Tunneling magnetoresistance and electroresistance in multiferroic tunnel junctions based on bilayer VSi<sub>2</sub>P<sub>4</sub>

ZHANG Haitao; MA Wenxuan; SANG Shengbo; YANG Wei; ZHANG Kun; HAN Jiangchao; GAO Guoying

doi:10.7498/aps.75.20260376

Search

x

中国物理学会期刊

Advanced Search

ZHANG Haitao, MA Wenxuan, SANG Shengbo, YANG Wei, ZHANG Kun, HAN Jiangchao, GAO Guoying. Tunneling magnetoresistance and electroresistance in multiferroic tunnel junctions based on bilayer VSi2P4. Acta Physica Sinica, 2026, 75(15): 150704. DOI: 10.7498/aps.75.20260376

Citation:

ZHANG Haitao, MA Wenxuan, SANG Shengbo, YANG Wei, ZHANG Kun, HAN Jiangchao, GAO Guoying. Tunneling magnetoresistance and electroresistance in multiferroic tunnel junctions based on bilayer VSi2P4. Acta Physica Sinica, 2026, 75(15): 150704. DOI: 10.7498/aps.75.20260376

Citation:

ZHANG Haitao, MA Wenxuan, SANG Shengbo, YANG Wei, ZHANG Kun, HAN Jiangchao, GAO Guoying. Tunneling magnetoresistance and electroresistance in multiferroic tunnel junctions based on bilayer VSi2P4. Acta Physica Sinica, 2026, 75(15): 150704. DOI: 10.7498/aps.75.20260376