, Zhang D, Mou Q, Li Y, Xie L, Guang S, Cao Z, Zhu D, Zhao W 2024 AIP Advances 14 015304
[16] Luo J, Xu Z, Jin Z, Wang M, Cai X, Chen J 2024 ACS Appl. Mater. Interfaces 16 31677
[17] Han X, Zhang Y, Wang Y, Huang L, Ma Q, Liu H, Wan C, Feng J, Yin L, Yu G, Yu T, Yan Y 2021 Chinese Phys. Lett. 38 128501
[18] Liu J, Guan M, Gong Y, Ni F, Gao X, Su W, Wang Z, Jiang Z, Hu Z, Liu M 2024 IEEE Electron Device Lett. 45 1289
[19] Yao X P, Pan M C, Ji M H, Hu J F, Zhang Q, Li P S 2023 Transducer and Microsystem Technologies 42 21 (in Chinese) [姚馨平, 潘孟春, 冀敏慧, 胡佳飞, 张琦, 李裴森 2023 传感器与微系统 42 21]
[20] Butler W H, Zhang X-G, Schulthess T C, MacLaren J M 2001 Phys. Rev. B 63 054416
[21] Yuasa S, Nagahama T, Fukushima A, Suzuki Y, Ando K 2004 Nature Mater 3 868
[22] Parkin S S P, Kaiser C, Panchula A, Rice P M, Hughes B, Samant M, Yang S-H 2004 Nature Mater 3 862
[23] Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F, Ohno H 2008 Applied Physics Letters 93 082508
[24] Scheike T, Wen Z, Sukegawa H, Mitani S 2023 Applied Physics Letters 122 112404
[25] Das Sarma S, Adam S, Hwang E H, Rossi E 2011 Rev. Mod. Phys. 83 407
[26] Karpan V M, Khomyakov P A, Starikov A A, Giovannetti G, Zwierzycki M, Talanana M, Brocks G, Van Den Brink J, Kelly P J 2008 Phys. Rev. B 78 195419
[27] Pan M, Li P, Qiu W, Zhao J, Peng J, Hu J, Hu J, Tian W, Hu Y, Chen D, Wu X, Xu Z, Yuan X 2018 Journal of Magnetism and Magnetic Materials 453 101
[28] Thapa A, Sharma B 2025 Adv Materials Technologies 10 e00133
[29] Mi M, Xiao H, Yu L, Zhang Y, Wang Y, Cao Q, Wang Y 2023 Materials Today Nano 24 100408
[30] Fujiwara K, Oogane M, Yokota S, Nishikawa T, Naganuma H, Ando Y 2012 Journal of Applied Physics 111 07C710
[31] Liu F, Zhou H, Yuan L, Cai Y 2023 BMC Nurs 22 483
[32] Yuan Z H, Huang L, Feng J F, Wen Z C, Li D L, Han X F, Nakano T, Yu T, Naganuma H 2015 Journal of Applied Physics 118 053904
[33] Yuan Z H, Feng J F, Guo P, Wan C H, Wei H X, Ali S S, Han X F, Nakano T, Naganuma H, Ando Y 2016 Journal of Magnetism and Magnetic Materials 398 215
[34] Huang L, Yuan Z H, Tao B S, Wan C H, Guo P, Zhang Q T, Yin L, Feng J F, Nakano T, Naganuma H, Liu H F, Yan Y, Han X F 2017 Journal of Applied Physics 122 113903
[35] Fujiwara K, Oogane M, Kanno A, Imada M, Jono J, Terauchi T, Okuno T, Aritomi Y, Morikawa M, Tsuchida M, Nakasato N, Ando Y 2018 Appl. Phys. Express 11 023001
[36] Oogane M, Fujiwara K, Kanno A, Nakano T, Wagatsuma H, Arimoto T, Mizukami S, Kumagai S, Matsuzaki H, Nakasato N, Ando Y 2021 Appl. Phys. Express 14 123002
[37] Matos F, Macedo R, Freitas P P, Cardoso S 2023 AIP Advances 13 025108
[38] Akamatsu S, Oogane M, Tsunoda M, Ando Y 2020 AIP Advances 10 015302
[39] Akamatsu S, Oogane M, Tsunoda M, Ando Y 2022 AIP Advances 12 075021
[40] Roy T, Tsujikawa M, Kanemura T, Shirai M 2020 Journal of Magnetism and Magnetic Materials 498 166092
[41] Tsuchiya T, Roy T, Elphick K, Okabayashi J, Bainsla L, Ichinose T, Suzuki K Z, Tsujikawa M, Shirai M, Hirohata A, Mizukami S 2019 Phys. Rev. Materials 3 084403
[42] Zhao X P, Lu J, Mao S W, Yu Z F, Wang H L, Wang X L, Wei D H, Zhao J H 2017 J. Phys. D: Appl. Phys. 50 285002
[43] Zeng Z M, Khalili Amiri P, Katine J A, Langer J, Wang K L, Jiang H W 2012 Appl. Phys. Lett. 101 062412
[44] Nakano T, Oogane M, Naganuma H, Ando Y 2015 IEEE Trans. Magn. 51 1
[45] Nakano T, Oogane M, Furuichi T, Ando Y 2017 Applied Physics Letters 110 012401
[46] Santos P, Araujo P, Sørensen D, Matos F, Freitas P P, Cardoso S 2023 IEEE Trans. Magn. 59 1
[47] Willing S, Schlage K, Bocklage L, Ramin Moayed M M, Gurieva T, Meier G, Röhlsberger R 2021 ACS Appl. Mater. Interfaces 13 32343
[48] Teixeira B M S, Timopheev A A, Caçoilo N, Cuchet L, Mondaud J, Childress J R, Magalhães S, Alves E, Sobolev N A 2020 J. Phys. D: Appl. Phys. 53 455003
[49] Shao Y, Khalili Amiri P 2023 Adv Materials Technologies 8 2300676
[50] Naik V B, Meng H, Liu R S, Luo P, Yap S, Han G C 2014 Applied Physics Letters 104 232401
[51] Ota S, Ando A, Chiba D 2018 Nat Electron 1 124
[52] Yan S, Zhou Z, Cao Z, Yang Y, Li Z, Chen W, Leng Q, Zhao W 2021 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Chengdu, China p1
[53] Suess D, Bachleitner-Hofmann A, Satz A, Weitensfelder H, Vogler C, Bruckner F, Abert C, Prügl K, Zimmer J, Huber C, Luber S, Raberg W, Schrefl T, Brückl H 2018 Nat Electron 1 362
[54] Weitensfelder H, Brueckl H, Satz A, Pruegl K, Zimmer J, Luber S, Raberg W, Abert C, Bruckner F, Bachleitner-Hofmann A, Windl R, Suess D 2018 Phys. Rev. Applied 10 054056
[55] He G, Zhang Y, Xiao G 2020 Phys. Rev. Applied 14 034051
[56] Liu J, Guan M, Gong Y, Ni F, Gao X, Su W, Wang Z, Jiang Z, Hu Z, Liu M 2024 IEEE Electron Device Lett. 45 1289
[57] Chen J Y, Carroll N, Feng J F, Coey J M D 2012 Applied Physics Letters 101 262402
[58] Zhang X, Pan M, Lei S, Ji M, Hu Y, Hu J, Chen D, Peng J, Qiu W, Li P 2024 Applied Physics Letters 124 052404
[59] Choi J-G, Hwang D-G, Rhee J-R, Lee S-S 2010 Journal of Magnetism and Magnetic Materials 322 2191
[60] Manceau S, Brun T, Fischer J, Ducruet C, Sabon P, Cavoit C, Jannet G, Pinçon J-L, Prejbeanu I L, Kretzschmar M, Baraduc C 2023 Applied Physics Letters 123 082405
[61] Zhang X, Bi Y, Chen G, Liu J, Li J, Feng K, Lv C, Wang W 2018 AIP Advances 8 125222
[62] Feng Y, Chen J-Y, Wu K, Wang J-P 2020 Journal of Magnetism and Magnetic Materials 511 166728
[63] Bi R, Zhang H, Pan S, Liu X, Chen R, Wu S, Hu J 2025 Sensors 25 4739
[64] He G, Zhang Y, Qian L, Xiao G, Zhang Q, Santamarina J C, Patzek T W, Zhang X 2018 Applied Physics Letters 113 242401
[65] Wu Y, Xiao L, Hou S, Gao Z, Han L 2019 IEEE Trans. Appl. Supercond. 29 1
[66] Han S, Wu Y, Wang Y, Chen J 2024 Cryogenics 138 103803
[67] Wu Y, Xiao L Y, Hou S Z 2019 Physics 48 14 (in Chinese) [伍岳, 肖立业, 侯世中 2019 物理 48 14]
[68] Yang L, Sun K, Tao J, Zhang X, Huang D, Pan M, Hu J, Qiu W, Ji M, Hu Y, Li P, Chen D, Zhang Q, Peng J 2022 Sensors and Actuators A: Physical 342 113658
[69] Jiao Q, Jin Z, Zhang C, Chen J 2025 Measurement 242 116143
[70] Edelstein A S, Fischer G A 2002 Journal of Applied Physics 91 7795
[71] Guedes A, Patil S B, Cardoso S, Chu V, Conde J P, Freitas P P 2008 Journal of Applied Physics 103 07E924
[72] Guedes A, Patil S B, Wisniowski P, Chu V, Conde J P, Freitas P P 2008 IEEE Trans. Magn. 44 2554
[73] Hu J, Pan M, Tian W, Chen D, Zhao J, Luo F 2012 Applied Physics Letters 100 244102
[74] Du Q, Peng J, Qiu W, Ding Q, Pan M, Hu J, Sun K, Chen D, Pan L, Che Y, Zhang X, Li P, Zhang B 2019 IEEE Electron Device Lett. 40 1824
[75] Pan L, Pan M, Hu J, Hu Y, Che Y, Yu Y, Wang N, Qiu W, Li P, Peng J, Jiang J 2020 Sensors 20 1440
[76] Pan L, Hu J, Pan M, Che Y, Hu Y, Du Q, Sun K, Yu Y, Zhang Q, Peng J, Qiu W, Li P, Wang J 2021 Journal of Magnetism and Magnetic Materials 517 167393
[77] Kanno A, Nakasato N, Oogane M, Fujiwara K, Nakano T, Arimoto T, Matsuzaki H, Ando Y 2022 Sci Rep 12 6106
[78] Valadeiro J, Cardoso S, Macedo R, Guedes A, Gaspar J, Freitas P 2016 Micromachines 7 88
[79] Zhang J, Pan M, Du Q, Hu J, Sun K, Yu Y, Zhang X, Luo H 2021 Micromachines 12 722
[80] Oogane M, Fujiwara K, Kanno A, Nakano T, Wagatsuma H, Arimoto T, Mizukami S, Kumagai S, Matsuzaki H, Nakasato N, Ando Y 2021 Appl. Phys. Express 14 123002
[81] Fujiwara K, Oogane M, Kanno A, Imada M, Jono J, Terauchi T, Okuno T, Aritomi Y, Morikawa M, Tsuchida M, Nakasato N, Ando Y 2018 Appl. Phys. Express 11 023001
[82] Kurashima K, Kataoka M, Nakano T, Fujiwara K, Kato S, Nakamura T, Yuzawa M, Masuda M, Ichimura K, Okatake S, Moriyasu Y, Sugiyama K, Oogane M, Ando Y, Kumagai S, Matsuzaki H, Mochizuki H 2023 Sensors 23 646
[83] Dey C, Yari P, Wu K 2023 Nano Futures 7 012002
[84] Murzin D, Mapps D J, Levada K, Belyaev V, Omelyanchik A, Panina L, Rodionova V 2020 Sensors 20 1569
[85] Su D, Wu K, Saha R, Peng C, Wang J-P 2019 Micromachines 11 34
[86] An Z, Zhang L, Fan Y, Li Q, Li D 2025 Sensors and Actuators A: Physical 382 116174
[87] Jiao Q, Jin Z, Zhang C, Chen J 2025 Measurement 242 116143
[88] Lu W S, You R, Zhou Y, Yuan H Y, You Z 2020 Chin. J. Sci. Instrum. 41 1 (in Chinese) [鲁文帅, 尤睿, 周扬, 袁宏永, 尤政 2020 仪器仪表学报 41 1]
[89] Ziegler P, Troster N, Schmidt D, Ruthardt J, Fischer M, Roth-Stielow J 2020 2020 22nd European Conference on Power Electronics and Applications (EPE’20 ECCE Europe) Lyon France, September 5-9, 2020 pP.1
[90] Liu J, Lee C-K, Pong P W T 2024 IEEE Trans. Instrum. Meas. 73 1
[91] Muehlenhoff C, Vogler C, Raberg W, Suess D, Albrecht M 2021 IEEE Sensors J. 21 13176
[92] Yang L, Sun K, Pan M, Zhang X, Peng J, Hu Y, Hu J, Qiu W, Li P 2023 IEEE Sensors J. 23 240
[93] Li R, Zhang S, Luo S, Guo Z, Xu Y, Ouyang J, Song M, Zou Q, Xi L, Yang X, Hong J, You L 2021 Nat Electron 4 179
[94] Xu Y, Yang Y, Zhang M, Luo Z, Wu Y 2018 Adv Materials Technologies 3 1800073
[95] Shiogai J, Fujiwara K, Nojima T, Tsukazaki A 2021 Commun Mater 2 102
[96] Camsari K Y, Torunbalci M M, Borders W A, Ohno H, Fukami S 2021 Phys. Rev. Applied 15 044049
[97] Krizakova V, Perumkunnil M, Couet S, Gambardella P, Garello K 2022 Journal of Magnetism and Magnetic Materials 562 169692
[98] Finocchio G, Incorvia J A C, Friedman J S, Yang Q, Giordano A, Grollier J, Yang H, Ciubotaru F, Chumak A V, Naeemi A J, Cotofana S D, Tomasello R, Panagopoulos C, Carpentieri M, Lin P, Pan G, Yang J J, Todri-Sanial A, Boschetto G, Makasheva K, Sangwan V K, Trivedi A R, Hersam M C, Camsari K Y, McMahon P L, Datta S, Koiller B, Aguilar G H, Temporão G P, Rodrigues D R, Sunada S, Everschor-Sitte K, Tatsumura K, Goto H, Puliafito V, Åkerman J, Takesue H, Ventra M D, Pershin Y V, Mukhopadhyay S, Roy K, Ting Wang I-, Kang W, Zhu Y, Kaushik B K, Hasler J, Ganguly S, Ghosh A W, Levy W, Roychowdhury V, Bandyopadhyay S 2024 Nano Futures 8 012001
[99] Shao Q, Wang Z, Zhou Y, Fukami S, Querlioz D, Chua L O 2025 Npj Spintronics 3 16
Metrics
- Abstract views: 28
- PDF Downloads: 3
- Cited By: 0









下载: